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检索条件"任意字段=17th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是21-30 订阅

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Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool

Inspection of alternating PSM reticles using UV-based 365 nm...

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Rosenbusch, A Har-zvi, M Gottlib, G Etec Syst Inc Appl Mat Co Hayward CA 94545 USA

ISBN: (纸本)0819445312

the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.

关键词： phase shift mask 248 nm AAPSM i-line inspection mask inspection reticle enhancement technique (RET)

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Inspecting alternating phase shift masks by matching stepper conditions

Inspecting alternating phase shift masks by matching stepper...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Hemar, S Rosenbusch, A Etec Syst Mask Business Grp IL-76705 Rehovot Israel

ISBN: (纸本)0819450189

the paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. the inspection methodology used is aerial imaging. Phase effects are taking into account inherently. the main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. the paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation.

关键词： aerial-image based mask inspection AAPSM OPC 193nm technology at-wavelength inspection

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mask availability for next-generation lithography

Mask availability for next-generation lithography

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Lercel, MJ Fisch, E Racette, KC Lawliss, M Williams, CT Kindt, L Huang, C IBM Corp Photron NGL Mask Ctr Competency Essex Jct VT 05452 USA

ISBN: (纸本)0819445312

the Next Generation Lithography (NGL) mask Center of Competency (MCoC) has been developing mask technology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in both the membrane and reflective mask formats. the mask technology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. this information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we disucss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.

关键词： Photomasks Inspection Extreme ultraviolet lithography Lithography X-rays Chromium Etching Image processing Multilayers Reflectivity

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Investigation of Cr etch chamber seasoning

Investigation of Cr etch chamber seasoning

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Nesladek, P Ruhl, G Kristlib, M Adv Mask Technol Ctr Dresden Germany

ISBN: (纸本)0819454370

One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. the increasing demands on high-end masks cause a narrowing of both mask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfil these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.

关键词： Cr plasma etch MTT stability seasoning

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Early mask making during the 1960's in Dresden

Early mask making during the 1960's in Dresden

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunhofer Inst Photon Mikrosyst IPMS Dresden Germany

ISBN: (纸本)0819450189

One of the first european institutes for microelectronics, the Arbeitsstelle fur Molekularelektronik Dresden AME, was founded in 1961 by WERNER HARTMANN. the purpose was to develop processes for fabrication of integrated circuits. Concerning microlithography at first a five-stage mask technique was used since 1965. the artwork original which was called "Vorlage" was cut with a scale of about 200:1. Using a reduction camera the artwork original was reduced about 20 times, to get the reticle known as the "Zwischennegativ". this reticle was then further reduced about 10 times by "step and repeat", using a projection microscope, to get a master mask known as the "Originalschablone" whose scale was then 1: 1. By direct photocopying of the master mask one obtained a working mask which was called the "Arbeitsschablone". Finally, an aligned direct exposure of the working mask on to a wafer created, layer by layer, the micro-pattern of the chip array. Concerning the materials a double layer film was used for the artwork originals, and 2 inch photographic plates were used for the reticles and masks. In this way the first East German bipolar integrated circuits, NOR gates with 8 transistors, were made in Dresden in 1967. this was done with 4 masking levels on 25 mm Si wafers with 1.5 mm chip size and 20 mum minimal figure width (critical dimensions). In the late 1960's some improvements were introduced, particularly the 6-barrel semi-automatic photorepeater, which improved the figure width and gave lower tolerances. the largest chip made in 1969 was a J-K master-slave flipflop, this contained 36 transistors on a chip 1.6 mm x 1.8 mm and was done with 9 masking levels and with 10 mum minimal figure width.

关键词： Photomasks Reticles mask making Photography integrated circuits Microscopes Semiconducting wafers Cameras Transistors Microelectronics

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Integration of mask R&D and mask manufacturing to support the european semiconductor industry

Integration of mask R&D and mask manufacturing to support th...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Dilger, M AMTC Adv Mask Technol Ctr D-01330 Dresden Germany

ISBN: (纸本)0819450189

the increasing gap between microelectronics minimum feature size and the exposure wavelength is a key challenge to the semiconductor industry. In the last 3 to 5 years mask technology has become a key contribute to bridge the sub wavelength gap. In particular optical enhancement technologies like Phase Shift masks (PSM) technologies and Optical Proximity Correction (OPC) methods have become widely used tools to improve optical imaging. However the use of these technologies has increased the complexity of mask making. In particular control of the critical dimension (CD) and defect control including defect inspection face new challenges for advanced Phase Shift masks. Inline with the increasing technology requirements the investment in mask technology is continuous increasing for a smaller volume of high end products which can afford costs of above 1 Mio. US $ for a mask set. therefore new concepts are required to support semiconductor manufacturers with advanced, customer specific photomasks at reasonable costs. the Advanced mask technology Center (AMTC) concept was therefore jointly developed by the three partners Advanced Micro Devices (AMD), DuPont Photomask (DPI) and Infineon Technologies (Infineon) for this purpose. the paper outlines the vision, the plans and the current status of the AMTC.

关键词： Photomasks Semiconductors Manufacturing Microelectronics Critical dimension metrology Lithography mask making Optical proximity correction Phase shifts Semiconducting wafers

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High precision mask repair using nanomachining

High precision mask repair using nanomachining

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Verbeek, M White, R Klos, M Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Nanomachining has recently been introduced as a new option for the repair of photomasks. the RAVE nm1300 system is a high precision system for subtractive removal of opaque mask defects. the first such system was installed at the Infineon mask House in Munich, Germany. this paper presents the results of the acceptance testing. Programmed pattern defects on binary chrome on glass masks, alternating phase shifting masks and both 248nm and 193nm halftone phase shifting masks were used for these tests. Some examples of carbon patch trimming, sequential defect removing as well as repairing of "non-removable" particles and irregularly shaped quartz bump defects demonstrate the unique capabilities of the tool.

关键词： Quartz Phase shifting Carbon Photomasks Particles Opacity Atomic force microscopy Binary data Glasses Scanning electron microscopy

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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mask technologies for deep X-ray LIGA

Mask technologies for deep X-ray LIGA

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Singleton, L Detemple, P Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819450189

masks for LIGA applications requiring deep X-ray lithography have different specifications compared to those masks used in microelectronic applications. Generally, deep X-ray LIGA applications require resist heights greater than 100 mum, whereas accurate pattern transfer in this depth of resist is obtained by using highly parallel synchrotron radiation beam from storage rings in the lithography. Given the unusual nature of the lithography, the requirements for the mask blank and the absorber structures are quite different from those used in optical lithography. this paper discusses different approaches to mask making, and weighs up the advantages and disadvantages of the different approaches. In particular, emphasis will be placed on the changes in critical dimensions and sidewall roughnesses in the resist structures produced by the different mask technologies.

关键词： LIGA deep X-ray lithography DXRL PMMA optical components waveguides moulding

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Ion projection lithography - progress in mask and tool technology

Ion projection lithography - progress in mask and tool techn...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ehrmann, A Kaesmaier, R Struck, T Infineon Technol D-81541 Munich Germany

ISBN: (纸本)0819436143

Ion Projection Lithography is one of the major competitors for sub 100nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained. the exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to be presented. mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.

关键词： ion beam lithography stencil mask placement

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