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检索条件"任意字段=17th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是21-30 订阅

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Inspecting alternating phase shift masks by matching stepper conditions

Inspecting alternating phase shift masks by matching stepper...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Hemar, S Rosenbusch, A Etec Syst Mask Business Grp IL-76705 Rehovot Israel

ISBN: (纸本)0819450189

the paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. the inspection methodology used is aerial imaging. Phase effects are taking into account inherently. the main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. the paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation.

关键词： aerial-image based mask inspection AAPSM OPC 193nm technology at-wavelength inspection

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mask technologies for deep X-ray LIGA

Mask technologies for deep X-ray LIGA

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Singleton, L Detemple, P Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819450189

masks for LIGA applications requiring deep X-ray lithography have different specifications compared to those masks used in microelectronic applications. Generally, deep X-ray LIGA applications require resist heights greater than 100 mum, whereas accurate pattern transfer in this depth of resist is obtained by using highly parallel synchrotron radiation beam from storage rings in the lithography. Given the unusual nature of the lithography, the requirements for the mask blank and the absorber structures are quite different from those used in optical lithography. this paper discusses different approaches to mask making, and weighs up the advantages and disadvantages of the different approaches. In particular, emphasis will be placed on the changes in critical dimensions and sidewall roughnesses in the resist structures produced by the different mask technologies.

关键词： LIGA deep X-ray lithography DXRL PMMA optical components waveguides moulding

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Early mask making during the 1960's in Dresden

Early mask making during the 1960's in Dresden

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunhofer Inst Photon Mikrosyst IPMS Dresden Germany

ISBN: (纸本)0819450189

One of the first european institutes for microelectronics, the Arbeitsstelle fur Molekularelektronik Dresden AME, was founded in 1961 by WERNER HARTMANN. the purpose was to develop processes for fabrication of integrated circuits. Concerning microlithography at first a five-stage mask technique was used since 1965. the artwork original which was called "Vorlage" was cut with a scale of about 200:1. Using a reduction camera the artwork original was reduced about 20 times, to get the reticle known as the "Zwischennegativ". this reticle was then further reduced about 10 times by "step and repeat", using a projection microscope, to get a master mask known as the "Originalschablone" whose scale was then 1: 1. By direct photocopying of the master mask one obtained a working mask which was called the "Arbeitsschablone". Finally, an aligned direct exposure of the working mask on to a wafer created, layer by layer, the micro-pattern of the chip array. Concerning the materials a double layer film was used for the artwork originals, and 2 inch photographic plates were used for the reticles and masks. In this way the first East German bipolar integrated circuits, NOR gates with 8 transistors, were made in Dresden in 1967. this was done with 4 masking levels on 25 mm Si wafers with 1.5 mm chip size and 20 mum minimal figure width (critical dimensions). In the late 1960's some improvements were introduced, particularly the 6-barrel semi-automatic photorepeater, which improved the figure width and gave lower tolerances. the largest chip made in 1969 was a J-K master-slave flipflop, this contained 36 transistors on a chip 1.6 mm x 1.8 mm and was done with 9 masking levels and with 10 mum minimal figure width.

关键词： Photomasks Reticles mask making Photography integrated circuits Microscopes Semiconducting wafers Cameras Transistors Microelectronics

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Development and characterization of new CD mask standards:: a status report

Development and characterization of new CD mask standards:: ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hauffe, B Döbereiner, S Brück, HJ Brendel, B Bettin, L Röth, KD Steinberg, W Speckbacher, P Sedlmeier, W Engel, T Hässler-Grohne, W Mirandé, W Bosse, H Infineon Technol AG D-81541 Munich Germany

ISBN: (纸本)0819450189

We report on the current status of a project on development and characterization of CD photomasks with 6025 format to be used as reference standards for different type of CD metrology instruments. the project consortium consists of mask suppliers, manufacturers of CD metrology instruments, users of such instruments and calibration laboratories. Different type of CD metrology instrumentation, namely optical CD microscopes, CD-SEM, and AFM will be applied for investigation and measurement of microstructures, additionally supported by AIMS tool. We will describe the basic design criteria of the mask standard and first measurement results gained with different metrology tools on the prototype mask standards.

关键词： Photomasks Prototyping Metrology Standards development Atomic force microscopy Calibration Line edge roughness Critical dimension metrology Chromium Opacity

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Integration of mask R&D and mask manufacturing to support the european semiconductor industry

Integration of mask R&D and mask manufacturing to support th...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Dilger, M AMTC Adv Mask Technol Ctr D-01330 Dresden Germany

ISBN: (纸本)0819450189

the increasing gap between microelectronics minimum feature size and the exposure wavelength is a key challenge to the semiconductor industry. In the last 3 to 5 years mask technology has become a key contribute to bridge the sub wavelength gap. In particular optical enhancement technologies like Phase Shift masks (PSM) technologies and Optical Proximity Correction (OPC) methods have become widely used tools to improve optical imaging. However the use of these technologies has increased the complexity of mask making. In particular control of the critical dimension (CD) and defect control including defect inspection face new challenges for advanced Phase Shift masks. Inline with the increasing technology requirements the investment in mask technology is continuous increasing for a smaller volume of high end products which can afford costs of above 1 Mio. US $ for a mask set. therefore new concepts are required to support semiconductor manufacturers with advanced, customer specific photomasks at reasonable costs. the Advanced mask technology Center (AMTC) concept was therefore jointly developed by the three partners Advanced Micro Devices (AMD), DuPont Photomask (DPI) and Infineon Technologies (Infineon) for this purpose. the paper outlines the vision, the plans and the current status of the AMTC.

关键词： Photomasks Semiconductors Manufacturing Microelectronics Critical dimension metrology Lithography mask making Optical proximity correction Phase shifts Semiconducting wafers

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Integration of OPC and mask data preparation

Integration of OPC and mask data preparation

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Schulze, S LaCour, P Rodriguez, N Mentor Graph Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819450189

As design rules shrink aggressively while the wavelength reduction in the exposure equipment cannot keep up, extensive usage of resolution enhancement techniques (RET) has complicated the generation and handling of mask writing data. Consequently, file size growth and computing times for mask data preparation rise beyond feasibility. In order to address these issues, an integrated flow has been developed. It starts out with the gds-file delivered by the backend of design and combines optical proximity correction, design rule and mask process rule verification, and all other necessary steps for mask data preparation into a single flow. the benefits of this strategy are time savings in data processing and handling, the elimination of intermediate files, and the elimination of data format interface issues. Since the new flow takes full advantage of the design hierarchy, file sizes shrink considerably and the whole data preparation infrastructure can be simplified. the paper will describe the transition to the new flow and quantify the benefits.

关键词： Photomasks Optical proximity correction Resolution enhancement technologies Databases Manufacturing Data storage Etching Interfaces Optical design Process modeling

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

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19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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Simulation study of pattern printability for reflective mask in EUV lithography

Simulation study of pattern printability for reflective mask...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Sugawara, M Chiba, A Nishiyama, I ASET EUV Proc Technol Res Lab Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)0819450189

Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an imbalance in the intensity distribution of the light diffracted from mask patterns. It was found that the shifts in the edges of 30-nm-wide T-shaped patterns on a wafer due to both shadowing and optical proximity effects could be corrected simultaneously at an incident angle of 4.84degrees to obtain the proper edge positions. An attenuated phase shift mask with various values for the attenuated reflectance was used to evaluate the printability of isolated line and hole patterns. Annular illumination was found to increase the DOF for isolated patterns 18 nm wide on a wafer, and a DOF of 300 nm was obtained for hole patterns 40 nm wide on a wafer. Printability was also evaluated for an alternating phase shift mask (alt-PSM) with an additive structure. An alt-PSM significantly increases the pattern contrast and enlarges the DOF up to 300 nm for isolated patterns 18 nm wide on a wafer.

关键词： optical proximity correction attenuated phase shift mask alternating phase shift mask

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