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20th european conference on mask technology for integrated circuits and microcomponents

作者： Plontke, R Bettin, L Beyer, D Butschke, J Irmscher, M Koepernik, C Leibold, B Vix, A Voehringer, P Leica Microsyst Lithog Jena Germany

ISBN: (纸本)0819454370

the aim is to apply e-beam lithography for second level imaging of Alternating Phase Shift masks (altPSM) in the 65nm node and below. Difficulties due to charging effects arise when exposing areas where the chromium absorber has been cleared away. In order to achieve correct pattern placement, the commercial water-soluble conductive ESPACER 3002 top coat from Showa Denka is applied in combination with chemically amplified resist of type FEP171. the paper describes the method and algorithm to test the efficacy of the material and the technological steps taken to avoid or reduce charge effects. the obtained overlay accuracy proves the ESPACER/FEP171 combination a promising approach for future altPSM manufacturing.

关键词： alternating phase shift mask second level imaging charging electron beam exposure chemically amplified resist

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Establishment of production process and assurance method for alternating phase shift masks

Establishment of production process and assurance method for...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Murai, S Koizumi, Y Kamibayashi, T Saitou, H Hoga, M Morikawa, Y Miyashita, H Dai Nippon Printing Co Ltd Semiconductor Components Operat Saitama 3568507 Japan

ISBN: (纸本)0819440396

Alternating phase shift masks (AltPSMs) are effective in seducing MEF. However, AltPSMs have been used in device development, not in production, because phase-defect assurance has not been sufficient. An assurance method for 180- and 150-nm rule AltPSMs was established by the use of both MD-2000 and KLA/STARlight. We have started production of defect-free AltPSMs with quartz etched shifters and single trench structure s by a two-step quartz etching process, which has an advantage of low phase-defect density.

关键词： alternating phase shift mask phase-defect detection quartz etching process AIMS simulation

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First results from a new 248 nm CD measurement system for future mask and reticle generation

First results from a new 248 nm CD measurement system for fu...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Schlüter, G Scheuring, G Helbing, J Lehnigk, S Brück, HJ Leica Microsyst Wetzlar GmbH D-35530 Wetzlar Germany

ISBN: (纸本)0819440396

To keep pace with continuously shrinking design rules for masks and reticles a new 248 nm CD measurement system has been developed. the step to a shorter illumination wavelength leads to a better optical resolution power resulting in an improved CD linearity compared to systems using white light or I-line illumination for imaging. An overview of the system configuration is presented and first results of the improved optical performance as well as CD linearity and CD repeatability data are shown.

关键词： Deep ultraviolet Imaging systems Critical dimension metrology Reticles Inspection Optical resolution Cameras Ultraviolet radiation Image resolution Microscopes

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A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance

A system to improve the understanding of collected logistic ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-factor, line-speed, WIP, etc. To improve the line flow, we set up rules for optimising batching at operations and forbid batching between operations, we defined maximum and minimum WIP at the operations, scheduled urgency of the different lots and built rules for bottleneck management. Also we restricted the number of "hot lots". By migrating to the modem MES (manufacturing execution system) MaTISSe, which manages the shopfloor control, and a reporting database, we are able to eliminate the time deviations within our data, caused by data-extraction for different reports at different moments. this gives us a better understanding of our fixed bottleneck and a faster recognition of the temporarily bottlenecks caused by missing availability of machines or men. In this paper we describe the features and advantages of our new MES, as well as the migration process. After approx. 6 months we already achieved considerable benefits. Our plan is to extend decision support within the MES, to help both managers and operators to make the right decisions. the project behind this paper reaped major benefits described here and we are looking forward to further challenges and successes.

关键词： mask house bottleneck management cycle time flow-factor MES

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Improvement of temperature uniformity during prebake process in mask blank production

Improvement of temperature uniformity during prebake process...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Beier, B Schubert, F Buttgereit, U Bensberg, A Schott ML GmBH D-98617 Meiningen Germany

ISBN: (纸本)0819440396

the development in microlithography is focused on realization of feature sizes below 0.18 micrometers . this requires the reduction of defect size and density as well as the enhancement of CD performance. In blank production the CD uniformity is mainly influenced by resist thickness uniformity and temperature uniformity during prebake. this poster evaluates the impact of prebake process on CD performance. Best CD values are 10 nm range presently. Looking on the bake process of ZEP7000 at 200 degree(s)C a temperature difference of 1 K leads to a CD variation of 3.5 nm up to 7.9 nm. the work investigates the influence of an open and a semi open hotplate configuration on the blank surface temperature distribution during prebake process.

关键词： Critical dimension metrology Convection Infrared cameras Photomasks Semiconducting wafers Silicon Aluminum Cameras Optical lithography Reflection

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Production challenges of making an EUV mask blank

Production challenges of making an EUV mask blank

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Aschke, L Becker, H Friemel, F Leutbecher, T Olschewski, N Renno, M Rüggeberg, F Schiffler, M Schmidt, F Sobel, F Walter, K Hess, G Lenzen, F Knapp, K Schott Lithotec AG D-98617 Meiningen Germany

ISBN: (纸本)0819454370

mask Blanks for EUV Lithography require a lot of new properties and features compared to standard COG blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. this papers introduces in the special features of Low thermal Expansion Materials (LTEM), their manufacturing and the special metrology for the Coefficient of thermal Expansion (CTE). We will look into some details of polishing methods for much better flatness of the substrates. the process and the metrology of low defect EUV multilayer coatings will be elucidated and some aspects of this will be explained in detail. In addition we will present new results from no-chrome alternative absorber materials.

关键词： Extreme ultraviolet Photomasks Multilayers Extreme ultraviolet lithography Zerodur Reflectivity Polishing Glasses Surface finishing Temperature metrology

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OPC aware mask and wafer metrology

OPC aware mask and wafer metrology

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Maurer, W Wiaux, V Jonckheere, R Philipsen, V Hoffmann, T Verhaegen, S Ronse, K England, J Howard, W KLA Tencor Corp Milpitas CA 95035 USA

ISBN: (纸本)0819445312

Lithography at its limit of resolution is a highly non-linear pattern transfer process. Typically the shapes of printed features deviate considerably from their corresponding features in the layout. this deviation is known as Optical Proximity Effect, and its correction Optical Proximity effect Correction or OPC. Although many other so-called optical enhancement technologies are applied to cope with the issues of lithography at its limit of resolution, almost none of these can re-store the linearity of the pattern transfer. Hence fully functional OPC has become a very basic requirement for current and future lithography processes. In general, proximity effects are two-dimensional (2d) effects. thus any measurement of proximity effects or any characterization of the effectiveness of OPC has to be two-dimensional. As OPC modifies shapes in the data for mask writing in a way to compensate for the expected proximity effects of the following processing steps, parameters describing the particular OPC-mask quality is a major concern. One-dimensional mask specifications, such as linewidth mean-to-target and uniformity, pattern placement, and maximum size of a tolerable defect, are not sufficient anymore to completely describe the functionality of a given mask for OPC. Two-dimensional mask specifications need to be evaluated. We present in this paper a basic concept for 2d metrology. Examples for 2d measurements to assess the effectiveness of OPC are given by the application of an SEM Image Analysis tool to an advanced 130nm process.

关键词： optical lithography SEM metrology two-dimensional metrology mask metrology OPC

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PN and SOI wafer flow process for stencil mask fabrication

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 20-29页

作者： Butschke, J. Ehrmann, A. Haugeneder, E. Irmscher, M. Kaesmaier, R. Kragler, K. Letzkus, F. Loeschner, H. Mathuni, J. Rangelow, I.W. Reuter, C. Shi, F. Springer, R. Inst fuer Mikroelektronik Stuttgart Stuttgart Germany

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6 inches Si base wafers with 3 μm membrane thickness and a membrane diameter between 120 mm and 126 mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Lithography

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Compensation of long-range process effects on photomasks by design data correction

Compensation of long-range process effects on photomasks by ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to avoid big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50 - 70 % depending on pattern details. the data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment. For advanced photomasks the mask data preparation times have become a major issue. To tackle this fracture time increase distributed processing has been introduced into the photomask design flow. We also report first results on the fracture time reduction achievable by distributing the data correction onto a Linux cluster.

关键词： mask process correction dry etch loading pattern density CATS

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Feature proximity errors on mask: Assessment results of commercially obtained reticles

Feature proximity errors on mask: Assessment results of comm...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)

ISBN: (纸本)0819450189

the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as much a strong requirement for a good reticle quality, in view of the mask-Error-Enhancement-Factor (MEEF), which describes how the deviation of an actual feature from its nominal size is magnified onto the wafer. the present paper will discuss the results obtained from a mask linearity study, in which the simultaneous feature size control of different feature types and tone (lines, spaces, dots, contacts) is assessed for varying nominal feature size and proximity (isolated vs. equal lines and spaces), using a reticle CD-SEM. Today mask shops have a range of mask writers available, i.e., 10kV raster scan gaussian beam e-beam tools, laser based optical tools and 50kV vector scan variable shaped e-beam systems. the tool used leaves a so-called "finger print" on the reticle, as a varying linearity behavior. It will be shown that the 50kV writers are superior in terms of mask linearity, as can be expected. Yet, the patterning process used (especially the resist and etching of the patterning layer) is as important. In addition, the mask shop may have compensated for etch bias and for known proximity effects, by tweaking the mask data. the paper will show and discuss the results of masks obtained from over 15 different sources (varying mask shop, tool used and process used), in an anonymous way, as an impression of what is presently available on the market. the results are discussed against the mask requirements table in the ITRS2001.

关键词： 4X reticles CD metrology 2D quality proximity effects 193nm lithography

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