The proceedings contain 38 papers. The topics discussed include: training of digital predistortion based on signal-to-distortion-ratio measurements;towards energy-efficient 5G Mm-wave links: exploiting broadband Mm-wa...
ISBN:
(纸本)9781509063833
The proceedings contain 38 papers. The topics discussed include: training of digital predistortion based on signal-to-distortion-ratio measurements;towards energy-efficient 5G Mm-wave links: exploiting broadband Mm-wave Doherty power amplifier and multi-feed antenna with direct on-antenna power combining;a linearization technique for bipolar amplifiers based on derivative superposition;60 GHz concurrent dual-polarization RX front-end in SiGe with antenna-IC co-integration;ultra low power analog design and technology for artificial neurons;a novel compact balanced reflect-type vector modulator topology;240 GHz RF-MEMS switch in a 0.13 μm SiGe bicmostechnology;CMOS beyond Si: nanometer-scale III-V MOSFETs;performance improvement of a monolithically integrated c-band receiver enabled by an advanced photonic bicmos process;a multimode 5-6 GHz SiGe bicmos PA design powers emerging wireless LAN radio standards;operation of SiGe HBTs at cryogenic temperatures;thin-film layers with interfaces that reduce RF losses on high-resistivity silicon substrates;SiGe HBT/CMOS process thermal budget co-optimization in a 55-nm CMOS node;and 0.13-μm SiGe bicmostechnology with more-than-Moore modules.
This Special Section of the IEEE Journal of Solid-State circuits includes extended papers that were presented at the 29th IEEE bipolar/bicmos circuits and technology meeting (BCTM) held on October 26–28, 2015, in Bos...
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This Special Section of the IEEE Journal of Solid-State circuits includes extended papers that were presented at the 29th IEEE bipolar/bicmos circuits and technology meeting (BCTM) held on October 26–28, 2015, in Boston, MA, USA.
The proceedings contain 37 papers. The topics discussed include: Ge-on-insulator lateral bipolar transistors;a 76- to 81-GHz packaged single-chip transceiver for automotive radar;why is there no internal collector res...
ISBN:
(纸本)9781509004843
The proceedings contain 37 papers. The topics discussed include: Ge-on-insulator lateral bipolar transistors;a 76- to 81-GHz packaged single-chip transceiver for automotive radar;why is there no internal collector resistance in HICUM?;advantages of SiGe-pnp over Si-pnp for analog and RF enhanced Cbicmos and complementary bipolar design usage;DC and RF breakdown voltage characteristics of SiGe HBTs for WiFi P a applications;current regulator with energy limitation in theunpowered state featuring bipolar discharge path;the broadband Darlington amplifier as a simple benchmark circuit for compact model verification at mm-wave frequency;an improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs;and scalable sensor platform with multi-purpose fully-differential 61 and 122 GHz transceivers for MIMO radar applications.
The proceedings contain 40 papers. The topics discussed include: a 17 GHz programmable frequency divider for space applications in a 130 nm SiGe bicmostechnology;SiGe HBT and bicmos process integration optimization w...
ISBN:
(纸本)9781467385510
The proceedings contain 40 papers. The topics discussed include: a 17 GHz programmable frequency divider for space applications in a 130 nm SiGe bicmostechnology;SiGe HBT and bicmos process integration optimization within the DOTSEVEN project;110-140GHz single-chip reconfigurable radar front-end with on-chip antenna;a 92GHz bandwidth SiGe bicmos HBT TIA with less than 6dB noise figure;A 24GHz signal generator with 30.8 dBm output power based on a power amplifier with 24.7 dBm output power and 31% PAE in SiGe;SiGe HBT modeling for mm-wave circuit design;a 135-150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe bicmostechnology;an injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe bicmos;single-chip transmit-receive module with a fully integrated differential RFMEMS antenna switch and a high-voltage generator for F-band radars;and 90nm SiGe bicmos analog front-end circuits for 80GHz bandwidth large-swing transmitters.
A transimpedance amplifier with a bandwidth of 94 GHz is presented and on chip measurements are discussed. The measured gain of the amplifier at low frequencies is 55 dBO, peaking to 61 dBO at 78 GHz. The circuit was ...
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ISBN:
(纸本)9798350343304
A transimpedance amplifier with a bandwidth of 94 GHz is presented and on chip measurements are discussed. The measured gain of the amplifier at low frequencies is 55 dBO, peaking to 61 dBO at 78 GHz. The circuit was designed in a cutting edge 55nm SiGe bicmostechnology, occupies a pad limited area of 0.02 mm2, and consumes 14 mA of current from a 3.3 V supply. The circuit achieves an average input referred current noise of 11 pA/v Hz, making it suitable for future high speed optical receivers.
The proceedings contain 46 papers. The topics discussed include: a low-power SiGe feedback amplifier with over 110GHz bandwidth;an active frequency doubler with DC-100GHz range;a true-RMS integrated power sensor for o...
ISBN:
(纸本)9781479972302
The proceedings contain 46 papers. The topics discussed include: a low-power SiGe feedback amplifier with over 110GHz bandwidth;an active frequency doubler with DC-100GHz range;a true-RMS integrated power sensor for on-chip calibration;microwave noise properties of heterojunction bipolar transistors;high-speed, waveguide Ge PIN photodiodes for a photonic bicmos process;an SiGe heterojunction bipolar transistor with very high open-base breakdown voltage;examination of horizontal current bipolar transistor (HCBT) reliability characteristics;degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions;device-to-circuit interactions in SiGe technology: challenges and opportunities;and a broad-band bicmos transmitter front-end for 27-36GHz phased array systems.
The five papers in this special section were presented at the 2013 IEEE bipolar/bicmos circuits and technology meeting that was held from September 30th to October 3rd in Bordeaux, France. The five papers selected ref...
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The five papers in this special section were presented at the 2013 IEEE bipolar/bicmos circuits and technology meeting that was held from September 30th to October 3rd in Bordeaux, France. The five papers selected reflect the recent advances in integrated circuit designs implemented in bicmos and SiGe technologies.
The high linearity downconversion active mixers are demonstrated in the horizontal current bipolar transistor (HCBT) technology. The HCBTs fabricated by uniform n-collector doping profile, long hydrofluoric (HF) etchi...
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The high linearity downconversion active mixers are demonstrated in the horizontal current bipolar transistor (HCBT) technology. The HCBTs fabricated by uniform n-collector doping profile, long hydrofluoric (HF) etching, and long tetramethylammonium hydroxide (TMAH) etching are shown to be optimal for mixer performance. The circuits fabricated with the optimum HCBTs in 180-nm bipolar complementary metal-oxide semiconductor (bicmos) process are packaged and measured, resulting in the best HCBT mixer characteristics published so far. The HCBT mixer uses a double-balanced Gilbert cell core with an integrated local oscillator (LO) buffer driver and employs an open-collector output topology. It provides broadband operation and frequency downconversion, measured up to 3 GHz, with a maximum power consumption of 550 mW at the peak linearity performance. The measured peak input third-order intercept point (IIP3) and conversion gain (CG) of 30.3 dBm and 6.0 dB, respectively (at 900-MHz input), are suitable for the base station transceivers and wireless infrastructure. The HCBT technology represents a low-cost bicmos platform capable of meeting the various requirements in the fabrication of the radio frequency integrated circuits (RFICs).
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