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Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

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Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

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A printability study for phase-shift masks at 193nm lithography

A printability study for phase-shift masks at 193nm lithogra...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819450189

this paper reports on the mask quality printability for 6% attenuated phase-shift masks (PSM) using 193nm lithography. It is part of a systematic assessment of the impact of mask defects on the printed image. Our previous work [1-3] focused on defect printability of binary masks. Furthermore, an attenuated PSM is also used to print contact holes (CH), as it improves the process latitudes. In this paper we focus on the 2D quality of the CH on the mask. Due to mask-writer effects, the ideally square CH becomes rounded on the mask. the 2D mask quality determines the printed image, together with the exposure conditions and wafer stack. In a first section the influence of programmed mask defects on a 6% attenuated PSM is evaluated. the 100nm gatestyle design is based on the Defect Sensitivity Monitor (DSM of ASML maskTools). We consider two different degrees of optical proximity correction (OPC), i.e., no OPC, and both serifs and scatter bars (SB). the mask contains programmed soft defects made from resist dots to mimic opaque defects such as bumps and spots. the wafers are exposed on an ASML PAS5500/950 scanner with 193nm conventional illumination (0.7sigma) using a numerical aperture (NA) of 0.63. the printing results are compared to aerial image simulations taking into account the actual mask contours. A comparison table, which classifies the defect based on the induced linewidth deviation, is drawn from it. the second section deals with 2D quality of CH on a 6% attenuated PSM. the design contains CH of various sizes and in various pitches. the CH are provided with serifs on the corners, thereby varying size and placement. these serifs are intended as a correction to the design to incorporate possible mask-writer-generated rounding of the ideally square CH. the purpose of this study is to evaluate the influence of such serifs in the design towards wafer printing. the wafers are exposed on an ASML PAS5500/1100 scanner with 193nm conventional illumination (0.6sigma) usi

关键词： defect printability mask 2D quality 193nm lithography attenuated phase-shift mask

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Monitoring strategy to match the advanced fabs

Monitoring strategy to match the advanced fabs

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Ackmann, PW Adv Mask Technol Ctr D-013330 Dresden Germany

ISBN: (纸本)0819454370

the reduction in feature size below the exposure wavelength, the requirement for high yields, the expectation for consistent cycletime and shipment to mix, all mean that the reticle industry must be like advanced wafer fabrication centers. Due to the lower output of write tools versus steppers, and the fact that a reticle is a lot of one instead of 25 or 50 wafers as well as the need to match ship date to Fab ramp, the reticle line monitoring strategy must be optimized for small sample size. the use of tool time and alternative inspection strategies can lead to the early detection of problems. Because every reticle is a customer specific design, the monitoring strategy takes on a new look compared to the Fab. We have organized the AMTC to resemble a wafer fab. We have a dedicated Integration group that works with the customers and technologists, to monitor the needs of the customers and then drive the development programs that improve reticle capability. We have a dedicated yield team to identify and classify the yield loss mechanisms and define probable causes. the teams then work with the Process owners to fix the source of yield loss and track the corrective actions. All sources of variations must be modeled and then sources of errors reduced to levels below the tool specification. the manufacturing organization has all the process and tool experts to focus on Pilot Line and Development tasks to meet the advance needs of our customers. With the organization in place we can then develop the methods based on Reticle and Fab manufacturing to best control the line and provide development with manufacturing cycle times.

关键词： Photomasks Reticles Manufacturing Etching Semiconducting wafers Optical proximity correction Inspection Critical dimension metrology Process control Control systems

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Major improvements in mask CD metrology: Enhanced performance on attenuated Phase Shift masks, corner rounding measurements, and improved measurement automation

Major improvements in mask CD metrology: Enhanced performanc...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schlueter, Gerhard Scheuring, Gerd Falk, Guenther Brueck, Hans-Juergen Schaetz, thomas Lehnigk, Sigrid Leica Microsystems Wetzlar GmbH Wetzlar Germany

With continuously shrinking design rules enhanced techniques are required in mask manufacture which require more sophisticated procedures for their characterization. As Phase Shift masks (PSM) are of growing importance a new CD algorithm had to be developed to achieve the same or even higher level of CD accuracy and repeatability as on chrome masks. Major improvements in measurement performance on attenuated PSM have been achieved resulting from improving the PSM CD algorithm based on the experiences reported earlier. With shrinking feature sizes and masks layouts with denser patterns the quantification of corner rounding effects on contacts and line ends is of growing importance. Based on the algorithm developed for the effect of corner rounding on line end shortening a measurement procedure has been developed for contact holes. Measurement results will been shown. To further improve CD measurement automation and to enable easy measurement job modifications a highly flexible device has been developed to import measurement parameters into a macro template.

关键词： masks

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Determining the transfer function of a mask fabrication process

Determining the transfer function of a mask fabrication proc...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Leunissen, LHA Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819454370

A mask making process is the result of data preparation (e.g., bias), patterning and etch. the effect of these steps can be simulated starting from a circuit design. the purpose of this paper is to determine the transfer function for a production flow of a mask, describing the transition from the design to the finished reticle. the simulation results will be compared with actual measurements. 1D measurements of a mask, as shown for example in Ref. [1], provide a lot of useful information. the fingerprint that a writing tool leaves on the experimental result actually makes it possible to determine if the reticle is produced with an e-beam writer or an optical laser tool. From the deviations from the nominal value the "effective" spot size of the laser tool can be determined. In case an e-beam writer is used, the performance of the e-beam proximity correction in use becomes apparent. the mean-to-target offset can be resolved if no data biasing is performed. From SEM pictures of the reticle the 2D corner rounding effects can be determined from the combined influence of the spot size, scattering (in case of an e-beam writer) and data biasing. Global sizing can be resolved from 2D measurements. If the pattern bias is performed for each individual feature it is included in the rounding. Sufficient data about sizing, etch bias and spot size can be obtained if SEM pictures are taken from several critical sites on the reticle. For example, dense lines/spaces or contacts/dots constitute the minimum objects to be printed. Recent reticles ordered at IMEC include a monitor structure. Among other features, this performance monitor contains dots and contact holes with sizes between 90 nm and 250 nm with additional serifs at the corners. the serifs have sizes of 1040 nm in 10 nm steps. All feature sizes are specified at 1x unless otherwise indicated. they are extending multiples of 10 nm from the corner position. In our work we assessed the integrity of varying serifs on dots and c

关键词： reticle quality printability mask transfer function reticle 2D quality proximity effect

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EUV mask development: Material and process

EUV mask development: Material and process

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Rau, J Wendt, H Mathuni, J Stepper, C Ehrmann, A Kamm, FM Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Extreme ultraviolet lithography (EUVL) is one of the most promising technologies for wafer feature sizes of below 50nm. the illumination wavelength will be approximately 13.5nm and consequently no transmissive optics can be used for this soft X-ray light. For several years intensive research work has been performed in different programs mainly through EUV-LLC, ASET and PREUVE. this has resulted in providing solutions for the most critical tasks of EUVL - powerful sources, defect free mask blanks and environmentally stable optics of high reflectivity. During the development with EUV-LLC an engineering test stand for illumination has been built which will be a powerful tool for the development of EUVL masks. We have studied the patterning of a EUVL mask for process development and repair tests. the material was a standard Cr absorber (as used in production) and a SiO2 buffer layer. the process investigation was focused on the dry etch stop behaviour of the etch processes and also on cleaning issues. the mask concept favoured today for EUVL masks is very similar to the masks used in production;consequently most work is performed on Cr as the absorber material and SiO2 as the buffer material. From results presented in recent years we can surmise that Cr and TaN are at present the most promising candidates as absorber materials [1,2]. However it is also known [3] that it will be very difficult to develop an etch-bias free process for Cr. In this paper we shall present our results detailing the etch properties of Ta and TaN as an absorber material. TaN is shown to be a promising absorber material. In addition, the impact of mask properties on placement and bow has been investigated with finite element calculations.

关键词： Etching Photomasks Extreme ultraviolet lithography Quartz Signal processing Silicon Tantalum Inspection Chromium Extreme ultraviolet

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Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool

Fully automated CD -: Metrology and mask inspection in a mas...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany

ISBN: (纸本)0819450189

Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks and their tightening specifications. Hence, this calls for the capability of fully automated CD measurements on a large number of dense and isolated lines and 2-dimensional features under production conditions. In this paper we report on such a highly automated measurement system for CD measurements from MueTec. Either an ASCII software interface or a specially developed software interface to connect the MueTec with the CATS(TM) mask data fracturing software handles the large amount of co-ordinates and other information like design images from the measurement sites and their surrounding, which are necessary for fully automated CD measurements. Because the latter is the standard in mask-making and data-formats, this level of automation guarantees a good industrial integration of the MueTec system. Fully automated and reliable CD measurements are based on very stable tool hardware and especially on a positioning stage with best possible positioning accuracy (range better 0.5 mum), significantly improved possibilities of software controlled positioning and an automated job set up and execution. the time gain in relation to existing measurement programs in the extent of supply has turned out to be dramatically large. the User Interfaces and their applications will be described.

关键词： Photomasks Critical dimension metrology Reticles Inspection Deep ultraviolet Metrology Binary data Objectives Cameras Environmental sensing

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Lithography and CD performance of advanced MEBES mask pattern generators

Lithography and CD performance of advanced MEBES mask patter...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, J.M. Cole, D. Pearce-Percy, H. Phillips, W. Lu, M. Weaver, S. Alexander, D. Coleman, T. Sauer, C. Abboud, F. Etec Systems Inc Hayward United States

As optical lithography is extended to the 130 nm generation and beyond, demanding requirements are placed on mask pattern generators to produce quartz substrate masks. this paper reports on the lithography and critical dimension (CD) performance of the MEBES 5500 mask pattern generator. Compared to previous MEBES tools, this system employs a new high-dose electron gun and column design. We summarize experiments relating lithographic quality to increased dose and the effects of spot size on lithography. Methods to reduce beam-induced pattern placement errors are reviewed. A new graybeam writing strategy, Multipass Gray-II (MPG-II), is described in detail. this strategy creates eight dosed gray levels and provides increased writing throughput (up to 8× compared to single-pass printing) without loss of lithographic quality. these experiments are performed with ZEP 7000 resist and dry etch process;improvements in CD control have been achieved by optimizing the process. A consequence of the improvement in CD control and throughput is improved productivity in generating 180 nm devices.

关键词： Photolithography

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A mask industry assessment: 2002

A mask industry assessment: 2002

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Kimmel, Kurt R. International SEMATECH 2706 Montopolis Drive Austin TX 78741-6499 United States

Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. the survey was designed with the input of member company mask technologists, merchant mask suppliers, and industry equipment makers. this assessment can be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of our critical mask industry. It should serve as a valuable reference to identify strengths and opportunities and to guide investments on critical-path issues. Questions are grouped into five categories: General Business Profile Information;Data Processing;Yields and Yield loss Mechanisms;Delivery Time;and Returns and Services. Within each category are a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

关键词： masks

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