A 4-element beamformer designed in 120-nm SiGe bicmostechnology for 28-GHz mobile millimeter-wave broadband system is presented in this paper. Each element of the beamformer consists of a 4-bit active phase shifter a...
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ISBN:
(纸本)9781479972302
A 4-element beamformer designed in 120-nm SiGe bicmostechnology for 28-GHz mobile millimeter-wave broadband system is presented in this paper. Each element of the beamformer consists of a 4-bit active phase shifter and a two-stage Power Amplifier (PA). A two-stage PA design with a Class-C pre-driver and a 2nd-harmonic-tuned Class-AB driver stage is adopted for high gain and high efficiency at both peak and backed-off power levels. The active phase shifter employs inphase/quadrature phase current steering and digital control of transconductance (Gm). Measurement results show a 33-dB gain, 16.5-dBm saturated output power, 15.7-dBm oP(1dB), 27.5% peak PAE and 8.2% 7-dB back-off PAE at 27 GHz for a single element. The minimum (maximum) RMS gain and phase errors across the 27-29 GHz band were 0.5 dB (3 dB) and 1.5 degrees (12 degrees). The beamformer also includes a 1: 4 power splitter and a serial interface for digital control and occupies a die area of 5.32mm(2).
This paper describes a 12 bit 1.6 GS/s pipeline ADC realized in a 0.18 mu m complementary bicmos SiGe process. The ADC consists of a four-way time-interleaved hierarchical structure and a master-slave T&H to impro...
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This paper describes a 12 bit 1.6 GS/s pipeline ADC realized in a 0.18 mu m complementary bicmos SiGe process. The ADC consists of a four-way time-interleaved hierarchical structure and a master-slave T&H to improve the dynamic performance of the individual sub-ADCs and to reduce both the converter error rate and the complexity of the required interleaving background calibration algorithms. It achieves an SFDR of 79 dBc and 66 dBc at low and high frequency inputs, respectively and an error rate of less than 10(-9), and has a power consumption of 1.15 W for the core ADC.
We present the electrical characteristics of the first 90nm SiGe bicmostechnology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f(T) and 360 GHz f(MAX) hig...
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ISBN:
(纸本)9781479972302
We present the electrical characteristics of the first 90nm SiGe bicmostechnology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f(T) and 360 GHz f(MAX) high performance SiGe HBTs, 135 GHz f(T) and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.
By using reduced pressure chemical vapor deposition（RPCVD）,the high strained,Ge‐graded Si Ge film growth has been *** film was used as a base of the HBT（Heterojunction bipolar Transistor） developed in 0.35 μm Si...
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By using reduced pressure chemical vapor deposition（RPCVD）,the high strained,Ge‐graded Si Ge film growth has been *** film was used as a base of the HBT（Heterojunction bipolar Transistor） developed in 0.35 μm Si Ge Bi CMOS process technology,and made the device give good DC characteristics（β > 100） and high‐frequency performance（f = 67 GHz）,thus meeting the requirements for technical specifications in 0.35 μm Si Ge Bi CMOS process technology.
A base-band channelizer, fabricated in a 0.18um bicmos process, capable of separating an input 50 MHz bandwidth signal into 16 output 3.125 MHz bandwidth signals intended for multi-channel independent component analys...
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ISBN:
(纸本)9781479972302
A base-band channelizer, fabricated in a 0.18um bicmos process, capable of separating an input 50 MHz bandwidth signal into 16 output 3.125 MHz bandwidth signals intended for multi-channel independent component analysis (ICA) for signal classification is presented. The channelizer operates in a purely analog fashion to interface with an analog ICA system to optimize energy efficiency. Each channel within the 50 MHz bandwidth is up/down converted using active mixers and is low-pass filtered. Harmonic rejection mixers and clock predistortion techniques are employed in order to eliminate clock harmonic folding. A two-stage, quarter-band separation architecture is employed to split the 50 MHz baseband signal into 16 consecutive channels simultaneously. The measured input signal HD3 and LO 3rd-order harmonic mixing is below -40 dBc. The measured power consumption is 71.5mW from a 2.5V power supply.
This paper presents a wide-tuning frequency generation scheme based on bottom-series coupled quadrature VCO (QVCO). The low band and middle band frequency signal is generated from the QVCO while the high band signal i...
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ISBN:
(纸本)9781479972302
This paper presents a wide-tuning frequency generation scheme based on bottom-series coupled quadrature VCO (QVCO). The low band and middle band frequency signal is generated from the QVCO while the high band signal is obtained from a gilbert mixer. The tuning-range enhancement technique allows a three band frequency generation in the range from 2.4GHz to 8.4GHz without penalizing its phase noise. The VCO monolithic microwave integrated circuit (MMIC) is implemented in a 0.18 mu m SiGe bicmostechnology with 1.8 mm(2) area. The measured frequency range is 15.4% for the three bands centered at 2.5GHz, 5GHz, and 7.5GHz. The measured phase noise are -124.4dBc/Hz, -119.1dBc/Hz and -108.8dBc/Hz at 1 MHz offset for the low, middle, high band signals, separately. The measurement results demonstrate that proposed frequency generation technique can achieve wide tuning range capability as well as the low phase noise with very compact circuit.
A high performance (HP) SiGe HBT in IBM's 130nm SiGe bicmos8XP technology demonstrating peak f(T)/f(MAX) of 250/330GHz is reported for mm-wave and high performance RF/analog applications. The HBT has been develope...
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ISBN:
(纸本)9781479972302
A high performance (HP) SiGe HBT in IBM's 130nm SiGe bicmos8XP technology demonstrating peak f(T)/f(MAX) of 250/330GHz is reported for mm-wave and high performance RF/analog applications. The HBT has been developed as an optional device within the existing IBM 130nm SiGe bicmos8HP technology which includes a full suite of 130nm RFCMOS FETs, passives and mm-wave distributive passive devices. CML ring oscillators fabricated using HP HBTs in 8XP demonstrate 16% lower delay per stage than 8HP. A VCO design in 8XP has 40% lower phase noise at 36GHz compared to an identical design in 8HP. LNA and PA designs in 8XP show 6dB and 3dB higher gain respectively at 94GHz.
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