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19th european conference on mask technology for integrated circuits and microcomponents

作者： Mackay, RS Eynon, BG Mathur, DP Photron Inc Austin TX 78728 USA

ISBN: (纸本)0819450189

the future of mask industry technology is in flux. While the requirements for current and near-term lithographic capability is well understood, advanced lithography options pose a completely new set of challenges to the mask maker. Challenges are not only process and materials related, but also include more fundamental concerns dealing with how to afford the necessary capability development. this paper identifies the issues and attempts to propose solutions to the industry's growing concerns.

关键词： Photomasks Manufacturing Lithography Extreme ultraviolet lithography Glasses mask making Pellicles Inspection Optical lithography Semiconducting wafers

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Modified fused silica for 157 nm mask substrates

Modified fused silica for 157 nm mask substrates

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany

ISBN: (纸本)0819436143

the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. the material for the mask substrates, for example, is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material. At 157 nm synthetic fused silica shows only very low transmittance. For this reason alternative materials were discussed, i.e. CaF2, MgF2 and Al2O3 But all these materials have their own drawbacks, i.e. MgF2 shows birefringence, CaF2 and MgF2 have a large thermal expansion and Al2O3 has only low transmittance due to a high impurity level. On the other hand recent developments of modified fused silica demonstrate that high transmittance values can be achieved (i.e. 80% for 1 cm path length). this, together with its excellent mechanical and thermal properties, makes fused silica the material of choice for 157 nm masks.

关键词： Silica Photomasks Absorption Optical lithography Magnesium fluoride Refractive index Fluorine Transmittance Crystals Optics manufacturing

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mask definition by nanoimprint lithography

Mask definition by nanoimprint lithography

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany

ISBN: (纸本)0819440396

mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

关键词： Polymers Nanoimprint lithography Oxygen Photomasks Reactive ion etching Etching Scanning electron microscopy Lithography Plasma Dry etching

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Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond

Cluster tool for photo mask inspection and qualification at ...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH

the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manufacturer and user. Cluster Software and common interfaces to the Cluster Tools allow to perform these measurements fast and in an automated manner suitable for production.

关键词： Photolithography

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Charged particle beam induced processes and its applicability to mask repair for next generation lithographies

Charged particle beam induced processes and its applicabilit...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany

ISBN: (纸本)0819440396

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. this compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

关键词： Ion beam lithography

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Hierarchical mask data preparation and special fracturing techniques in MGS

Hierarchical mask data preparation and special fracturing te...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Bürger, B Bätz, U Kunze, K Wolf, H Fraunhofer IMS Dresden Germany

ISBN: (纸本)0819431397

MGS is a layout postprocessor software including a fracturing engine for Leica's ZBA e-beam writers. With the ZBA series including the new ZBA300 and its ability to write submicrometer masks for advanced technologies two main tasks have to be mastered in data preparation: 1. Processing of large and dense layouts. 2. Contribution to increased mask quality by optimized fracturing. these challenges are not restricted to the ZBA tools only;on the contrary they are of general interest for data preparation.

关键词： Magnesium Photomasks Algorithm development Edge roughness integrated circuit design integrated circuits Liquid crystals Lithography Sensors Structural design

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Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool

Inspection of alternating PSM reticles using UV-based 365 nm...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Rosenbusch, A Har-zvi, M Gottlib, G Etec Syst Inc Appl Mat Co Hayward CA 94545 USA

ISBN: (纸本)0819445312

the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.

关键词： phase shift mask 248 nm AAPSM i-line inspection mask inspection reticle enhancement technique (RET)

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High precision mask fabrication for deep X-ray lithography

High precision mask fabrication for deep X-ray lithography

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schmidt, A Himmelsbach, G Lüttge, R Adam, D Hoke, F Schacke, H Belic, N Hartmann, H Burkhard, F Wolf, H Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819436143

Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components becomes possible. We report on a new approach where the direct patterning of an intermediate mask has been performed by an upgraded Leica ZBA23 shaped beam electron writer with an acceleration voltage of 40 kV. Optimised development and exposure processes as well as the use of particularly performed proximity correction methods allowed to produce feature sizes down to 0.4 mu m. Taking CD-values of the final gold absorber structure as a target, an optimised parameter set has been found to manufacture periodic lines-and-spaces structures of 1.5 mu m width with an accuracy of 0.18 mu m per edge which were written into 2 mu m thick PMMA resist. Additionally, new intermediate mask membrane materials have been investigated. Special PECVD deposition processes have been developed in order to produce thin mask membranes made from silicon nitride, silicon carbide, and diamond. We produced a fully operational LIGA working mask with a thickness of 4.5 mu m on the basis of a diamond membrane with a 30% thickness uniformity over a process diameter of 60 mm. Finally, thorough investigations have been performed in order to determine the accuracy of structure transfer in the X-ray lithography process to the final LIGA mask. Taking all the structure accuracy limiting aspects into account, we found a runout per edge of 0.15 mu m using the BESSY I radiation spectrum as a reference. these data fit very precisely into experimentally obtained results.

关键词： Photomasks Electron beam lithography Gold Silicon X-ray lithography Polymethylmethacrylate Diamond Manufacturing Silicon carbide mask making

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mask CD uniformity impact during incoming quality control

Mask CD uniformity impact during incoming quality control

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Villa, E Baracchi, E Rosenbusch, A Har-zvi, M Gottlib, G STMicroelect I-20041 Agrate Brianza MI Italy

ISBN: (纸本)0819445312

the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by comparing it's quantitative results with CD measurements. masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared.

关键词： Photomasks Critical dimension metrology Semiconducting wafers Inspection Reticles Control systems Metrology Quality systems Wafer inspection Cadmium

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mask technology for EUV lithography

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 30-39页

作者： Bujak, M. Burkhart, S. Cerjan, C. Kearney, P. Moore, C. Prisbrey, S. Sweeney, D. Tong, W. Vernon, S. Walton, C. Warrick, A. Weber, F. Wedowski, M. Wilhelmsen, K. Bokor, J. Lawrence Livermore Natl Lab

Extreme ultraviolet lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. mask fabrication is one of the key challenges in EUVL. the mask blank is a silicon wafer coated with 40 pairs of Mo and Si, designed to maximize reflectivity at 13.4 nm. the mask blank is coated with an absorbing film that is patterned with the desired integrated circuit features using conventional mask patterning lithography, followed by reactive ion etching. the technical approaches to fabricating EUVL mask blanks and patterning mask absorber features are presented.

关键词： Photolithography

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