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检索条件"任意字段=28th International Conference on Logic Programming, ICLP 2012"
106 条 记 录,以下是101-110 订阅
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Quantum Transport in Nanowires and Nanographene
Quantum Transport in Nanowires and Nanographene
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international conference on Microelectronics, MIEL
作者: Vijay K. Arora Nanotech Research Alliance Ibnu Sina Institute of Fundamental Science Studies Universiti Teknologi Malaysia Skudai Malaysia Division of Engineering and Physics Wilkes University Wilkes Barre PA USA
Transport in nanowires and nanographene with emphasis on nanotubes is reviewed from classical to quantum, low-field to high-field, nondegenrate to degenerate, scattering limited to ballistic, and beyond. Nonequilibriu... 详细信息
来源: 评论
Creating new algorithms and modifying old algorithms to use the variable precision floating point simulator
Creating new algorithms and modifying old algorithms to use ...
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Asilomar conference on Signals, Systems & Computers
作者: R. Ignatowski E.E. Swartzlander International Business Machines Corporation Austin TX USA Int. Business Machines Corp. Austin TX USA
the paper describes a variable precision floating point simulator, its features and how it is used. the simulator was created at the University of Texas by Darioush Samani, Joshua Ellinger, Edward Powers, and Earl Swa... 详细信息
来源: 评论
Device characteristics research according to the array EEPROM cell's active pattern difference
Device characteristics research according to the array EEPRO...
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international conference on Microelectronics, MIEL
作者: Young-sik Choi Yong-han Roh Sang-bae Yi Sun-hyun Kim Sung-hoon You Semiconductor LSI TD2 Team System LSI Division Samsung Electronics Company Limited Yongin si Kyunggi South Korea School of Information and Communication Engineering Sungkyunkwan University Suwon South Korea
In the product development of our company's Deep Sub Micron Display Driver IC(DDI), we found that inner cell's and outer cell's characteristic are significantly different. this problem leads to device yiel... 详细信息
来源: 评论
Charge trapping properties in Ti-doped Ta2O5 films on nitrided Si
Charge trapping properties in Ti-doped Ta2O5 films on nitrid...
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international conference on Microelectronics, MIEL
作者: A. Skeparovski N. Novkovski A. Paskaleva Institute of Physics Faculty of Natural Sciences and Mathematics Ss Cyril and Methodius University Skopje Macedonia Institute of Solid State Physics Bulgarian Academy of Sciences Sofia Bulgaria
the trapping of charge carriers in Ti-doped Ta 2 O 5 (6 nm) stacks on nitrided Si during constant current stress of metal-insulator-semiconductor capacitors has been investigated. Both, the charge buildup on pre-exis... 详细信息
来源: 评论
Investigation of failure mechanisms in low-voltage power VDMOSFETs linked with gate oxide process quality
Investigation of failure mechanisms in low-voltage power VDM...
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international conference on Microelectronics, MIEL
作者: E. Pomès J.-M. Reynès P. Tounsi J.-M. Dorkel CNRS-LAAS UPS INSA INP ISAE Université de Toulouse Toulouse France Freescale Semiconductor Company Toulouse France
Devices dedicated to automotive applications have to reach exacting specifications especially in terms of reliability. the burn-in HTGB test is dedicated to evaluate gate oxide integrity with gate biased under high te... 详细信息
来源: 评论
Charge trapping at low injection currents in (TiN, Mo, Pt)/Ta2O5:Hf/SiO2/Si structures
Charge trapping at low injection currents in (TiN, Mo, Pt)/T...
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international conference on Microelectronics, MIEL
作者: L. S. Georgievska N. Novkovski E. Atanassova Institute of Mathematics and Physics Faculty of Electrical Engineering and Information Technologies University St Cyril and Methodius Skopje Macedonia Institute of Physics Faculty of Natural Sciences and Mathematics University St Cyril and Methodius Skopje Macedonia Institute of Solid State Physics Bulgarian Academy of Sciences Sofia Bulgaria
Samples investigated in this work contain Hf-doped layers of Ta 2 O 5 , i.e. the mixture of two most favorable high-k materials, which proved appropriate characteristics for application in DRAMs and MOSFETs. the influ... 详细信息
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