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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"
97 条 记 录,以下是51-60 订阅
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Actual performance data obtained on new transmitted light mask metrology system
Actual performance data obtained on new transmitted light ma...
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Roeth, KD Schlueter, G Leica Microsyst Semicond GmbH D-35578 Wetzlar Germany
To keep pace with continuously shrinking design rules for masks and reticles Leica Microsystems has developed the new mask metrology tool LMS IPRO2. It is designed to measure pattern placement and CDs in transmitted l... 详细信息
来源: 评论
Simulation study of 193-nm phase-shifting masks: Analysis of distributed defects of embeded attenuated phase mask (EAPSM)
Simulation study of 193-nm phase-shifting masks: Analysis of...
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Karklin, L Numer Technol Inc San Jose CA 95134 USA
With constant push for smaller and faster devices photo mask technology has become the most critical part of the entire integrated circuit (IC) production flow. mask inspection and mask defect repair are increasingly ... 详细信息
来源: 评论
Elements of hierarchical mask data preparation - Bottom up or top down?
Elements of hierarchical mask data preparation - Bottom up o...
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Kalus, CK Simecek, M SIGMA C D-81737 Munich Germany
Data Preparation has become another challenge to the many existing ones in mask making. this was mainly brought about by the advent of OPC and PSM layouts. the amount of data, doubling every year, has experienced a qu... 详细信息
来源: 评论
OPC aware mask and wafer metrology
OPC aware mask and wafer metrology
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Maurer, W Wiaux, V Jonckheere, R Philipsen, V Hoffmann, T Verhaegen, S Ronse, K England, J Howard, W KLA Tencor Corp Milpitas CA 95035 USA
Lithography at its limit of resolution is a highly non-linear pattern transfer process. Typically the shapes of printed features deviate considerably from their corresponding features in the layout. this deviation is ... 详细信息
来源: 评论
EUV mask development: Material and process
EUV mask development: Material and process
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18th european conference on mask technology for integrated circuits and microcomponents
作者: Rau, J Wendt, H Mathuni, J Stepper, C Ehrmann, A Kamm, FM Infineon Technol AG Munich Germany
Extreme ultraviolet lithography (EUVL) is one of the most promising technologies for wafer feature sizes of below 50nm. the illumination wavelength will be approximately 13.5nm and consequently no transmissive optics ... 详细信息
来源: 评论
mask definition by nanoimprint lithography
Mask definition by nanoimprint lithography
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany
mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to ... 详细信息
来源: 评论
Charged particle beam induced processes and its applicability to mask repair for next generation lithographies
Charged particle beam induced processes and its applicabilit...
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany
A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of... 详细信息
来源: 评论
130 nm node mask development
130 nm node mask development
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA
As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist,... 详细信息
来源: 评论
AutoMOPS: B2B and B2C in mask making. mask manufacturing performance and customer satisfaction improvement through better information flow management
AutoMOPS: B2B and B2C in mask making. Mask manufacturing per...
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17th european conference on mask technology for integrated circuits and microcomponents
作者: de Ridder, L Filies, O Rodriguez, B Kuijken, A Nimble NV (Belgium) Infineon Technologies AG (Germany)
through application of modern supply chain concepts in combination with state-of-the-art Information technology, mask manufacturing performance and customer satisfaction can be improved radically the AutoMOPS solution... 详细信息
来源: 评论
Application of E-beam chemically amplified resist to devices below 0.18μm node
Application of E-beam chemically amplified resist to devices...
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17th european conference on mask technology for integrated circuits and microcomponents
作者: Jeon, CU Kim, CH Choi, SW Han, WS Sohn, JM Samsung Electronics Co. Ltd. (South Korea)
We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. the pattern fidelity of CA resist for small patterns such as serifs and scattering bars ... 详细信息
来源: 评论