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检索条件"任意字段=18th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是31-40 订阅

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Defect printability and repair of alternating phase shift masks

Defect printability and repair of alternating phase shift ma...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Friedrich, C Verbeek, M Mader, L Crell, C Pforr, R Griesinger, UA Infineon Technol D-81609 Munich Germany

ISBN: (纸本)0819436143

this paper will start with an overview of the different defect types which can occur on alternating phase shifting masks. A test mask with programmed defects of these different types was fabricated. the defect printability was investigated using an AIMS system. these results were correlated to first printing results in the wafer-fab. the results give an overview of the requirements for an inspection and repair system for alternating phase shifting masks. In order to get a better understanding of this printability behaviour first simulations of defects using a 3-D mask simulation tool were carried out and compared to the measurements. Several examples of quartz-repairs with different qualities are presented together with the influence on the aerial image.

关键词： alternating phase shift mask defect printability repair

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

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19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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130 nm node mask development

130 nm node mask development

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

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Integration of OPC and mask data preparation

Integration of OPC and mask data preparation

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： Schulze, S LaCour, P Rodriguez, N Mentor Graph Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819450189

As design rules shrink aggressively while the wavelength reduction in the exposure equipment cannot keep up, extensive usage of resolution enhancement techniques (RET) has complicated the generation and handling of mask writing data. Consequently, file size growth and computing times for mask data preparation rise beyond feasibility. In order to address these issues, an integrated flow has been developed. It starts out with the gds-file delivered by the backend of design and combines optical proximity correction, design rule and mask process rule verification, and all other necessary steps for mask data preparation into a single flow. the benefits of this strategy are time savings in data processing and handling, the elimination of intermediate files, and the elimination of data format interface issues. Since the new flow takes full advantage of the design hierarchy, file sizes shrink considerably and the whole data preparation infrastructure can be simplified. the paper will describe the transition to the new flow and quantify the benefits.

关键词： Photomasks Optical proximity correction Resolution enhancement technologies Databases Manufacturing Data storage Etching Interfaces Optical design Process modeling

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the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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mask fabrication by nanoimprint lithography using anti-sticking layers

Mask fabrication by nanoimprint lithography using anti-stick...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schulz, H Osenberg, F Engemann, J Scheer, HC Univ Gesamthsch Wuppertal Wuppertal Germany

ISBN: (纸本)0819436143

We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon dry etch process than the thermoplastic polymers, but replication into these materials is much more complicated. We observe a high tendency for the polymer to adhere to the stamp. To minimize the sticking problem a fluorocarbon coating of the stamp was tested. It was deposited in a radio frequency plasma reactor with C4F8 as a feed gas. the thickness of the coating was several nm. It was characterised by contact angle measurement, XPS and FTIR analysis. Such coatings could successfully reduce sticking effects during an imprint process.

关键词： nanoimprint lithography (NIL) anti-sticking layer plasma deposition

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Pattern placement metrology tool matching within DPI's sites

Pattern placement metrology tool matching within DPI's sites

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Talene, N Röth, KD Dupont Photomasks France ZI Rousset France

ISBN: (纸本)0819431397

the requirements of the 0.18 mu m and 0.25 mu m technologies lead to advanced specifications for the mask making technology in terms of pattern placement metrology, tighter than 52nm (3s) for the 0.25 mu m generation and around 35nm (3s) for the next 0.18 mu m generation. In addition, the tremendous demand regarding cycle time reduction, performance to delivery schedule, and technical complexity on products impose to the mask manufacturer like Dupont Photomasks Inc. (DPI) the necessity to mix and match products between all the DPI sites. From this perspective, the matching of all the pattern placement metrology tools of all DPI production sites is mandatory. In order to control the tight specifications, the strategy for metrology is to implement a unique grid for registration on a world wide base at DPI and to calibrate all metrology tools and all writing tools to this standard grid. All investigations were performed on the LEICA LMS IPRO tools using the new correction software from Leica Microsystems.

关键词： Metrology Photomasks Calibration Manufacturing Lithography mask making Overlay metrology Semiconductors Microsystems Standards development

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OASIS - Progress on implementing the new stream format for containing data size explosion

OASIS - Progress on implementing the new stream format for c...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Steffen, SA Kent, NB Buck, P Mentor Graphics Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819454370

the data volumes of individual files used in the manufacture of modern integrated circuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files in 2004 exceed 200 GB threshold, worst case. OASIS, the new stream format developed under the sponsorship of SEMI, has been approved in the industry-wide voting in June 2003. the new format that on average will reduce the file size by an order of magnitude, enables to streamline data flows and provides increased efficiency in data exchange. the work to implement the new format into software tools is in progress. this paper gives an overview on the new format, reports results on data volume reduction and is a report on the status and benefits the new format can deliver. A data flow relying on OASIS as the input and transfer format is discussed.

关键词： GDSII stream OASIS integrated circuit layout mask making photomask hierarchical processing

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AutoMOPS: B2B and B2C in mask making. mask manufacturing performance and customer satisfaction improvement through better information flow management

AutoMOPS: B2B and B2C in mask making. Mask manufacturing per...

引用

17th european conference on mask technology for integrated circuits and microcomponents

作者： de Ridder, L Filies, O Rodriguez, B Kuijken, A Nimble NV (Belgium) Infineon Technologies AG (Germany)

ISBN: (纸本)0819440396

through application of modern supply chain concepts in combination with state-of-the-art Information technology, mask manufacturing performance and customer satisfaction can be improved radically the AutoMOPS solution emphasises on the elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and prototype production stages.

关键词： Photomasks Manufacturing mask making Semiconducting wafers Telecommunications Information technology Computer aided design Optical proximity correction Prototyping Standards development

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mask manufacturing contribution on 248nm & 193nm lithography performances

Mask manufacturing contribution on 248nm & 193nm lithography...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Barberet, A Fanget, G Richoilley, JC Tissier, M Quere, Y DuPont Photomasks F-13106 Rousset France

ISBN: (纸本)0819440396

In this study, we focus on mask manufacturing contribution on 248nm & 193nm lithography performances. the masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). masks are optimized for 150nm node at wafer scare, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.

关键词： mask manufacturing 248nm-lithography 193nm-lithography linearity AFLV MEEF

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