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检索条件"任意字段=18th European Conference on Mask Technology for Integrated Circuits and Microcomponents"
96 条 记 录,以下是71-80 订阅
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Development of an algorithm for monitoring of pattern fidelity on photomasks for 0.2μm technology and beyond based on light optical CD metrology tools
Development of an algorithm for monitoring of pattern fideli...
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15th european conference on mask technology for integrated circuits and microcomponents
作者: Schätz, T Hay, B Walden, L Ziegler, W Siemens AG Semicond Grp Mask Shop Munich D-8000 Munich Germany
With the ongoing shrinking of design rules, the complexity of photomasks does increase continuously. Features are getting smaller and denser, their characterization requires sophisticated procedures. Looking for the d... 详细信息
来源: 评论
Feature proximity errors on mask: Assessment results of commercially obtained reticles
Feature proximity errors on mask: Assessment results of comm...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)
the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as ... 详细信息
来源: 评论
A system to improve the understanding of collected logistic data, to optimise cycle-time and delivery performance
A system to improve the understanding of collected logistic ...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: van Rooijen, WJ Rodriguez, B Infineon Technol AG D-81609 Munich Germany
A complex production mask house faces the issue of handling and understanding the logistics information from the production process of the masks. We managed to control key performance indicators like cycle time, flow-... 详细信息
来源: 评论
Modified fused silica for 157 nm mask substrates
Modified fused silica for 157 nm mask substrates
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany
the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demand... 详细信息
来源: 评论
Compensation of long-range process effects on photomasks by design data correction
Compensation of long-range process effects on photomasks by ...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany
CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as w... 详细信息
来源: 评论
Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond
Cluster tool for photo mask inspection and qualification at ...
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH
the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manu... 详细信息
来源: 评论
Aerial image measurement technique for today's and future 193nm lithography mask requirements
Aerial image measurement technique for today's and future 19...
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20th european conference on mask technology for integrated circuits and microcomponents
作者: Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany
the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) syste... 详细信息
来源: 评论
High precision mask fabrication for deep X-ray lithography
High precision mask fabrication for deep X-ray lithography
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16th european conference on mask technology for integrated circuits and microcomponents
作者: Schmidt, A Himmelsbach, G Lüttge, R Adam, D Hoke, F Schacke, H Belic, N Hartmann, H Burkhard, F Wolf, H Inst Mikrotech Mainz GmbH D-55129 Mainz Germany
Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components bec... 详细信息
来源: 评论
Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution
Semi-transparent isolated defects detection by die to databa...
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20th european conference on mask technology for integrated circuits and microcomponents
作者: Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS
the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database re... 详细信息
来源: 评论
Fully automated CD -: Metrology and mask inspection in a mask production environment using the MueTec <M5k>DUV tool
Fully automated CD -: Metrology and mask inspection in a mas...
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19th european conference on mask technology for integrated circuits and microcomponents
作者: Scheuring, G Petrashenko, A Döbereiner, S Hillmann, F Brück, HJ Hourd, AC Grimshaw, A Hughes, G Chen, SB Chen, P Schätz, T Struck, T van Adrichem, P Boerland, H Lehnigk, S MueTec GmbH D-80993 Munich Germany
Besides the metrology performance of a CD measurement tool, its close integration into a manufacturing environment becomes more and more important. this is extremely driven by the ever increasing complexity of masks a... 详细信息
来源: 评论