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19th european conference on mask technology for integrated circuits and microcomponents

作者： Schulze, S LaCour, P Rodriguez, N Mentor Graph Corp Wilsonville OR 97070 USA

ISBN: (纸本)0819450189

As design rules shrink aggressively while the wavelength reduction in the exposure equipment cannot keep up, extensive usage of resolution enhancement techniques (RET) has complicated the generation and handling of mask writing data. Consequently, file size growth and computing times for mask data preparation rise beyond feasibility. In order to address these issues, an integrated flow has been developed. It starts out with the gds-file delivered by the backend of design and combines optical proximity correction, design rule and mask process rule verification, and all other necessary steps for mask data preparation into a single flow. the benefits of this strategy are time savings in data processing and handling, the elimination of intermediate files, and the elimination of data format interface issues. Since the new flow takes full advantage of the design hierarchy, file sizes shrink considerably and the whole data preparation infrastructure can be simplified. the paper will describe the transition to the new flow and quantify the benefits.

关键词： Photomasks Optical proximity correction Resolution enhancement technologies Databases Manufacturing Data storage Etching Interfaces Optical design Process modeling

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Method to determine a detection capability of the die-to-database mask inspection system in regard to pinhole and pindot defects

Method to determine a detection capability of the die-to-dat...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Avakaw, SM Opto Mech Equipment Design Off Precis Elect Tools Bldg Minsk BELARUS

ISBN: (纸本)0819450189

the paper presents a description and results of the use of a new method to determine a capability to detect defects such as pinholes and pindots in order to test reticle and photomask inspection systems EM-6029B and EM-6329 using a die-to-database comparison method. In the introductory part given are the reasons for the necessity to determine a probability to detect defects with sizes smaller than the tool detection threshold, as well as given are the grounds for the necessity to precisely determine a scope of tests required to determine this probability. In the main part presented is a method of testing the equipment with the purpose to determine a probability to detect defects such as a pindot and a pinhole, including a procedure to estimate a required number of experiments to verify the probability to detect features of different sizes with a given confidence coefficient.

关键词： inspection reticles detection probability

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mask fabrication by nanoimprint lithography using anti-sticking layers

Mask fabrication by nanoimprint lithography using anti-stick...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Schulz, H Osenberg, F Engemann, J Scheer, HC Univ Gesamthsch Wuppertal Wuppertal Germany

ISBN: (纸本)0819436143

We have studied anti-sticking layers for nanoimprint lithography using different types of polymers, thermoplastic and thermosetting ones. Typically thermosetting polymers have higher mask selectivity in a fluorocarbon dry etch process than the thermoplastic polymers, but replication into these materials is much more complicated. We observe a high tendency for the polymer to adhere to the stamp. To minimize the sticking problem a fluorocarbon coating of the stamp was tested. It was deposited in a radio frequency plasma reactor with C4F8 as a feed gas. the thickness of the coating was several nm. It was characterised by contact angle measurement, XPS and FTIR analysis. Such coatings could successfully reduce sticking effects during an imprint process.

关键词： nanoimprint lithography (NIL) anti-sticking layer plasma deposition

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Electron beam mask repair with induced reactions

Electron beam mask repair with induced reactions

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Koops, HWP Edinger, K Bihr, J Boegli, V Greiser, J NaWoTec GmbH (Germany) LEO Elektronenmikroskopie GmbH (Germany)

ISBN: (纸本)0819450189

Electron-beam induced chemical reactions and their applicability to mask repair are investigated. For deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. this material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. the tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz, TaN. and silicon carbide stencil masks are given.

关键词： Photomasks Electron beams Etching Interferometers Platinum Charged-particle lithography Control systems Quartz Scanning electron microscopy Silicon carbide

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Hierarchical mask data preparation and special fracturing techniques in MGS

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Proceedings of SPIE - the International Society for Optical Engineering 1999年 3665卷 135-136页

作者： Buerger, B. Baetz, U. Kunze, K. Wolf, H. Fraunhofer IMS Dresden Germany

MGS is a layout postprocessor software including a fracturing engine for Leica's ZBA e-beam writers. In MGS, a new hierarchy called output hierarchy, is automatically built from the design hierarchy as it is found in the input layout file. In all hierarchical levels of the layout input is looked for candidates to be transferred to the output hierarchy. Criteria for structure selection are, number of calls, use in array calls and dimension of structure. the goal is to achieve a 1-level output hierarchy of all disjunctive structures where one structure has the same environment at all positions where it is called.

关键词： integrated circuit layout

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Use of nanomachining for 100 nanometer mask repair

Use of nanomachining for 100 nanometer mask repair

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19th european conference on mask technology for integrated circuits and microcomponents

作者： LoBianco, B White, R Nawrocki, T RAVE LLC (United States)

ISBN: (纸本)0819450189

Nanomachining has recently been introduced as a new technology for subtractive repair of 130-nanometer masks. the RAVE LLC nm 1300 utilizes this innovative strategy, facilitating repairs of all materials currently used in mask production. this technology has allowed 130-nanometer mask repair specifications to be met. this paper introduces nanomachining as a method of repairing next generation 100-nanometer masks. Emphasis will be given to materials and designs that provide significant challenges to current industry repair techniques;specifically quartz bumps on alternating phase shift masks and repairs within tight lines and spaces. Several advantages will be demonstrated, including the ability to machine within high aspect ratio features, the capability to duplicate edge slope, superior edge placement control, quartz bump repair, and transmission values approaching defect-free areas. this paper will compare performance to the SIA roadmap requirements for 100-nanometer mask repair using RAVE LLC'S next generation system, the nm 1000.

关键词： Photomasks Quartz Image processing Phase shifts Atomic force microscopy Binary data Cryogenics Glasses Head Navigation systems

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Optimization of the e-beam sensitive bilayer CARL process for stencil mask making

Optimization of the e-beam sensitive bilayer CARL process fo...

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16th european conference on mask technology for integrated circuits and microcomponents

作者： Ochsenhirt, J Butschke, J Letzkus, F Höfflinger, B Irmscher, M Reuter, C Springer, R Elian, K IMS Chips D-70569 Stuttgart Germany

ISBN: (纸本)0819436143

Hardmask-less stencil mask making requires resist masks with a high aspect ratio. the bilayer CARL (chemical amplification of resist lines) process was evaluated and optimized with respect of generating irregular resist features below 180nn in a film thickness of 750nm. Especially the dry development was detailed investigated using statistical design and analysis of experiment. Processed CARL resist masks are compared with Top Surface Imaging (TSI) results. Finally, results of a deep silicon etching process using the CARL resist masks are presented.

关键词： Silicon Photoresist processing Photomasks Etching mask making Tin Line edge roughness Plasma Critical dimension metrology Statistical analysis

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mask strategy at international SEMATECH

Mask strategy at international SEMATECH

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18th european conference on mask technology for integrated circuits and microcomponents

作者： Kimmel, KR Int SEMATECH Austin TX USA

ISBN: (纸本)0819445312

International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for it member companies to realize the International technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. the largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. the development strategy at International SEMATECH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

关键词： mask photomask mask cost lithography cost International SEMATECH

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130 nm node mask development

130 nm node mask development

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17th european conference on mask technology for integrated circuits and microcomponents

作者： Chabala, JM Weaver, S Alexander, D Lu, MY Kim, NW Cole, D Etec Syst Inc Hayward CA 94545 USA

ISBN: (纸本)0819440396

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small-pattern fidelity is one of the most challenging tasks in maskmaking. the research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD uniformity, CD linearity, small-feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBES(R) 5500 system, all experiments are performed with ZEP 7000 resist, 10 muC/cm(2) dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). these results are instructive for improved 130 nm node lithography and 180 nm node productivity.

关键词： electron beam photomask multipass gray MPG MPG-II GHOST CD uniformity

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the compact excimer laser-light source for optical (mask) inspection systems

The compact excimer laser-light source for optical (mask) in...

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19th european conference on mask technology for integrated circuits and microcomponents

作者： Pflanz, T Huber, H TuiLaser AG D-82166 Munich Germany

ISBN: (纸本)0819450189

the discharge pumped excimer laser is a gas laser providing ultra violet (UV) radiation with well defined spectral, temporal and spatial properties. the fast development of excimer lasers in recent years has succeeded in designing very compact, turn-key systems delivering up to 10 W of radiation at 248 nm (5 W at 193 run and 1 W at 157 nm) with repetition rates up to 1000 Hz [1]. Experimental data on important beam properties of excimer lasers in the field of mask inspection are being presented and discussed. Relevant parameters are spectral bandwidth, energetic pulse-to-pulse stability, pulse duration, beam pointing stability, beam direction stability, beam dimension, beam profile and coherence. We will compare the excimer laser with lamp sources and continuous wave (CW) lasers in the framework of these parameters. the discussion will show future opportunities of compact excimer lasers in optical inspection as well as in mask writing systems, improving resolution and throughput.

关键词： masks

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