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检索条件"任意字段=2016 3rd International Conference on Engineering Technology and Application(ICETA 2016)"
3892 条 记 录,以下是51-60 订阅
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Information technology Audit For Management Evaluation Using COBIT and IT Security (Case Study On Dishubkominfo of North Maluku Provincial Government, Indonesia)  3
Information Technology Audit For Management Evaluation Using...
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3rd international conference on Information technology, Computer, and Electrical engineering (ICITACEE)
作者: Arief, Assaf Wahab, Iis Hamsir Ayub Univ Khairun Dept Informat Engn Ternate Indonesia Univ Khairun Dept Elect Engn Ternate Indonesia
in modern organizational, the use of information technology to support the achievement of organizational and business goals must be balanced with the effectiveness and efficiency of its management. Information technol... 详细信息
来源: 评论
Dragonfly wing inspired multifunctional antireflective superhydrophobic surfaces  3
Dragonfly wing inspired multifunctional antireflective super...
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3rd international conference on Emerging Electronics, ICEE 2016
作者: Tripathy, Abinash Sen, Prosenjit Centre for Nano Science and Engineering Indian Institute of Science Bangalore India
We report a single etch wafer scale fabrication of nanostructured antireflective superhydrophobic surface using deep reactive ion etching technique inspired by the Dragonfly wing surface. Contact angle as high as 168&... 详细信息
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Performance limitations of optical transmission system due to the combined effects of chirping, GVD and SPM  3
Performance limitations of optical transmission system due t...
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3rd international conference on Electrical engineering and Information and Communication technology, iCEEiCT 2016
作者: Fatima, Kanis Islam, Md. Saiful Institute of Information and Communication Technology Bangladesh University of Engineering and Technology Dhaka Bangladesh
Due to the technological enhancement of fiber-optic communication, for large data rate, intense optical power, increasing link length and diverse channel in the wavelength division multiplexing (WDM), the simultaneous... 详细信息
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application of Parameterized FEA and Moment Method in Structural Fatigue Life Reliability Estimation  3
Application of Parameterized FEA and Moment Method in Struct...
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3rd international conference on Robotics and Automation engineering (ICRAE)
作者: Zhao Zhengfan Li Xun Liu Jingbo Nan Kaikai PLA Troops Beijing 63961 Peoples R China Xian Polytech Univ Coll Elect & Informat Xian Shaanxi Peoples R China
During the service of the missile suspension structure, the unexpected fatigue failure is emerged because of the dimension dispersibility resulting from machining deviation and design tolerance. In order to get the ma... 详细信息
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The inhibitory factors of the anammox process  3rd
The inhibitory factors of the anammox process
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3rd Annual international conference on Material Science and Environmental engineering, ICMSEE 2015
作者: Yin, Z.J. Zang, L.H. Ji, D.D. College of Environmental Science and Engineering Qilu University of Technology Ji’nanShandong China
Anaerobic ammonium oxidation (anammox) is a novel and perspective technology for nitrogen removal compared with conventional biological treatment methods. The objective of this paper was to investigate the inhibitory ... 详细信息
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Hybrid two-section model for the small-signal current crowding effect in SiGe HBTs  3
Hybrid two-section model for the small-signal current crowdi...
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3rd international conference on Emerging Electronics, ICEE 2016
作者: Yadav, Shon Chakravorty, Anjan Department of Electrical Engineering Indian Institute of Technology Madras Chennai600036 India
A two-section equivalent circuit model with hybrid topology is proposed to model the base impedance of SiGe HBTs. The formulations suitable for implementation in compact-model are obtained. A simpler yet accurate meth... 详细信息
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Equivalent Analysis Method of the Transmission Characteristic of a Laser in Atmosphere Turbulence  3
Equivalent Analysis Method of the Transmission Characteristi...
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3rd international conference on Information Science and Control engineering (ICISCE)
作者: Ren Bin Chen Chunyi Ni Xiaolong Zhang Feng Changchun Univ Sci & Technol Sch Comp Sci & Technol Changchun 130022 Jilin Peoples R China Changchun Inst Technol Sch Comp Technol & Engn Changchun 130022 Jilin Peoples R China Changchun Univ Sci & Technol Sch Photoelect Engn Changchun 130022 Jilin Peoples R China
Verifying the theoretical result of transmission in the atmospheric turbulence is difficult because atmospheric turbulence is random. The simulation technology features parametrical controllability and statistical rea... 详细信息
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Performance projection of mono and multi-layer silicane FETs in the ballistic limit  3
Performance projection of mono and multi-layer silicane FETs...
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3rd international conference on Emerging Electronics, ICEE 2016
作者: Dutta, Tapas Syamalaraju, B.S. Bhowmick, Somnath Agarwal, Amit Chauhan, Yogesh Singh Department of Electrical Engineering Indian Institute of Technology Kanpur Kanpur208016 India Department of Materials Science and Engineering Indian Institute of Technology Kanpur Kanpur208016 India Department of Physics Indian Institute of Technology Kanpur Kanpur208016 India
Amongst different two-dimensional semiconductor materials, silicene is fast emerging as a promising candidate for use as the channel material in field effect transistors. In this work, we first perform ab-initio calcu... 详细信息
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Detecting imposture in mobile application  3
Detecting imposture in mobile application
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3rd international conference on Computing for Sustainable Global Development, INDIACom 2016
作者: Kadam, Monika Balasaheb Sawant, Kiran Bhausalicb Dagadu Chavan, Aditya Khedekar, Vaibhav Pandurang Ghadge, Sunil Department of Information Technology Trinity College of Engineering and Research Pune India
Many of the users use facility of play store given by Android mobile phones. Due to number of applications on play store while downloading app user checks the ratings, reviews, number of downloads and rank of the appl... 详细信息
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Accurate modeling of centroid shift in III-V FETs including non-linear potential profile and wave-function penetration  3
Accurate modeling of centroid shift in III-V FETs including ...
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3rd international conference on Emerging Electronics, ICEE 2016
作者: Singh, Deepak Kumar Dasgupta, Avirup Chauhan, Yogesh Singh Department of Electrical Engineering Indian Institute of Technology Kanpur India
A quantum mechanical model of charge centroid is presented for III-V FETs. The model takes into account the finite potential barrier at the semiconductor/insulator interface and also the non-linearity of the potential... 详细信息
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