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AlGaAs/InGaAs PHEMT preamplifier for optical communication systems

AlGaAs/InGaAs PHEMT preamplifier for optical communication s...

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International conference on Solid-State and Integrated Circuit Technology

作者： Jinping Ao Shiyong Liu Qingming Zeng Yonglin Zhao Keli Cai Xianjie Li Xhixian Jiao Jianjun Gao Chunguang Liang Electronic Engineering Department Jilin University China National Key Laboratory of ASIC Hebei Semiconductor Research Institute Shijiazhuang Hebei China

the design, fabrication and characteristics of a AlGaAs/InGaAs PHEMT monolithic transimpedance preamplifier is described. the PHEMT material used here is based on /spl delta/-doped carrier supplying layer and GaAs/AlGaAs superlattice buffer. the transconductance and output conductance of a 1 /spl mu/m-gate PHEMT is 250 mS/mm and 8mS/mm respectively with threshold voltage of -1.2 v, the maximum saturation current density is 235 mS/mm. On-wafer network analysis with HP8510 network analyzer shows its cut-off frequency of 21 GHz and maximum oscillation frequency of 40 GHz. Transimpedance preamplifier its measured maximum transimpedance gain of 51.4 dB/spl Omega/ with -3 dB bandwidth no less than 5.05 GHz. the input equivalent-noise current density is 13 PA//spl radic/Hz.

关键词： Indium gallium arsenide PHEMTs Preamplifiers optical fiber communication current density Cutoff frequency optical device fabrication Conducting materials optical materials Gallium arsenide

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design and machining data integration

Design and machining data integration

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International conference on Emerging Technologies and Factory Automation (ETFA)

作者： V. Wolff J.-F. Rigal P. Ghodous M. Martinez CASM INSA Lyon France LIGIM University of Lyon I France PRISMA-IUTB University of Lyon I France

ISBN: (纸本)0780372417

the concurrent design of a product and its manufacturing process requires a shared understanding of products and processes among many experts concerned with design and manufacturing. the objective of this paper is to provide an approach for the representation, integration and communication of different experts' viewpoints in the design and manufacturing phases. Firstly, we describe the problems related to concurrent design and current research works. then we explain how, using the STEP standard, we can represent an integrated design and manufacturing model. As a case study, we consider the tracking of work-piece dimensions through all the different stages of product development, from design to machining. It is based on a model of machining tolerances based on a factory's machine-tool characterization. the chosen application case is a turning process. the model is validated by verification of the theoretical results in the case of machining several representative parts. Experiments point out the efficiency of our machining model. Finally, we present future developments of our integration work.

关键词： Machining Manufacturing processes Product design Virtual manufacturing Product development Process design design engineering Data engineering Collaborative work Standards development

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A low-power 0.4-22GHz CMOS cascode distributed amplifier for optical communication systems

A low-power 0.4-22GHz CMOS cascode distributed amplifier for...

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IEEE International conference on Electronics, Circuits and Systems (ICECS)

作者： Kimia T. Ansari Calvin Plett Mustapha C.E. Yagoub Department of Electronics Carleton University Ottawa ONT Canada School of Information Technology and Engineering Ottawa University Ottawa ONT Canada

ISBN: (纸本)9781424450909

A CMOS distributed amplifier operating over 0.4-22 GHz is presented. three stages of cascode gain cell are used in this design to enhance the gain and bandwidth performance. To improve the stability of the circuit, a damping resistor is added to the gate of the common gate amplifier in the cascode pair. Our design consumes only 8.6 mW power from a 850 mV supply voltage and this has been achieved through the use of large transistors with low current densities. the design is implemented in standard 0.13 ¿m CMOS technology. the amplifier has a unity-gain bandwidth of 22 GHz, and a maximum small signal gain of 9 dB. Input and output transmission lines are matched to 50 ¿, with the worst case return losses on the input and output of -6 dB and -8 dB, respectively. the chip area is only 750 × 1375 ¿m including all test pads and ESD protections. To the best of our knowledge this is the lowest power consumption among distributed amplifiers showing the same small signal results.

关键词： Distributed amplifiers optical fiber communication Performance gain Bandwidth optical amplifiers CMOS technology Circuit stability Damping Resistors Voltage

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A fast hardware implementation method of interrupt handling based on Armv8-M architecture 4

A fast hardware implementation method of interrupt handling ...

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4th International conference on Telecommunications, Optics, and Computer Science, TOCS 2023

作者： Ma, Jun Zhao, Hao Zhang, Xige Liu, Liang Guan, Yuan Wang, Chenxi Digital Chip Design Center Beijing Smartchip Microelectronics Technology CO. LTD Beijing China Electric Power Research Institute of Shaanxi Electric Power Company SGCC Shaanxi Xi'an China

ISBN: (数字)9781510679849

ISBN: (纸本)9781510679832

the interrupt response speed can reflect the CPU's processing speed for external events, and is a very important indicator for measuring CPU performance. In the field of real-time applications, interrupt response speed is an important manifestation of real-time performance and an important aspect of optimizing CPU implementation. When responding to interrupts, especially in CPU implementations that allow interrupt nesting, it usually involves saving the interrupt context. Only after saving the interrupt context can the CPU execute instructions related to interrupts in the interrupt handling function. this paper presents a hardware implementation scheme for backup registers. One application method is to quickly save interrupt context information to the backup registers when responding to an interrupt, and then save the contents of the backup registers to the stack parallel in the background when executing interrupt processing function instructions to improve interrupt response speed. Another application method is to restore the interrupt context from the backup register directly, or to obtain the current interrupt context information from the current interrupt stack position in the background in parallel during the execution of the interrupt processing function instruction to the backup registers. When the current interrupt returns, the interrupt context can be directly restored from the backup registers to improve the speed of interrupt return. Hardware stack identification can be used to indicate whether interrupt nesting can be performed or not. Whether interrupt context can be restored from the backup registers or not can be checked by the effective hardware identification for backup registers information. the process of parallel reading interrupt contexts from stack to backup registers in the background can be controlled by recording the stack position corresponding to each interrupt context in hardware. © 2024 SPIE.

关键词： Restoration

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Responsivity analysis of a resonant cavity QDIP at 10 µm wavelength

Responsivity analysis of a resonant cavity QDIP at 10 µm wa...

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International conference on Transparent optical Networks

作者： Ali Mir-Derikvandi Vahid Ahmadi Department of Electrical Engineering Tarbiat Moalem University Tehran Iran

ISBN: (纸本)9781424448258

In this paper, based on 8-band k.p method, we study the infrared wavelength absorption through the conduction subbands of InAs/GaAs pyramidal shape quantum dots (PSQDs) using finite difference method. Considering homogeneous and inhomogeneous broadening effects we design an asymmetric multiple barrier resonant tunnelling (AMBRT) quantum dot infrared photodetector (QDIP) for lower dark current at lambda=10 mum. Considering coverage factor of QDs, quantum efficiency (QE) of QDIP is calculated. Although absorption coefficient of QDs is large, QE is low due to their ultra short effective absorption region. To enhance QDIP-QE and consequently its responsivity an appropriate resonant cavity structure is proposed. We use InGaAs/InAlAs DBR as the bottom reflector for the designed AMBRT InAs/GaAs QDIP and Au as the top mirror. the reflectivity of the DBR is calculated by transfer matrix method. It is shown that with certain periods of InGaAs/InAlAs DBR, QE increases to about 40 times of similar conventional QDIP.

关键词： Resonance Electromagnetic wave absorption Distributed Bragg reflectors Gallium arsenide Quantum dots Indium gallium arsenide Indium compounds Shape Finite difference methods Resonant tunneling devices

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Surface plasmon enhancement of optical absorption of thin film a-Si:H solar cells

Surface plasmon enhancement of optical absorption of thin fi...

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2009 34th IEEE Photovoltaic Specialists conference (PVSC)

作者： R. Biswas D. Zhou B. Curtin N. Chakravarty V. Dalal Department of Physics & Astronomy Ames Laboratory Iowa State University Ames IA USA Microelectronics Research Center Department of Electrical and Computer Engineering Iowa State University Ames IA USA

We design and fabricate a-Si:H solar cells with plasmonic crystal back reflectors demonstrating enhanced absorption of near infrared photons. Rigorous simulations predict plasmonic nanoparticles on ITO can increase absorption in the near infrared. Rigorous simulations also predict plasmonic crystal back reflectors with a pitch of ~750 nm to optimize the enhanced absorption. Such periodic back reflectors have been fabricated with photolithography and a-Si:H solar cells have been grown on them by PECVD. the solar cells display ~9% improvement in short circuit current and external quantum efficiency and a absorption enhancement factor exceeding 8 above 650 nm.

关键词： optical films Plasmons Photovoltaic cells Electromagnetic wave absorption Photonic crystals Predictive models Nanoparticles Indium tin oxide Circuit simulation Lithography

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Motion compensation in a tomographic ultrasound imaging system: toward volumetric scans of a limb for prosthetic socket design

Motion compensation in a tomographic ultrasound imaging syst...

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Annual International conference of the IEEE engineering in Medicine and Biology Society

作者： Bryan J. Ranger Micha Feigin Nikita Pestrov Xiang Zhang Victor Lempitsky Hugh M. Herr Brian W. Anthony the Harvard-MIT Health Sciences and Technology Program Massachusetts Institute of Technology and Harvard Medical School Cambridge MA 02139 USA the Department of Media Arts and Sciences Massachusetts Institute of Technology Cambridge MA 02139 USA the Skolkovo Institute of Science and Techonology Skolkovo 143025 Russian Federation the Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA the Department of Media Arts and Sciences and Harvard-MIT Health Sciences and Technology Program Massachusetts Institute of Technology and Harvard Medical School Cambridge MA 02139 USA

ISBN: (纸本)9781424492695

current methods of prosthetic socket fabrication remain subjective and ineffective at creating an interface to the human body that is both comfortable and functional. though there has been recent success using methods like magnetic resonance imaging and biomechanical modeling, a low-cost, streamlined, and repeatable process has not been fully demonstrated. Medical ultrasonography, which has significant potential to expand its clinical applications, is being pursued to acquire data that may quantify and improve the design process and fabrication of prosthetic sockets. this paper presents a new multi-modal imaging approach for acquiring volumetric images of a human limb, specifically focusing on how motion of the limb is compensated for using optical imagery.

关键词： human body that limb is compensated using optical imagery

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Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots and Superlattices

Mid Infrared Focal Plane Arrays with Nanoscale Quantum Dots ...

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IEEE conference on Nanotechnology

作者： S. Krishna Center for High Technology Materials Department of Electrical and Computer Engineering University of New Mexico Albuquerque NM USA

ISBN: (纸本)9781424421039

Presently, the state of the art photon detectors for the mid wave infrared (MWIR, 3-5 mum) and long wave infrared (LWIR, 8-12 mum) are based on interband transitions in bulk indium antimonide (InSb) and HgCdTe alloys respectively. Two emerging technologies for next generation sensors that offer enhanced functionality include (i) intersubband detectors based on nanoscale quantum dots and (ii) interband transitions in the Type II InAs/GaSb strain layer superlattice system. Infrared detectors based on InAs/GaSb strain layer superlattices (SLSs) appear as a promising alternative to the present-day infrared detection technologies. SLSs offer numerous advantages over existing detector technologies, including better uniformity, reduced tunneling currents, normal incidence absorption and suppressed Auger recombination. SLSs are characterized by the broken-gap type-II alignment. Presently all SLSs detectors are based on a photodiode (p-i-n or n-i-p) design. During the conventional fabrication process of photodiodes, the deep etch through the absorbing region is utilized in order to define the optical area of the detector. Electronic surface states within the energy band gap of SLS are generated, resulting in large surface leakage currents. the suppression of these currents is the most demanding challenge for the SLS technology. We have recently fabricated a high performance InAs/GaSb SLS detector with a P on N polarity and a 320 times 256 MWIR FPA with a noise equivalent temperature difference of 24 mK at 77K. In the quantum dots in a well (DWELL) heterostructure, InAs quantum dots are placed in a thin InGaAs quantum well that is in turn placed in a GaAs matrix. three-color DWELL detectors, operating at 78K, with spectral response in the MWIR (lambda p1 ~ 4 mum), LWIR (lambda p2 ~ 8 mum) and VLWIR (lambda p3 ~ 23 mum) regime have been fabricated in our group. Recently, we have fabricated the first long wave infrared and two-color quantum dot focal plane array (320times256

关键词： Detectors Quantum dots Photodiodes Superlattices Nanoscale devices Temperature measurement Dark current

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Evaluation of an Integral Injection Molded Housing for High Power Density Synchronous Machines with Concentrated Single-Tooth Winding

Evaluation of an Integral Injection Molded Housing for High ...

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International Electric Drives Production conference (EDPC)

作者： Andreas Langheck Steffen Reuter Oleg Saburow Robert Maertens Florian Wittemann Lars Fredrik Berg Martin Doppelbauer Karlsruhe Institute of Technology (KIT) Institute of Electrical Engineering Karlsruhe Germany New Drive Systems Fraunhofer Institute for Chemical Technology - ICT Karlsruhe Germany

ISBN: (纸本)9781728101491;9781728101484

the implementation of electric drivetrains into passenger vehicles is one of the promising ways for the automotive industry to reduce CO 2 fleet emissions. the most important aim for the current developments is to increase range and performance while assuring affordability for the customer. In the field of electric motor development for traction applications, great efforts are necessary in order to improve electrical machines in terms of efficiency, power density and costs. the optimization of each individual field is a subject of research. Typically, there is a conflict of interest in simultaneously optimizing efficiency, power density and costs. this work presents a new approach to optimize the three fields for electric traction motors. the new approach combines an efficient direct cooling concept with the possibility of using lightweight polymer composites for the electric motor housing. the cooling concept increases the efficiency in a wide range of operation while enabling a high maximum continuous power output from the motor. To estimate the potential of the used cooling topology, the winding is optimized for using stator slot cooling. the electric motor is thermally simulated to verify the concept. these findings are used to design the cooling channels. Finally, a molded prototype stator is built and the newly designed concept was validated in a component test setup. the direct cooling with its short thermal path between the area of heat generation to the cooling system, enables the use of thermally insulating thermosetting composite materials for the electric motor housing. In this work the feasibility and potential of manufacturing the stator housing of an electric motor in an injection molding process is investigated. the design freedom of this manufacturing process enables complex and extensive functional integration such as the direct incorporation of the cooling channels in the stator slots, the phase connectors and the coolant supply.

关键词： Cooling Stator windings Windings Copper Connectors Filling

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A wideband transimpedance amplifier with tee network topology

A wideband transimpedance amplifier with tee network topolog...

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International conference on Solid-State and Integrated Circuit Technology

作者： Rui Yang Shao-Wei Zhen You-Run Zhang Yi-Qiang Zhao Xiao Yang Bo Zhang School of Electronic Science and Engineering (National Exemplary School of Microelectronics) State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this paper, a wideband transimpedance amplifier (TIA) was proposed for high speed optical receiver chips. the proposed TIA replaces feedback resistance in conventional design with a kind of tee network circuit. Consequently, the bandwidth (BW) and phase margin (PM) of TIA are enhanced significantly. Besides, cascade current mirror was also used for improving power supply rejection ratio (PSRR). this wideband TIA was designed in standard 0.35 CMOS technology. Simulation results show that the proposed TIA has a bandwidth of 145 MHz, low frequency transimpedance gain of 93 dBΩ, phase margin of more than 66° and low frequency power supply rejection ratio (PSRR) of -157dB. And the average input referred noise current spectral density is 6. 8pA/√HZ from DC to 500 MHz. the TIA we designed dissipates only 3.5 mW with a 3.3 V power supply.

关键词： Gain Wideband Mathematical model current mirrors Simulation Power supplies optical receivers

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