检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

92 篇 会议
5 篇 期刊文献

馆藏范围

97 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

93 篇 工学
- 78 篇 电气工程
- 36 篇 机械工程
- 24 篇 电子科学与技术（可...
- 17 篇 计算机科学与技术...
- 9 篇 软件工程
- 7 篇 测绘科学与技术
- 6 篇 光学工程
- 5 篇 化学工程与技术
- 4 篇 材料科学与工程（可...
- 4 篇 轻工技术与工程
- 1 篇 仪器科学与技术
- 1 篇 信息与通信工程
- 1 篇 航空宇航科学与技...
65 篇 理学
- 64 篇 物理学
- 5 篇 数学
- 4 篇 化学
- 1 篇 地质学
25 篇 医学
- 25 篇 临床医学
6 篇 管理学
- 6 篇 管理科学与工程(可...
- 2 篇 工商管理
2 篇 法学
- 2 篇 社会学
1 篇 经济学
- 1 篇 应用经济学

主题

31 篇 photomasks
15 篇 masks
12 篇 lithography
11 篇 etching
11 篇 semiconducting w...
11 篇 critical dimensi...
10 篇 manufacturing
10 篇 mask making
10 篇 inspection
8 篇 reticles
6 篇 optical proximit...
6 篇 silicon
6 篇 photolithography
6 篇 quartz
5 篇 glasses
5 篇 extreme ultravio...
5 篇 scanning electro...
5 篇 metrology
5 篇 optical lithogra...
4 篇 mask

机构

3 篇 infineon technol...
2 篇 infineon technol...
2 篇 tuilaser ag d-82...
2 篇 fraunhofer ims d...
2 篇 imec vzw b-3001 ...
2 篇 infineon technol...
2 篇 inst mikrotech m...
1 篇 dai nippon print...
1 篇 infineon technol...
1 篇 dupont photomask...
1 篇 rave llc
1 篇 t nova deutsch t...
1 篇 ltd manchester u...
1 篇 univ gesamthsch ...
1 篇 siemens ag munic...
1 篇 etec systems inc...
1 篇 imec vzw
1 篇 electroopt co ho...
1 篇 dupont photomask...
1 篇 computat mech ct...

作者

5 篇 ehrmann a
5 篇 butschke j
4 篇 mathuni j
4 篇 letzkus f
4 篇 irmscher m
4 篇 jonckheere r
4 篇 kamm fm
4 篇 philipsen v
3 篇 scheer hc
3 篇 rosenbusch a
3 篇 springer r
3 篇 schätz t
3 篇 rau j
3 篇 brück hj
3 篇 struck t
3 篇 aschke l
2 篇 haugeneder e.
2 篇 rüggeberg f
2 篇 ehrmann a.
2 篇 springer r.

语言

97 篇 英文

检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是31-40 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

mask strategy at international SEMATECH

Mask strategy at international SEMATECH

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Kimmel, KR Int SEMATECH Austin TX USA

ISBN: (纸本)0819445312

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the International technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. the largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. the development strategy at International SEMATECH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

关键词： mask photomask mask cost lithography cost International SEMATECH

来源：评论

学校读者我要写书评

暂无评论

130 nm node mask development

130 nm node mask development

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

来源：评论

学校读者我要写书评

暂无评论

Integration of OPC and mask data preparation

Integration of OPC and mask data preparation

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Schulze, S LaCour, P Rodriguez, N Mentor Graph Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819450189

As design rules shrink aggressively while the wavelength reduction in the exposure equipment cannot keep up, extensive usage of resolution enhancement techniques (RET) has complicated the generation and handling of mask writing data. Consequently, file size growth and computing times for mask data preparation rise beyond feasibility. In order to address these issues, an integrated flow has been developed. It starts out with the gds-file delivered by the backend of design and combines optical proximity correction, design rule and mask process rule verification, and all other necessary steps for mask data preparation into a single flow. the benefits of this strategy are time savings in data processing and handling, the elimination of intermediate files, and the elimination of data format interface issues. Since the new flow takes full advantage of the design hierarchy, file sizes shrink considerably and the whole data preparation infrastructure can be simplified. the paper will describe the transition to the new flow and quantify the benefits.

关键词： Photomasks Optical proximity correction Resolution enhancement technologies Databases Manufacturing Data storage Etching Interfaces Optical design Process modeling

来源：评论

学校读者我要写书评

暂无评论

the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

来源：评论

学校读者我要写书评

暂无评论

Pattern placement metrology tool matching within DPI's sites

Pattern placement metrology tool matching within DPI's sites

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Talene, N Röth, KD Dupont Photomasks France ZI Rousset France

ISBN: (纸本)0819431397

the requirements of the 0.18 mu m and 0.25 mu m technologies lead to advanced specifications for the mask making technology in terms of pattern placement metrology, tighter than 52nm (3s) for the 0.25 mu m generation and around 35nm (3s) for the next 0.18 mu m generation. In addition, the tremendous demand regarding cycle time reduction, performance to delivery schedule, and technical complexity on products impose to the mask manufacturer like Dupont Photomasks Inc. (DPI) the necessity to mix and match products between all the DPI sites. From this perspective, the matching of all the pattern placement metrology tools of all DPI production sites is mandatory. In order to control the tight specifications, the strategy for metrology is to implement a unique grid for registration on a world wide base at DPI and to calibrate all metrology tools and all writing tools to this standard grid. All investigations were performed on the LEICA LMS IPRO tools using the new correction software from Leica Microsystems.

关键词： Metrology Photomasks Calibration Manufacturing Lithography mask making Overlay metrology Semiconductors Microsystems Standards development

来源：评论

学校读者我要写书评

暂无评论

OASIS - Progress on implementing the new stream format for containing data size explosion

OASIS - Progress on implementing the new stream format for c...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Steffen, SA Kent, NB Buck, P Mentor Graphics Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819454370

the data volumes of individual files used in the manufacture of modern integrated circuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files in 2004 exceed 200 GB threshold, worst case. OASIS, the new stream format developed under the sponsorship of SEMI, has been approved in the industry-wide voting in June 2003. the new format that on average will reduce the file size by an order of magnitude, enables to streamline data flows and provides increased efficiency in data exchange. the work to implement the new format into software tools is in progress. this paper gives an overview on the new format, reports results on data volume reduction and is a report on the status and benefits the new format can deliver. A data flow relying on OASIS as the input and transfer format is discussed.

关键词： GDSII stream OASIS integrated circuit layout mask making photomask hierarchical processing

来源：评论

学校读者我要写书评

暂无评论

Simulation study of pattern printability for reflective mask in EUV lithography

Simulation study of pattern printability for reflective mask...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Sugawara, M Chiba, A Nishiyama, I ASET EUV Proc Technol Res Lab Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)0819450189

Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an imbalance in the intensity distribution of the light diffracted from mask patterns. It was found that the shifts in the edges of 30-nm-wide T-shaped patterns on a wafer due to both shadowing and optical proximity effects could be corrected simultaneously at an incident angle of 4.84degrees to obtain the proper edge positions. An attenuated phase shift mask with various values for the attenuated reflectance was used to evaluate the printability of isolated line and hole patterns. Annular illumination was found to increase the DOF for isolated patterns 18 nm wide on a wafer, and a DOF of 300 nm was obtained for hole patterns 40 nm wide on a wafer. Printability was also evaluated for an alternating phase shift mask (alt-PSM) with an additive structure. An alt-PSM significantly increases the pattern contrast and enlarges the DOF up to 300 nm for isolated patterns 18 nm wide on a wafer.

关键词： optical proximity correction attenuated phase shift mask alternating phase shift mask

来源：评论

学校读者我要写书评

暂无评论

AutoMOPS: B2B and B2C in mask making. mask manufacturing performance and customer satisfaction improvement through better information flow management

AutoMOPS: B2B and B2C in mask making. Mask manufacturing per...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： de Ridder, L Filies, O Rodriguez, B Kuijken, A Nimble NV (Belgium) Infineon Technologies AG (Germany)

ISBN: (纸本)0819440396

through application of modern supply chain concepts in combination with state-of-the-art Information technology, mask manufacturing performance and customer satisfaction can be improved radically the AutoMOPS solution emphasises on the elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and prototype production stages.

关键词： Photomasks Manufacturing mask making Semiconducting wafers Telecommunications Information technology Computer aided design Optical proximity correction Prototyping Standards development

来源：评论

学校读者我要写书评

暂无评论

mask manufacturing contribution on 248nm & 193nm lithography performances

Mask manufacturing contribution on 248nm & 193nm lithography...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Barberet, A Fanget, G Richoilley, JC Tissier, M Quere, Y DuPont Photomasks F-13106 Rousset France

ISBN: (纸本)0819440396

In this study, we focus on mask manufacturing contribution on 248nm & 193nm lithography performances. the masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). masks are optimized for 150nm node at wafer scare, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.

关键词： mask manufacturing 248nm-lithography 193nm-lithography linearity AFLV MEEF

来源：评论

学校读者我要写书评

暂无评论

Development and characterization of new CD mask standards:: a status report

Development and characterization of new CD mask standards:: ...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hauffe, B Döbereiner, S Brück, HJ Brendel, B Bettin, L Röth, KD Steinberg, W Speckbacher, P Sedlmeier, W Engel, T Hässler-Grohne, W Mirandé, W Bosse, H Infineon Technol AG D-81541 Munich Germany

ISBN: (纸本)0819450189

We report on the current status of a project on development and characterization of CD photomasks with 6025 format to be used as reference standards for different type of CD metrology instruments. the project consortium consists of mask suppliers, manufacturers of CD metrology instruments, users of such instruments and calibration laboratories. Different type of CD metrology instrumentation, namely optical CD microscopes, CD-SEM, and AFM will be applied for investigation and measurement of microstructures, additionally supported by AIMS tool. We will describe the basic design criteria of the mask standard and first measurement results gained with different metrology tools on the prototype mask standards.

关键词： Photomasks Prototyping Metrology Standards development Atomic force microscopy Calibration Line edge roughness Critical dimension metrology Chromium Opacity

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共10页 << < 1 2 3 4 5 6 7 8 9 10 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：