The design of systems to replicate complex neural functionality is a requirement for the development of next-generation prosthetic devices. The demands of such neural models are growing exponentially as we discover mo...
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The design of systems to replicate complex neural functionality is a requirement for the development of next-generation prosthetic devices. The demands of such neural models are growing exponentially as we discover more about how brain systems function. It is therefore important for the electronic architectures involved to scale effectively in terms of latency, area and power usage in order to be able to process more advanced neural models. Within this paper a design is proposed that utilises the parallel nature and the resources available upon modern FPGAs to achieve a scalable and efficient method for the implementation of complex neural models, allowing for the simulation of 150000 ion channels concurrently.
In mature engineering disciplines, international consensus can be reached on measurement, as evidenced through established measurement standards. In software engineering, there are 5 functional size measurement standa...
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In mature engineering disciplines, international consensus can be reached on measurement, as evidenced through established measurement standards. In software engineering, there are 5 functional size measurement standards. These standards work best when the functionality to be measured is fully known, although this usually doesn't happen in the early phases of software development. The techniques most often used to approximate the sizing of the software to be developed in the early phases involve historical data. However, gathering historical data is a challenge in itself. This paper proposes the use of a fuzzy logic model to approximate the functional size of a piece of software.
This paper presents a novel design of a Field Programmable Gate Array (FPGA) based on Quantum-dot Cellular Automata (QCA) technology. QCA is a transistorless emerging technology based on Coulombic repulsion. It is bei...
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This paper presents a novel design of a Field Programmable Gate Array (FPGA) based on Quantum-dot Cellular Automata (QCA) technology. QCA is a transistorless emerging technology based on Coulombic repulsion. It is being explored as one of the alternative technologies which may replace CMOS in the future. In this work, QCA based nano FPGAs are designed and simulated. The designs of the Configurable logic Block (CLB) and the Programmable Switch Matrix (PSM) are first developed separately and then integrated together to form a complete QCA based FPGA. The circuit components are designed to take full advantage of the unique features of QCA technology. It is observed that the proposed circuits have less latency and occupy less area compared to earlier designs. Also, to the best of our knowledge, this is the first integrated design of a QCA based FPGA which includes both CLBs and PSMs. The FPGA is designed and simulated using the QCADesigner tool.
Theoretical substantiation of the basic parameters of immitance logical elements such as speed, the coefficient of association for the input, the coefficient of stability, power consumption is carried out. The analyti...
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Theoretical substantiation of the basic parameters of immitance logical elements such as speed, the coefficient of association for the input, the coefficient of stability, power consumption is carried out. The analytical expressions for these parameters, which are used for the implementation of LE on the bipolar and field-polar transistor structures are obtained.
Based on modeling and optimization of parameters it is shown, that gyrotron with a slowing E 0i -mode of corrugated waveguide is not the worse output characteristics (efficiency, power, gain) than the usual gyrotron o...
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Based on modeling and optimization of parameters it is shown, that gyrotron with a slowing E 0i -mode of corrugated waveguide is not the worse output characteristics (efficiency, power, gain) than the usual gyrotron on H 0i -mode quasi-regular waveguide, but requires approximately twice smaller induction of the magnetostatic field in the area of interaction.
This paper presents the results of development of experimental samples of GaN quasi-monolithic IC (QMIC) two-stage power amplifier with the output power up to 1.5 W and the gain 12-16 dB in 8-18 GHz frequency band.
This paper presents the results of development of experimental samples of GaN quasi-monolithic IC (QMIC) two-stage power amplifier with the output power up to 1.5 W and the gain 12-16 dB in 8-18 GHz frequency band.
This paper presents an EDA (Electronic Design Automation) tool that generates basic building blocks for cryptographic hardware in VHDL. The purpose of the tool is to decrease the design time of cryptographic hardware ...
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This paper presents an EDA (Electronic Design Automation) tool that generates basic building blocks for cryptographic hardware in VHDL. The purpose of the tool is to decrease the design time of cryptographic hardware and to allow designers to make abstraction of both the arithmetic and design complexity. The tool generates multiple implementations for one arithmetic description and then benchmarks the implementations to find the most optimal, based upon design space parameters. These parameters consist of area and speed requirements. We present datapath and control logic results for a Xilinx Virtex-5 FPGA. The novelty in our approach lies in the fact that we exploit the higher-order features of functional languages to facilitate the design space exploration and that we take benefit from the strength of the third-party synthesis tool by generating VHDL code at an abstraction level that is higher than the gate level. Nevertheless, in this stage of the development of the tool, the different cryptographic architectures are hand-made and the selection of the most optimal solution, based upon user requirements, is done by exhaustive search. This means that the tool leaves room for improvement, but forms a solid base for further development.
1 GHz microwave Doherty power amplifier (PA) using GaN MESFET NPTB00025 was designed. Influence of input power dividing ratio and negative gate bias voltages ratio of two class-B PAs on whole Doherty scheme characteri...
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1 GHz microwave Doherty power amplifier (PA) using GaN MESFET NPTB00025 was designed. Influence of input power dividing ratio and negative gate bias voltages ratio of two class-B PAs on whole Doherty scheme characteristics was simulated. An amplifier delivers 25 W of output power with 69.8% efficiency and 20 V of supply voltage.
This paper presents a hybrid method for user query reformation and classification depending on fuzzy semantic-based approach and KNN classifier. The overall processes of the system are: query preprocessing, fuzzy memb...
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ISBN:
(纸本)9781467328234
This paper presents a hybrid method for user query reformation and classification depending on fuzzy semantic-based approach and KNN classifier. The overall processes of the system are: query preprocessing, fuzzy membership calculation and query classification and reformation. Classification is performed using KNN classifier not just by keyword-based semantic but using a sentence-level semantics. A semantic model - EnrichSearch - has been developed for applying this approach. After classification, user's query is reformulated to be submitted to a search engine which gives better results than submitting the original query to the search engine. Experiments show significant enhancement in search results over traditional keyword-based search engines' results.
GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance -4 ohm cm 2 . A gate leakage current does not ...
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GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance -4 ohm cm 2 . A gate leakage current does not exceed 1 μA in the bias range -1.5...+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.
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