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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是101-110 订阅

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Ku-Band Integrated Building Blocks for Phased-Array Transmitter Design in SiGe:C bicmos

Ku-Band Integrated Building Blocks for Phased-Array Transmit...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Ansari, Kimia T. Plett, Calvin Gamand, Patrice Carleton Univ Dept Elect Ottawa ON K1S 5B6 Canada NXP Semicond CTO Off Caen France

ISBN: (纸本)9781467385510

In this paper, the design methodology and layout considerations of a multiphase Rotary Travelling-Wave Voltage-Controlled Oscillator (RTW-VCO) and a high gain three-stage Power Amplifier (PA) for a phased-array transmitter application are presented. Using a 0.25 mu m bicmos process, the fabricated VCO gives access to 8 different phases in steps of 45 degrees and it achieves a tuning range of 1 GHz for measured output power of -6.5 dBm at 17 GHz. The three-stage PA shows 25 dB of gain for 16-20 GHz of bandwidth, and it achieves saturated output power of 7.5 dBm.

关键词： bicmos high-frequency phased-array rotary travelling-wave oscillator power amplifier

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0.18 μm SiGe bicmos technology for Fully-Integrated Front-End ICs Capable of Sub-300fs R_on x C_off Switch Performance

0.18 μm SiGe BiCMOS Technology for Fully-Integrated Front-E...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Moen, Kurt A. Preisler, Edward Hurwitz, Paul Zheng, Jie McArthur, Warren Racanelli, Marco TowerJazz 4321 Jamboree Rd Newport Beach CA 92660 USA

ISBN: (纸本)9781467385510

We introduce a 0.18 mu m SiGe bicmos technology that is designed for front-end IC (FEIC) integration on a single chip. This technology employs a high-resistivity substrate and offers high-performance RF switch and low-noise amplifier (LNA) devices alongside SiGe HBTs optimized for WiFi and cellular power amplifiers (PAs). An optional through-silicon via (TSV) is also available for a low-inductance ground connection. Data measured on transmission lines, NFET RF switch branches, NFET and SiGe NPN LNA devices, and SiGe NPN PA devices built in this technology is presented and discussed.

关键词： SiGe bicmos high-resistivity FEIC RF switch PA LNA

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A 105-GHz, Supply-Scaled Distributed Amplifier in 90-nm SiGe bicmos

A 105-GHz, Supply-Scaled Distributed Amplifier in 90-nm SiGe...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Fang, Kelvin Levy, Cooper Buckwalter, James F. Univ Calif San Diego Dept Elect & Comp Engn La Jolla CA 92093 USA

ISBN: (纸本)9781467385510

Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe bicmos process and occupies an area of 2.65 mm x 0.57 mm. Total dc power consumed is 297 mW.

关键词： Distributed amplifiers millimeter-wave amplifiers wideband power amplifiers SiGe bicmos

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A Monolithically Integrated Opto-Electronic Clock Converter in Photonic SiGe-bicmos technology

A Monolithically Integrated Opto-Electronic Clock Converter ...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Krueger, B. Makon, R. E. Landolt, O. Krune, E. Knoll, D. Lischke, S. Schulze, J. Rohde & Schwarz GmbH & Co KG Munich Germany Tech Univ Berlin Berlin Germany Innovat High Performance Microelect IHP Frankfurt Germany Univ Stuttgart Inst Semicond Engn D-70174 Stuttgart Germany

ISBN: (纸本)9781467385510

A novel monolithic opto-electronic clock converter integrated in a photonic SiGe-bicmos technology is presented, which turns an ultrashort optical pulse train generated by a hybrid mode-locked laser into a low-jitter electrical square wave with sharp transitions. The integrated circuit includes optical waveguides as well as grating couplers, a high-bandwidth (> 30 GHz) Ge-photodiode, a frequency divider-by-two implemented by SiGe bipolar transistors, photodiode characterization circuits and an optical monitoring path. The integrated circuit has been successfully tested at laser pulse repetition rates of up to 10 GHz. At this pulse repetition rate, the generated 5 GHz electrical square wave signal features a wideband phase noise floor <-160 dBc/Hz and an jitter t(j) < 1 fs while integrating the phase noise at offset frequencies between 2 kHz and 30 MHz.

关键词： PULSE REPETITION RATE bicmos technology Phase noise Photoelectricity Hybrid modes Timing devices Converters photonic Optical waveguides Integrated circuits Gratings Grates offset frequency

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A 17GHz Programmable Frequency Divider for Space Applications in a 130 nm SiGe bicmos technology

A 17GHz Programmable Frequency Divider for Space Application...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Herzel, Frank Borngraeber, Johannes Ergintav, Arzu Kucharski, Maciej Kissinger, Dietmar IHP Technol Pk 25 D-15236 Frankfurt Oder Germany Tech Univ Berlin D-10587 Berlin Germany

ISBN: (纸本)9781467385510

A programmable frequency divider for fractional-N frequency synthesizers is presented. The input frequency range is from DC to 17 GHz for divider ratios from 16 to 255. We show by analysis and time-domain simulations that the quantization noise folding in a fractional-N PLL can be reduced tremendously, if a prescaler between VCO and programmable divider can be avoided by using this high-speed divider. The programmable divider was manufactured in a 130nm SiGe bicmos technology. Robust operation is obtained from a supply voltage VCC=2.3-3.9V. The measured divider phase noise floor for a 100MHz output signal is as low as -156 dBc/Hz. The chip occupies 1.7 mm(2) including bondpads and draws 154mA from a 2.3V supply.

关键词： Divider Device Component frequency dividers Space applications PROGRAMMABLE Prescaler Device Component SiGe bicmos frequency synthesizers outgoing signal frequency ranges A 17 Voltage controlled oscillators

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SiGe HBT and bicmos Process Integration Optimization within the DOTSEVEN Project

SiGe HBT and BiCMOS Process Integration Optimization within ...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Boeck, J. Aufinger, K. Boguth, S. Dahl, C. Knapp, H. Liebl, W. Manger, D. Meister, T. F. Pribil, A. Wursthorn, J. Lachner, R. Heinemann, B. Ruecker, H. Fox, A. Barth, R. Fischer, G. Marschmeyer, S. Schmidt, D. Trusch, A. Wipf, C. Infineon Technol Neubiberg Germany IHP Frankfurt Oder Germany

ISBN: (纸本)9781467385510

This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe bicmos technology with f(T) of 250 GHz and f(max) of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHP's advanced SiGe HBT module with epitaxial base link for future industrial bicmos platforms is demonstrated by integrating it in Infineon's 130 nm process resulting in an f(max) of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an f(max) of 570 GHz for the first time using an HBT concept with nonselective epitaxial base deposition and an elevated extrinsic base.

关键词： SiGe HBT bicmos DOTSEVEN

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A 92GHz Bandwidth SiGe bicmos HBT TIA with less than 6dB Noise Figure

A 92GHz Bandwidth SiGe BiCMOS HBT TIA with less than 6dB Noi...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Vasilakopoulos, K. Voinigescu, S. P. Schvan, P. Chevalier, P. Cathelin, A. Univ Toronto ECE Dept Toronto ON M5S 3G4 Canada Ciena Corp Ottawa ON K2H 8E9 Canada STMicroelectronics Crolles France

ISBN: (纸本)9781467385510

A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mV(pp) input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of +/- 1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50 Omega output buffer, occupies 0.138 mm(2) and consumes 21 mA from a 2.3V supply.

关键词： heterojunction bipolar transistors (HBT) low-noise transimpedance amplifier noise matching SiGe bicmos

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A Low-Power bicmos 50 Gbps G_m-Boosted Dual-Feedback Transimpedance Amplifier

A Low-Power BiCMOS 50 Gbps G<i><sub>m</sub></i>-Boosted Dual...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Mohammadnezhad, Hossein Bidhendi, Alireza Karimi Green, Michael M. Heydari, Payam Univ Calif Irvine Nanoscale Commun Integrated Circuits NCIC Labs Irvine CA 92697 USA

ISBN: (纸本)9781467385510

A single-channel 50 Gbps transimpedance amplifier (TIA) in 130nm SiGe bicmos process is presented. The proposed TIA is comprised of a g(m)-boosted dual-feedback common-base, an RC-degenerated common emitter and an inductively degenerated emitter-follower. Accounting for 100 fF photodiode's input capacitance, the TIA achieves a measured transimpedance gain of 41 dB Omega and a measured RMS input-referred current-noise spectral density of 35.4 pA/root Hz over a wide 3dB-bandwidth greater than 50 GHz. It achieves an open eye at 50 Gbps with an RMS jitter of 2.3 ps (including the jitter contribution of test fixture). The TIA chip occupies 1x0.575 mm(2) (including pads) of die area and dissipates 24 mW from a 2 V supply voltage (i.e., less than 0.5 mW per 1 Gbps).

关键词： Transhnpedance amplifier (HA) responsivity sensitivity eye diagram jitter power penalty feedback dual feedback common-base photodiode dynamic range

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90nm SiGe bicmos Analog Front-End circuits for 80GHz Bandwidth Large-Swing Transmitters

90nm SiGe BiCMOS Analog Front-End Circuits for 80GHz Bandwid...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Hoffman, J. Gosse, J. R. Shopov, S. Voinigescu, S. P. Pekarik, J. J. Camillo-Castillo, R. Jain, V. Harame, D. Univ Toronto ECE Dept Toronto ON M5S 3G4 Canada IBM Corp Essex Jct VT 05452 USA Global Foundries Malta NY 12020 USA

ISBN: (纸本)9781467385510

An 80GHz bandwidth distributed amplifier with 7V(pp) differential output swing and P-O1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe bicmos process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.

关键词： bandpass filter distributed amplifier fiberoptic transmitters instrumentation amplifier FET-HBT cascode linear broadband amplifier modulator driver PIN diode SiGe bicmos switch

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Nanoscale SiGe bicmos technologies: From 55 nm reality to 14 nm opportunities and challenges

Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14...

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bipolar/bicmos circuits and technology meeting

作者： P. Chevalier G. Avenier E. Canderle A. Montagné G. Ribes V.T. Vu STMicroelectronics Silicon Technology Development Crolles France

This paper looks back to the development of highspeed bicmos technologies in STMicroelectronics for the past 15 years and discusses the perspectives for next generations through the CMOS angle. Opportunities and challenges of nanoscale bicmos technologies are reviewed and bicmos055 results are presented to demonstrate the feasibility at 55 nm node. Perspectives to offer FDSOI bicmos technologies at 28 nm or 14 nm nodes are analyzed too.

关键词： CMOS integrated circuits bicmos integrated circuits Silicon germanium Heterojunction bipolar transistors Logic gates CMOS technology

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