This paper presents a quad single-ended cable driver delivering 2400 mV swing on each channel when double-terminated with 75 Omega loads from a 3.3 V termination supply. Fabricated in 0.18 mu m SiGe bicmos it implemen...
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This paper presents a quad single-ended cable driver delivering 2400 mV swing on each channel when double-terminated with 75 Omega loads from a 3.3 V termination supply. Fabricated in 0.18 mu m SiGe bicmos it implements a switched current source to replace the conventional current steering emitter-coupled pair, with output swing controlled via replica biasing in place of a current mirror. All outputs meet industry-standard specifications for SD (270 Mb/s), HD (1.485 Gb/s), and 3G (2.97 Gb/s) data rates across the industrial temperature range, and the device is rated to withstand 4 kV human body model electrostatic discharge. The high swing can be applied directly to compensate for broadband implementation losses or configured to provide up to 9 dB of programmable preemphasis, extending the specified compliance point to the far end of 2 5 m(3G rate) or 40 m (HD rate) of Belden 1694A coaxial cable.
This paper presents HBT terahertz power detectors implemented in an experimental 0.25-mu m SiGe process technology with a peak f(T)/f(max) of 280/435 GHz. Based on the nonlinearity of the HBT base-emitter junction, th...
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This paper presents HBT terahertz power detectors implemented in an experimental 0.25-mu m SiGe process technology with a peak f(T)/f(max) of 280/435 GHz. Based on the nonlinearity of the HBT base-emitter junction, the detector operates as a square-law down converter, mixing terahertz frequencies directly to dc. Fifteen detectors have been arranged in a 3 x 5-pixel array with differential on-chip ring antennas. The array has been assembled with a hyper-hemispherical silicon lens. Referred to the collecting aperture of the lens, a maximum optical current responsivity R-I of 1 A/W and a minimum noise equivalent power (NEP) of about 50 pW/root Hz have been measured at 0.7 THz with a 125-kHz chopping frequency. The detectors have been characterized from 0.65 to 1 THz.
This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe bicmostechnology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four ...
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By any reasonable reckoning, SiGe HBT bicmostechnology has "come of age," as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia)...
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ISBN:
(纸本)9781467315531;9781467315524
By any reasonable reckoning, SiGe HBT bicmostechnology has "come of age," as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don't know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.
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