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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

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High-resistivity SiGe bicmos technology development

High-resistivity SiGe BiCMOS technology development

引用

bipolar/bicmos circuits and technology meeting

作者： Anthony Stamper Renata Camillo-Castillo Hanyi Ding James Dunn Mark Jaffe Vibhor Jain Alvin Joseph Ian McCallum-Cook Kim Newton Shyam Parthasarathy Robert Rassel Nicholas Schmidt Srikanth Srihari Randy Wolf Michael Zierak IBM Microelectronics Division VT U.S. IBM Microelectronics Division Bangalore India

IBM first qualified a 0.35μm generation 1000 Ω-cm high resistivity substrate (HiRES) SiGe bicmos technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf front-end-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Ω-cm, 1 st generation HiRES, and 2 nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed.

关键词： Switches Substrates Silicon germanium bicmos integrated circuits Radio frequency Resistance Silicon

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Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs

Investigation of HBT layout impact on fT doubler performance...

引用

bipolar/bicmos circuits and technology meeting

作者： Vibhor Jain B. J. Gross J. J. Pekarik J. W. Adkisson R. A. Camillo-Castillo Qizhi Liu P. B. Gray A. Vallett A. W. Divergilio B. K. Zetterlund D. L. Harame IBM VT USA

Peak f T of 660 GHz is reported for HBT f T doubler designs in IBM 90 nm SiGe bicmos technology 9HP. This high performance f T doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved transconductance and lower thermal resistance. The impact of HBT layout on the circuit performance and trade-off between thermal resistance and f T is also investigated. f T doubler circuit can be used as a single transistor in several circuit applications like A/D converters and broadband circuits where higher performance is desired.

关键词： Heterojunction bipolar transistors Silicon germanium Layout bicmos integrated circuits Thermal resistance

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High-speed, waveguide Ge PIN photodiodes for a photonic bicmos process

High-speed, waveguide Ge PIN photodiodes for a photonic BiCM...

引用

bipolar/bicmos circuits and technology meeting

作者： S. Lischke D. Knoll L. Zimmermann A. Scheit C. Mai A. Trusch K. Voigt M. Kroh R. Kurps P. Ostrovskyy Y. Yamamoto F. Korndörfer A. Peczek G. Winzer B. Tillack IHP Frankfurt Germany Institut für Hochfrequenz- und Halbleiter-Systemtechnologien Technical University Berlin Germany

Waveguide-coupled, Ge lateral pin photodiodes featuring bandwidths of more than 50GHz and 40Gbps functionality are presented. Non-doping implantations are applied that allow one to reach this performance even under the effect of thermal steps acting when the diodes are integrated in a high-performance bicmos process. The effect of these implants is to lower the minority-carrier lifetime(s) and in this way, to reduce bandwidth degradation by minority-carrier diffusion in non-depleted, weakly doped regions.

关键词： Bandwidth Annealing Implants PIN photodiodes bicmos integrated circuits Photonics Silicides

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A low phase noise signal generation system for Ka-Band P2P applications based on an injection-locked frequency tripler

A low phase noise signal generation system for Ka-Band P2P a...

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bipolar/bicmos circuits and technology meeting

作者： D. Cabrera J.B. Begueret Y. Deval O. Tesson P. Gamand O. Mazouffre T. Taris IMS Laboratory University of Bordeaux France NXP Semiconductors France

A signal generation system composed by a subharmonic VCO followed by an injection-locked frequency tripler (ILFT) is designed in a 0.25 μm bicmos SiGe:C technology. The ILFT implements a cascoded current-biased common emitter configuration that exploits the second harmonic of the VCO to enhance the efficiency in the generation of the injecting signal responsible for the ILFT locking. At 30.8GHz, the system achieves a phase noise of -112 dBc/Hz at 1 MHz offset. The total current consumption is 38 mA for a supply voltage of 2.5 V.

关键词： Phase noise Voltage-controlled oscillators bicmos integrated circuits Transistors Tuning Harmonic analysis

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A broad-band bicmos transmitter front-end for 27–36GHz phased array systems

A broad-band BiCMOS transmitter front-end for 27–36GHz phas...

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bipolar/bicmos circuits and technology meeting

作者： Yu Pei Ying Chen Domine M.W. Leenaerts NXP Semiconductors Eindhoven Netherlands

A 27-36 GHz wide-band phased array TX front-end is demonstrated in a 0.25um SiGe:C bicmos process. The TX front-end presents a saturation power more than 12.5dBm across 9GHz bandwidth. The front-end provides variable phase shift from 0°~360° with ~10° resolution, and the relative phase shift remains constant in the desired band. A 2-bit amplitude resolution is available for advanced beamforming algorithms. The wide-band PA can be applied in saturation mode and in linear mode due to its high linearity with an OIP3 over 21dBm.

关键词： Power amplifiers Arrays Linearity Radio frequency Power generation Transmitters Radar

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A low-power and ultra-compact W-band transmitter front-end in 90 nm SiGe bicmos technology

A low-power and ultra-compact W-band transmitter front-end i...

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bipolar/bicmos circuits and technology meeting

作者： Taiyun Chi Jong Seok Park Robert L. Schmid A. Cagri Ulusoy John D. Cressler Hua Wang School of Electrical and Computer Engineering Georgia Tech Atlanta GA USA

This paper presents a W-band direct-conversion transmitter front-end implemented in SiGe bicmos technology. The transmitter consists of an up-conversion mixer, a power amplifier (PA), and all the required on-chip passive matching networks. A differential cascode structure with capacitive neutralization is used in the PA design for improved gain and reverse isolation. W-band on-chip transformers are extensively utilized to realize low-loss and ultra-compact passive matching networks. This design strategy enables the whole transmitter core to fit within a 600 μm × 250 μm die area. The transmitter achieves +7.2 dBm peak output power and 18 dB conversion gain at 87 GHz, with 73.5 mW total power consumption. Modulation tests with QPSK and 16QAM signals (both at 50 MSym/s) were also performed. Average EVM values of 5.9% / 6.7% have been achieved at 7 dB output power back-off for QPSK/16QAM signals, respectively.

关键词： Transmitters Gain Mixers Silicon germanium Phase shift keying bicmos integrated circuits Power generation

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A 90nm SiGe bicmos technology for mm-wave and high-performance analog applications

A 90nm SiGe BiCMOS technology for mm-wave and high-performan...

引用

bipolar/bicmos circuits and technology meeting

作者： John J. Pekarik J. Adkisson P. Gray Q. Liu R. Camillo-Castillo M. Khater V. Jain B. Zetterlund A. DiVergilio X. Tian A. Vallett J. Ellis-Monaghan B. J. Gross P. Cheng V. Kaushal Z. He J. Lukaitis K. Newton M. Kerbaugh N. Cahoon L. Vera Y. Zhao J. R. Long A. Valdes-Garcia S. Reynolds W. Lee B. Sadhu D. Harame IBM Corporation VT IBM T. J. Watson Research Center Yorktown Heights NY IBM Delft University of Technology The Netherlands IBM T. J. Watson Research Center Yorktown Heights NY 105

We present the electrical characteristics of the first 90nm SiGe bicmos technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T and 2.5V BV CEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

关键词： Silicon germanium bicmos integrated circuits CMOS integrated circuits Heterojunction bipolar transistors Metals Junctions Radio frequency

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A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

A differential SiGe power amplifier using through-silicon-vi...

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bipolar/bicmos circuits and technology meeting

作者： Jerry Tsay Matthew Sapp Michael Phamvu Travis Hall Ryan Geries Yan Li Jerry Lopez Donald Y. C. Lie Dept. of Electrical & Computer Engineering Texas Tech University Lubbock TX USA RF Micro Devices (RFMD) Design Center Phoenix AZ USA Texas Tech University Lubbock TX US

In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe bicmos technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at P out = 25.6 / 25.4 / 25.7 dBm at supply voltages of V cc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at P out = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.

关键词： Silicon germanium Gain Through-silicon vias Gain measurement Long Term Evolution Radio frequency bicmos integrated circuits

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Device and circuit performance of SiGe HBTs in 130nm bicmos process with fT/fMAX of 250/330GHz

Device and circuit performance of SiGe HBTs in 130nm BiCMOS ...

引用

bipolar/bicmos circuits and technology meeting

作者： Vibhor Jain T. Kessler B. J. Gross J. J. Pekarik P. Candra P. B. Gray B. Sadhu A. Valdes-Garcia P. Cheng R. A. Camillo-Castillo K. Newton A. Natarajan S. K. Reynolds D. L. Harame IBM VT USA Now with Oregon State University Corvallis OR IBM T.J. Watson Research Center Yorktown Heights NY

A high performance (HP) SiGe HBT in IBM's 130nm SiGe bicmos8XP technology demonstrating peak f T /f MAX of 250/330GHz is reported for mm-wave and high performance RF/analog applications. The HBT has been developed as an optional device within the existing IBM 130nm SiGe bicmos8HP technology which includes a full suite of 130nm RFCMOS FETs, passives and mm-wave distributive passive devices. CML ring oscillators fabricated using HP HBTs in 8XP demonstrate 16% lower delay per stage than 8HP. A VCO design in 8XP has 40% lower phase noise at 36GHz compared to an identical design in 8HP. LNA and PA designs in 8XP show 6dB and 3dB higher gain respectively at 94GHz.

关键词： Heterojunction bipolar transistors Silicon germanium bicmos integrated circuits Gain Voltage-controlled oscillators Ring oscillators

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A power-efficient 4-element beamformer in 120-nm SiGe bicmos for 28-GHz cellular communications

A power-efficient 4-element beamformer in 120-nm SiGe BiCMOS...

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bipolar/bicmos circuits and technology meeting

作者： Anirban Sarkar Kevin Greene Brian Floyd Department of Electrical and Computer Engineering North Carolina State University Raleigh NC

A 4-element beamformer designed in 120-nm SiGe bicmos technology for 28-GHz mobile millimeter-wave broadband system is presented in this paper. Each element of the beamformer consists of a 4-bit active phase shifter and a two-stage Power Amplifier (PA). A two-stage PA design with a Class-C pre-driver and a 2nd-harmonic-tuned Class-AB driver stage is adopted for high gain and high efficiency at both peak and backed-off power levels. The active phase shifter employs in-phase/ quadrature phase current steering and digital control of transconductance (Gm). Measurement results show a 33-dB gain, 16.5-dBm saturated output power, 15.7-dBm oP 1dB , 27.5% peak PAE and 8.2% 7-dB back-off PAE at 27 GHz for a single element. The minimum (maximum) RMS gain and phase errors across the 27-29 GHz band were 0.5 dB (3 dB) and 1.5°(12°). The beamformer also includes a 1:4 power splitter and a serial interface for digital control and occupies a die area of 5.32mm 2 .

关键词： Gain Phase shifters Silicon germanium Harmonic analysis Millimeter wave technology Gain measurement Arrays

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