检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

92 篇 会议
5 篇 期刊文献

馆藏范围

97 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

93 篇 工学
- 78 篇 电气工程
- 36 篇 机械工程
- 24 篇 电子科学与技术（可...
- 17 篇 计算机科学与技术...
- 9 篇 软件工程
- 7 篇 测绘科学与技术
- 6 篇 光学工程
- 5 篇 化学工程与技术
- 4 篇 材料科学与工程（可...
- 4 篇 轻工技术与工程
- 1 篇 仪器科学与技术
- 1 篇 信息与通信工程
- 1 篇 航空宇航科学与技...
65 篇 理学
- 64 篇 物理学
- 5 篇 数学
- 4 篇 化学
- 1 篇 地质学
25 篇 医学
- 25 篇 临床医学
6 篇 管理学
- 6 篇 管理科学与工程(可...
- 2 篇 工商管理
2 篇 法学
- 2 篇 社会学
1 篇 经济学
- 1 篇 应用经济学

主题

31 篇 photomasks
15 篇 masks
12 篇 lithography
11 篇 etching
11 篇 semiconducting w...
11 篇 critical dimensi...
10 篇 manufacturing
10 篇 mask making
10 篇 inspection
8 篇 reticles
6 篇 optical proximit...
6 篇 silicon
6 篇 photolithography
6 篇 quartz
5 篇 glasses
5 篇 extreme ultravio...
5 篇 scanning electro...
5 篇 metrology
5 篇 optical lithogra...
4 篇 mask

机构

3 篇 infineon technol...
2 篇 infineon technol...
2 篇 tuilaser ag d-82...
2 篇 fraunhofer ims d...
2 篇 imec vzw b-3001 ...
2 篇 infineon technol...
2 篇 inst mikrotech m...
1 篇 dai nippon print...
1 篇 infineon technol...
1 篇 dupont photomask...
1 篇 rave llc
1 篇 t nova deutsch t...
1 篇 ltd manchester u...
1 篇 univ gesamthsch ...
1 篇 siemens ag munic...
1 篇 etec systems inc...
1 篇 imec vzw
1 篇 electroopt co ho...
1 篇 dupont photomask...
1 篇 computat mech ct...

作者

5 篇 ehrmann a
5 篇 butschke j
4 篇 mathuni j
4 篇 letzkus f
4 篇 irmscher m
4 篇 jonckheere r
4 篇 kamm fm
4 篇 philipsen v
3 篇 scheer hc
3 篇 rosenbusch a
3 篇 springer r
3 篇 schätz t
3 篇 rau j
3 篇 brück hj
3 篇 struck t
3 篇 aschke l
2 篇 haugeneder e.
2 篇 rüggeberg f
2 篇 ehrmann a.
2 篇 springer r.

语言

97 篇 英文

检索条件"任意字段=16th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 97 条记录，以下是81-90 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Compensation of long-range process effects on photomasks by design data correction

Compensation of long-range process effects on photomasks by ...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to avoid big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50 - 70 % depending on pattern details. the data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment. For advanced photomasks the mask data preparation times have become a major issue. To tackle this fracture time increase distributed processing has been introduced into the photomask design flow. We also report first results on the fracture time reduction achievable by distributing the data correction onto a Linux cluster.

关键词： mask process correction dry etch loading pattern density CATS

来源：评论

学校读者我要写书评

暂无评论

Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

来源：评论

学校读者我要写书评

暂无评论

Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

来源：评论

学校读者我要写书评

暂无评论

Lithography and CD performance of advanced MEBES mask pattern generators

Lithography and CD performance of advanced MEBES mask patter...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, J.M. Cole, D. Pearce-Percy, H. Phillips, W. Lu, M. Weaver, S. Alexander, D. Coleman, T. Sauer, C. Abboud, F. Etec Systems Inc Hayward United States

As optical lithography is extended to the 130 nm generation and beyond, demanding requirements are placed on mask pattern generators to produce quartz substrate masks. this paper reports on the lithography and critical dimension (CD) performance of the MEBES 5500 mask pattern generator. Compared to previous MEBES tools, this system employs a new high-dose electron gun and column design. We summarize experiments relating lithographic quality to increased dose and the effects of spot size on lithography. Methods to reduce beam-induced pattern placement errors are reviewed. A new graybeam writing strategy, Multipass Gray-II (MPG-II), is described in detail. this strategy creates eight dosed gray levels and provides increased writing throughput (up to 8× compared to single-pass printing) without loss of lithographic quality. these experiments are performed with ZEP 7000 resist and dry etch process;improvements in CD control have been achieved by optimizing the process. A consequence of the improvement in CD control and throughput is improved productivity in generating 180 nm devices.

关键词： Photolithography

来源：评论

学校读者我要写书评

暂无评论

Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool

Fully automated CD -: Metrology and mask inspection in a mas...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany

ISBN: (纸本)0819450189

Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks and their tightening specifications. Hence, this calls for the capability of fully automated CD measurements on a large number of dense and isolated lines and 2-dimensional features under production conditions. In this paper we report on such a highly automated measurement system for CD measurements from MueTec. Either an ASCII software interface or a specially developed software interface to connect the MueTec with the CATS(TM) mask data fracturing software handles the large amount of co-ordinates and other information like design images from the measurement sites and their surrounding, which are necessary for fully automated CD measurements. Because the latter is the standard in mask-making and data-formats, this level of automation guarantees a good industrial integration of the MueTec system. Fully automated and reliable CD measurements are based on very stable tool hardware and especially on a positioning stage with best possible positioning accuracy (range better 0.5 mum), significantly improved possibilities of software controlled positioning and an automated job set up and execution. the time gain in relation to existing measurement programs in the extent of supply has turned out to be dramatically large. the User Interfaces and their applications will be described.

关键词： Photomasks Critical dimension metrology Reticles Inspection Deep ultraviolet Metrology Binary data Objectives Cameras Environmental sensing

来源：评论

学校读者我要写书评

暂无评论

A printability study for phase-shift masks at 193nm lithography

A printability study for phase-shift masks at 193nm lithogra...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819450189

this paper reports on the mask quality printability for 6% attenuated phase-shift masks (PSM) using 193nm lithography. It is part of a systematic assessment of the impact of mask defects on the printed image. Our previous work [1-3] focused on defect printability of binary masks. Furthermore, an attenuated PSM is also used to print contact holes (CH), as it improves the process latitudes. In this paper we focus on the 2D quality of the CH on the mask. Due to mask-writer effects, the ideally square CH becomes rounded on the mask. the 2D mask quality determines the printed image, together with the exposure conditions and wafer stack. In a first section the influence of programmed mask defects on a 6% attenuated PSM is evaluated. the 100nm gatestyle design is based on the Defect Sensitivity Monitor (DSM of ASML maskTools). We consider two different degrees of optical proximity correction (OPC), i.e., no OPC, and both serifs and scatter bars (SB). the mask contains programmed soft defects made from resist dots to mimic opaque defects such as bumps and spots. the wafers are exposed on an ASML PAS5500/950 scanner with 193nm conventional illumination (0.7sigma) using a numerical aperture (NA) of 0.63. the printing results are compared to aerial image simulations taking into account the actual mask contours. A comparison table, which classifies the defect based on the induced linewidth deviation, is drawn from it. the second section deals with 2D quality of CH on a 6% attenuated PSM. the design contains CH of various sizes and in various pitches. the CH are provided with serifs on the corners, thereby varying size and placement. these serifs are intended as a correction to the design to incorporate possible mask-writer-generated rounding of the ideally square CH. the purpose of this study is to evaluate the influence of such serifs in the design towards wafer printing. the wafers are exposed on an ASML PAS5500/1100 scanner with 193nm conventional illumination (0.6sigma) usi

关键词： defect printability mask 2D quality 193nm lithography attenuated phase-shift mask

来源：评论

学校读者我要写书评

暂无评论

Monitoring strategy to match the advanced fabs

Monitoring strategy to match the advanced fabs

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Ackmann, PW Adv Mask Technol Ctr D-013330 Dresden Germany

ISBN: (纸本)0819454370

the reduction in feature size below the exposure wavelength, the requirement for high yields, the expectation for consistent cycletime and shipment to mix, all mean that the reticle industry must be like advanced wafer fabrication centers. Due to the lower output of write tools versus steppers, and the fact that a reticle is a lot of one instead of 25 or 50 wafers as well as the need to match ship date to Fab ramp, the reticle line monitoring strategy must be optimized for small sample size. the use of tool time and alternative inspection strategies can lead to the early detection of problems. Because every reticle is a customer specific design, the monitoring strategy takes on a new look compared to the Fab. We have organized the AMTC to resemble a wafer fab. We have a dedicated Integration group that works with the customers and technologists, to monitor the needs of the customers and then drive the development programs that improve reticle capability. We have a dedicated yield team to identify and classify the yield loss mechanisms and define probable causes. the teams then work with the Process owners to fix the source of yield loss and track the corrective actions. All sources of variations must be modeled and then sources of errors reduced to levels below the tool specification. the manufacturing organization has all the process and tool experts to focus on Pilot Line and Development tasks to meet the advance needs of our customers. With the organization in place we can then develop the methods based on Reticle and Fab manufacturing to best control the line and provide development with manufacturing cycle times.

关键词： Photomasks Reticles Manufacturing Etching Semiconducting wafers Optical proximity correction Inspection Critical dimension metrology Process control Control systems

来源：评论

学校读者我要写书评

暂无评论

Determining the transfer function of a mask fabrication process

Determining the transfer function of a mask fabrication proc...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Leunissen, LHA Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819454370

A mask making process is the result of data preparation (e.g., bias), patterning and etch. the effect of these steps can be simulated starting from a circuit design. the purpose of this paper is to determine the transfer function for a production flow of a mask, describing the transition from the design to the finished reticle. the simulation results will be compared with actual measurements. 1D measurements of a mask, as shown for example in Ref. [1], provide a lot of useful information. the fingerprint that a writing tool leaves on the experimental result actually makes it possible to determine if the reticle is produced with an e-beam writer or an optical laser tool. From the deviations from the nominal value the "effective" spot size of the laser tool can be determined. In case an e-beam writer is used, the performance of the e-beam proximity correction in use becomes apparent. the mean-to-target offset can be resolved if no data biasing is performed. From SEM pictures of the reticle the 2D corner rounding effects can be determined from the combined influence of the spot size, scattering (in case of an e-beam writer) and data biasing. Global sizing can be resolved from 2D measurements. If the pattern bias is performed for each individual feature it is included in the rounding. Sufficient data about sizing, etch bias and spot size can be obtained if SEM pictures are taken from several critical sites on the reticle. For example, dense lines/spaces or contacts/dots constitute the minimum objects to be printed. Recent reticles ordered at IMEC include a monitor structure. Among other features, this performance monitor contains dots and contact holes with sizes between 90 nm and 250 nm with additional serifs at the corners. the serifs have sizes of 1040 nm in 10 nm steps. All feature sizes are specified at 1x unless otherwise indicated. they are extending multiples of 10 nm from the corner position. In our work we assessed the integrity of varying serifs on dots and c

关键词： reticle quality printability mask transfer function reticle 2D quality proximity effect

来源：评论

学校读者我要写书评

暂无评论

EUV mask development: Material and process

EUV mask development: Material and process

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Rau, J Wendt, H Mathuni, J Stepper, C Ehrmann, A Kamm, FM Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Extreme ultraviolet lithography (EUVL) is one of the most promising technologies for wafer feature sizes of below 50nm. the illumination wavelength will be approximately 13.5nm and consequently no transmissive optics can be used for this soft X-ray light. For several years intensive research work has been performed in different programs mainly through EUV-LLC, ASET and PREUVE. this has resulted in providing solutions for the most critical tasks of EUVL - powerful sources, defect free mask blanks and environmentally stable optics of high reflectivity. During the development with EUV-LLC an engineering test stand for illumination has been built which will be a powerful tool for the development of EUVL masks. We have studied the patterning of a EUVL mask for process development and repair tests. the material was a standard Cr absorber (as used in production) and a SiO2 buffer layer. the process investigation was focused on the dry etch stop behaviour of the etch processes and also on cleaning issues. the mask concept favoured today for EUVL masks is very similar to the masks used in production;consequently most work is performed on Cr as the absorber material and SiO2 as the buffer material. From results presented in recent years we can surmise that Cr and TaN are at present the most promising candidates as absorber materials [1,2]. However it is also known [3] that it will be very difficult to develop an etch-bias free process for Cr. In this paper we shall present our results detailing the etch properties of Ta and TaN as an absorber material. TaN is shown to be a promising absorber material. In addition, the impact of mask properties on placement and bow has been investigated with finite element calculations.

关键词： Etching Photomasks Extreme ultraviolet lithography Quartz Signal processing Silicon Tantalum Inspection Chromium Extreme ultraviolet

来源：评论

学校读者我要写书评

暂无评论

Progress in placement control for ion beam stencil mask technology

Progress in placement control for ion beam stencil mask tech...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Kamm, F.-M. Ehrmann, A. Struck, T. Kragler, K. Butschke, J. Letzkus, F. Springer, R. Haugeneder, E. Degen, A. Voigt, J. Kratzenberg, M. Rangelow, I.W. Infineon Technologies AG Munich/Erlangen Germany

A short review of the current status of IPL stencil mask development is presented in this paper. Stencil masks based on 6 Si-wafer have been fabricated with a membrane diameter of 126 mm. With a typical membrane thickness of 3 μm, mechanical stability is a critical issue. the resulting placement errors have been measured using an LMS IPRO measurement tool and have been compared to Finite Element (FE) calculations simulating the fabrication process. Process-induced distortions can be predicted by FE calculations with an accuracy of up to 24 nm 3σ. In addition to large circular membranes, an alternative geometry has been considered. masks with a quadratic membrane area of 60 × 60 mm2 show IPDs of 3σ = 39 nm which are about 4 times smaller than those of large circular membranes. this result agrees well with predictions of FE calculations. In order to protect the Si-mask against ion bombardment, a protective carbon layer is deposited onto the membrane, thus preventing stress changes due to ion implantation. the current status of the carbon deposition process will also be addressed briefly.

关键词： masks

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共10页 << < 1 2 3 4 5 6 7 8 9 10 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：