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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

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2009 IEEE bipolar/bicmos circuits and technology meeting, BCTM 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BC...

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2009 IEEE bipolar/bicmos circuits and technology meeting, BCTM 2009

ISBN: (纸本)9781424448968

The proceedings contain 47 papers. The topics discussed include: a 400 GHz fMAX fully self-aligned SiGe:C HBT architecture;advanced process modules and architectures for half-terahertz SiGe:C HBTs;experimental study of the SOA of SiGe HBTs on SOI;electrothermal behavior of highly-symmetric three-finger bipolar transistors;theoretical analysis and modeling of bipolar transistor operation under base current reversal;a two-channel, ultra-low-power, SiGe bicmos Receiver front-end for x-band phased array radars;large- and small-signal broadband 60 GHz power amplifier;a SiGe:C bicmos LNA for 60 GHz band applications;electron transport in extremely scaled SiGe HBTs;a novel superjunction collector design for improving breakdown voltage in high-speed SiGe HBTs;a novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance;and distributed De-embedding technique for accurate on-chip passive measurements based on open-short structures.

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10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (bipolar) and 120GHz 0.18µm bicmos technology

10 Bit and 12 Bit data conversion achievements at microwave ...

引用

bipolar/bicmos circuits and technology meeting

作者： Marc Wingender François Bore Nicolas Chantier Andrew Glascott-Jones Etienne Bouin Jean-Philippe Amblard e2v High Reliability Semiconductors Division Saint-Egreve France e2v Bievres ÃŽle-de-France FR

This paper describes design techniques for bipolar and bicmos analog circuits. Comparison on such performances as transconductance, speed, matching, noise of bipolar and CMOS transistors are reviewed and compared. Design achievements such as a single core 12 Bit 1.5GS/s Analog to Digital Converter (ADC) [1] and a single core 12 Bit 3GS/s Digital to Analog Converters (DAC) [2] based on a fully bipolar 200GHz SiGeC technology are introduced to illustrate the advantages and drawbacks of a fully bipolar technology for high speed data converters. A Quad 10 Bit 5GS/s ADC based on 4 interleaved ADC Core designed with a 120 GHz 0.18um bicmos technology is also presented, to illustrate the advantages brought by the combination of bipolar and CMOS technologies.

关键词： Noise Transistors Clocks bicmos integrated circuits CMOS integrated circuits Calibration Resistors

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A transient triggered bipolar clamp for electrostatic discharge protection in SiGe bicmos technologies

A transient triggered bipolar clamp for electrostatic discha...

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bipolar/bicmos circuits and technology meeting

作者： Srivatsan Parthasarathy Javier A. Salcedo Jean-Jacques Hajjar Analog Devices Wilmington MA USA

An active ESD supply clamp for mixed voltage RF applications developed in advanced SiGe bicmos process is introduced. The clamp is designed using a three-stage architecture consisting of transient-detection, timing and beta-multiplication. The proposed design ensures the clamp has very low leakage even when circuits operate at supply voltages that are equal to or beyond the breakdown voltage of the core SiGe bipolar devices. The clamp's turn-on characteristics spans the full duration of the actual ESD events making it fully capable to effectively protect the sensitive devices in the core circuit.

关键词： Electrostatic discharges Clamps Transient analysis bicmos integrated circuits Transistors Layout Integrated circuit modeling

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An Impulse Radio UWB Transmitter for Communication and Precise Localization

An Impulse Radio UWB Transmitter for Communication and Preci...

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IEEE 13th Topical meeting on Silicon Monolithic Integrated circuits in RF Systems (SiRF)

作者： Martynenko, Denys Fischer, Gunter Klymenko, Oleksiy IHP Frankfurt Oder Frankfurt Germany

ISBN: (纸本)9781467315531;9781467315524

This paper describes a monolithic integrated transmitter intended for impulse radio (IR) Ultra-wide band (UWB) indoor communication and indoor localization. The transmitter operates in the higher UWB band centered at 7.25 GHz and generates impulses with bandwidth of 2.08 GHz. Consequently, the transmitter utilizes for communication and ranging complete UWB band assigned for Europe. The average pulse repetition frequency of 56.64 MHz and a 3-bits pulse position modulation (8-PPM) provides data rates up to 169.92 MBit/sec. Additionally, the driver amplifier with a fast switchable current bias is introduced into the transmitter for power efficient operation. The switch-on time of the bias is equal to 8ns. Besides the communication capability, an advanced time-of-arrival measurement extension is implemented in the transmitter. It runs with the clock of 3.625 GHz and allows the distance measurements with an accuracy of 275 picoseconds (translates to ranging accuracy of approximately 8.3 cm).

关键词： bipolar/bicmos process technology ultra-wideband UWB transmitter indoor localization

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Comparative study of HBT ageing in a complementary SiGe:C bicmos technology

Comparative study of HBT ageing in a complementary SiGe:C Bi...

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bipolar/bicmos circuits and technology meeting

作者： G. G. Fischer J. Molina B. Tillack IHP Frankfurt Germany

Both npn- and pnp-SiGe HBT types of a complementary bicmos technology were consistently studied under mixed-mode and reverse stress conditions to check for any ageing mismatches. These were found to be more pronounced under forward than under reverse stress. Long-term stress-tests revealed a not yet described base current degradation “catching-up” under low current stress conditions. The resulting ageing parameters were put together into an ageing function for incorporation into HBT compact models.

关键词： Heterojunction bipolar transistors Heterojunctions Reliability Degradation Stress

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A high-resistivity SiGe bicmos technology for WiFi RF front-end-IC solutions

A high-resistivity SiGe BiCMOS technology for WiFi RF front-...

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bipolar/bicmos circuits and technology meeting

作者： Alvin Joseph Jeff Gambino Robert M. Rassel Eric Johnson Hanyi Ding Shyam Parthasarthy Venkata Vanakuru Santosh Sharma Mark Jaffe Derrick Liu Michael Zierak Renata Camillo-Castillo Anthony Stamper Jim Dunn IBM Microelectronics Division Vermont

We present for the first time a novel high resistivity bulk SiGe bicmos technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for power amplifiers (PAs), a SiGe HBT low-noise amplifier (LNA), and isolated nFET RF switch device. Process elements include trench isolation for low-loss passives and reduced parasitic coupling, and a lower-resistivity region for the FETs to minimize changes to the circuit library.

关键词： Substrates Silicon germanium Radio frequency Switches Conductivity bicmos integrated circuits Heterojunction bipolar transistors

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A 220–245 GHz switched beam Butler Matrix in 0.13 µm SiGe bicmos technology

A 220–245 GHz switched beam Butler Matrix in 0.13 µm SiGe ...

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bipolar/bicmos circuits and technology meeting

作者： Mohamed Elkhouly Mao Yanfei Chafik Meliani Frank Ellinger J. Christoph Scheytt Department of Electrical Engineering National Taiwan University of Science and Technology Taipei Taiwan

This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe bicmos technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm 2 .

关键词： Switches Butler matrices Silicon germanium Heterojunction bipolar transistors Impedance

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A 4GS/s 8bit ADC fabricated in 0.35µm SiGe bicmos technology

A 4GS/s 8bit ADC fabricated in 0.35µm SiGe BiCMOS technolog...

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bipolar/bicmos circuits and technology meeting

作者： Danyu Wu Fan Jiang Lei Zhou Jin Wu Yinkun Huang Zhi Jin Xinyu Liu Microwave device and integrated circuits department Institute of Microelectronics of Chinese Academy of Sciences Beijing China

In this paper, a low cost 4GS/s 8bit Folding-and-Interpolation (F&I) ADC has been demonstrated. To avoid threshold-mismatch and delay-mismatch between coarse and fine quantizer, a novel coarse quantizer with analog pre-processing circuits are proposed. According to the measurement result, the proposed coarse quantizer has successfully eliminated the glitch code. The ADC is capable of sampling analog input frequencies up to 1.5GHz with greater than 7.0 effective number of bits (ENOB) performance. The ADC has a die size of 3.8×3.8 mm 2 and consumes 4.1W of power.

关键词： Silicon germanium bicmos integrated circuits CMOS integrated circuits Interpolation CMOS technology Synchronization Feeds

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A 12 bit 1.6 GS/s bicmos 2×2 hierarchical time-interleaved pipeline ADC

A 12 bit 1.6 GS/s BiCMOS 2×2 hierarchical time-interleaved ...

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bipolar/bicmos circuits and technology meeting

作者： Manar El-Chammas Xiaopeng Li Shigenobu Kimura Kenneth Maclean Jake Hu Mark Weaver Matthew Gindlesperger Scott Kaylor Robert Payne Charles Sestok William Bright Texas Instruments Inc. Dallas TX USA

A 12 bit 1.6 GS/s pipeline ADC realized in a 0.18 μm complementary bicmos SiGe process is presented. The ADC consists of a four-way time-interleaved hierarchical structure and a master-slave T/H to improve the dynamic performance of the individual sub-ADCs and to reduce both the complexity of the required interleaving background calibration algorithms and the error rate. It achieves an SFDR of 79 dBc at low frequency inputs and 66 dBc at Nyquist, and has an error rate of less than 10 -9 .

关键词： Timing Clocks Calibration Pipelines Linearity Master-slave bicmos integrated circuits

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Impact of BEOL stress on bicmos9MW HBTs

Impact of BEOL stress on BiCMOS9MW HBTs

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bipolar/bicmos circuits and technology meeting

作者： E. Canderle P. Chevalier G. Avenier N. Derrier D. Céli C. Gaquière STMicroelectronics Crolles France 2 IEMN USTL Villeneuve d'Ascq France

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics bicmos9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies f T and f MAX respectively.

关键词： Stress Integrated circuits Metals Photonic band gap Silicon germanium Equations Strain

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