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international conference on Data Engineering

作者： Mingwang Tang Feifei Li Jeff M. Phillips Jeffrey Jestes School of Computing University of Utah Salt Lake USA

ISBN: (纸本)9781467300421

In distributed data management, a primary concern is monitoring the distributed data and generating an alarm when a user specified constraint is violated. A particular useful instance is the threshold based constraint, which is commonly known as the distributed threshold monitoring problem [4], [16], [19], [29]. this work extends this useful and fundamental study to distributed probabilistic data that emerge in a lot of applications, where uncertainty naturally exists when massive amounts of data are produced at multiple sources in distributed, networked locations. Examples include distributed observing stations, large sensor fields, geographically separate scientific institutes/units and many more. When dealing with probabilistic data, there are two thresholds involved, the score and the probability thresholds. One must monitor both simultaneously, as such, techniques developed for deterministic data are no longer directly applicable. this work presents a comprehensive study to this problem. Our algorithms have significantly outperformed the baseline method in terms of both the communication cost (number of messages and bytes) and the running time, as shown by an extensive experimental evaluation using several, real large datasets.

关键词： Monitoring Distributed databases Probabilistic logic Uncertainty Marine vehicles Poles and towers Markov processes

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Quantum Transport in Nanowires and Nanographene

Quantum Transport in Nanowires and Nanographene

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international conference on Microelectronics, MIEL

作者： Vijay K. Arora Nanotech Research Alliance Ibnu Sina Institute of Fundamental Science Studies Universiti Teknologi Malaysia Skudai Malaysia Division of Engineering and Physics Wilkes University Wilkes Barre PA USA

Transport in nanowires and nanographene with emphasis on nanotubes is reviewed from classical to quantum, low-field to high-field, nondegenrate to degenerate, scattering limited to ballistic, and beyond. Nonequilibrium Arora distribution function (NEADF) is shown to be an outgrowth of the Fermi-Dirac statistics by inclusion of the energy gained in a mean free path (mfp). NEADF is highly asymmetric with electrons changing equilibrium random phase to extreme nonequilibrium unilateral phase in a towering electric field. the drift response to the electric field is shown to be limited to the unilateral intrinsic velocity appropriate for twice the carrier concentration as electrons transfer from -x-direction to +x-direction in the presence of an extremely high electric field in the -x-direction. An electron temperature for degenerate statistics is defined to make it compatible with nondegenrate statistics. the intrinsic velocity giving saturation is shown to be independent of the scattering-limited or ballistic mobility. Optical phonon emission may lower the saturation velocity. In a low-field domain, the mobility may become size-dependent and is ballistic when injection from the ohmic contacts is considered.

关键词： Electric fields Scattering logic gates Nanowires Vectors Phonons Distribution functions

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Device characteristics research according to the array EEPROM cell's active pattern difference

Device characteristics research according to the array EEPRO...

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international conference on Microelectronics, MIEL

作者： Young-sik Choi Yong-han Roh Sang-bae Yi Sun-hyun Kim Sung-hoon You Semiconductor LSI TD2 Team System LSI Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea School of Information and Communication Engineering Sungkyunkwan University Suwon South Korea

In the product development of our company's Deep Sub Micron Display Driver IC(DDI), we found that inner cell's and outer cell's characteristic are significantly different. this problem leads to device yield drop and reliability problem, so we must check the reason why the characteristics changes of inner cell and outer cell were so serious in the array EEPROM cell. First of all, we check the gate oxide area in EEPROM cell on the supposition that inner cell's and outer cell's gate oxide thickness are different. After we checked it, we found that the most effective reason of the characteristics changes was Gate Oxide thickness changes had a decisive effect on the EEPROM Cell' changes according to the degree of STI profile(Top Corner Rounding). And the difference of STI profile is cause of active pattern difference. In this paper, we suggested the profile improvement method by STI process and characteristics improvement by insulting Dummy cell.

关键词： EPROM logic gates Arrays Tunneling Silicon compounds Large scale integration

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Charge trapping properties in Ti-doped Ta2O5 films on nitrided Si

Charge trapping properties in Ti-doped Ta2O5 films on nitrid...

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international conference on Microelectronics, MIEL

作者： A. Skeparovski N. Novkovski A. Paskaleva Institute of Physics Faculty of Natural Sciences and Mathematics Ss Cyril and Methodius University Skopje Macedonia Institute of Solid State Physics Bulgarian Academy of Sciences Sofia Bulgaria

the trapping of charge carriers in Ti-doped Ta 2 O 5 (6 nm) stacks on nitrided Si during constant current stress of metal-insulator-semiconductor capacitors has been investigated. Both, the charge buildup on pre-existing traps as well as on traps generated by the stress have been taken into account to explain the observed evolution of the gate voltage during the measurement. the cross section of pre-existing traps has been estimated by applying the first order kinetic model. Two types of neutral trapping sites with cross sections of 2.8·10 -18 cm 2 and 3.7·10 -19 cm 2 were identified to exist simultaneously in each of the four technologically different Ti-doped Ta 2 O 5 stacks. One of these traps (σ = 3.7·10 -19 cm 2 ) is inherent for the Ta 2 O 5 structure itself, while the other one (σ = 2.8·10 -18 cm 2 ) originates from the presence of Ti. Evidences are presented which support the idea that Ti-related center might be neutral complex obtained by coupling Ti-atoms with an oxygen vacancy.

关键词： Electron traps Stress Silicon logic gates Doping Films

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Investigation of failure mechanisms in low-voltage power VDMOSFETs linked with gate oxide process quality

Investigation of failure mechanisms in low-voltage power VDM...

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international conference on Microelectronics, MIEL

作者： E. Pomès J.-M. Reynès P. Tounsi J.-M. Dorkel CNRS-LAAS UPS INSA INP ISAE Université de Toulouse Toulouse France Freescale Semiconductor Company Toulouse France

Devices dedicated to automotive applications have to reach exacting specifications especially in terms of reliability. the burn-in HTGB test is dedicated to evaluate gate oxide integrity with gate biased under high temperature. therefore, gate oxide quality is an exacting parameter which contributes to device reliability. this paper is based on the study of planar technology and more precisely on vertical double-diffused power MOSFETs. First of all, the purpose of this work is to correlate the gate oxide process quality and the influence of wet cleanings at silicon level on die reliability. Actually, the cleaning performed just before oxide growth is linked with gate oxide robustness as shown with GOI measurements on dedicated structures and QBD measurements on power devices. Another key point is the homogeneity of breakdown voltage due to parallel MOSFETs used in application. Probe electrical results and TEM observations has demonstrated a correlation between BVdss establishment and cleaning used on silicon surface. In conclusion, the kind of cleaning performed at silicon level before oxide growth has been identified to generate irreversible damages for power VDMOSFETs.

关键词： Cleaning logic gates Silicon Reliability Chemicals MOSFETs Performance evaluation

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Charge trapping at low injection currents in (TiN, Mo, Pt)/Ta2O5:Hf/SiO2/Si structures

Charge trapping at low injection currents in (TiN, Mo, Pt)/T...

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international conference on Microelectronics, MIEL

作者： L. S. Georgievska N. Novkovski E. Atanassova Institute of Mathematics and Physics Faculty of Electrical Engineering and Information Technologies University St Cyril and Methodius Skopje Macedonia Institute of Physics Faculty of Natural Sciences and Mathematics University St Cyril and Methodius Skopje Macedonia Institute of Solid State Physics Bulgarian Academy of Sciences Sofia Bulgaria

Samples investigated in this work contain Hf-doped layers of Ta 2 O 5 , i.e. the mixture of two most favorable high-k materials, which proved appropriate characteristics for application in DRAMs and MOSFETs. the influence of the top electrode material, with different work functions, on the electrical properties of MIS structures is of particular interest and was studied in this work. Here we confirmed that the presence of interface states causes frequency dispersion of C-V characteristics, but still the negligible hysteresis indicates very low slow states density of the order of 10 10 cm -2 . Another effect observed here is due to the nature of the gate electrodes. It is observed only in the case of high-work-function metal, when trapping of charges in the emptied positive traps in doped Ta 2 O 5 occurs, case that was previously observed in pure Ta 2 O 5 . Here we have determined the parameters of the traps responsible for this effect.

关键词： logic gates Charge carrier processes Capacitance Metals High K dielectric materials Electrodes Capacitance-voltage characteristics

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Answer Set programming for Single-Player Games in General Game Playing

Answer Set Programming for Single-Player Games in General Ga...

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25th international conference on logic programming (iclp)

作者： thielscher, Michael Tech Univ Dresden Dept Comp Sci Dresden Germany

ISBN: (纸本)9783642028458

As a novel, grand AI challenge, General Game Playing is concerned with the development of systems that understand the rules of unknown games and play these games well without human intervention. In this paper, we show how Answer Set programming can assist a general game player with the special class of single-player games. To this end, we present a translation from the general Game Description Language (GDL) into answer set programs (ASP). Correctness of this mapping is established by proving that the stable models of the resulting ASP coincide with the possible developments of the original GDL game. We report on experiments with single-player games from past AAAI General Game Playing Competitions which substantiate the claim that Answer Set programming can provide valuable support to general game playing systems for this type of games.

关键词： logic programming

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Model checking communication protocols 28th

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28th international conference on Current Trends in theory and Practice of Informatics, SOFSEM 2001

作者： Argón, Pablo Delzanno, Giorgio Mukhopadhyay, Supratik Podelski, Andreas IRCyN 1 rue de la Noë BP 92101 Nantes44321 France Max-Planck-Institut für Informatik Im Stadtwald Saarbrücken66123 Germany

ISBN: (纸本)9783540429128

Brand and Zafiropulo [1] introduced the model of communicating finite-state machines to represent a distributed system connected with FIFO channels. Several different communication protocols can be specified with this simple model. In this paper we address the problem of automatically validating protocols by verifying properties such as well-formedness and absence of deadlock. Our method is based on a representation of communicating finite-state machines in terms of logic programs. this leads to efficient verification algorithms based on the ground and non-ground semantics of logic programming. © Springer-Verlag Berlin Heidelberg 2001.

关键词： logic programming

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Fourth international conference on logic programming and Nonmonotonic Reasoning (LPNMR '97) Dagstuhl, Germany, 28-31 July 1997

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AI COMMUNICATIONS 1997年第3-4期10卷 203-207页

作者： Milnikel, R

the fourth international conference on logic programming and Nonmonotonic Reasoning (LPNMR) was held in Dagstuhl, Germany from the 28th to the 31st of July 1997. this year's installment of LPNMR reflected a new stage in the development of this cross-disciplinary field, with demonstrations of ten implemented system joining the submitted papers, invited talks and panel discussions. the details of the conference together with the various topics tackled are presented.

关键词： Artificial intelligence

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Compositional adjustment of concurrent programs to satisfy temporal logic constraints in MENDELS ZONE 28

Compositional adjustment of concurrent programs to satisfy t...

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28th Annual Hawaii international conference on System Sciences, HICSS 1995

作者： Uchihira, N. Honiden, S. Systems and Software Engineering Lab R and D Center TOSHIBA Corporation 70 Yanagi-cho Saiwai-ku Kawasaki210 Japan

ISBN: (纸本)0818669306

Examines »program adjustment», a formal and practical approach to developing correct concurrent programs, by automatically adjusting an imperfect program to satisfy given constraints. A concurrent program is modeled by a finite-state process, and program adjustment to satisfy temporal logic constraints is formalized as the synthesis of an arbiter process which partially serializes target (i.e. imperfect) processes to remove harmful nondeterministic behaviors. Compositional adjustment is also proposed for large-scale compound target processes, using process equivalence theory. We have developed a programming environment on the parallel computer Multi-PSI, called MENDELS ZONE, that adopts this compositional adjustment. the target concurrent programming language, MENDEL, is based on a high-level Petri net. Adjusted programs can be compiled into the kernel language KL1 and executed on Multi-PSI. © 1995 IEEE.

关键词： Temporal logic

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