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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是61-70 订阅

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Investigation of reticle defect formation at DUV lithography

Investigation of reticle defect formation at DUV lithography

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Bhattacharyya, K Volk, W Grenon, B Brown, D Ayala, J KLA Tencor Corp Hopewell Jct NY 12533 USA

ISBN: (纸本)0819450189

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k(1) processes industry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. this environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300-mm wafer fab receives roughly double the number of exposures without any cool down. period, as compared to the reticles in a 200-mm wafer fab. therefore, 193-nm lithography processes at a 300-mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193-nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this "growth".

关键词： DUV PSM mask contamination mask crystal-growth Cyanuric acid pellicle 193nm scanner STARlight

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Electron beam mask repair with induced reactions

Electron beam mask repair with induced reactions

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP Edinger, K Bihr, J Boegli, V Greiser, J NaWoTec GmbH (Germany) LEO Elektronenmikroskopie GmbH (Germany)

ISBN: (纸本)0819450189

Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. this material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. the tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz, TaN. and silicon carbide stencil masks are given.

关键词： Photomasks Electron beams Etching Interferometers Platinum Charged-particle lithography Control systems Quartz Scanning electron microscopy Silicon carbide

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Effect of electrostatic chucking on EUVL mask flatness

Effect of electrostatic chucking on EUVL mask flatness

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Mikkelson, A Engelstad, R Lovell, E Aschke, L Rüggeberg, F Sobel, F Computat Mech Ctr Madison WI 53706 USA

ISBN: (纸本)0819454370

the International technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. the SEMI EUVL mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. the FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). the flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. the results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

关键词： EUV lithography electrostatic chucking finite element analysis mask flatness

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PN and SOI wafer flow process for stencil mask fabrication

PN and SOI wafer flow process for stencil mask fabrication

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Butschke, J Ehrmann, A Haugeneder, E Irmscher, M Käsmaier, R Kragler, K Letzkus, F Löschner, H Mathuni, J Rangelow, IW Reuter, C Shi, F Springer, R Inst Mikroelekt Stuttgart D-70569 Stuttgart Germany

ISBN: (纸本)0819431397

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6" Si base wafers with 3 mu m membrane thickness and a membrane diameter between 120mm and 126mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Etching Semiconducting wafers Silicon Photomasks Oxides Electrochemical etching Metals Ions Lithography Wafer bonding

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Advanced writing strategies for high-end mask making

Advanced writing strategies for high-end mask making

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Lemke, Melchior Gramss, Juergen Doering, Hans-Joachim Eichhorn, Hans Schubert, Gerhard Leica Microsystems Lithography GmbH Jena Germany

In general the writing strategies of the Leica ZBA 320 tool are presented to the audience. Methods to achieve a high productivity in writing masks of the next generation are highlighted. thus, such writing modes like variable-shaped beam (VSB) using 6 shape types, vector scan and `writing-on-the-fly' are explained in their inter-action. Our strategies to constantly improve the accuracy parameters, such like n-pass writing and soft boundaries are not only described but also illustrated by our latest application results. Finally data processing by hierarchical data structures as the main factor to support the above-mentioned writing strategies is outlined in this paper.

关键词： masks

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the compact excimer laser - light source for optical (mask) inspection systems

The compact excimer laser - light source for optical (mask) ...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819440396

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 nm and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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Initial results from a Leica ZBA31H+shaped e-beam mask writer located at the Photronics advanced mask shop in Manchester, England.

Initial results from a Leica ZBA31H+shaped e-beam mask write...

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Johnson, S Marshall, P Osborne, P Doering, HJ Ehrlich, C Photron UK Ltd Manchester Lancs England

ISBN: (纸本)0819431397

Since Production started at the Photronics site in Manchester, England, mask writing capability had been centred on laser based technology (Etec CORE/ALTA toolsets). the Manchester site has now taken delivery of it's first e-beam system: the ZBA 31H+, manufactured by Leica Microsystems Lithography GMBH. the ZBA 31H+ system was designed for the production of reticles utilizing 250 nanometer design technology and is expected to play a key role in Photronics' future reticle development. the addition of an e-beam system to the current laser based technology, in this instance, has been driven by increasing customer demand and the requirement for reticles containing high resolution OPC structures. the ZBA 31H+ is a variable shaped spot, vector scan electron beam lithography system operating at 20 keV. Enhancements from the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. this system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 250 nanometer design rules, and beyond, with high accuracy and productivity.

关键词： Electron beam lithography

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Measurement results on after etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system

Measurement results on after etch resist coated features on ...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Whittey, J Steinberg, W Leica Microsyst Inc Oakdale CA 95361 USA

ISBN: (纸本)0819454370

Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. the LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270 DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. the increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. this paper details recent measurement results of various feature types on different substrate types using UV transmitted light.

关键词： Photomasks Ultraviolet radiation Critical dimension metrology Deep ultraviolet Microsystems Etching Manufacturing Inspection integrated circuits Optical testing

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Development of an algorithm for monitoring of pattern fidelity on photomasks for 0.2μm technology and beyond based on light optical CD metrology tools

Development of an algorithm for monitoring of pattern fideli...

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hay, B Walden, L Ziegler, W Siemens AG Semicond Grp Mask Shop Munich D-8000 Munich Germany

ISBN: (纸本)0819431397

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value (CD-offtarget) and their linewidth variation (CD-uniformity) is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. the size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure (e.g. implementing of test patterns on critical layers) needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomasks by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source (i-line). the i-line illumination allows to resolve features down to 0.2 mu m size with good repeatability.

关键词： Photolithography

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Study of removal process for buffer layer on multilayer of EUVL mask

Study of removal process for buffer layer on multilayer of E...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Hoshino, E Ogawa, T Takahashi, M Hoko, H Yamanashi, H Hirano, N Chiba, A Lee, BT Ito, M Okazaki, S NTT Telecommun Energy Labs Atsugi Res Ctr Assoc Super Adv Elect Technol Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)0819440396

To obtain a stable pattern profile for the SiO2 buffer layer of an EUVL (Extreme Ultraviolet Lithography) mask, the process latitude available under actual manufacturing conditions was examined by using a conventional spin wet etcher and trying to make the etching depth as uniform as possible. Generally, wet etching uniformity depends on the sequence of the paddling and swing of the etchant nozzle. A uniformity of 1.5%, which meets manufacturing requirements, was found to be obtainable with a special nozzle. this report details a process scheme for removing the buffer layer on the multilayer of an EUVL mask, and presents a method of inspecting the buffer layer along with some simulation results on the printability of residues near the pattern edge.

关键词： masks

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