this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processin...
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this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processing, metrology, inspection and repair.
this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process aut...
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this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process automation and mask optimization.
the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication pro...
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the proceedings contains 26 papers from the 20theuropeanconference on masktechnology for integratedcircuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication process;towards systematic CD process control for e-beam lithography;optimized processes and absorber-stack materials for EUV masks;investigation of Cr etch chamber seasoning;metrological characterization of new CD photomask standards;dynamic mask defects in hot embossing lithography and predicting microfluidic response during immersion lithography scanning.
the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in th...
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ISBN:
(纸本)0819445312
the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by comparing it's quantitative results with CD measurements. masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared.
the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology....
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ISBN:
(纸本)0819445312
the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.
the Next Generation Lithography (NGL) mask Center of Competency (MCoC) has been developing masktechnology to support all of the major next generation lithographies for several years. Cross-cutting process development...
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ISBN:
(纸本)0819445312
the Next Generation Lithography (NGL) mask Center of Competency (MCoC) has been developing masktechnology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in boththe membrane and reflective mask formats. the masktechnology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. this information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we disucss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.
Nanomachining has recently been introduced as a new option for the repair of photomasks. the RAVE nm1300 system is a high precision system for subtractive removal of opaque mask defects. the first such system was inst...
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ISBN:
(纸本)0819445312
Nanomachining has recently been introduced as a new option for the repair of photomasks. the RAVE nm1300 system is a high precision system for subtractive removal of opaque mask defects. the first such system was installed at the Infineon mask House in Munich, Germany. this paper presents the results of the acceptance testing. Programmed pattern defects on binary chrome on glass masks, alternating phase shifting masks and both 248nm and 193nm halftone phase shifting masks were used for these tests. Some examples of carbon patch trimming, sequential defect removing as well as repairing of "non-removable" particles and irregularly shaped quartz bump defects demonstrate the unique capabilities of the tool.
International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the...
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ISBN:
(纸本)0819445312
International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the International technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. the largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. the development strategy at International SEMATECH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate withthe pace of the International technology Roadmap for Semiconductors. Withmasks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will masktechnology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worththeir escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on boththe local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the memb...
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ISBN:
(纸本)0819445312
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).
First tests for cleaning Zerodur(R) were accomplished. Because there are only a few cleaning methods suitable for the removal of small particles down to 50 nm we have investigated the behaviour of Zerodur(R) in DI wat...
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ISBN:
(纸本)0819445312
First tests for cleaning Zerodur(R) were accomplished. Because there are only a few cleaning methods suitable for the removal of small particles down to 50 nm we have investigated the behaviour of Zerodur(R) in DI water and aqueous solutions.
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