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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"
97 条 记 录,以下是11-20 订阅
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through the looking glass: What is on the horizon for the mask Maker?
Through the looking glass: What is on the horizon for the Ma...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Mackay, RS Eynon, BG Mathur, DP Photron Inc Austin TX 78728 USA
the future of mask industry technology is in flux. While the requirements for current and near-term lithographic capability is well understood, advanced lithography options pose a completely new set of challenges to t... 详细信息
来源: 评论
Modified fused silica for 157 nm mask substrates
Modified fused silica for 157 nm mask substrates
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany
the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demand... 详细信息
来源: 评论
mask definition by nanoimprint lithography
Mask definition by nanoimprint lithography
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany
mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to ... 详细信息
来源: 评论
Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond
Cluster tool for photo mask inspection and qualification at ...
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH
the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manu... 详细信息
来源: 评论
Charged particle beam induced processes and its applicability to mask repair for next generation lithographies
Charged particle beam induced processes and its applicabilit...
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany
A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of... 详细信息
来源: 评论
Hierarchical mask data preparation and special fracturing techniques in MGS
Hierarchical mask data preparation and special fracturing te...
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15th european conference on mask technology for integrated circuits and microcomponents
作者: Bürger, B Bätz, U Kunze, K Wolf, H Fraunhofer IMS Dresden Germany
MGS is a layout postprocessor software including a fracturing engine for Leica's ZBA e-beam writers. With the ZBA series including the new ZBA300 and its ability to write submicrometer masks for advanced technolog... 详细信息
来源: 评论
Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool
Inspection of alternating PSM reticles using UV-based 365 nm...
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Rosenbusch, A Har-zvi, M Gottlib, G Etec Syst Inc Appl Mat Co Hayward CA 94545 USA
the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology.... 详细信息
来源: 评论
High precision mask fabrication for deep X-ray lithography
High precision mask fabrication for deep X-ray lithography
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Schmidt, A Himmelsbach, G Lüttge, R Adam, D Hoke, F Schacke, H Belic, N Hartmann, H Burkhard, F Wolf, H Inst Mikrotech Mainz GmbH D-55129 Mainz Germany
Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components bec... 详细信息
来源: 评论
mask CD uniformity impact during incoming quality control
Mask CD uniformity impact during incoming quality control
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Villa, E Baracchi, E Rosenbusch, A Har-zvi, M Gottlib, G STMicroelect I-20041 Agrate Brianza MI Italy
the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in th... 详细信息
来源: 评论
mask technology for EUV lithography
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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 30-39页
作者: Bujak, M. Burkhart, S. Cerjan, C. Kearney, P. Moore, C. Prisbrey, S. Sweeney, D. Tong, W. Vernon, S. Walton, C. Warrick, A. Weber, F. Wedowski, M. Wilhelmsen, K. Bokor, J. Lawrence Livermore Natl Lab
Extreme ultraviolet lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. mask fabrication is one of the key... 详细信息
来源: 评论