Classification and reconstruction of archaeological fragments is based on the profile, which is the cross-section of the fragment in the direction of the rotational axis of symmetry. In order to segment the profile in...
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In this paper we consider how to annotate or label regions of grey-level or multispectral images based upon known labels and a set of interacting hierarchical doubly stochastic processes. The proposed model extends cu...
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Optical proximity correction (OPC) is an:essential technology for critical dimension (CD) control in Low-k1 lithography. As technology node becomes tighter, more aggressive OPC is required. However, the number of so-c...
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ISBN:
(纸本)0819463582
Optical proximity correction (OPC) is an:essential technology for critical dimension (CD) control in Low-k1 lithography. As technology node becomes tighter, more aggressive OPC is required. However, the number of so-called HOT-SPOTs is increasing dramatically. To apply OPC correctly and efficiently, we should consider the total optimization of the process in close connection with data processing, reticle and wafer fabrication process. Conventional one-dimensional CD measurement is no longer suitable for complicated two-dimensional (2D) patterns generated by OPC (e.g. JOG and SERIF). For quality assurance of mask pattern, a metrology of complicated 2D OPC patterns has been required. In our previous report, we proposed a lithography simulation based on edge extraction from a fine pixel SEM image of an actual photomask. This method is very effective for evaluating quality of 2D OPC mask patterns. Employing the method, we developed a system for guaranteeing 2D OPC patterns before shipping the mask to a wafer factory (Fig. 1). In PMJ2005, we presented some specifications required for an SEM, which was one of the key factors of this method.((1)) We estimated how factors such as field of image, image resolution, positioning error, and image magnification affect lithography simulation based on fine pixel SEM image. For mask pattern quality assurance of hp65, we found that the field of image of larger than 16um square, the pixel size of less than 3nm, the positioning error of within +/-1um and the magnification error of less than 0.3% were acceptable (Table 1). Under these conditions, wafer image can be predicted with sufficient accuracy by the simulation. And then, in BACUS2005, we reported on a new SEM that was able to satisfy these specifications. ((2)) In this paper, we report some evaluation results of distortion caused by not only magnification error but also rotation and position error using actual fine pixel SEM image. We will also present our evaluation results of t
We exploit the retrieval of visual information from biomedical scientific publication databases. Therefore, we consider the use of domain specific genres to automatically subdivide large image databases into smaller, ...
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A rapid algorithm of searching for similar images to an object image in a set of registered images is proposed. Provided that correlations of all the pairs of registered images in advance, we can derive a constraint i...
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We present a new method to register high and low resolution color images of the retina as well as high resolution angiographies. The registration method is based on global point mapping with blood vessel bifurcations ...
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This paper presents a novel method to render shifting (parallax) and focussing effects on object in a scene for generating a virtual view image with arbitrary focus. Two differently focused images of a same scene - ne...
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The automatic recognition of video clips is an important capability with applications in broadcast monitoring for content theft and adherence to advertisement campaign. In this paper, we present an approach for video ...
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A new method based on MLE-OED is proposed for unsupervised image segmentation of multiple objects which have fuzzy edges. It adjusts the parameters of a mixture of Gaussian distributions via minimizing a new loss func...
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MRI examinations may be used to monitor the progress of neurological disease. Arising structural changes can then be quantified using non-rigid registration procedures. However, the interpretation of the resulting lar...
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