In distributed data management, a primary concern is monitoring the distributed data and generating an alarm when a user specified constraint is violated. A particular useful instance is the threshold based constraint...
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ISBN:
(纸本)9781467300421
In distributed data management, a primary concern is monitoring the distributed data and generating an alarm when a user specified constraint is violated. A particular useful instance is the threshold based constraint, which is commonly known as the distributed threshold monitoring problem [4], [16], [19], [29]. this work extends this useful and fundamental study to distributed probabilistic data that emerge in a lot of applications, where uncertainty naturally exists when massive amounts of data are produced at multiple sources in distributed, networked locations. Examples include distributed observing stations, large sensor fields, geographically separate scientific institutes/units and many more. When dealing with probabilistic data, there are two thresholds involved, the score and the probability thresholds. One must monitor both simultaneously, as such, techniques developed for deterministic data are no longer directly applicable. this work presents a comprehensive study to this problem. Our algorithms have significantly outperformed the baseline method in terms of boththe communication cost (number of messages and bytes) and the running time, as shown by an extensive experimental evaluation using several, real large datasets.
the trapping of charge carriers in Ti-doped Ta 2 O 5 (6 nm) stacks on nitrided Si during constant current stress of metal-insulator-semiconductor capacitors has been investigated. Both, the charge buildup on pre-exis...
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the trapping of charge carriers in Ti-doped Ta 2 O 5 (6 nm) stacks on nitrided Si during constant current stress of metal-insulator-semiconductor capacitors has been investigated. Both, the charge buildup on pre-existing traps as well as on traps generated by the stress have been taken into account to explain the observed evolution of the gate voltage during the measurement. the cross section of pre-existing traps has been estimated by applying the first order kinetic model. Two types of neutral trapping sites with cross sections of 2.8·10 -18 cm 2 and 3.7·10 -19 cm 2 were identified to exist simultaneously in each of the four technologically different Ti-doped Ta 2 O 5 stacks. One of these traps (σ = 3.7·10 -19 cm 2 ) is inherent for the Ta 2 O 5 structure itself, while the other one (σ = 2.8·10 -18 cm 2 ) originates from the presence of Ti. Evidences are presented which support the idea that Ti-related center might be neutral complex obtained by coupling Ti-atoms with an oxygen vacancy.
We use a model for discrete stochastic search in which one or more objects ("targets") are to be found by a search over n locations ("boxes"), where n is infinitely large. Each box has some probabi...
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ISBN:
(纸本)9783030304843;9783030304836
We use a model for discrete stochastic search in which one or more objects ("targets") are to be found by a search over n locations ("boxes"), where n is infinitely large. Each box has some probability that it contains a target, resulting in a distribution H over boxes. We model the search for the targets as a stochastic procedure that draws boxes using some distribution S. We derive first a general expression on the expected number of misses E[Z] made by the search procedure in terms of H and S. We then obtain an expression for an optimal distribution S* to minimise E[Z]. this results in a relation between: the entropy of H and the KL-divergence between H and S*. this result induces a 2-partitions over the boxes consisting of those boxes with H probability greater than I and the rest. We use this result to devise a stochastic search procedure for the practical situation when H is unknown. We present results from simulations that agree withtheoretical predictions;and demonstrate that the expected misses by the optimal seeker decreases as the entropy of H decreases, with a maximum obtained for uniform H. Finally, we demonstrate applications of this stochastic search procedure with a coarse assumption about H. the theoretical results and the procedure are applicable to stochastic search over any aspect of machine learning that involves a discrete search-space: for example, choice over features, structures or discretized parameter-selection. In this work, the procedure is used to select features for Deep Relational Machines (DRMs) which are Deep Neural Networks (DNNs) defined in terms of domain-specific knowledge and built with features selected from large, potentially infinite-attribute space. Empirical results obtained across over 70 real-world datasets show that using the stochastic search procedure results in significantly better performances than the state-of-the-art.
In the product development of our company's Deep Sub Micron Display Driver IC(DDI), we found that inner cell's and outer cell's characteristic are significantly different. this problem leads to device yiel...
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In the product development of our company's Deep Sub Micron Display Driver IC(DDI), we found that inner cell's and outer cell's characteristic are significantly different. this problem leads to device yield drop and reliability problem, so we must check the reason why the characteristics changes of inner cell and outer cell were so serious in the array EEPROM cell. First of all, we check the gate oxide area in EEPROM cell on the supposition that inner cell's and outer cell's gate oxide thickness are different. After we checked it, we found that the most effective reason of the characteristics changes was Gate Oxide thickness changes had a decisive effect on the EEPROM Cell' changes according to the degree of STI profile(Top Corner Rounding). And the difference of STI profile is cause of active pattern difference. In this paper, we suggested the profile improvement method by STI process and characteristics improvement by insulting Dummy cell.
Samples investigated in this work contain Hf-doped layers of Ta 2 O 5 , i.e. the mixture of two most favorable high-k materials, which proved appropriate characteristics for application in DRAMs and MOSFETs. the influ...
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Samples investigated in this work contain Hf-doped layers of Ta 2 O 5 , i.e. the mixture of two most favorable high-k materials, which proved appropriate characteristics for application in DRAMs and MOSFETs. the influence of the top electrode material, with different work functions, on the electrical properties of MIS structures is of particular interest and was studied in this work. Here we confirmed that the presence of interface states causes frequency dispersion of C-V characteristics, but still the negligible hysteresis indicates very low slow states density of the order of 10 10 cm -2 . Another effect observed here is due to the nature of the gate electrodes. It is observed only in the case of high-work-function metal, when trapping of charges in the emptied positive traps in doped Ta 2 O 5 occurs, case that was previously observed in pure Ta 2 O 5 . Here we have determined the parameters of the traps responsible for this effect.
Devices dedicated to automotive applications have to reach exacting specifications especially in terms of reliability. the burn-in HTGB test is dedicated to evaluate gate oxide integrity with gate biased under high te...
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Devices dedicated to automotive applications have to reach exacting specifications especially in terms of reliability. the burn-in HTGB test is dedicated to evaluate gate oxide integrity with gate biased under high temperature. therefore, gate oxide quality is an exacting parameter which contributes to device reliability. this paper is based on the study of planar technology and more precisely on vertical double-diffused power MOSFETs. First of all, the purpose of this work is to correlate the gate oxide process quality and the influence of wet cleanings at silicon level on die reliability. Actually, the cleaning performed just before oxide growth is linked with gate oxide robustness as shown with GOI measurements on dedicated structures and QBD measurements on power devices. Another key point is the homogeneity of breakdown voltage due to parallel MOSFETs used in application. Probe electrical results and TEM observations has demonstrated a correlation between BVdss establishment and cleaning used on silicon surface. In conclusion, the kind of cleaning performed at silicon level before oxide growth has been identified to generate irreversible damages for power VDMOSFETs.
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