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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是51-60 订阅

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Actual performance data obtained on new transmitted light mask metrology system

Actual performance data obtained on new transmitted light ma...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Roeth, KD Schlueter, G Leica Microsyst Semicond GmbH D-35578 Wetzlar Germany

ISBN: (纸本)0819445312

To keep pace with continuously shrinking design rules for masks and reticles Leica Microsystems has developed the new mask metrology tool LMS IPRO2. It is designed to measure pattern placement and CDs in transmitted light at Wine (365nm) illumination. Details on improvements over the previous system and performance data from the beta-site system are presented. the step to a shorter illumination wavelength leads to a better optical resolution power resulting in an improved edge detection. Transmitted light illumination enables to use the tool for CD measurement on quartz and phase shift masks.

关键词： mask metrology transmitted light measurement. optical CD-metrology pattern placement metrology next generation lithography masks (NGL)

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Simulation study of 193-nm phase-shifting masks: Analysis of distributed defects of embeded attenuated phase mask (EAPSM)

Simulation study of 193-nm phase-shifting masks: Analysis of...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Karklin, L Numer Technol Inc San Jose CA 95134 USA

ISBN: (纸本)0819445312

With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. mask inspection and mask defect repair are increasingly important components of advanced photo mask technology. the low cost of mask manufacturing and the necessity of delivering photo masks to production floor in the shortest possible time require new photo mask specs and acceptance criteria. It is no longer economically viable to reject a photo mask because some mask anomalies were found, or repair all the defects detected by state of the art inspection tool. One should use a smart approach to separate tolerable mask anomalies from real mask defects that might negatively affect device yield. However, this is not a trivial task. With rising mask complexity (e.g., binary masks with aggressive optical proximity correction or phase-shifting masks (PSM)-attenuated and alternating) and inspection and metrology tools running out of steam, new technologies such as the AIMS(TM) and Virtual Stepper(R) system must be used to sort nuisance mask defects from real ones. this will help to reduce the number of required defect repairs and shorten mask manufacturing cycle time. However, it is very difficult to utilize AIMS in the production environment because of its low operational speed;the Virtual Stepper software, in its turn, does rely on mask data captured by inspection/metrology hardware. In the case of phase masks, such as Attenuated PSM (especially high transmission EAPSM) and Alternating PSM, inspection tools are not able to accurately retrieve optical properties of mask materials and as a result defect analysis is becoming very difficult and is an unreliable task. A very common type of PSM defect that occur during mask manufacturing and repair processes are the so-called distributed defects such as gallium stains, riverbed pinhole clusters, and large chrome residuals (on EAPSM). It is very difficult to get accura

关键词： Photomasks Inspection Semiconducting wafers Critical dimension metrology Lithography Manufacturing Phase shifts Metrology integrated circuits Reticles

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Elements of hierarchical mask data preparation - Bottom up or top down?

Elements of hierarchical mask data preparation - Bottom up o...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Kalus, CK Simecek, M SIGMA C D-81737 Munich Germany

ISBN: (纸本)0819445312

Data Preparation has become another challenge to the many existing ones in mask making. this was mainly brought about by the advent of OPC and PSM layouts. the amount of data, doubling every year, has experienced a quantum leap. the more aggressive optical proximity correction the greater the leap. Hierarchical data treatment is one of the most powerful means to keep memory and CPU consumption in reasonable ranges [1]. Only recently, however, has this technique acquired more public attention [2], [3]. In this paper we will present means to quantitatively measure the degree of hierarchy. In addition to global numbers local numbers turn out to be extremely helpful. they may serve the purpose to treat different branches of a tree, e.g. of a memory layout, by different approaches. Several alternatives exist, which have, to date, not been thoroughly investigated. One is a bottom-up attempt to treat cells starting with the most elementary cells. the other one is a top-down approach which lends itself to creating a new hierarchy tree. A trivial approach, widely used so far, is to flatten the layout. Conditions will be shown for the alternatives to work most effectively.

关键词： integrated circuit layout

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OPC aware mask and wafer metrology

OPC aware mask and wafer metrology

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Maurer, W Wiaux, V Jonckheere, R Philipsen, V Hoffmann, T Verhaegen, S Ronse, K England, J Howard, W KLA Tencor Corp Milpitas CA 95035 USA

ISBN: (纸本)0819445312

Lithography at its limit of resolution is a highly non-linear pattern transfer process. Typically the shapes of printed features deviate considerably from their corresponding features in the layout. this deviation is known as Optical Proximity Effect, and its correction Optical Proximity effect Correction or OPC. Although many other so-called optical enhancement technologies are applied to cope with the issues of lithography at its limit of resolution, almost none of these can re-store the linearity of the pattern transfer. Hence fully functional OPC has become a very basic requirement for current and future lithography processes. In general, proximity effects are two-dimensional (2d) effects. thus any measurement of proximity effects or any characterization of the effectiveness of OPC has to be two-dimensional. As OPC modifies shapes in the data for mask writing in a way to compensate for the expected proximity effects of the following processing steps, parameters describing the particular OPC-mask quality is a major concern. One-dimensional mask specifications, such as linewidth mean-to-target and uniformity, pattern placement, and maximum size of a tolerable defect, are not sufficient anymore to completely describe the functionality of a given mask for OPC. Two-dimensional mask specifications need to be evaluated. We present in this paper a basic concept for 2d metrology. Examples for 2d measurements to assess the effectiveness of OPC are given by the application of an SEM Image Analysis tool to an advanced 130nm process.

关键词： optical lithography SEM metrology two-dimensional metrology mask metrology OPC

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EUV mask development: Material and process

EUV mask development: Material and process

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Rau, J Wendt, H Mathuni, J Stepper, C Ehrmann, A Kamm, FM Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Extreme ultraviolet lithography (EUVL) is one of the most promising technologies for wafer feature sizes of below 50nm. the illumination wavelength will be approximately 13.5nm and consequently no transmissive optics can be used for this soft X-ray light. For several years intensive research work has been performed in different programs mainly through EUV-LLC, ASET and PREUVE. this has resulted in providing solutions for the most critical tasks of EUVL - powerful sources, defect free mask blanks and environmentally stable optics of high reflectivity. During the development with EUV-LLC an engineering test stand for illumination has been built which will be a powerful tool for the development of EUVL masks. We have studied the patterning of a EUVL mask for process development and repair tests. the material was a standard Cr absorber (as used in production) and a SiO2 buffer layer. the process investigation was focused on the dry etch stop behaviour of the etch processes and also on cleaning issues. the mask concept favoured today for EUVL masks is very similar to the masks used in production;consequently most work is performed on Cr as the absorber material and SiO2 as the buffer material. From results presented in recent years we can surmise that Cr and TaN are at present the most promising candidates as absorber materials [1,2]. However it is also known [3] that it will be very difficult to develop an etch-bias free process for Cr. In this paper we shall present our results detailing the etch properties of Ta and TaN as an absorber material. TaN is shown to be a promising absorber material. In addition, the impact of mask properties on placement and bow has been investigated with finite element calculations.

关键词： Etching Photomasks Extreme ultraviolet lithography Quartz Signal processing Silicon Tantalum Inspection Chromium Extreme ultraviolet

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mask definition by nanoimprint lithography

Mask definition by nanoimprint lithography

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany

ISBN: (纸本)0819440396

mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

关键词： Polymers Nanoimprint lithography Oxygen Photomasks Reactive ion etching Etching Scanning electron microscopy Lithography Plasma Dry etching

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Charged particle beam induced processes and its applicability to mask repair for next generation lithographies

Charged particle beam induced processes and its applicabilit...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany

ISBN: (纸本)0819440396

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. this compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

关键词： Ion beam lithography

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130 nm node mask development

130 nm node mask development

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

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AutoMOPS: B2B and B2C in mask making. mask manufacturing performance and customer satisfaction improvement through better information flow management

AutoMOPS: B2B and B2C in mask making. Mask manufacturing per...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： de Ridder, L Filies, O Rodriguez, B Kuijken, A Nimble NV (Belgium) Infineon Technologies AG (Germany)

ISBN: (纸本)0819440396

through application of modern supply chain concepts in combination with state-of-the-art Information technology, mask manufacturing performance and customer satisfaction can be improved radically the AutoMOPS solution emphasises on the elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and prototype production stages.

关键词： Photomasks Manufacturing mask making Semiconducting wafers Telecommunications Information technology Computer aided design Optical proximity correction Prototyping Standards development

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Application of E-beam chemically amplified resist to devices below 0.18μm node

Application of E-beam chemically amplified resist to devices...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Jeon, CU Kim, CH Choi, SW Han, WS Sohn, JM Samsung Electronics Co. Ltd. (South Korea)

ISBN: (纸本)0819440396

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. the pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist. We elucidated the degree of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal. type resist compared to an acrylate type resist. We have achieved CD uniformity of < 10nm in 3 sigma within 135 X 135 mm(2) field showing a high possibility for CAR process to be applied to the mask production for device generations, beyond 180nm.

关键词： Photomasks mask making Photoresist processing Optical proximity correction Scanning electron microscopy Critical dimension metrology Chemically amplified resists Scattering Vestigial sideband modulation Diffusion

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