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检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是71-80 订阅

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Effect of electrostatic chucking on EUVL mask flatness

Effect of electrostatic chucking on EUVL mask flatness

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Mikkelson, A Engelstad, R Lovell, E Aschke, L Rüggeberg, F Sobel, F Computat Mech Ctr Madison WI 53706 USA

ISBN: (纸本)0819454370

the International technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. the SEMI EUVL mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. the FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). the flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. the results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

关键词： EUV lithography electrostatic chucking finite element analysis mask flatness

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the compact excimer laser - light source for optical (mask) inspection systems

The compact excimer laser - light source for optical (mask) ...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819440396

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 nm and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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First results from a new 248 nm CD measurement system for future mask and reticle generation

First results from a new 248 nm CD measurement system for fu...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Schlüter, G Scheuring, G Helbing, J Lehnigk, S Brück, HJ Leica Microsyst Wetzlar GmbH D-35530 Wetzlar Germany

ISBN: (纸本)0819440396

To keep pace with continuously shrinking design rules for masks and reticles a new 248 nm CD measurement system has been developed. the step to a shorter illumination wavelength leads to a better optical resolution power resulting in an improved CD linearity compared to systems using white light or I-line illumination for imaging. An overview of the system configuration is presented and first results of the improved optical performance as well as CD linearity and CD repeatability data are shown.

关键词： Deep ultraviolet Imaging systems Critical dimension metrology Reticles Inspection Optical resolution Cameras Ultraviolet radiation Image resolution Microscopes

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Measurement results on after etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system

Measurement results on after etch resist coated features on ...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Whittey, J Steinberg, W Leica Microsyst Inc Oakdale CA 95361 USA

ISBN: (纸本)0819454370

Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. the LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270 DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. the increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. this paper details recent measurement results of various feature types on different substrate types using UV transmitted light.

关键词： Photomasks Ultraviolet radiation Critical dimension metrology Deep ultraviolet Microsystems Etching Manufacturing Inspection integrated circuits Optical testing

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Improvement of temperature uniformity during prebake process in mask blank production

Improvement of temperature uniformity during prebake process...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Beier, B Schubert, F Buttgereit, U Bensberg, A Schott ML GmBH D-98617 Meiningen Germany

ISBN: (纸本)0819440396

the development in microlithography is focused on realization of feature sizes below 0.18 micrometers . this requires the reduction of defect size and density as well as the enhancement of CD performance. In blank production the CD uniformity is mainly influenced by resist thickness uniformity and temperature uniformity during prebake. this poster evaluates the impact of prebake process on CD performance. Best CD values are 10 nm range presently. Looking on the bake process of ZEP7000 at 200 degree(s)C a temperature difference of 1 K leads to a CD variation of 3.5 nm up to 7.9 nm. the work investigates the influence of an open and a semi open hotplate configuration on the blank surface temperature distribution during prebake process.

关键词： Critical dimension metrology Convection Infrared cameras Photomasks Semiconducting wafers Silicon Aluminum Cameras Optical lithography Reflection

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Development of an algorithm for monitoring of pattern fidelity on photomasks for 0.2μm technology and beyond based on light optical CD metrology tools

Development of an algorithm for monitoring of pattern fideli...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hay, B Walden, L Ziegler, W Siemens AG Semicond Grp Mask Shop Munich D-8000 Munich Germany

ISBN: (纸本)0819431397

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value (CD-offtarget) and their linewidth variation (CD-uniformity) is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. the size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure (e.g. implementing of test patterns on critical layers) needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomasks by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source (i-line). the i-line illumination allows to resolve features down to 0.2 mu m size with good repeatability.

关键词： Photolithography

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OPC aware mask and wafer metrology

OPC aware mask and wafer metrology

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Maurer, W Wiaux, V Jonckheere, R Philipsen, V Hoffmann, T Verhaegen, S Ronse, K England, J Howard, W KLA Tencor Corp Milpitas CA 95035 USA

ISBN: (纸本)0819445312

Lithography at its limit of resolution is a highly non-linear pattern transfer process. Typically the shapes of printed features deviate considerably from their corresponding features in the layout. this deviation is known as Optical Proximity Effect, and its correction Optical Proximity effect Correction or OPC. Although many other so-called optical enhancement technologies are applied to cope with the issues of lithography at its limit of resolution, almost none of these can re-store the linearity of the pattern transfer. Hence fully functional OPC has become a very basic requirement for current and future lithography processes. In general, proximity effects are two-dimensional (2d) effects. thus any measurement of proximity effects or any characterization of the effectiveness of OPC has to be two-dimensional. As OPC modifies shapes in the data for mask writing in a way to compensate for the expected proximity effects of the following processing steps, parameters describing the particular OPC-mask quality is a major concern. One-dimensional mask specifications, such as linewidth mean-to-target and uniformity, pattern placement, and maximum size of a tolerable defect, are not sufficient anymore to completely describe the functionality of a given mask for OPC. Two-dimensional mask specifications need to be evaluated. We present in this paper a basic concept for 2d metrology. Examples for 2d measurements to assess the effectiveness of OPC are given by the application of an SEM Image Analysis tool to an advanced 130nm process.

关键词： optical lithography SEM metrology two-dimensional metrology mask metrology OPC

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Feature proximity errors on mask: Assessment results of commercially obtained reticles

Feature proximity errors on mask: Assessment results of comm...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)

ISBN: (纸本)0819450189

the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as much a strong requirement for a good reticle quality, in view of the mask-Error-Enhancement-Factor (MEEF), which describes how the deviation of an actual feature from its nominal size is magnified onto the wafer. the present paper will discuss the results obtained from a mask linearity study, in which the simultaneous feature size control of different feature types and tone (lines, spaces, dots, contacts) is assessed for varying nominal feature size and proximity (isolated vs. equal lines and spaces), using a reticle CD-SEM. Today mask shops have a range of mask writers available, i.e., 10kV raster scan gaussian beam e-beam tools, laser based optical tools and 50kV vector scan variable shaped e-beam systems. the tool used leaves a so-called "finger print" on the reticle, as a varying linearity behavior. It will be shown that the 50kV writers are superior in terms of mask linearity, as can be expected. Yet, the patterning process used (especially the resist and etching of the patterning layer) is as important. In addition, the mask shop may have compensated for etch bias and for known proximity effects, by tweaking the mask data. the paper will show and discuss the results of masks obtained from over 15 different sources (varying mask shop, tool used and process used), in an anonymous way, as an impression of what is presently available on the market. the results are discussed against the mask requirements table in the ITRS2001.

关键词： 4X reticles CD metrology 2D quality proximity effects 193nm lithography

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A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance

A system to improve the understanding of collected logistic ...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-factor, line-speed, WIP, etc. To improve the line flow, we set up rules for optimising batching at operations and forbid batching between operations, we defined maximum and minimum WIP at the operations, scheduled urgency of the different lots and built rules for bottleneck management. Also we restricted the number of "hot lots". By migrating to the modem MES (manufacturing execution system) MaTISSe, which manages the shopfloor control, and a reporting database, we are able to eliminate the time deviations within our data, caused by data-extraction for different reports at different moments. this gives us a better understanding of our fixed bottleneck and a faster recognition of the temporarily bottlenecks caused by missing availability of machines or men. In this paper we describe the features and advantages of our new MES, as well as the migration process. After approx. 6 months we already achieved considerable benefits. Our plan is to extend decision support within the MES, to help both managers and operators to make the right decisions. the project behind this paper reaped major benefits described here and we are looking forward to further challenges and successes.

关键词： mask house bottleneck management cycle time flow-factor MES

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Major improvements in mask CD metrology: Enhanced performance on attenuated Phase Shift masks, corner rounding measurements, and improved measurement automation

Major improvements in mask CD metrology: Enhanced performanc...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Schlueter, Gerhard Scheuring, Gerd Falk, Guenther Brueck, Hans-Juergen Schaetz, thomas Lehnigk, Sigrid Leica Microsystems Wetzlar GmbH Wetzlar Germany

With continuously shrinking design rules enhanced techniques are required in mask manufacture which require more sophisticated procedures for their characterization. As Phase Shift masks (PSM) are of growing importance a new CD algorithm had to be developed to achieve the same or even higher level of CD accuracy and repeatability as on chrome masks. Major improvements in measurement performance on attenuated PSM have been achieved resulting from improving the PSM CD algorithm based on the experiences reported earlier. With shrinking feature sizes and masks layouts with denser patterns the quantification of corner rounding effects on contacts and line ends is of growing importance. Based on the algorithm developed for the effect of corner rounding on line end shortening a measurement procedure has been developed for contact holes. Measurement results will been shown. To further improve CD measurement automation and to enable easy measurement job modifications a highly flexible device has been developed to import measurement parameters into a macro template.

关键词： masks

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