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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Vera, Leonardo Long, John R. Gross, B. Jeffrey Delft Univ Technol Elect Res Lab DIMES NL-2600 AA Delft Netherlands IBM Microelect Essex Jct VT USA

ISBN: (纸本)9781479972302

A broadband, active doubler based on asymmetrically biased differential pairs delivers conversion gain (CG) from DC to 100GHz. Measured CG is >10dB up to 50GHz, >6dB up to 80GHz, and >0dB up to 100GHz. Second-harmonic (4x the input) suppression is -28dBc at 50GHz. Implemented in a 90nm SiGe technology, the 0.371mm(2) multiplier core consumes 25mA from a 4.5V supply.

关键词： frequency doubler active multiplier SiGe-HBT SiGe-bicmos technology millimeter-wave integrated circuits

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High-Resistivity SiGe bicmos technology Development

High-Resistivity SiGe BiCMOS Technology Development

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Stamper, Anthony Camillo-Castillo, Renata Ding, Hanyi Dunn, James Jaffe, Mark Jain, Vibhor Joseph, Alvin McCallum-Cook, Ian Newton, Kim Parthasarathy, Shyam Rassel, Robert Schmidt, Nicholas Srihari, Srikanth Wolf, Randy Zierak, Michael IBM Corp Microelect Div Essex Jct VT 05452 USA IBM Microelect Div Bangalore Karnataka India

ISBN: (纸本)9781479972302

IBM first qualified a 0.35 mu m generation 1000 Omega-cm high resistivity substrate (HiRES) SiGe bicmos technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf front-end-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Omega-cm, 1st generation HiRES, and 2nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed.

关键词： High-resistivity substrate SiGe bicmos front-end-IC switch PA LNA

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High-speed, waveguide Ge PIN photodiodes for a photonic bicmos process

High-speed, waveguide Ge PIN photodiodes for a photonic BiCM...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Lischke, S. Knoll, D. Zimmermann, L. Scheit, A. Mai, C. Trusch, A. Voigt, K. Kroh, M. Kurps, R. Ostrovskyy, P. Yamamoto, Y. Korndoerfer, F. Peczek, A. Winzer, G. Tillack, B. IHP D-15236 Frankfurt Oder Germany Tech Univ Berlin Inst Hochfrequenz & Halbleiter Syst Technol D-10587 Berlin Germany

ISBN: (纸本)9781479972302

Waveguide-coupled, Ge lateral pin photodiodes featuring bandwidths of more than 50GHz and 40Gbps functionality are presented. Non-doping implantations are applied that allow one to reach this performance even under the effect of thermal steps acting when the diodes are integrated in a high-performance bicmos process. The effect of these implants is to lower the minority-carrier lifetime(s) and in this way, to reduce bandwidth degradation by minority-carrier diffusion in non-depleted, weakly doped regions.

关键词： bicmos Ge photodiode Silicon photonics

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A G-Band Four-Element Butler Matrix in 0.13 μm SiGe bicmos technology

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IEEE JOURNAL OF SOLID-STATE circuits 2014年第9期49卷 1916-1926页

作者： Elkhouly, Mohamed Mao, Yanfei Meliani, Chafik Scheytt, J. Christoph Ellinger, Frank IHP D-15236 Frankfurt Germany Univ Paderborn Heinz Nixdorf Inst D-33102 Paderborn Germany Tech Univ Dresden Dresden Univ Technol Chair Circuit Design & Network Theory D-01069 Dresden Germany

This paper presents the design and characterization of a 220-240 GHz four-element Butler matrix beam switching chip. It is realized in 0.13 mu m SiGe bicmos technology. The chip features four 220 GHz amplifiers with 9 dB of gain followed by the Butler matrix core. A single-pole-four-throw (SP4T) switch is integrated to switch between the different beam directions. Finally an amplifier is used to compensate the losses of the matrix core and the switch. The chip exhibits a 2 dB of insertion loss and draws 104 mA from a 3.3 V supply. It also shows maximum phase error of 15 degrees from the ideal phase states and less than 4 dB rms amplitude variations. The chip occupies 1.5 x 2.4 mm(2) silicon area.

关键词： bicmos Butler matrix millimeter-wave phased array SiGe

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2011 bipolar/bicmos circuits and technology meeting

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IEEE Journal of Solid-State circuits 2011年第2期46卷 548-548页

Provides notice of upcoming conference events of interest to practitioners and researchers.

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K-Band Digitally Controlled Oscillator with Integrated Divide-by-16 Divider Chain for ADPLL Applications

K-Band Digitally Controlled Oscillator with Integrated Divid...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Maxey, Christopher Raman, Sanjay Virginia Tech Bradley Dept ECE Arlington VA 22203 USA

ISBN: (纸本)9781479972302

This paper presents the design and measurements of a differential K-band digitally-controlled oscillator (DCO) utilizing a tunable-dielectric resonator structure with an integrated divide-by-16 divider chain for use in an all-digital phase locked loop. The prototype differential oscillator exhibits 256 digitally-controlled states with the LSB corresponding to similar to 700 kHz of frequency tuning. At a 1 MHz offset, the simulated divider output phase noise is -104 dBc/Hz. The divider chain includes four divide-by-two stages in series for a final division ratio of 16. To our knowledge, this is the first published tunable-dielectric DCO and divider chain integrated onto a single chip and implemented in a SiGe bicmos process.

关键词： all-digital phase-locked loop digitally controlled oscillator Miller divider SiGe bicmos static divider

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A Broad-band bicmos Transmitter Front-end for 27-36GHz Phased Array Systems

A Broad-band BiCMOS Transmitter Front-end for 27-36GHz Phase...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Pei, Yu Chen, Ying Leenaerts, Domine M. W. NXP Semicond Eindhoven Netherlands

ISBN: (纸本)9781479972302

A 27-36 GHz wide-band phased array TX frontend is demonstrated in a 0.25um SiGe:C bicmos process. The TX front-end presents a saturation power more than 12.5dBm across 9GHz bandwidth. The front-end provides variable phase shift from 0 degrees similar to 360 degrees with similar to 10 degrees resolution, and the relative phase shift remains constant in the desired band. A 2-bit amplitude resolution is available for advanced beamforming algorithms. The wide-band PA can be applied in saturation mode and in linear mode due to its high linearity with an OIP3 over 21dBm.

关键词： beam steering broadband amplifiers phased arrays phase shifters power amplifiers

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Temperature Impact on the In-Situ S-Parameter Calibration in Advanced SiGe Technologies

Temperature Impact on the In-Situ S-Par...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Rumiantsev, Andrej Doerner, Ralf Korndoerfer, Falk MPI Corp Chu Pei City Hsinchu County Taiwan Brandenburg Univ Technol BTU Cottbus Germany Ferdinand Braun Inst FBH Leibniz Inst Hoechstfrequenztech Berlin Germany Innovat High Performance Microelect IHP Leibniz Inst Innovat Mikroelekt Frankfurt Oder Germany

ISBN: (纸本)9781479972302

This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards. The standards were realized in IHP's SG13 130 nm SiGe:C bicmos process. The measurement experiment was performed for the frequency range up to 110 GHz. We demonstrate that the calibration error caused by thermal instability of electrical characteristic of standards is in order of magnitude of the system drift error and, thus, negligible.

关键词： S-parameter calibration device characterization mm-wave measurements bicmos

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A Low-Power and Ultra-Compact W-band Transmitter Front-End in 90 nm SiGe bicmos technology

A Low-Power and Ultra-Compact W-band Transmitter Front-End i...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Chi, Taiyun Park, Jong Seok Schmid, Robert L. Ulusoy, A. Cagri Cressler, John D. Wang, Hua Georgia Tech Sch Elect & Comp Engn Atlanta GA 30332 USA

ISBN: (纸本)9781479972302

This paper presents a W-band direct-conversion transmitter front-end implemented in SiGe bicmos technology. The transmitter consists of an up-conversion mixer, a power amplifier (PA), and all the required on-chip passive matching networks. A differential cascode structure with capacitive neutralization is used in the PA design for improved gain and reverse isolation. W-band on-chip transformers are extensively utilized to realize low-loss and ultra-compact passive matching networks. This design strategy enables the whole transmitter core to fit within a 600 um x 250 um die area. The transmitter achieves +7.2 dBm peak output power and 18 dB conversion gain at 87 GHz, with 73.5 mW total power consumption. Modulation tests with QPSK and 16QA1VI signals (both at 50 MSym/s) were also performed. Average EVM values of 5.9%/6.7% have been achieved at 7 dB output power back-off for QPSK/16QAM signals, respectively.

关键词： Power amplifier SiGe bicmos integrated circuits transmitter front-end up-conversion mixer W-band

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Investigation of HBT layout impact on f_T doubler performance for 90nm SiGe HBTs

Investigation of HBT layout impact on fT d...

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IEEE bipolar/bicmos circuits and technology meeting (BCMT)

作者： Jain, Vibhor Gross, B. J. Pekarik, J. J. Adkisson, J. W. Camillo-Castillo, R. A. Liu, Qizhi Gray, P. B. Vallett, A. Divergilio, A. W. Zetterlund, B. K. Harame, D. L. IBM Corp Essex Jct VT 05452 USA

ISBN: (纸本)9781479972302

Peak f(T) of 660GHz is reported for HBT f(T) doubler designs in IBM 90nm SiGe bicmos technology 9HP. This high performance f(T) doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved transconductance and lower thermal resistance. The impact of HBT layout on the circuit performance and trade-off between thermal resistance and f(T) is also investigated. f(T) doubler circuit can be used as a single transistor in several circuit applications like A/D converters and broadband circuits where higher performance is desired.

关键词： bicmos SiGe HBT f(T) doubler

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