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Initial results from a Leica ZBA 31H+ shaped e-beam mask writer located at the Photronics Advanced mask Shop in Manchester, England

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 63-68页

作者： Johnson, Stephen Marshall, Paul Osborne, Peter Doering, Hans-Joachim Ehrlich, Christian Ltd Manchester United Kingdom

the ZBA 31H+ is a variable shaped spot, vector scan electron beam lithography system operating at 20 keV. Enhancements from the previous generation system include improved deflection systems, stage metrology, pattern data handling, and an address grid down to 10 nanometers. the system's specified performance enables it to produce reticles designed to support semiconductor fabrication utilizing 250 nanometer design rules and beyond, with high accuracy and productivity. the initial results from the Leica ZBA 31H+ shaped electron beam mask writer located at the Phototronics Advanced mask Shop in Manchester, England are presented.

关键词： Electron beam lithography

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Determining the transfer function of a mask fabrication process

Determining the transfer function of a mask fabrication proc...

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20th european conference on mask technology for integrated circuits and microcomponents

作者： Leunissen, LHA Philipsen, V Jonckheere, R IMEC VZW B-3001 Louvain Belgium

ISBN: (纸本)0819454370

A mask making process is the result of data preparation (e.g., bias), patterning and etch. the effect of these steps can be simulated starting from a circuit design. the purpose of this paper is to determine the transfer function for a production flow of a mask, describing the transition from the design to the finished reticle. the simulation results will be compared with actual measurements. 1D measurements of a mask, as shown for example in Ref. [1], provide a lot of useful information. the fingerprint that a writing tool leaves on the experimental result actually makes it possible to determine if the reticle is produced with an e-beam writer or an optical laser tool. From the deviations from the nominal value the "effective" spot size of the laser tool can be determined. In case an e-beam writer is used, the performance of the e-beam proximity correction in use becomes apparent. the mean-to-target offset can be resolved if no data biasing is performed. From SEM pictures of the reticle the 2D corner rounding effects can be determined from the combined influence of the spot size, scattering (in case of an e-beam writer) and data biasing. Global sizing can be resolved from 2D measurements. If the pattern bias is performed for each individual feature it is included in the rounding. Sufficient data about sizing, etch bias and spot size can be obtained if SEM pictures are taken from several critical sites on the reticle. For example, dense lines/spaces or contacts/dots constitute the minimum objects to be printed. Recent reticles ordered at IMEC include a monitor structure. Among other features, this performance monitor contains dots and contact holes with sizes between 90 nm and 250 nm with additional serifs at the corners. the serifs have sizes of 1040 nm in 10 nm steps. All feature sizes are specified at 1x unless otherwise indicated. they are extending multiples of 10 nm from the corner position. In our work we assessed the integrity of varying serifs on dots and c

关键词： reticle quality printability mask transfer function reticle 2D quality proximity effect

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Integration of mask R&D and mask manufacturing to support the european semiconductor industry

Integration of mask R&D and mask manufacturing to support th...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Dilger, M AMTC Adv Mask Technol Ctr D-01330 Dresden Germany

ISBN: (纸本)0819450189

the increasing gap between microelectronics minimum feature size and the exposure wavelength is a key challenge to the semiconductor industry. In the last 3 to 5 years mask technology has become a key contribute to bridge the sub wavelength gap. In particular optical enhancement technologies like Phase Shift masks (PSM) technologies and Optical Proximity Correction (OPC) methods have become widely used tools to improve optical imaging. However the use of these technologies has increased the complexity of mask making. In particular control of the critical dimension (CD) and defect control including defect inspection face new challenges for advanced Phase Shift masks. Inline with the increasing technology requirements the investment in mask technology is continuous increasing for a smaller volume of high end products which can afford costs of above 1 Mio. US $ for a mask set. therefore new concepts are required to support semiconductor manufacturers with advanced, customer specific photomasks at reasonable costs. the Advanced mask technology Center (AMTC) concept was therefore jointly developed by the three partners Advanced Micro Devices (AMD), DuPont Photomask (DPI) and Infineon Technologies (Infineon) for this purpose. the paper outlines the vision, the plans and the current status of the AMTC.

关键词： Photomasks Semiconductors Manufacturing Microelectronics Critical dimension metrology Lithography mask making Optical proximity correction Phase shifts Semiconducting wafers

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High precision mask repair using nanomachining

High precision mask repair using nanomachining

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Verbeek, M White, R Klos, M Infineon Technol AG Munich Germany

ISBN: (纸本)0819445312

Nanomachining has recently been introduced as a new option for the repair of photomasks. the RAVE nm1300 system is a high precision system for subtractive removal of opaque mask defects. the first such system was installed at the Infineon mask House in Munich, Germany. this paper presents the results of the acceptance testing. Programmed pattern defects on binary chrome on glass masks, alternating phase shifting masks and both 248nm and 193nm halftone phase shifting masks were used for these tests. Some examples of carbon patch trimming, sequential defect removing as well as repairing of "non-removable" particles and irregularly shaped quartz bump defects demonstrate the unique capabilities of the tool.

关键词： Quartz Phase shifting Carbon Photomasks Particles Opacity Atomic force microscopy Binary data Glasses Scanning electron microscopy

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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mask technologies for deep X-ray LIGA

Mask technologies for deep X-ray LIGA

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Singleton, L Detemple, P Inst Mikrotech Mainz GmbH D-55129 Mainz Germany

ISBN: (纸本)0819450189

masks for LIGA applications requiring deep X-ray lithography have different specifications compared to those masks used in microelectronic applications. Generally, deep X-ray LIGA applications require resist heights greater than 100 mum, whereas accurate pattern transfer in this depth of resist is obtained by using highly parallel synchrotron radiation beam from storage rings in the lithography. Given the unusual nature of the lithography, the requirements for the mask blank and the absorber structures are quite different from those used in optical lithography. this paper discusses different approaches to mask making, and weighs up the advantages and disadvantages of the different approaches. In particular, emphasis will be placed on the changes in critical dimensions and sidewall roughnesses in the resist structures produced by the different mask technologies.

关键词： LIGA deep X-ray lithography DXRL PMMA optical components waveguides moulding

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Ion projection lithography - progress in mask and tool technology

Ion projection lithography - progress in mask and tool techn...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ehrmann, A Kaesmaier, R Struck, T Infineon Technol D-81541 Munich Germany

ISBN: (纸本)0819436143

Ion Projection Lithography is one of the major competitors for sub 100nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained. the exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to be presented. mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.

关键词： ion beam lithography stencil mask placement

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Defect printability and repair of alternating phase shift masks

Defect printability and repair of alternating phase shift ma...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Friedrich, C Verbeek, M Mader, L Crell, C Pforr, R Griesinger, UA Infineon Technol D-81609 Munich Germany

ISBN: (纸本)0819436143

this paper will start with an overview of the different defect types which can occur on alternating phase shifting masks. A test mask with programmed defects of these different types was fabricated. the defect printability was investigated using an AIMS system. these results were correlated to first printing results in the wafer-fab. the results give an overview of the requirements for an inspection and repair system for alternating phase shifting masks. In order to get a better understanding of this printability behaviour first simulations of defects using a 3-D mask simulation tool were carried out and compared to the measurements. Several examples of quartz-repairs with different qualities are presented together with the influence on the aerial image.

关键词： alternating phase shift mask defect printability repair

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

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19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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mask CD characterization with EUV reflectometry at the electron storage ring BESSY II

Mask CD characterization with EUV reflectometry at the elect...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Ehrmann, A Rau, J Wolter, A Kamm, FM Mathuni, J Scholze, F Tümmler, J Ulm, G Infineon Technol AG Munich Germany

ISBN: (纸本)0819450189

CD metrology requirements have increased dramatically within the last years. For the coming technology generations, it is not clear which CD measurement method will be standard for mask manufacturing. An interesting approach is to use the diffracted signal of periodic mask patterns for determination of CD. For wafer CD measurement, CD scatterometry tools using visible or UV wavelengths are already commercially available. For this experiment, diffracted EUV light was used. Dense lines of pitches 1:1, 2:1 and 5:1 and nominal CDs of 150 run, 200 nm, 300 nm, 400 nm and 500 run have been illuminated with EUV light of lambda = 13.35 nm the BESSY II storage ring in Berlin. the reflected signal has been collected with a movable detector in a range of -1degrees to 20degrees relative to the specular reflection. With the angular position of the peak, the pitch can be calculated. the CD, however, is related to the intensity of the peaks. Several effects as mask topography and measurement uncertainties are discussed. the results are compared to CD-SEM measurements of the same patterns.

关键词： Extreme ultraviolet Reflectivity Compact discs Photomasks Scanning electron microscopy Diffraction Scatterometry Sensors Cadmium Computer simulations

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