Metallic titanium nitride(TiN)thin films are promising to form novel ohmic contact on wide band gap semiconduct,such as,GaN based Ⅲ-Ⅴ *** characterization techniques are employed to reveal the physical and chemical ...
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Metallic titanium nitride(TiN)thin films are promising to form novel ohmic contact on wide band gap semiconduct,such as,GaN based Ⅲ-Ⅴ *** characterization techniques are employed to reveal the physical and chemical properties of TiN thin films deposited on Si(100)substrates at different temperatures by plasma-enhanced Atomic Layer Deposition(PEALD)using TiCl4 and NH3 as the precursors.
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