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检索条件"任意字段=20th European Conference on Mask Technology for Integrated Circuits and Microcomponents"

共 100 条记录，以下是21-30 订阅

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Charged particle beam induced processes and its applicability to mask repair for next generation lithographies

Charged particle beam induced processes and its applicabilit...

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP T Nova Deutsch Telekom Technologiezentrum Darmsta D-64295 Darmstadt Germany

ISBN: (纸本)0819440396

A comparison of the achievements of charged particle beam induced processes as published is evaluated to judge on the applicability of this technology for Next Generation Lithography mask repair. Methods for repair of defects of different types on different masks are reviewed. this compares the achievements of ion beam technologies as well as of electron beam technologies. With these techniques the properties of the deposited materials for open defect repair can be selected using different precursors, currents, temperatures and voltages for the deposition process. Very high resolution is achievable. For opaque defects the etching and trimming of a surplus of absorber or scattering material with electrons or ions is compared.

关键词： Ion beam lithography

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Aerial image measurement technique for today's and future 193nm lithography mask requirements

Aerial image measurement technique for today's and future 19...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Zibold, AM Scherübl, T Menck, A Brunner, R Greif, J Carl Zeiss SMS GmbH D-07745 Jena Germany

ISBN: (纸本)0819454370

the Aerial Image Measurement System (AIMS(TM) [1]) for 193 nm lithography emulation has been brought into operation worldwide successfully. Adjusting optical equivalent settings to steppers/scanners the AIMS(TM) system for 193nm allows to emulate any type of reticles for 193nm lithography. the overall system performance is demonstrated by AIMS(TM) measurements at 193 nm wavelength on binary chrome masks and phase shift masks. Especially for evaluation of 65nm node lithography performance process window results will be discussed. An ArF excimer laser is in use for illumination. therefore a beam homogenizer is needed to reduce the speckles in the laser beam and ensure a similar illumination uniformity as the longer wavelength systems, 248nm and longer, using an arc source. A new beam homogenizing technique will be presented and illumination results compared to the current solution. the latest results on enhanced illumination uniformity exceed the current performance. A newly develop hybrid objective for high resolution imaging is tested for use of high resolution imaging in order to review defects and investigate repairs which do not print under stepper equivalent optical settings. An outlook will be given for extension of 193nm aerial imaging down to the 45nm node. Polarization effects will be discussed.

关键词： Photomasks Lithography Image resolution Objectives 193nm lithography Beam homogenizers Lithographic illumination Polarization Reticles Semiconducting wafers

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Semi-transparent isolated defects detection by die to database mask inspection using virtual scanning algorithms for subpixel resolution

Semi-transparent isolated defects detection by die to databa...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM PLANAR KBTEM OMO Design Off Precis Elect Machine Bldg Minsk 220763 BELARUS

ISBN: (纸本)0819454370

the paper presents the description of the new Virtual Scanning Algorithms (VSA), providing sub-pixel resolution. VSA are the algorithms developed specially for EM-6029B (Fig. 1) and EM-6329 (Fig. 2) die-to-database reticle and photomask inspection systems of "Planar" concern (KBTEM-OMO). For the providing of the effective building in of these algorithms to the inspection system, has being created the special two-levels dynamic model of optical image. the paper presents also the building principles of this model. this model allows, on the one hand, to perform the precise alignment of optical image (collected from the reticle) wit a reference image (generated from the design data), and on the other hand - to perform the analysis of optical image to get optimum mutual position of the digitization grid of the inspection system and detected defects position. VSA calculate the second level of this model. Both the VSA and the second level of dynamic model of optical image are presented the Virtual Scanning sub-System (VSS). VSS allows to increase the detection capability of automatic reticle inspection system by means of achievement sub-pixel resolution. the paper shows, that during the detection of semi-transparent defects, VSA allow, in particular, to get maximum available amplitude contrast of the CCD-signals on the image model. Accordingly, VSA allow also the inspection system to work without using maximum sensitivity settings with the same detection capability. As a result is the reduction of the risk of false or nuisance defects detection, while keeping maximum sensitivity to printable defects. the VSS design and in-house test results are discussed.

关键词： Defect Inspection reticle semi-transparent defect Virtual Scanning Algorithm

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mask CD uniformity impact during incoming quality control

Mask CD uniformity impact during incoming quality control

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Villa, E Baracchi, E Rosenbusch, A Har-zvi, M Gottlib, G STMicroelect I-20041 Agrate Brianza MI Italy

ISBN: (纸本)0819445312

the paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS(TM)21i die-to-database mask inspection system, for incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by comparing it's quantitative results with CD measurements. masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared.

关键词： Photomasks Critical dimension metrology Semiconducting wafers Inspection Reticles Control systems Metrology Quality systems Wafer inspection Cadmium

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Monitoring strategy to match the advanced fabs

Monitoring strategy to match the advanced fabs

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Ackmann, PW Adv Mask Technol Ctr D-013330 Dresden Germany

ISBN: (纸本)0819454370

the reduction in feature size below the exposure wavelength, the requirement for high yields, the expectation for consistent cycletime and shipment to mix, all mean that the reticle industry must be like advanced wafer fabrication centers. Due to the lower output of write tools versus steppers, and the fact that a reticle is a lot of one instead of 25 or 50 wafers as well as the need to match ship date to Fab ramp, the reticle line monitoring strategy must be optimized for small sample size. the use of tool time and alternative inspection strategies can lead to the early detection of problems. Because every reticle is a customer specific design, the monitoring strategy takes on a new look compared to the Fab. We have organized the AMTC to resemble a wafer fab. We have a dedicated Integration group that works with the customers and technologists, to monitor the needs of the customers and then drive the development programs that improve reticle capability. We have a dedicated yield team to identify and classify the yield loss mechanisms and define probable causes. the teams then work with the Process owners to fix the source of yield loss and track the corrective actions. All sources of variations must be modeled and then sources of errors reduced to levels below the tool specification. the manufacturing organization has all the process and tool experts to focus on Pilot Line and Development tasks to meet the advance needs of our customers. With the organization in place we can then develop the methods based on Reticle and Fab manufacturing to best control the line and provide development with manufacturing cycle times.

关键词： Photomasks Reticles Manufacturing Etching Semiconducting wafers Optical proximity correction Inspection Critical dimension metrology Process control Control systems

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Hierarchical mask data preparation and special fracturing techniques in MGS

Hierarchical mask data preparation and special fracturing te...

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15th european conference on mask technology for integrated circuits and microcomponents

作者： Bürger, B Bätz, U Kunze, K Wolf, H Fraunhofer IMS Dresden Germany

ISBN: (纸本)0819431397

MGS is a layout postprocessor software including a fracturing engine for Leica's ZBA e-beam writers. With the ZBA series including the new ZBA300 and its ability to write submicrometer masks for advanced technologies two main tasks have to be mastered in data preparation: 1. Processing of large and dense layouts. 2. Contribution to increased mask quality by optimized fracturing. these challenges are not restricted to the ZBA tools only;on the contrary they are of general interest for data preparation.

关键词： Magnesium Photomasks Algorithm development Edge roughness integrated circuit design integrated circuits Liquid crystals Lithography Sensors Structural design

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Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool

Inspection of alternating PSM reticles using UV-based 365 nm...

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Rosenbusch, A Har-zvi, M Gottlib, G Etec Syst Inc Appl Mat Co Hayward CA 94545 USA

ISBN: (纸本)0819445312

the paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.

关键词： phase shift mask 248 nm AAPSM i-line inspection mask inspection reticle enhancement technique (RET)

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Measures to achieve 20-nm IPL stencil mask distortion

Measures to achieve 20-nm IPL stencil mask distortion

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Haugeneder, E Chalupka, A Lammer, T Loeschner, H Kamm, FM Struck, T Ehrmann, A Kaesmaier, R Wolter, A Butschke, J Irmscher, M Letzkus, F Springer, R IMS Nanofabricat GmbH Vienna Austria

ISBN: (纸本)0819445312

From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching process. By means of FE analysis the different contributions may be classified. Some of the errors can be reduced if more stringent specifications of the SOI wafer are fulfilled, some of them may be reduced after pre-calculation. Reduction of the remaining placement errors can be achieved if specific means of an Ion Projection Lithography (IPL) tool are applied. these are mainly magnification and anamorphic corrections removing so-called global distortions. the remaining local distortions can be further reduced by applying the concept of thermal mask adjustment (thEMA).

关键词： Photomasks Semiconducting wafers Distortion Silicon Ion beams Electrodes Ions Wafer bonding Manufacturing Projection lithography

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Inspecting alternating phase shift masks by matching stepper conditions

Inspecting alternating phase shift masks by matching stepper...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Hemar, S Rosenbusch, A Etec Syst Mask Business Grp IL-76705 Rehovot Israel

ISBN: (纸本)0819450189

the paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. the inspection methodology used is aerial imaging. Phase effects are taking into account inherently. the main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. the paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation.

关键词： aerial-image based mask inspection AAPSM OPC 193nm technology at-wavelength inspection

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mask availability for next-generation lithography

Mask availability for next-generation lithography

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Lercel, MJ Fisch, E Racette, KC Lawliss, M Williams, CT Kindt, L Huang, C IBM Corp Photron NGL Mask Ctr Competency Essex Jct VT 05452 USA

ISBN: (纸本)0819445312

the Next Generation Lithography (NGL) mask Center of Competency (MCoC) has been developing mask technology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in both the membrane and reflective mask formats. the mask technology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. this information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we disucss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.

关键词： Photomasks Inspection Extreme ultraviolet lithography Lithography X-rays Chromium Etching Image processing Multilayers Reflectivity

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