this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processin...
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this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processing, metrology, inspection and repair.
this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process aut...
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this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process automation and mask optimization.
the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication pro...
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the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication process;towards systematic CD process control for e-beam lithography;optimized processes and absorber-stack materials for EUV masks;investigation of Cr etch chamber seasoning;metrological characterization of new CD photomask standards;dynamic mask defects in hot embossing lithography and predicting microfluidic response during immersion lithography scanning.
Ion Projection Lithography is one of the major competitors for sub 100nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology hav...
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ISBN:
(纸本)0819436143
Ion Projection Lithography is one of the major competitors for sub 100nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained. the exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to be presented. mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.
this paper will start with an overview of the different defect types which can occur on alternating phase shifting masks. A test mask with programmed defects of these different types was fabricated. the defect printab...
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ISBN:
(纸本)0819436143
this paper will start with an overview of the different defect types which can occur on alternating phase shifting masks. A test mask with programmed defects of these different types was fabricated. the defect printability was investigated using an AIMS system. these results were correlated to first printing results in the wafer-fab. the results give an overview of the requirements for an inspection and repair system for alternating phase shifting masks. In order to get a better understanding of this printability behaviour first simulations of defects using a 3-D mask simulation tool were carried out and compared to the measurements. Several examples of quartz-repairs with different qualities are presented together withthe influence on the aerial image.
We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon...
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ISBN:
(纸本)0819436143
We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon dry etch process than the thermoplastic polymers, but replication into these materials is much more complicated. We observe a high tendency for the polymer to adhere to the stamp. To minimize the sticking problem a fluorocarbon coating of the stamp was tested. It was deposited in a radio frequency plasma reactor with C4F8 as a feed gas. the thickness of the coating was several nm. It was characterised by contact angle measurement, XPS and FTIR analysis. Such coatings could successfully reduce sticking effects during an imprint process.
Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resi...
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ISBN:
(纸本)0819436143
Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.
the embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for ...
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ISBN:
(纸本)0819436143
the embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We at HOYA have attempted to extend the applicability of MoSi-based EAPSM blanks to 193nm lithography, helping extend the life of the existing infrastructure for conventional EAPSM fabrication. We have completed tuning our new MoSi-based film for 193nm lithography and characterized its optical properties, chemical durability, ArF laser exposure durability and mask-making process compatibility.
the EFQM Management Self-Assessment was applied to mask manufacturing and was found to be the driving process for business improvements at the mask shop. It offered an opportunity to learn about the organisation's...
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ISBN:
(纸本)0819431397
the EFQM Management Self-Assessment was applied to mask manufacturing and was found to be the driving process for business improvements at the mask shop. It offered an opportunity to learn about the organisation's strengths and especially the areas where improvement was necessary.
the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demand...
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ISBN:
(纸本)0819436143
the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. the material for the mask substrates, for example, is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material. At 157 nm synthetic fused silica shows only very low transmittance. For this reason alternative materials were discussed, i.e. CaF2, MgF2 and Al2O3 But all these materials have their own drawbacks, i.e. MgF2 shows birefringence, CaF2 and MgF2 have a large thermal expansion and Al2O3 has only low transmittance due to a high impurity level. On the other hand recent developments of modified fused silica demonstrate that high transmittance values can be achieved (i.e. 80% for 1 cm path length). this, together with its excellent mechanical and thermal properties, makes fused silica the material of choice for 157 nm masks.
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