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20th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunihofer Inst Photon Mikrosyst IPMS D-01109 Dresden Germany

ISBN: (纸本)0819454370

After the early mask making during the 1960's in Dresden has been discussed at the 19(th) EMC now the view is focused to the further mask making efforts in Dresden, where the leading East German labs for research and development of microelectronics had been located. the mask making processes developed continuously, but one can recognize some different periods. First a three-stage process realized artwork originals - reticles - masks. then a two-stage process realized reticles - masks. In the end a one-stage process realized only the reticles which were applied to the wafers by means of a waferstepper. technology and equipment of the mask processes were developed in cooperation with other East German companies such as Carl Zeiss Jena. Some examples for microlithographic equipment are given. Finally, late in the 1980's, a high technology equipment existed in Dresden which met the microlithographic challenges of a Megabit DRAM technology: chip size of about 13 nun x 5 mm, minimum features of about 1 mum. mask making occured with the e-beam writer ZBA21, mask application was carried out with the waferstepper AUR. the specific parameters are listed and the arrangement of the chip design (1MbitDRAM chip U61000) on the reticle is discussed with respect to the image field conditions. Some pictures show the ground plan of the reticles and the reticle masks, which were made on chromium coated glass blanks 125 mm x 125 mm.

关键词： microelectronics artwork mask making Eastern Bloc history

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Measurement results on after etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system

Measurement results on after etch resist coated features on ...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Whittey, J Steinberg, W Leica Microsyst Inc Oakdale CA 95361 USA

ISBN: (纸本)0819454370

Process control in photomask manufacturing is crucial for improving and maintaining optimal yields. the LWM270DUV critical dimension (CD) measurement system is the first tool ever designed for photomask manufacturers that combines both UV (365 nm wavelength light) and DUV (248 nm wavelength light) for CD measurements. UV light illumination was integrated into the LWM270 DUV to allow photomask makers to perform after etch inspection (AEI) on DUV resists minimizing exposure effects. the increased resolution of UV illumination allows for measurement of features as small as 300 nm. Improved measurement algorithms as well as improvements in the illumination system have reduced the uncertainty of measurements resulting in improved performance. this paper details recent measurement results of various feature types on different substrate types using UV transmitted light.

关键词： Photomasks Ultraviolet radiation Critical dimension metrology Deep ultraviolet Microsystems Etching Manufacturing Inspection integrated circuits Optical testing

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Effect of electrostatic chucking on EUVL mask flatness

Effect of electrostatic chucking on EUVL mask flatness

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Mikkelson, A Engelstad, R Lovell, E Aschke, L Rüggeberg, F Sobel, F Computat Mech Ctr Madison WI 53706 USA

ISBN: (纸本)0819454370

the International technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. the SEMI EUVL mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. the FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). the flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. the results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

关键词： EUV lithography electrostatic chucking finite element analysis mask flatness

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Avoidance reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z

Avoidance reduction of charging effects in case of partially...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Plontke, R Bettin, L Beyer, D Butschke, J Irmscher, M Koepernik, C Leibold, B Vix, A Voehringer, P Leica Microsyst Lithog Jena Germany

ISBN: (纸本)0819454370

the aim is to apply e-beam lithography for second level imaging of Alternating Phase Shift masks (altPSM) in the 65nm node and below. Difficulties due to charging effects arise when exposing areas where the chromium absorber has been cleared away. In order to achieve correct pattern placement, the commercial water-soluble conductive ESPACER 3002 top coat from Showa Denka is applied in combination with chemically amplified resist of type FEP171. the paper describes the method and algorithm to test the efficacy of the material and the technological steps taken to avoid or reduce charge effects. the obtained overlay accuracy proves the ESPACER/FEP171 combination a promising approach for future altPSM manufacturing.

关键词： alternating phase shift mask second level imaging charging electron beam exposure chemically amplified resist

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Experience with EFQM assessment at Siemens mask shop

Experience with EFQM assessment at Siemens mask shop

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Reindl, W Steuber, S Siemens AG D-8000 Munich Germany

the EFQM Management Self-Assessment was applied to mask manufacturing and was found to be the driving process for business improvements at the mask shop. It offered an opportunity to learn about the organisation's... 详细信息

ISBN: (纸本)0819431397

关键词： european Foundation of Quality Management (EFQM) continuous improvement process management self-assessment business excellence organisation performance key processes mask shop mask manufacturing

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Production challenges of making an EUV mask blank

Production challenges of making an EUV mask blank

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Aschke, L Becker, H Friemel, F Leutbecher, T Olschewski, N Renno, M Rüggeberg, F Schiffler, M Schmidt, F Sobel, F Walter, K Hess, G Lenzen, F Knapp, K Schott Lithotec AG D-98617 Meiningen Germany

ISBN: (纸本)0819454370

mask Blanks for EUV Lithography require a lot of new properties and features compared to standard COG blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilayer coatings for EUV reflection, buffer layers, up to new absorber layers with improved dry etching and inspection properties. this papers introduces in the special features of Low thermal Expansion Materials (LTEM), their manufacturing and the special metrology for the Coefficient of thermal Expansion (CTE). We will look into some details of polishing methods for much better flatness of the substrates. the process and the metrology of low defect EUV multilayer coatings will be elucidated and some aspects of this will be explained in detail. In addition we will present new results from no-chrome alternative absorber materials.

关键词： Extreme ultraviolet Photomasks Multilayers Extreme ultraviolet lithography Zerodur Reflectivity Polishing Glasses Surface finishing Temperature metrology

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Early mask making during the 1960's in Dresden

Early mask making during the 1960's in Dresden

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Becker, HW Fraunhofer Inst Photon Mikrosyst IPMS Dresden Germany

ISBN: (纸本)0819450189

One of the first european institutes for microelectronics, the Arbeitsstelle fur Molekularelektronik Dresden AME, was founded in 1961 by WERNER HARTMANN. the purpose was to develop processes for fabrication of integrated circuits. Concerning microlithography at first a five-stage mask technique was used since 1965. the artwork original which was called "Vorlage" was cut with a scale of about 200:1. Using a reduction camera the artwork original was reduced about 20 times, to get the reticle known as the "Zwischennegativ". this reticle was then further reduced about 10 times by "step and repeat", using a projection microscope, to get a master mask known as the "Originalschablone" whose scale was then 1: 1. By direct photocopying of the master mask one obtained a working mask which was called the "Arbeitsschablone". Finally, an aligned direct exposure of the working mask on to a wafer created, layer by layer, the micro-pattern of the chip array. Concerning the materials a double layer film was used for the artwork originals, and 2 inch photographic plates were used for the reticles and masks. In this way the first East German bipolar integrated circuits, NOR gates with 8 transistors, were made in Dresden in 1967. this was done with 4 masking levels on 25 mm Si wafers with 1.5 mm chip size and 20 mum minimal figure width (critical dimensions). In the late 1960's some improvements were introduced, particularly the 6-barrel semi-automatic photorepeater, which improved the figure width and gave lower tolerances. the largest chip made in 1969 was a J-K master-slave flipflop, this contained 36 transistors on a chip 1.6 mm x 1.8 mm and was done with 9 masking levels and with 10 mum minimal figure width.

关键词： Photomasks Reticles mask making Photography integrated circuits Microscopes Semiconducting wafers Cameras Transistors Microelectronics

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Experience with EFQM assessment at Siemens mask shop

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 150-165页

作者： Reindl, Werner Steuber, Siegfried Siemens AG Munich Germany

the european Foundation of Quality Management (EFQM) self-assessment is a comprehensive, systematic and regular review of an organization's activities and results referenced against a model of business excellence. the self-assessment process allows the organization to discern clearly its strength and areas in which improvements can be made and culminates in planned improvement actions which are then monitored for progress. the EFQM self-assessment was applied to mask manufacturing and was found to be the driving process for business improvements at the mask shop. It offered an opportunity to learn about the organization's strength and especially the areas where improvement was necessary.

关键词： Total quality management

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mask definition by nanoimprint lithography

Mask definition by nanoimprint lithography

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Lyebyedyev, D Scheer, HC Univ Gesamthsch Wuppertal Dept Elect & Informat Engn D-42119 Wuppertal Germany

ISBN: (纸本)0819440396

mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 mum were produced in the polymer layer by nanoimprint. Optimisation of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

关键词： Polymers Nanoimprint lithography Oxygen Photomasks Reactive ion etching Etching Scanning electron microscopy Lithography Plasma Dry etching

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through the looking glass: What is on the horizon for the mask Maker?

Through the looking glass: What is on the horizon for the Ma...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Mackay, RS Eynon, BG Mathur, DP Photron Inc Austin TX 78728 USA

ISBN: (纸本)0819450189

the future of mask industry technology is in flux. While the requirements for current and near-term lithographic capability is well understood, advanced lithography options pose a completely new set of challenges to the mask maker. Challenges are not only process and materials related, but also include more fundamental concerns dealing with how to afford the necessary capability development. this paper identifies the issues and attempts to propose solutions to the industry's growing concerns.

关键词： Photomasks Manufacturing Lithography Extreme ultraviolet lithography Glasses mask making Pellicles Inspection Optical lithography Semiconducting wafers

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