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20th european conference on mask technology for integrated circuits and microcomponents

作者： Aschke, L Becker, H Friemel, F Leutbecher, T Olschewski, N Renno, M Rüggeberg, F Schiffler, M Schmidt, F Sobel, F Walter, K Hess, G Lenzen, F Knapp, K Schott Lithotec AG D-98617 Meiningen Germany

ISBN: (纸本)0819454370

mask Blanks for EUV Lithography require a lot of new properties and features compared to standard COG blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. this papers introduces in the special features of Low thermal Expansion Materials (LTEM), their manufacturing and the special metrology for the Coefficient of thermal Expansion (CTE). We will look into some details of polishing methods for much better flatness of the substrates. the process and the metrology of low defect EUV multilayer coatings will be elucidated and some aspects of this will be explained in detail. In addition we will present new results from no-chrome alternative absorber materials.

关键词： Extreme ultraviolet Photomasks Multilayers Extreme ultraviolet lithography Zerodur Reflectivity Polishing Glasses Surface finishing Temperature metrology

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PN and SOI wafer flow process for stencil mask fabrication

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 20-29页

作者： Butschke, J. Ehrmann, A. Haugeneder, E. Irmscher, M. Kaesmaier, R. Kragler, K. Letzkus, F. Loeschner, H. Mathuni, J. Rangelow, I.W. Reuter, C. Shi, F. Springer, R. Inst fuer Mikroelektronik Stuttgart Stuttgart Germany

Two process flows for the fabrication of stencil masks have been developed. the PN Wafer Flow- and the SOI Wafer Flow Process. Membranes and stencil masks out of different 6 inches Si base wafers with 3 μm membrane thickness and a membrane diameter between 120 mm and 126 mm were fabricated. the membrane stress depending on the material property and doping level has been determined. First metrology measurements have been carried out.

关键词： Lithography

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Modified fused silica for 157 nm mask substrates

Modified fused silica for 157 nm mask substrates

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Uebbing, B Vydra, J thomas, S Takke, R Quartzglass Opt & Lamps D-63450 Hanau Germany

ISBN: (纸本)0819436143

the 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nn in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. the material for the mask substrates, for example, is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material. At 157 nm synthetic fused silica shows only very low transmittance. For this reason alternative materials were discussed, i.e. CaF2, MgF2 and Al2O3 But all these materials have their own drawbacks, i.e. MgF2 shows birefringence, CaF2 and MgF2 have a large thermal expansion and Al2O3 has only low transmittance due to a high impurity level. On the other hand recent developments of modified fused silica demonstrate that high transmittance values can be achieved (i.e. 80% for 1 cm path length). this, together with its excellent mechanical and thermal properties, makes fused silica the material of choice for 157 nm masks.

关键词： Silica Photomasks Absorption Optical lithography Magnesium fluoride Refractive index Fluorine Transmittance Crystals Optics manufacturing

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Compensation of long-range process effects on photomasks by design data correction

Compensation of long-range process effects on photomasks by ...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Blöcker, M Ballhorn, G Schneider, J Belic, N Eisenmann, H Keogan, D Infineon Technol AG D-81609 Munich Germany

ISBN: (纸本)0819450189

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below;the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading. We address this topic by compensating such effects via design data correction analogous to proximity correction. Dry etch loading is modeled by gaussian convolution of pattern densities. Data correction is done geometrically by edge shifting. As the effect amplitude has an order of magnitude of 10 nm this can only be done on e-beam writers with small address grids to avoid big CD steps in the design data. We present modeling and correction results for special mask patterns with very strong pattern density variations showing that the compensation method is able to reduce CD uniformity by 50 - 70 % depending on pattern details. the data correction itself is done with a new module developed especially to compensate long-range effects and fits nicely into the common data flow environment. For advanced photomasks the mask data preparation times have become a major issue. To tackle this fracture time increase distributed processing has been introduced into the photomask design flow. We also report first results on the fracture time reduction achievable by distributing the data correction onto a Linux cluster.

关键词： mask process correction dry etch loading pattern density CATS

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Feature proximity errors on mask: Assessment results of commercially obtained reticles

Feature proximity errors on mask: Assessment results of comm...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Jonckheere, R Potoms, G Philipsen, V IMEC vzw (Belgium)

ISBN: (纸本)0819450189

the main concern for production-oriented reticles has so far been the control of the critical dimension (CD), i.e. the CD uniformity and the CD mean-to-target. Feature linearity and overall feature size control is as much a strong requirement for a good reticle quality, in view of the mask-Error-Enhancement-Factor (MEEF), which describes how the deviation of an actual feature from its nominal size is magnified onto the wafer. the present paper will discuss the results obtained from a mask linearity study, in which the simultaneous feature size control of different feature types and tone (lines, spaces, dots, contacts) is assessed for varying nominal feature size and proximity (isolated vs. equal lines and spaces), using a reticle CD-SEM. Today mask shops have a range of mask writers available, i.e., 10kV raster scan gaussian beam e-beam tools, laser based optical tools and 50kV vector scan variable shaped e-beam systems. the tool used leaves a so-called "finger print" on the reticle, as a varying linearity behavior. It will be shown that the 50kV writers are superior in terms of mask linearity, as can be expected. Yet, the patterning process used (especially the resist and etching of the patterning layer) is as important. In addition, the mask shop may have compensated for etch bias and for known proximity effects, by tweaking the mask data. the paper will show and discuss the results of masks obtained from over 15 different sources (varying mask shop, tool used and process used), in an anonymous way, as an impression of what is presently available on the market. the results are discussed against the mask requirements table in the ITRS2001.

关键词： 4X reticles CD metrology 2D quality proximity effects 193nm lithography

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Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

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Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

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Cluster tool for photo mask inspection and qualification at 150 nm design rules and beyond

Cluster tool for photo mask inspection and qualification at ...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Peter, Kai Ordynskyy, Volodymyr Dolainsky, Christoph Hans Hartmann aiss GmbH

the concept and first software modules are developed to integrate photomask inspection, metrology and aerial image simulation tools into a cluster in order to provide enhanced quality assessment means to the mask manufacturer and user. Cluster Software and common interfaces to the Cluster Tools allow to perform these measurements fast and in an automated manner suitable for production.

关键词： Photolithography

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A printability study for phase-shift masks at 193nm lithography

A printability study for phase-shift masks at 193nm lithogra...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819450189

this paper reports on the mask quality printability for 6% attenuated phase-shift masks (PSM) using 193nm lithography. It is part of a systematic assessment of the impact of mask defects on the printed image. Our previous work [1-3] focused on defect printability of binary masks. Furthermore, an attenuated PSM is also used to print contact holes (CH), as it improves the process latitudes. In this paper we focus on the 2D quality of the CH on the mask. Due to mask-writer effects, the ideally square CH becomes rounded on the mask. the 2D mask quality determines the printed image, together with the exposure conditions and wafer stack. In a first section the influence of programmed mask defects on a 6% attenuated PSM is evaluated. the 100nm gatestyle design is based on the Defect Sensitivity Monitor (DSM of ASML maskTools). We consider two different degrees of optical proximity correction (OPC), i.e., no OPC, and both serifs and scatter bars (SB). the mask contains programmed soft defects made from resist dots to mimic opaque defects such as bumps and spots. the wafers are exposed on an ASML PAS5500/950 scanner with 193nm conventional illumination (0.7sigma) using a numerical aperture (NA) of 0.63. the printing results are compared to aerial image simulations taking into account the actual mask contours. A comparison table, which classifies the defect based on the induced linewidth deviation, is drawn from it. the second section deals with 2D quality of CH on a 6% attenuated PSM. the design contains CH of various sizes and in various pitches. the CH are provided with serifs on the corners, thereby varying size and placement. these serifs are intended as a correction to the design to incorporate possible mask-writer-generated rounding of the ideally square CH. the purpose of this study is to evaluate the influence of such serifs in the design towards wafer printing. the wafers are exposed on an ASML PAS5500/1100 scanner with 193nm conventional illumination (0.6sigma) usi

关键词： defect printability mask 2D quality 193nm lithography attenuated phase-shift mask

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Monitoring strategy to match the advanced fabs

Monitoring strategy to match the advanced fabs

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Ackmann, PW Adv Mask Technol Ctr D-013330 Dresden Germany

ISBN: (纸本)0819454370

the reduction in feature size below the exposure wavelength, the requirement for high yields, the expectation for consistent cycletime and shipment to mix, all mean that the reticle industry must be like advanced wafer fabrication centers. Due to the lower output of write tools versus steppers, and the fact that a reticle is a lot of one instead of 25 or 50 wafers as well as the need to match ship date to Fab ramp, the reticle line monitoring strategy must be optimized for small sample size. the use of tool time and alternative inspection strategies can lead to the early detection of problems. Because every reticle is a customer specific design, the monitoring strategy takes on a new look compared to the Fab. We have organized the AMTC to resemble a wafer fab. We have a dedicated Integration group that works with the customers and technologists, to monitor the needs of the customers and then drive the development programs that improve reticle capability. We have a dedicated yield team to identify and classify the yield loss mechanisms and define probable causes. the teams then work with the Process owners to fix the source of yield loss and track the corrective actions. All sources of variations must be modeled and then sources of errors reduced to levels below the tool specification. the manufacturing organization has all the process and tool experts to focus on Pilot Line and Development tasks to meet the advance needs of our customers. With the organization in place we can then develop the methods based on Reticle and Fab manufacturing to best control the line and provide development with manufacturing cycle times.

关键词： Photomasks Reticles Manufacturing Etching Semiconducting wafers Optical proximity correction Inspection Critical dimension metrology Process control Control systems

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