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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是21-30 订阅

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mask availability for next-generation lithography

Mask availability for next-generation lithography

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Lercel, MJ Fisch, E Racette, KC Lawliss, M Williams, CT Kindt, L Huang, C IBM Corp Photron NGL Mask Ctr Competency Essex Jct VT 05452 USA

ISBN: (纸本)0819445312

the Next Generation Lithography (NGL) mask Center of Competency (MCoC) has been developing mask technology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in both the membrane and reflective mask formats. the mask technology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. this information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we disucss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.

关键词： Photomasks Inspection Extreme ultraviolet lithography Lithography X-rays Chromium Etching Image processing Multilayers Reflectivity

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Investigation of Cr etch chamber seasoning

Investigation of Cr etch chamber seasoning

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Nesladek, P Ruhl, G Kristlib, M Adv Mask Technol Ctr Dresden Germany

ISBN: (纸本)0819454370

One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. the increasing demands on high-end masks cause a narrowing of both mask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfil these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.

关键词： Cr plasma etch MTT stability seasoning

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Early mask making during the 1960's in Dresden

Early mask making during the 1960's in Dresden

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunhofer Inst Photon Mikrosyst IPMS Dresden Germany

ISBN: (纸本)0819450189

One of the first european institutes for microelectronics, the Arbeitsstelle fur Molekularelektronik Dresden AME, was founded in 1961 by WERNER HARTMANN. the purpose was to develop processes for fabrication of integrated circuits. Concerning microlithography at first a five-stage mask technique was used since 1965. the artwork original which was called "Vorlage" was cut with a scale of about 200:1. Using a reduction camera the artwork original was reduced about 20 times, to get the reticle known as the "Zwischennegativ". this reticle was then further reduced about 10 times by "step and repeat", using a projection microscope, to get a master mask known as the "Originalschablone" whose scale was then 1: 1. By direct photocopying of the master mask one obtained a working mask which was called the "Arbeitsschablone". Finally, an aligned direct exposure of the working mask on to a wafer created, layer by layer, the micro-pattern of the chip array. Concerning the materials a double layer film was used for the artwork originals, and 2 inch photographic plates were used for the reticles and masks. In this way the first East German bipolar integrated circuits, NOR gates with 8 transistors, were made in Dresden in 1967. this was done with 4 masking levels on 25 mm Si wafers with 1.5 mm chip size and 20 mum minimal figure width (critical dimensions). In the late 1960's some improvements were introduced, particularly the 6-barrel semi-automatic photorepeater, which improved the figure width and gave lower tolerances. the largest chip made in 1969 was a J-K master-slave flipflop, this contained 36 transistors on a chip 1.6 mm x 1.8 mm and was done with 9 masking levels and with 10 mum minimal figure width.

关键词： Photomasks Reticles mask making Photography integrated circuits Microscopes Semiconducting wafers Cameras Transistors Microelectronics

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mask quality (control) evaluation using the Virtual Stepper System (VSSTM)

Mask quality (control) evaluation using the Virtual Stepper ...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Karklin, Linard Weed, J.Tracy Li, Junling Numerical Technologies Inc San Jose United States

the Virtual Stepper System (VSSTM) demonstrates high sensitivity and good accuracy to measure critical dimension (CD) variations and is capable of accurately predicting how CD variations are transferred into silicon. this technology can be fine tuned to acquire images through on-line or off-line inspection systems and provides very consistent, accurate results. VSS a proven technology for evaluating mask defect printability can be applied to reticle quality control and provide data on CD variations, corner rounding, and edge roughness.

关键词： masks

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Integration of mask R&D and mask manufacturing to support the european semiconductor industry

Integration of mask R&D and mask manufacturing to support th...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Dilger, M AMTC Adv Mask Technol Ctr D-01330 Dresden Germany

ISBN: (纸本)0819450189

the increasing gap between microelectronics minimum feature size and the exposure wavelength is a key challenge to the semiconductor industry. In the last 3 to 5 years mask technology has become a key contribute to bridge the sub wavelength gap. In particular optical enhancement technologies like Phase Shift masks (PSM) technologies and Optical Proximity Correction (OPC) methods have become widely used tools to improve optical imaging. However the use of these technologies has increased the complexity of mask making. In particular control of the critical dimension (CD) and defect control including defect inspection face new challenges for advanced Phase Shift masks. Inline with the increasing technology requirements the investment in mask technology is continuous increasing for a smaller volume of high end products which can afford costs of above 1 Mio. US $ for a mask set. therefore new concepts are required to support semiconductor manufacturers with advanced, customer specific photomasks at reasonable costs. the Advanced mask technology Center (AMTC) concept was therefore jointly developed by the three partners Advanced Micro Devices (AMD), DuPont Photomask (DPI) and Infineon Technologies (Infineon) for this purpose. the paper outlines the vision, the plans and the current status of the AMTC.

关键词： Photomasks Semiconductors Manufacturing Microelectronics Critical dimension metrology Lithography mask making Optical proximity correction Phase shifts Semiconducting wafers

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High precision mask repair using nanomachining

High precision mask repair using nanomachining

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Verbeek, M White, R Klos, M Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Nanomachining has recently been introduced as a new option for the repair of photomasks. the RAVE nm1300 system is a high precision system for subtractive removal of opaque mask defects. the first such system was installed at the Infineon mask House in Munich, Germany. this paper presents the results of the acceptance testing. Programmed pattern defects on binary chrome on glass masks, alternating phase shifting masks and both 248nm and 193nm halftone phase shifting masks were used for these tests. Some examples of carbon patch trimming, sequential defect removing as well as repairing of "non-removable" particles and irregularly shaped quartz bump defects demonstrate the unique capabilities of the tool.

关键词： Quartz Phase shifting Carbon Photomasks Particles Opacity Atomic force microscopy Binary data Glasses Scanning electron microscopy

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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mask technologies for deep X-ray LIGA

Mask technologies for deep X-ray LIGA

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Singleton, L Detemple, P Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819450189

masks for LIGA applications requiring deep X-ray lithography have different specifications compared to those masks used in microelectronic applications. Generally, deep X-ray LIGA applications require resist heights greater than 100 mum, whereas accurate pattern transfer in this depth of resist is obtained by using highly parallel synchrotron radiation beam from storage rings in the lithography. Given the unusual nature of the lithography, the requirements for the mask blank and the absorber structures are quite different from those used in optical lithography. this paper discusses different approaches to mask making, and weighs up the advantages and disadvantages of the different approaches. In particular, emphasis will be placed on the changes in critical dimensions and sidewall roughnesses in the resist structures produced by the different mask technologies.

关键词： LIGA deep X-ray lithography DXRL PMMA optical components waveguides moulding

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mask error enhancement factor

Mask error enhancement factor

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Maurer, W. Infineon Technologies AG Munich Germany

Optical lithography at the limit of resolution is a highly non-linear pattern transfer process. One consequence of this is an apparent magnification of mask errors. the paper first demonstrates early experimental evidence of this effect. then it assesses the influence of pattern geometry, of the lithography tool setup, and of different optical enhancement techniques on the MEEF using primarily simulation data. the correspondence of MEEF as an effect of mask linewidth variations to the increased printability of mask defects is illustrated. Strategies to minimize the MEEF - like alternating phase shift masks - are presented. Because the MEEF describes conveniently the concerted action of all components on the whole lithographic pattern transfer process, it is proposed to use the MEEF as a new yardstick to characterize the degree of difficulty of a given lithographic process.

关键词： masks

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

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19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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