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检索条件"任意字段=18th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 96 条记录，以下是71-80 订阅

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Defect printability and repair of alternating phase shift masks

Defect printability and repair of alternating phase shift ma...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Friedrich, C Verbeek, M Mader, L Crell, C Pforr, R Griesinger, UA Infineon Technol D-81609 Munich Germany

ISBN: (纸本)0819436143

this paper will start with an overview of the different defect types which can occur on alternating phase shifting masks. A test mask with programmed defects of these different types was fabricated. the defect printability was investigated using an AIMS system. these results were correlated to first printing results in the wafer-fab. the results give an overview of the requirements for an inspection and repair system for alternating phase shifting masks. In order to get a better understanding of this printability behaviour first simulations of defects using a 3-D mask simulation tool were carried out and compared to the measurements. Several examples of quartz-repairs with different qualities are presented together with the influence on the aerial image.

关键词： alternating phase shift mask defect printability repair

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mask fabrication by nanoimprint lithography using anti-sticking layers

Mask fabrication by nanoimprint lithography using anti-stick...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schulz, H Osenberg, F Engemann, J Scheer, HC Univ Gesamthsch Wuppertal Wuppertal Germany

ISBN: (纸本)0819436143

We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon dry etch process than the thermoplastic polymers, but replication into these materials is much more complicated. We observe a high tendency for the polymer to adhere to the stamp. To minimize the sticking problem a fluorocarbon coating of the stamp was tested. It was deposited in a radio frequency plasma reactor with C4F8 as a feed gas. the thickness of the coating was several nm. It was characterised by contact angle measurement, XPS and FTIR analysis. Such coatings could successfully reduce sticking effects during an imprint process.

关键词： nanoimprint lithography (NIL) anti-sticking layer plasma deposition

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Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Optimization of the e-beam sensitive bilayer CARL process fo...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ochsenhirt, J Butschke, J Letzkus, F Höfflinger, B Irmscher, M Reuter, C Springer, R Elian, K IMS Chips D-70569 Stuttgart Germany

ISBN: (纸本)0819436143

Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.

关键词： Silicon Photoresist processing Photomasks Etching mask making Tin Line edge roughness Plasma Critical dimension metrology Statistical analysis

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Development of embedded attenuated phase-shifting mask (EAPSM) blanks for ArF lithography

Development of embedded attenuated phase-shifting mask (EAPS...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Mitsui, H Nozawa, O Ohtsuka, H Takeuchi, M Kobayashi, H Ushida, M Electroopt Co HOYA Corp Nagasaka Factory Yamanashi 4088550 Japan

ISBN: (纸本)0819436143

the embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We at HOYA have attempted to extend the applicability of MoSi-based EAPSM blanks to 193nm lithography, helping extend the life of the existing infrastructure for conventional EAPSM fabrication. We have completed tuning our new MoSi-based film for 193nm lithography and characterized its optical properties, chemical durability, ArF laser exposure durability and mask-making process compatibility.

关键词： reticle embedded attenuated phase-shift mask (EAPSM) 193nm lithography MoSi photomask blanks

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Modified fused silica for 157 nm mask substrates

Modified fused silica for 157 nm mask substrates

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany

ISBN: (纸本)0819436143

the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. the material for the mask substrates, for example, is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material. At 157 nm synthetic fused silica shows only very low transmittance. For this reason alternative materials were discussed, i.e. CaF2, MgF2 and Al2O3 But all these materials have their own drawbacks, i.e. MgF2 shows birefringence, CaF2 and MgF2 have a large thermal expansion and Al2O3 has only low transmittance due to a high impurity level. On the other hand recent developments of modified fused silica demonstrate that high transmittance values can be achieved (i.e. 80% for 1 cm path length). this, together with its excellent mechanical and thermal properties, makes fused silica the material of choice for 157 nm masks.

关键词： Silica Photomasks Absorption Optical lithography Magnesium fluoride Refractive index Fluorine Transmittance Crystals Optics manufacturing

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Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond

Cluster tool for photo mask inspection and qualification at ...

引用

16th european conference on mask technology for integrated circuits and microcomponents

作者： Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH

the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manufacturer and user. Cluster Software and common interfaces to the Cluster Tools allow to perform these measurements fast and in an automated manner suitable for production.

关键词： Photolithography

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High precision mask fabrication for deep X-ray lithography

High precision mask fabrication for deep X-ray lithography

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schmidt, A Himmelsbach, G Lüttge, R Adam, D Hoke, F Schacke, H Belic, N Hartmann, H Burkhard, F Wolf, H Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819436143

Deep X-ray lithography with synchrotron radiation represents the primary process step of the LIGA technique, by means of which high volume production of micro-mechanical, micro-optical and micro-fluidic components becomes possible. We report on a new approach where the direct patterning of an intermediate mask has been performed by an upgraded Leica ZBA23 shaped beam electron writer with an acceleration voltage of 40 kV. Optimised development and exposure processes as well as the use of particularly performed proximity correction methods allowed to produce feature sizes down to 0.4 mu m. Taking CD-values of the final gold absorber structure as a target, an optimised parameter set has been found to manufacture periodic lines-and-spaces structures of 1.5 mu m width with an accuracy of 0.18 mu m per edge which were written into 2 mu m thick PMMA resist. Additionally, new intermediate mask membrane materials have been investigated. Special PECVD deposition processes have been developed in order to produce thin mask membranes made from silicon nitride, silicon carbide, and diamond. We produced a fully operational LIGA working mask with a thickness of 4.5 mu m on the basis of a diamond membrane with a 30% thickness uniformity over a process diameter of 60 mm. Finally, thorough investigations have been performed in order to determine the accuracy of structure transfer in the X-ray lithography process to the final LIGA mask. Taking all the structure accuracy limiting aspects into account, we found a runout per edge of 0.15 mu m using the BESSY I radiation spectrum as a reference. these data fit very precisely into experimentally obtained results.

关键词： Photomasks Electron beam lithography Gold Silicon X-ray lithography Polymethylmethacrylate Diamond Manufacturing Silicon carbide mask making

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mask quality (control) evaluation using the Virtual Stepper System (VSSTM)

Mask quality (control) evaluation using the Virtual Stepper ...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Karklin, Linard Weed, J.Tracy Li, Junling Numerical Technologies Inc San Jose United States

the Virtual Stepper System (VSSTM) demonstrates high sensitivity and good accuracy to measure critical dimension (CD) variations and is capable of accurately predicting how CD variations are transferred into silicon. this technology can be fine tuned to acquire images through on-line or off-line inspection systems and provides very consistent, accurate results. VSS a proven technology for evaluating mask defect printability can be applied to reticle quality control and provide data on CD variations, corner rounding, and edge roughness.

关键词： masks

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mask error enhancement factor

Mask error enhancement factor

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Maurer, W. Infineon Technologies AG Munich Germany

Optical lithography at the limit of resolution is a highly non-linear pattern transfer process. One consequence of this is an apparent magnification of mask errors. the paper first demonstrates early experimental evidence of this effect. then it assesses the influence of pattern geometry, of the lithography tool setup, and of different optical enhancement techniques on the MEEF using primarily simulation data. the correspondence of MEEF as an effect of mask linewidth variations to the increased printability of mask defects is illustrated. Strategies to minimize the MEEF - like alternating phase shift masks - are presented. Because the MEEF describes conveniently the concerted action of all components on the whole lithographic pattern transfer process, it is proposed to use the MEEF as a new yardstick to characterize the degree of difficulty of a given lithographic process.

关键词： masks

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Improvements to mask inspectability by use of pattern proximity correction

Improvements to mask inspectability by use of pattern proxim...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Rosenbusch, Anja Bailey, Vicky Eran, Yair Falah, Reuven Holmes, Neil Hourd, Andrew C. McArthur, Andrew Staud, Wolf Sigma-C Inc Campbell United States

Inspection is one of the major challenges in mask making, as it is one of its most performance crucial steps in the entire mask making process. Especially contact patterns show difficulties in die-to-database inspection as the CAD data asks for square corners. the paper presents the impact of Laser Proximity Correction (LPC) on inspectability of contact and line patterns. LPC is a mask enhancement technique improving image quality and CD linearity for laser pattern generators. the use of the LBM (linewidth bias monitor) tool in order to characterize CD uniformity over the entire plate is demonstrated.

关键词： masks

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