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Hierarchical mask data preparation and special fracturing techniques in MGS

Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 135-136页

作者： Buerger, B. Baetz, U. Kunze, K. Wolf, H. Fraunhofer IMS Dresden Germany

MGS is a layout postprocessor software including a fracturing engine for Leica's ZBA e-beam writers. In MGS, a new hierarchy called output hierarchy, is automatically built from the design hierarchy as it is found in the input layout file. In all hierarchical levels of the layout input is looked for candidates to be transferred to the output hierarchy. Criteria for structure selection are, number of calls, use in array calls and dimension of structure. the goal is to achieve a 1-level output hierarchy of all disjunctive structures where one structure has the same environment at all positions where it is called.

关键词： integrated circuit layout

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Dynamic mask defects in hot embossing lithography

Dynamic mask defects in hot embossing lithography

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Bogdanski, N Schulz, H Wissen, M Scheer, HC Univ Gesamthsch Wuppertal Fac Elect Informat & Media Engn Wuppertal Germany

ISBN: (纸本)0819454370

Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. the initial polymer layer thickness was chosen as to fill the stamp cavities with nearly no surplus of polymer material. the residual layers after imprint were in the range of 50 nm and could be cleared at 50% overetch within 90 s in an oxygen RIE step. As there was not enough polymer material available for a complete filling of the cavities when a residual layer remains, filling defects occurred. High imprint temperature and thus low viscosity led to formation of deep defects in the imprint and thus the mask to be formed by embossing. Lift off experiments revealed that within the defective regions the remaining polymer layer thickness was smaller than the imprinted residual layer. In order to avoid such mask defects the imprint temperature had to be reduced.

关键词： nanoimprint hot embossing mask defects

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Measures to achieve 20-nm IPL stencil mask distortion

Measures to achieve 20-nm IPL stencil mask distortion

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Haugeneder, E Chalupka, A Lammer, T Loeschner, H Kamm, FM Struck, T Ehrmann, A Kaesmaier, R Wolter, A Butschke, J Irmscher, M Letzkus, F Springer, R IMS Nanofabricat GmbH Vienna Austria

ISBN: (纸本)0819445312

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).

关键词： Photomasks Semiconducting wafers Distortion Silicon Ion beams Electrodes Ions Wafer bonding Manufacturing Projection lithography

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Initial results from a Leica ZBA 31H+ shaped e-beam mask writer located at the Photronics Advanced mask Shop in Manchester, England

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 63-68页

作者： Johnson, Stephen Marshall, Paul Osborne, Peter Doering, Hans-Joachim Ehrlich, Christian Ltd Manchester United Kingdom

the ZBA 31H+ is a variable shaped spot, vector scan electron beam lithography system operating at 20 keV. Enhancements from the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. the system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 250 nanometer design rules and beyond, with high accuracy and productivity. the initial results from the Leica ZBA 31H+ shaped electron beam mask writer located at the Phototronics Advanced mask Shop in Manchester, England are presented.

关键词： Electron beam lithography

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Simulation study of 193-nm phase-shifting masks: Analysis of distributed defects of embeded attenuated phase mask (EAPSM)

Simulation study of 193-nm phase-shifting masks: Analysis of...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Karklin, L Numer Technol Inc San Jose CA 95134 USA

ISBN: (纸本)0819445312

With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. mask inspection and mask defect repair are increasingly important components of advanced photo mask technology. the low cost of mask manufacturing and the necessity of delivering photo masks to production floor in the shortest possible time require new photo mask specs and acceptance criteria. It is no longer economically viable to reject a photo mask because some mask anomalies were found, or repair all the defects detected by state of the art inspection tool. One should use a smart approach to separate tolerable mask anomalies from real mask defects that might negatively affect device yield. However, this is not a trivial task. With rising mask complexity (e.g., binary masks with aggressive optical proximity correction or phase-shifting masks (PSM)-attenuated and alternating) and inspection and metrology tools running out of steam, new technologies such as the AIMS(TM) and Virtual Stepper(R) system must be used to sort nuisance mask defects from real ones. this will help to reduce the number of required defect repairs and shorten mask manufacturing cycle time. However, it is very difficult to utilize AIMS in the production environment because of its low operational speed;the Virtual Stepper software, in its turn, does rely on mask data captured by inspection/metrology hardware. In the case of phase masks, such as Attenuated PSM (especially high transmission EAPSM) and Alternating PSM, inspection tools are not able to accurately retrieve optical properties of mask materials and as a result defect analysis is becoming very difficult and is an unreliable task. A very common type of PSM defect that occur during mask manufacturing and repair processes are the so-called distributed defects such as gallium stains, riverbed pinhole clusters, and large chrome residuals (on EAPSM). It is very difficult to get accura

关键词： Photomasks Inspection Semiconducting wafers Critical dimension metrology Lithography Manufacturing Phase shifts Metrology integrated circuits Reticles

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Elements of hierarchical mask data preparation - Bottom up or top down?

Elements of hierarchical mask data preparation - Bottom up o...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Kalus, CK Simecek, M SIGMA C D-81737 Munich Germany

ISBN: (纸本)0819445312

Data Preparation has become another challenge to the many existing ones in mask making. this was mainly brought about by the advent of OPC and PSM layouts. the amount of data, doubling every year, has experienced a quantum leap. the more aggressive optical proximity correction the greater the leap. Hierarchical data treatment is one of the most powerful means to keep memory and CPU consumption in reasonable ranges [1]. Only recently, however, has this technique acquired more public attention [2], [3]. In this paper we will present means to quantitatively measure the degree of hierarchy. In addition to global numbers local numbers turn out to be extremely helpful. they may serve the purpose to treat different branches of a tree, e.g. of a memory layout, by different approaches. Several alternatives exist, which have, to date, not been thoroughly investigated. One is a bottom-up attempt to treat cells starting with the most elementary cells. the other one is a top-down approach which lends itself to creating a new hierarchy tree. A trivial approach, widely used so far, is to flatten the layout. Conditions will be shown for the alternatives to work most effectively.

关键词： integrated circuit layout

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mask technology for EUV lithography

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 30-39页

作者： Bujak, M. Burkhart, S. Cerjan, C. Kearney, P. Moore, C. Prisbrey, S. Sweeney, D. Tong, W. Vernon, S. Walton, C. Warrick, A. Weber, F. Wedowski, M. Wilhelmsen, K. Bokor, J. Lawrence Livermore Natl Lab

Extreme ultraviolet lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. mask fabrication is one of the key challenges in EUVL. the mask blank is a silicon wafer coated with 40 pairs of Mo and Si, designed to maximize reflectivity at 13.4 nm. the mask blank is coated with an absorbing film that is patterned with the desired integrated circuit features using conventional mask patterning lithography, followed by reactive ion etching. the technical approaches to fabricating EUVL mask blanks and patterning mask absorber features are presented.

关键词： Photolithography

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Contact layer printing using alternating phase-shifting masks: mask making, patterning results and production implementation

Contact layer printing using alternating phase-shifting mask...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Pforr, R Dettmann, W Eisenhut, M Hennig, M Hofmann, D thiele, J thielscher, G Infineon Technol SC300 GmbH & Co KG D-01099 Dresden Germany

ISBN: (纸本)0819454370

Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the enlarged process window compared to conventional masks allows to shrink the contacts size or to substitute advanced scanners by older generation steppers for contact layer patterning. Using older generation exposure systems may cause problems originating in worse lens aberration performance. A method will be described how to overcome overlay problems by applying a specifically designed OL measurement target.

关键词： contacts phase-shifting masks layout conversion off-axis illumination pattern shift overlay

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Cleaning of low thermal expansion materials for low defect EUVL mask substrates

Cleaning of low thermal expansion materials for low defect E...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Krüger-Velthusen, E Friemel, F Aschke, L Lenzen, F Schott Lithotec AG Meiningen Germany

First tests for cleaning Zerodur(R) were accomplished. Because there are only a few cleaning methods suitable for the removal of small particles down to 50 nm we have investigated the behaviour of Zerodur(R) in DI wat... 详细信息

ISBN: (纸本)0819445312

关键词： Zerodur Ultrasonics Unmanned aerial vehicles Photomasks Atomic force microscopy Extreme ultraviolet lithography Particles Glasses Quartz Radium

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Determination of residual stress and elastic constants of silicon open stencil masks for ion projection lithography

Determination of residual stress and elastic constants of si...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Degen, A Shi, F Sossna, E Sunyk, R Voigt, J Volland, B Reinker, B Rangelow, IW Univ Gesamthsch Kassel Inst Tech Phys D-34109 Kassel Germany

ISBN: (纸本)0819431397

the Ion Projection Lithography is one challenge for a semiconductor technology, starting with sub micron structures, which are beyond the facilities of conventional UV lithography. Within this field of research one of the most critical aspects is the development of stencil masks, because the stress formation during the various process steps affects the critical dimensions (CD) of the structures to be written. In this paper different methods for the determination of residual, stress and elastic constants of thin (< 10 mu m) membranes of doped silicon are reviewed and additionally, a novel technique is presented. First experimental results show, that they are quite different from the values of the bulk material.

关键词： ion projection lithography silicon open stencil mask elastic constants residual stress

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