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检索条件"任意字段=18th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是71-80 订阅

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Development of an algorithm for monitoring of pattern fidelity on photomasks for 0.2μm technology and beyond based on light optical CD metrology tools

Development of an algorithm for monitoring of pattern fideli...

引用

15th european conference on mask technology for integrated circuits and microcomponents

作者： Schätz, T Hay, B Walden, L Ziegler, W Siemens AG Semicond Grp Mask Shop Munich D-8000 Munich Germany

ISBN: (纸本)0819431397

With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the deviation from their target value (CD-offtarget) and their linewidth variation (CD-uniformity) is not sufficient any more. In addition, measurements of corner rounding and line end shortening are necessary to define the pattern fidelity on the mask. Otherwise printing results will not be satisfying. Contacts and small features are suffering mainly from imaging inaccuracies. the size of the contacts as an example may come out too small on the photomask and therefore reduces the process window in lithography. In order to meet customer requirements for pattern fidelity, a measurement algorithm and a measurement procedure (e.g. implementing of test patterns on critical layers) needs to be introduced and specifications to be defined. In this paper different approaches are compared, allowing an automatic qualification of photomasks by optical light microscopy based on a MueTec CD-metrology system, the newly developed MueTec 2030UV, provided with a 365 nm light source (i-line). the i-line illumination allows to resolve features down to 0.2 mu m size with good repeatability.

关键词： Photolithography

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Feature proximity errors on mask: Assessment results of commercially obtained reticles

Feature proximity errors on mask: Assessment results of comm...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)

ISBN: (纸本)0819450189

the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as much a strong requirement for a good reticle quality, in view of the mask-Error-Enhancement-Factor (MEEF), which describes how the deviation of an actual feature from its nominal size is magnified onto the wafer. the present paper will discuss the results obtained from a mask linearity study, in which the simultaneous feature size control of different feature types and tone (lines, spaces, dots, contacts) is assessed for varying nominal feature size and proximity (isolated vs. equal lines and spaces), using a reticle CD-SEM. Today mask shops have a range of mask writers available, i.e., 10kV raster scan gaussian beam e-beam tools, laser based optical tools and 50kV vector scan variable shaped e-beam systems. the tool used leaves a so-called "finger print" on the reticle, as a varying linearity behavior. It will be shown that the 50kV writers are superior in terms of mask linearity, as can be expected. Yet, the patterning process used (especially the resist and etching of the patterning layer) is as important. In addition, the mask shop may have compensated for etch bias and for known proximity effects, by tweaking the mask data. the paper will show and discuss the results of masks obtained from over 15 different sources (varying mask shop, tool used and process used), in an anonymous way, as an impression of what is presently available on the market. the results are discussed against the mask requirements table in the ITRS2001.

关键词： 4X reticles CD metrology 2D quality proximity effects 193nm lithography

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A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance

A system to improve the understanding of collected logistic ...

引用

19th european conference on mask technology for integrated circuits and microcomponents

作者： van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-factor, line-speed, WIP, etc. To improve the line flow, we set up rules for optimising batching at operations and forbid batching between operations, we defined maximum and minimum WIP at the operations, scheduled urgency of the different lots and built rules for bottleneck management. Also we restricted the number of "hot lots". By migrating to the modem MES (manufacturing execution system) MaTISSe, which manages the shopfloor control, and a reporting database, we are able to eliminate the time deviations within our data, caused by data-extraction for different reports at different moments. this gives us a better understanding of our fixed bottleneck and a faster recognition of the temporarily bottlenecks caused by missing availability of machines or men. In this paper we describe the features and advantages of our new MES, as well as the migration process. After approx. 6 months we already achieved considerable benefits. Our plan is to extend decision support within the MES, to help both managers and operators to make the right decisions. the project behind this paper reaped major benefits described here and we are looking forward to further challenges and successes.

关键词： mask house bottleneck management cycle time flow-factor MES

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Modified fused silica for 157 nm mask substrates

Modified fused silica for 157 nm mask substrates

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany

ISBN: (纸本)0819436143

the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. the material for the mask substrates, for example, is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material. At 157 nm synthetic fused silica shows only very low transmittance. For this reason alternative materials were discussed, i.e. CaF2, MgF2 and Al2O3 But all these materials have their own drawbacks, i.e. MgF2 shows birefringence, CaF2 and MgF2 have a large thermal expansion and Al2O3 has only low transmittance due to a high impurity level. On the other hand recent developments of modified fused silica demonstrate that high transmittance values can be achieved (i.e. 80% for 1 cm path length). this, together with its excellent mechanical and thermal properties, makes fused silica the material of choice for 157 nm masks.

关键词： Silica Photomasks Absorption Optical lithography Magnesium fluoride Refractive index Fluorine Transmittance Crystals Optics manufacturing

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Compensation of long-range process effects on photomasks by design data correction

Compensation of long-range process effects on photomasks by ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to avoid big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50 - 70 % depending on pattern details. the data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment. For advanced photomasks the mask data preparation times have become a major issue. To tackle this fracture time increase distributed processing has been introduced into the photomask design flow. We also report first results on the fracture time reduction achievable by distributing the data correction onto a Linux cluster.

关键词： mask process correction dry etch loading pattern density CATS

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Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond

Cluster tool for photo mask inspection and qualification at ...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH

the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manufacturer and user. Cluster Software and common interfaces to the Cluster Tools allow to perform these measurements fast and in an automated manner suitable for production.

关键词： Photolithography

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Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

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High precision mask fabrication for deep X-ray lithography

High precision mask fabrication for deep X-ray lithography

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schmidt, A Himmelsbach, G Lüttge, R Adam, D Hoke, F Schacke, H Belic, N Hartmann, H Burkhard, F Wolf, H Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819436143

Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components becomes possible. We report on a new approach where the direct patterning of an intermediate mask has been performed by an upgraded Leica ZBA23 shaped beam electron writer with an acceleration voltage of 40 kV. Optimised development and exposure processes as well as the use of particularly performed proximity correction methods allowed to produce feature sizes down to 0.4 mu m. Taking CD-values of the final gold absorber structure as a target, an optimised parameter set has been found to manufacture periodic lines-and-spaces structures of 1.5 mu m width with an accuracy of 0.18 mu m per edge which were written into 2 mu m thick PMMA resist. Additionally, new intermediate mask membrane materials have been investigated. Special PECVD deposition processes have been developed in order to produce thin mask membranes made from silicon nitride, silicon carbide, and diamond. We produced a fully operational LIGA working mask with a thickness of 4.5 mu m on the basis of a diamond membrane with a 30% thickness uniformity over a process diameter of 60 mm. Finally, thorough investigations have been performed in order to determine the accuracy of structure transfer in the X-ray lithography process to the final LIGA mask. Taking all the structure accuracy limiting aspects into account, we found a runout per edge of 0.15 mu m using the BESSY I radiation spectrum as a reference. these data fit very precisely into experimentally obtained results.

关键词： Photomasks Electron beam lithography Gold Silicon X-ray lithography Polymethylmethacrylate Diamond Manufacturing Silicon carbide mask making

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Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

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Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool

Fully automated CD -: Metrology and mask inspection in a mas...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany

ISBN: (纸本)0819450189

Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks and their tightening specifications. Hence, this calls for the capability of fully automated CD measurements on a large number of dense and isolated lines and 2-dimensional features under production conditions. In this paper we report on such a highly automated measurement system for CD measurements from MueTec. Either an ASCII software interface or a specially developed software interface to connect the MueTec with the CATS(TM) mask data fracturing software handles the large amount of co-ordinates and other information like design images from the measurement sites and their surrounding, which are necessary for fully automated CD measurements. Because the latter is the standard in mask-making and data-formats, this level of automation guarantees a good industrial integration of the MueTec system. Fully automated and reliable CD measurements are based on very stable tool hardware and especially on a positioning stage with best possible positioning accuracy (range better 0.5 mum), significantly improved possibilities of software controlled positioning and an automated job set up and execution. the time gain in relation to existing measurement programs in the extent of supply has turned out to be dramatically large. the User Interfaces and their applications will be described.

关键词： Photomasks Critical dimension metrology Reticles Inspection Deep ultraviolet Metrology Binary data Objectives Cameras Environmental sensing

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