Cemented carbides are widely used in industry as cutting tools,wear parts,as a result of the high hardness and good toughness.A reliable diffusion database is critical to simulate microstructure evolution of cemented ...
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Cemented carbides are widely used in industry as cutting tools,wear parts,as a result of the high hardness and good toughness.A reliable diffusion database is critical to simulate microstructure evolution of cemented *** 2014,we established version one of CSUDDCC1(Central South University Diffusion Database for Cemented Carbides Version one).
Luminescent compounds and materials have numerous *** emission properties,whether of a fast decay rate fluorescent material or a slow decay rate phosphorescent material,are defined by the chemical composition and the ...
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Luminescent compounds and materials have numerous *** emission properties,whether of a fast decay rate fluorescent material or a slow decay rate phosphorescent material,are defined by the chemical composition and the physical structure of the luminescent *** crystal field that is determined by the environment in the host material in combination with the various dopant ions with the correct valence state can be used to obtain emissions from the Ultra violet(UV)to the infra-red(IR)wavelength ranges.
The bright near infra-red(NIR)persistent ceramic discs of Zn2SnO4∶Cr3+,Eu3+were prepared by a solid state method and investigated in *** NIR emission(centred at 800 nm)of Cr3+is demonstrated to be enhanced by the ene...
The bright near infra-red(NIR)persistent ceramic discs of Zn2SnO4∶Cr3+,Eu3+were prepared by a solid state method and investigated in *** NIR emission(centred at 800 nm)of Cr3+is demonstrated to be enhanced by the energy transfer(ET)from Eu3+ions with the help of photoluminescence and photoluminescence excitation spectra.
Metallic titanium nitride(TiN)thin films are promising to form novel ohmic contact on wide band gap semiconduct,such as,GaN based Ⅲ-Ⅴ *** characterization techniques are employed to reveal the physical and chemical ...
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Metallic titanium nitride(TiN)thin films are promising to form novel ohmic contact on wide band gap semiconduct,such as,GaN based Ⅲ-Ⅴ *** characterization techniques are employed to reveal the physical and chemical properties of TiN thin films deposited on Si(100)substrates at different temperatures by plasma-enhanced Atomic Layer Deposition(PEALD)using TiCl4 and NH3 as the precursors.
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