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检索条件"任意字段=17th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是1-10 订阅

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Proceedings of SPIE: 18th european conference on mask technology for integrated circuits and microcomponents

Proceedings of SPIE: 18th European Conference on Mask Techno...

引用

18th european conference on mask technology for integrated circuits and microcomponents 1998

this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processin... 详细信息

关键词： integrated circuit manufacture

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Proceedings: 19th european conference on mask technology for integrated circuits and microcomponents

Proceedings: 19th European Conference on Mask Technology for...

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19th european conference on mask technology for integrated circuits and microcomponents

this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process aut... 详细信息

关键词： masks

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20th european conference on mask technology for integrated circuits and microcomponents

20th European conference on mask technology for integrated c...

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20th european conference on mask technology for integrated Cirquits and microcomponents

the proceedings contains 26 papers from the 20th european conference on mask technology for integrated circuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication process;towards systematic CD process control for e-beam lithography;optimized processes and absorber-stack materials for EUV masks;investigation of Cr etch chamber seasoning;metrological characterization of new CD photomask standards;dynamic mask defects in hot embossing lithography and predicting microfluidic response during immersion lithography scanning.

关键词： masks

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mask definition by nanoimprint lithography

Mask definition by nanoimprint lithography

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany

ISBN: (纸本)0819440396

mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

关键词： Polymers Nanoimprint lithography Oxygen Photomasks Reactive ion etching Etching Scanning electron microscopy Lithography Plasma Dry etching

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Charged particle beam induced processes and its applicability to mask repair for next generation lithographies

Charged particle beam induced processes and its applicabilit...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany

ISBN: (纸本)0819440396

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. this compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

关键词： Ion beam lithography

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130 nm node mask development

130 nm node mask development

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

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mask manufacturing contribution on 248nm & 193nm lithography performances

Mask manufacturing contribution on 248nm & 193nm lithography...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Barberet, A Fanget, G Richoilley, JC Tissier, M Quere, Y DuPont Photomasks F-13106 Rousset France

ISBN: (纸本)0819440396

In this study, we focus on mask manufacturing contribution on 248nm & 193nm lithography performances. the masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). masks are optimized for 150nm node at wafer scare, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.

关键词： mask manufacturing 248nm-lithography 193nm-lithography linearity AFLV MEEF

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AutoMOPS: B2B and B2C in mask making. mask manufacturing performance and customer satisfaction improvement through better information flow management

AutoMOPS: B2B and B2C in mask making. Mask manufacturing per...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： de Ridder, L Filies, O Rodriguez, B Kuijken, A Nimble NV (Belgium) Infineon Technologies AG (Germany)

ISBN: (纸本)0819440396

through application of modern supply chain concepts in combination with state-of-the-art Information technology, mask manufacturing performance and customer satisfaction can be improved radically the AutoMOPS solution emphasises on the elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and prototype production stages.

关键词： Photomasks Manufacturing mask making Semiconducting wafers Telecommunications Information technology Computer aided design Optical proximity correction Prototyping Standards development

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Application of E-beam chemically amplified resist to devices below 0.18μm node

Application of E-beam chemically amplified resist to devices...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Jeon, CU Kim, CH Choi, SW Han, WS Sohn, JM Samsung Electronics Co. Ltd. (South Korea)

ISBN: (纸本)0819440396

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. the pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist. We elucidated the degree of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal. type resist compared to an acrylate type resist. We have achieved CD uniformity of < 10nm in 3 sigma within 135 X 135 mm(2) field showing a high possibility for CAR process to be applied to the mask production for device generations, beyond 180nm.

关键词： Photomasks mask making Photoresist processing Optical proximity correction Scanning electron microscopy Critical dimension metrology Chemically amplified resists Scattering Vestigial sideband modulation Diffusion

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Investigation of quartz etch rate uniformity for alternating phase shift mask applications utilizing a next generation ICP source

Investigation of quartz etch rate uniformity for alternating...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Strawn, C Constantine, C Plumhoff, J Westerman, R Unaxis USA Inc St Petersburg FL 33716 USA

ISBN: (纸本)0819440396

As critical dimensions and exposure wavelengths approach the physical limitations of optical lithography, the use of newer techniques such as Phase Shift Photomask Technologies become necessary to extend the viability of DUV lithographic tools. Alternating Phase Shift mask technologies are challenging the capabilities of current quartz dry etch processes;as this phase shift technique is achieved by the precise removal of quartz, the need for ever improving phase shift uniformity across the photomask surface requires extremely uniform quartz etch depth. To this end, a Next Generation ICP (Inductively Coupled Plasma) hardware configuration has been adopted. In this article, the quartz etch parameter space of this new ICP source is explored. Finally, process results including, quartz roughness, sidewall profile, and most importantly quartz etch rate uniformity will be presented.

关键词： Etching Quartz Photomasks Phase shifts Plasma Dry etching Electroluminescence Surface roughness Lithography Optical lithography

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