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Millimeter-wave integrated circuits for wireless transceivers in bicmos technologies

Millimeter-wave integrated circuits for wireless transceiver...

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bipolar/bicmos circuits and technology meeting

作者： Payam Heydari Nanoscale Communication IC (NCIC) Labs. University of California Irvine CA

This invited paper provides an overview of important attributes of a bicmos process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of bicmos performance compared to Silicon CMOS or III-V technologies, system-level considerations and circuit design issues will be illustrated. Several case studies including mm-wave integrated circuits designed and fabricated in bicmos processes will be introduced to provide experimental proof to these comparative studies.

关键词： Dual band Wireless communication Radar bicmos integrated circuits CMOS integrated circuits Radio frequency MIMO

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High-performance bicmos Si photonics platform

High-performance BiCMOS Si photonics platform

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bipolar/bicmos circuits and technology meeting

作者： D. Knoll S. Lischke A. Awny M. Kroh E. Krune C. Mai A. Peczek D. Petousi S. Simon K. Voigt G. Winzer R. Barth L. Zimmermann IHP Frankfurt Germany Institut für Hochfrequenz- und Halbleiter-Systemtechnologien Technical University Berlin Germany

Photonic bicmos is a novel technology for fabricating electronic-photonic integrated circuits. Broadband silicon photonics devices such as germanium photodiodes and depletion type Mach-Zehnder modulators were monolithically integrated in a high performance SiGe bicmos baseline process. Integration aspects and first examples of demonstrator circuits shall be reviewed.

关键词： bicmos integrated circuits Photonics Silicon Modulation Silicon germanium Substrates Photodiodes

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0.18µm SiGe bicmos technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance

0.18µm SiGe BiCMOS technology for fully-integrated front-en...

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bipolar/bicmos circuits and technology meeting

作者： Kurt A. Moen Edward Preisler Paul Hurwitz Jie Zheng Warren McArthur Marco Racanelli TowerJazz Newport Beach California

We introduce a 0.18μm SiGe bicmos technology that is designed for front-end IC (FEIC) integration on a single chip. This technology employs a high-resistivity substrate and offers high-performance RF switch and low-noise amplifier (LNA) devices alongside SiGe HBTs optimized for WiFi and cellular power amplifiers (PAs). An optional through-silicon via (TSV) is also available for a low-inductance ground connection. Data measured on transmission lines, NFET RF switch branches, NFET and SiGe NPN LNA devices, and SiGe NPN PA devices built in this technology is presented and discussed.

关键词： Silicon germanium Switches Substrates Radio frequency Heterojunction bipolar transistors bicmos integrated circuits Performance evaluation

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bicmos 7.5 µA power-on reset pulse generator circuit with precise threshold level and hysteresis

BiCMOS 7.5 µA power-on reset pulse generator circuit with p...

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bipolar/bicmos circuits and technology meeting

作者： Filipe Tabarani Hermann Schumacher Institute of Electron Devices and Circuits Ulm University Ulm Germany

The design and characterization of a robust pulse generator power-on reset circuit, with accurate bandgap based thresholds, brown-out event detection capability and hysteresis, realized in 0.25 μm SiGe bicmos technology is presented. The resulting circuit consumes 7.5 μA and occupies 360×440nm 2 area. Measured reset pulses longer than 340 μs are generated. The design was simulated with a voltage and temperature range of 2.25 to 2.75V and -40 to +120°C, respectively.

关键词： Pulse generation Decision support systems Photonic band gap Threshold voltage Detectors Power demand Logic gates

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An injection-locked 8.5 GHz VCO with decade-wide programmable locking range in SiGe bicmos

An injection-locked 8.5 GHz VCO with decade-wide programmabl...

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bipolar/bicmos circuits and technology meeting

作者： Theodoros Chalvatzis Broadcom Corporation Athens Greece

This paper presents a low-noise subharmonically injection-locked VCO with programmable locking range. A pulse generator with programmable duty cycle converts the external reference signal into a narrow pulse that locks the VCO. Record low phase noise of -115 dBc/Hz at 100 kHz offset is achieved by combining a low-noise CML pulse generator with a cross-coupled VCO. The VCO features programmable locking range from 10 to 500 MHz. Fabricated in a production SiGe bicmos technology, the circuit demonstrates record low phase noise, both at close-in and far-out frequency offsets from the carrier.

关键词： Voltage-controlled oscillators Phase noise Delays Pulse generation Logic gates Injection-locked oscillators Harmonic analysis

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A 105-GHz, supply-scaled distributed amplifier in 90-nm SiGe bicmos

A 105-GHz, supply-scaled distributed amplifier in 90-nm SiGe...

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bipolar/bicmos circuits and technology meeting

作者： Kelvin Fang Cooper Levy James F. Buckwalter Department of Electrical and Computer Engineering University of California San Diego La Jolla CA University of California San Diego La Jolla CA US

Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe bicmos process and occupies an area of 2.65 mm × 0.57 mm. Total dc power consumed is 297 mW.

关键词： Power amplifiers Bandwidth Gain Silicon germanium bicmos integrated circuits Capacitance Power generation

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A 92GHz bandwidth SiGe bicmos HBT TIA with less than 6dB noise figure

A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noi...

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bipolar/bicmos circuits and technology meeting

作者： K. Vasilakopoulos S. P. Voinigescu P. Schvan P. Chevalier A. Cathelin ECE Department University of Toronto Toronto ON Canada Ciena Corporation Ottawa ON Canada STMicroelectronics Crolles France

A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mV pp input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of ±1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50Ω output buffer, occupies 0.138 mm 2 and consumes 21 mA from a 2.3V supply.

关键词： Heterojunction bipolar transistors Silicon germanium Bandwidth Gain Current density bicmos integrated circuits Broadband communication

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A 17 GHz programmable frequency divider for space applications in a 130 nm SiGe bicmos technology

A 17 GHz programmable frequency divider for space applicatio...

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bipolar/bicmos circuits and technology meeting

作者： Frank Herzel Johannes Borngräber Arzu Ergintav Maciej Kucharski Dietmar Kissinger IHP Frankfurt Germany Technische Universität Berlin Berlin Germany

A programmable frequency divider for fractional-N frequency synthesizers is presented. The input frequency range is from DC to 17GHz for divider ratios from 16 to 255. We show by analysis and time-domain simulations that the quantization noise folding in a fractional-N PLL can be reduced tremendously, if a prescaler between VCO and programmable divider can be avoided by using this high-speed divider. The programmable divider was manufactured in a 130nm SiGe bicmos technology. Robust operation is obtained from a supply voltage VCC=3D2.3-3.9 V. The measured divider phase noise floor for a 100 MHz output signal is as low as -156dBc/Hz. The chip occupies 1.7 mm 2 including bondpads and draws 154mA from a 2.3V supply.

关键词： Phase noise Phase locked loops Frequency conversion Silicon germanium bicmos integrated circuits Frequency synthesizers Logic gates

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Ku-band integrated building blocks for phased-array transmitter design in SiGe:C bicmos

Ku-band integrated building blocks for phased-array transmit...

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bipolar/bicmos circuits and technology meeting

作者： Kimia T. Ansari Calvin Plett Patrice Gamand Department of Electronics Carleton University Ottawa Canada CTO Office NXP Semiconductors Caen France

In this paper, the design methodology and layout considerations of a multiphase Rotary Travelling-Wave Voltage-Controlled Oscillator (RTW-VCO) and a high gain three-stage Power Amplifier (PA) for a phased-array transmitter application are presented. Using a 0.25 μm bicmos process, the fabricated VCO gives access to 8 different phases in steps of 45 degrees and it achieves a tuning range of 1 GHz for measured output power of -6.5 dBm at 17 GHz. The three-stage PA shows 25 dB of gain for 16-20 GHz of bandwidth, and it achieves saturated output power of 7.5 dBm.

关键词： Power amplifiers Power generation Gain Semiconductor device measurement Oscillators Radio transmitters

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A monolithically integrated opto-electronic clock converter in photonic SiGe-bicmos technology

A monolithically integrated opto-electronic clock converter ...

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bipolar/bicmos circuits and technology meeting

作者： B. Krueger R. E. Makon O. Landolt E. Krune D. Knoll S. Lischke J. Schulze Rohde & Schwarz GmbH & Co. KG Munich Germany University of Stuttgart Institute for Semiconductor Engineering Stuttgart Germany Technische Universitaet Berlin Berlin Germany Innovations for High-Performance Microelectronics (IHP) Germany

A novel monolithic opto-electronic clock converter integrated in a photonic SiGe-bicmos technology is presented, which turns an ultrashort optical pulse train generated by a hybrid mode-locked laser into a low-jitter electrical square wave with sharp transitions. The integrated circuit includes optical waveguides as well as grating couplers, a high-bandwidth (> 30 GHz) Ge-photodiode, a frequency divider-by-two implemented by SiGe bipolar transistors, photodiode characterization circuits and an optical monitoring path. The integrated circuit has been successfully tested at laser pulse repetition rates of up to 10 GHz. At this pulse repetition rate, the generated 5 GHz electrical square wave signal features a wideband phase noise floor j

关键词： Optical pulses Optical variables measurement Optical attenuators Optical feedback Optical distortion Optical buffering Optical waveguides

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