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检索条件"任意字段=17th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是41-50 订阅

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Measures to achieve 20-nm IPL stencil mask distortion

Measures to achieve 20-nm IPL stencil mask distortion

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Haugeneder, E Chalupka, A Lammer, T Loeschner, H Kamm, FM Struck, T Ehrmann, A Kaesmaier, R Wolter, A Butschke, J Irmscher, M Letzkus, F Springer, R IMS Nanofabricat GmbH Vienna Austria

ISBN: (纸本)0819445312

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).

关键词： Photomasks Semiconducting wafers Distortion Silicon Ion beams Electrodes Ions Wafer bonding Manufacturing Projection lithography

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Optimization of the e-beam sensitive bilayer CARL process fo...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Ochsenhirt, J Butschke, J Letzkus, F Höfflinger, B Irmscher, M Reuter, C Springer, R Elian, K IMS Chips D-70569 Stuttgart Germany

ISBN: (纸本)0819436143

Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.

关键词： Silicon Photoresist processing Photomasks Etching mask making Tin Line edge roughness Plasma Critical dimension metrology Statistical analysis

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mask strategy at international SEMATECH

Mask strategy at international SEMATECH

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Kimmel, KR Int SEMATECH Austin TX USA

ISBN: (纸本)0819445312

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the International technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. the largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. the development strategy at International SEMATECH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

关键词： mask photomask mask cost lithography cost International SEMATECH

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the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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Cleaning of low thermal expansion materials for low defect EUVL mask substrates

Cleaning of low thermal expansion materials for low defect E...

引用

18th european conference on mask technology for integrated circuits and microcomponents

作者： Krüger-Velthusen, E Friemel, F Aschke, L Lenzen, F Schott Lithotec AG Meiningen Germany

First tests for cleaning Zerodur(R) were accomplished. Because there are only a few cleaning methods suitable for the removal of small particles down to 50 nm we have investigated the behaviour of Zerodur(R) in DI wat... 详细信息

ISBN: (纸本)0819445312

关键词： Zerodur Ultrasonics Unmanned aerial vehicles Photomasks Atomic force microscopy Extreme ultraviolet lithography Particles Glasses Quartz Radium

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Contact layer printing using alternating phase-shifting masks: mask making, patterning results and production implementation

Contact layer printing using alternating phase-shifting mask...

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Pforr, R Dettmann, W Eisenhut, M Hennig, M Hofmann, D thiele, J thielscher, G Infineon Technol SC300 GmbH & Co KG D-01099 Dresden Germany

ISBN: (纸本)0819454370

Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the enlarged process window compared to conventional masks allows to shrink the contacts size or to substitute advanced scanners by older generation steppers for contact layer patterning. Using older generation exposure systems may cause problems originating in worse lens aberration performance. A method will be described how to overcome overlay problems by applying a specifically designed OL measurement target.

关键词： contacts phase-shifting masks layout conversion off-axis illumination pattern shift overlay

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Determination of residual stress and elastic constants of silicon open stencil masks for ion projection lithography

Determination of residual stress and elastic constants of si...

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Degen, A Shi, F Sossna, E Sunyk, R Voigt, J Volland, B Reinker, B Rangelow, IW Univ Gesamthsch Kassel Inst Tech Phys D-34109 Kassel Germany

ISBN: (纸本)0819431397

the Ion Projection Lithography is one challenge for a semiconductor technology, starting with sub micron structures, which are beyond the facilities of conventional UV lithography. Within this field of research one of the most critical aspects is the development of stencil masks, because the stress formation during the various process steps affects the critical dimensions (CD) of the structures to be written. In this paper different methods for the determination of residual, stress and elastic constants of thin (< 10 mu m) membranes of doped silicon are reviewed and additionally, a novel technique is presented. First experimental results show, that they are quite different from the values of the bulk material.

关键词： ion projection lithography silicon open stencil mask elastic constants residual stress

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Simulation study of pattern printability for reflective mask in EUV lithography

Simulation study of pattern printability for reflective mask...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Sugawara, M Chiba, A Nishiyama, I ASET EUV Proc Technol Res Lab Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)0819450189

Optical proximity effect corrections (OPC) and printability for phase shift masks were examined through simulations. Off-axis illumination exposing a reflective mask gives rise to a shadowing effect that produces an imbalance in the intensity distribution of the light diffracted from mask patterns. It was found that the shifts in the edges of 30-nm-wide T-shaped patterns on a wafer due to both shadowing and optical proximity effects could be corrected simultaneously at an incident angle of 4.84degrees to obtain the proper edge positions. An attenuated phase shift mask with various values for the attenuated reflectance was used to evaluate the printability of isolated line and hole patterns. Annular illumination was found to increase the DOF for isolated patterns 18 nm wide on a wafer, and a DOF of 300 nm was obtained for hole patterns 40 nm wide on a wafer. Printability was also evaluated for an alternating phase shift mask (alt-PSM) with an additive structure. An alt-PSM significantly increases the pattern contrast and enlarges the DOF up to 300 nm for isolated patterns 18 nm wide on a wafer.

关键词： optical proximity correction attenuated phase shift mask alternating phase shift mask

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PN and SOI wafer flow process for stencil mask fabrication

PN and SOI wafer flow process for stencil mask fabrication

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Butschke, J Ehrmann, A Haugeneder, E Irmscher, M Käsmaier, R Kragler, K Letzkus, F Löschner, H Mathuni, J Rangelow, IW Reuter, C Shi, F Springer, R Inst Mikroelekt Stuttgart D-70569 Stuttgart Germany

ISBN: (纸本)0819431397

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6" Si base wafers with 3 mu m membrane thickness and a membrane diameter between 120mm and 126mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Etching Semiconducting wafers Silicon Photomasks Oxides Electrochemical etching Metals Ions Lithography Wafer bonding

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