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检索条件"任意字段=20th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

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20th european conference on mask technology for integrated circuits and microcomponents

20th European conference on mask technology for integrated c...

引用

20th european conference on mask technology for integrated Cirquits and microcomponents

the proceedings contains 26 papers from the 20th european conference on mask technology for integrated circuits and microcompounds. Topics discussed include: determining the transfer function of a mask fabrication process;towards systematic CD process control for e-beam lithography;optimized processes and absorber-stack materials for EUV masks;investigation of Cr etch chamber seasoning;metrological characterization of new CD photomask standards;dynamic mask defects in hot embossing lithography and predicting microfluidic response during immersion lithography scanning.

关键词： masks

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Proceedings of SPIE: 18th european conference on mask technology for integrated circuits and microcomponents

Proceedings of SPIE: 18th European Conference on Mask Techno...

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18th european conference on mask technology for integrated circuits and microcomponents 1998

this Volume 4764 of the conference proceedings contains 32 papers. Topics discussed include next generation masks, mask applications, pattern generation, materials and processes, enhanced techniques and data processin... 详细信息

关键词： integrated circuit manufacture

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Proceedings: 19th european conference on mask technology for integrated circuits and microcomponents

Proceedings: 19th European Conference on Mask Technology for...

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19th european conference on mask technology for integrated circuits and microcomponents

this Volume 5148 of the conference proceedings contains 33 papers. Topics discussed include optical proximity correction, mask industry, metrology, defect printability and repair, inspection, data flow and process aut... 详细信息

关键词： masks

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Investigation of Cr etch chamber seasoning

Investigation of Cr etch chamber seasoning

引用

20th european conference on mask technology for integrated circuits and microcomponents

作者： Nesladek, P Ruhl, G Kristlib, M Adv Mask Technol Ctr Dresden Germany

ISBN: (纸本)0819454370

One of the most critical steps for photomask CD off-target is the patterning of the mask. Here the instability of the dry etch process contributes directly to the stability of the CD value. the increasing demands on high-end masks cause a narrowing of both mask CD off-target and CD uniformity specifications, and accordingly the process stability has to be improved to fulfil these criteria. In this work we investigated the correlation between hardware parameters, basic etch process parameters and the corresponding CD mean-to-target value. Correlations between CD mean-to-target and Cr etch rate as well as effects of chamber seasoning after wet cleans are discussed.

关键词： Cr plasma etch MTT stability seasoning

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OASIS - Progress on implementing the new stream format for containing data size explosion

OASIS - Progress on implementing the new stream format for c...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Steffen, SA Kent, NB Buck, P Mentor Graphics Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819454370

the data volumes of individual files used in the manufacture of modern integrated circuits have become unmanageable using existing data formats specifications. the ITRS roadmap indicates that single layer MEBES files in 2004 exceed 200 GB threshold, worst case. OASIS, the new stream format developed under the sponsorship of SEMI, has been approved in the industry-wide voting in June 2003. the new format that on average will reduce the file size by an order of magnitude, enables to streamline data flows and provides increased efficiency in data exchange. the work to implement the new format into software tools is in progress. this paper gives an overview on the new format, reports results on data volume reduction and is a report on the status and benefits the new format can deliver. A data flow relying on OASIS as the input and transfer format is discussed.

关键词： GDSII stream OASIS integrated circuit layout mask making photomask hierarchical processing

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Dynamic mask defects in hot embossing lithography

Dynamic mask defects in hot embossing lithography

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Bogdanski, N Schulz, H Wissen, M Scheer, HC Univ Gesamthsch Wuppertal Fac Elect Informat & Media Engn Wuppertal Germany

ISBN: (纸本)0819454370

Nanoimprint was performed in very thin layers of polystyrene (PS) in order to define a mask with minimum CD loss for a subsequent etch process at minimum etching time for opening of the mask windows after imprinting. the initial polymer layer thickness was chosen as to fill the stamp cavities with nearly no surplus of polymer material. the residual layers after imprint were in the range of 50 nm and could be cleared at 50% overetch within 90 s in an oxygen RIE step. As there was not enough polymer material available for a complete filling of the cavities when a residual layer remains, filling defects occurred. High imprint temperature and thus low viscosity led to formation of deep defects in the imprint and thus the mask to be formed by embossing. Lift off experiments revealed that within the defective regions the remaining polymer layer thickness was smaller than the imprinted residual layer. In order to avoid such mask defects the imprint temperature had to be reduced.

关键词： nanoimprint hot embossing mask defects

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Contact layer printing using alternating phase-shifting masks: mask making, patterning results and production implementation

Contact layer printing using alternating phase-shifting mask...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Pforr, R Dettmann, W Eisenhut, M Hennig, M Hofmann, D thiele, J thielscher, G Infineon Technol SC300 GmbH & Co KG D-01099 Dresden Germany

ISBN: (纸本)0819454370

Contact layers of the DRAM manufacturing process can be printed well using alternating phase-shifting masks. State-of-the-art mask making tools have sufficient performance to manufacture defect free contact masks. the enlarged process window compared to conventional masks allows to shrink the contacts size or to substitute advanced scanners by older generation steppers for contact layer patterning. Using older generation exposure systems may cause problems originating in worse lens aberration performance. A method will be described how to overcome overlay problems by applying a specifically designed OL measurement target.

关键词： contacts phase-shifting masks layout conversion off-axis illumination pattern shift overlay

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Shaped beam technology for nano-imprint mask lithography

Shaped beam technology for nano-imprint mask lithography

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Hudek, P Beyer, D Groves, TR Fortagne, O Dauksher, WJ Mancini, D Nordquist, K Resnick, DJ Leica Microsyst Lithog GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Leica SB350MW 50keV shaped-beam e-beam lithography tool was used to write large-area 1X templates applicable in Step and Flash Imprint Lithography (S-FIL)(1). this paper describes how information from the pattern analysis can be used to define the ZEP7000 resist exposure optimization technique for the SB350 MW2 tool together with the Motorola template pattern transfer process(3.15) to obtain final template images in the transparent template. As a result of the complete process, well-resolved trenches measuring 33nm and contacts as small as 44nm were obtained. Further improvements in the resist patterning will be possible by an adaptation of our standard proximity corrector (currently used in the 90nm node maskmaking) with a high resolution upgrade.

关键词： nano-imprint shaped beam mask template proximity correction

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Optimized processes and absorber-stack materials forEUV masks

Optimized processes and absorber-stack materials forEUV mask...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Mathuni, J Rau, J Kamm, FM Ruhl, G Holfeld, C Letzkus, F Köpernik, C Butschke, J Infineon Technol D-81541 Munich Germany

ISBN: (纸本)0819454370

Currently, EUV lithography targets for sub-50 nm features. these very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New material combinations for absorber and buffer layer of EUV masks have to be evaluated and fundamental material limits have to be overcome. We report on optimized absorber-stack materials and compare in particular the performance of chrome and tantalum nitride for such small nodes. Tantalum nitride shows similar or even better properties than standard chrome, above all with respect to etch bias. Further investigations have to be done but this material is a promising candidate for feature sizes in the sub-50 nm range.

关键词： EUV lithography mask tantalum nitride etching etch bias etch uniformity

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the impact of EUV mask defects on lithographic process performance

The impact of EUV mask defects on lithographic process perfo...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Evanschitzky, P Erdmann, A Fraunhofer Inst Integrated Syst & Device Technol D-91058 Erlangen Germany

ISBN: (纸本)0819454370

As the options for experimental studies are still limited, a predictive simulation of EUV lithography (extreme ultraviolet lithography) is important for a better understanding of the technology. In particular, the simulation of defective EUV masks is a fundamental task because of the significant impact of certain defects on the lithographic process. the description of such a defective mask is one of the most critical issues for the modeling of EUV lithography. A new model for the simulation of defects inside the multilayer of an EUV reflective mask, developed at Fraunhofer IISB, is used for the presented study. the model consists of a combination of a rigorous electromag-netic field (EMF) computation and an analytical thin film computation. Compared to other methods, such as fully rigorous EMF simulations, this new approach leads to a significant reduction of computation time and memory requirements. the model can be applied to two and three dimensional defects and masks. this paper will present a detailed study of the impact of EUV mask defects on the near fields, the aerial images, and the process windows. Typical mask structures, e. g. 3D contact holes and 2D lines with various defects, are investigated. Defect parameters, such as the defect position with respect to the main feature to be imaged, the defect height, the defect FWHM (full width at half maximum), and the number of compressed layers inside the multilayer are varied. the important defect parameters and their critical ranges are identified using the new simulation method. the impact of these parameters on the image CD and the image position are demonstrated.

关键词： EUV mask multilayer defects lithography simulation

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