检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是281-290 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

A Q-band SiGe power amplifier with 17.5 dBm saturated output...

引用

bipolar/bicmos circuits and technology meeting

作者： Wei Tai L. Richard Carley David S. Ricketts Carnegie Mellon University Pittsburgh PA USA

A Q-band class-B power amplifier implemented in a 0.13 μm SiGe bicmos process is presented. At 45 GHz, the PA achieves a 17.5 dBm saturated output power, a 16.6 dB peak power gain, and a 26% peak power-added efficiency (PAE) with a 2.5V supply. A 2-stage, single-ended, inductor matched topology is used. To support envelope modulation transceiver topologies, the output common-emitter stage is optimized for high efficiency under varying supply voltage and maintains a peak PAE of greater than 21% throughout the supply voltage range of 1.3V to 2.5V. The PA occupies a total die area of 0.2 mm 2 .

关键词： Power amplifiers Silicon germanium Gain Power generation Inductors Topology bicmos integrated circuits

来源：评论

学校读者我要写书评

暂无评论

A low power 9.75/10.6GHz down-converter IC in SiGe:C bicmos for Ku-band satellite LNBs

A low power 9.75/10.6GHz down-converter IC in SiGe:C BiCMOS ...

引用

bipolar/bicmos circuits and technology meeting

作者： P. Philippe L. Praamsma R. Breunisse E. van der Heijden F. Meng S. Bardy F. Moreau S. Wane E. Thomas NXP Semiconductors Caen France NXP Semiconductors Nijmegen Netherlands NXP Semiconductors Eindhoven Netherlands

A low cost / low power bicmos Ku-band down-converter IC with integrated LO-PLL for satellite TV is presented. The down-converter section shows 43dB conversion gain, with 6.5dB noise figure and output IP3 of 16dBm. The LO-PLL section achieves state-of-art integrated phase noise performance of 1° rms. The down-converter operates from the 5V supply commonly available in satellite TV outdoor units. Its current consumption of 52mA is to our knowledge the lowest ever reported for a similar function.

关键词： Radio frequency Voltage-controlled oscillators Phase locked loops bicmos integrated circuits Satellite broadcasting Frequency conversion Noise figure

来源：评论

学校读者我要写书评

暂无评论

Extended high voltage HBTs in a high-performance bicmos process

Extended high voltage HBTs in a high-performance BiCMOS proc...

引用

bipolar/bicmos circuits and technology meeting

作者： H. Mertens P.H.C. Magnée J.J.T.M Donkers E. Gridelet P. Huiskamp D.B.M. Klaassen T. Vanhoucke NXP Semiconductors Research Leuven Belgium NXP Semiconductors Nijmegen Nijmegen Netherlands NXP Semiconductors Research Eindhoven Netherlands

An approach to integrate extended high voltage (EHV) npn SiGe heterojunction bipolar transitors (HBTs) in a high-performance bicmos process is presented. The EHV HBTs are based on a dedicated high-energy implanted phosphorus-doped subcollector. The epitaxially buried arsenic-doped subcollector of the conventional low-voltage (LV) and high-voltage (HV) HBTs, as well as the base-emitter configuration, which is shared between all three HBT types (i.e. LV, HV, and EHV), remains unchanged. The EHV devices that were fabricated are characterized by BV CE0 = 3.5 - 7.7 V, BV CB0 = 14 - 24 V, and peak-f T = 54 - 22 GHz. These figures of merit are tunable across the specified ranges by the subcollector implantation energy and dose. The integration of EHV HBTs in NXP's high-performance QUBiC4Xi process enables highly integrated transmitter and receiver ICs for microwave and millimeter-wave applications.

关键词： Heterojunction bipolar transistors bicmos integrated circuits Resistance Performance evaluation Tuning Silicon carbide Silicon germanium

来源：评论

学校读者我要写书评

暂无评论

A highly-efficient bicmos cascode Class-E power amplifier using both envelope-tracking and transistor resizing for LTE-like applications

A highly-efficient BiCMOS cascode Class-E power amplifier us...

引用

bipolar/bicmos circuits and technology meeting

作者： Yan Li Ruili Wu Jerry Lopez Donald Y.C. Lie Department of Electrical and Computer Engineering Texas Technology University Lubbock TX USA

This paper presents the design of a SiGe differential cascode power amplifier (PA) to perform the envelope-tracking (ET) along with transistor resizing for efficiency enhancement for the 16QAM LTE. A new parallel-circuit class-E PA model is developed to analyze and design the cascode PA. The analytic results are compared with SPICE simulation and measurement data to provide circuit design insights. Measurement shows the ET-based PA system reaches an overall power-added-efficiency (PAE) of 38% at its 1 dB compression point (P 1dB ) of 22 dBm for its high power mode. Additionally, at the low power mode, some of the transistor cells can be disabled by the integrated MOSFET switches, and the overall PAE is improved by 4-5% at ≥4 dB back-off from its P 1dB . This ET-based cascode PA satisfies the LTE 16QAM linearity specs without needing predistortions.

关键词： Transistors Silicon germanium Power amplifiers Modulation CMOS integrated circuits bicmos integrated circuits Linearity

来源：评论

学校读者我要写书评

暂无评论

A +18dBm, 79–87.5GHz bandwidth power amplifier in 0.13µm SiGe-bicmos

A +18dBm, 79–87.5GHz bandwidth power amplifier in 0.13µm S...

引用

bipolar/bicmos circuits and technology meeting

作者： Yi Zhao John R. Long Marco Spirito Atef B. Akhnoukh Electronics Research Laboratory/DIMES Delft University of Technology Delft Netherlands

A three-stage, 77/79GHz transformer-coupled differential power amplifier is implemented in 130nm SiGe-bicmos. Common-base stages maximize output voltage swing and power, while a cascode first stage enhances gain for greater power-added efficiency (PAE). A frequency-scalable, parasitic-compensated balun combines power from the output stages to the 50Ω load with 2 area on-chip. The measured peak small-signal gain is 27dB at 83GHz, and -3dB bandwidth is >;8GHz. Maximum output power and peak-PAE are 18dBm and 9%, respectively, at 84GHz. The 0.23mm 2 active area PA consumes 395mW from a 2.5V supply.

关键词： Power amplifiers Power generation Impedance matching Windings Frequency measurement Power measurement Circuit faults

来源：评论

学校读者我要写书评

暂无评论

High speed channel resistive sensor interface with RHBD in 0.5 µm SiGe bicmos for UWT from −180°C to 120°C

High speed channel resistive sensor interface with RHBD in 0...

引用

bipolar/bicmos circuits and technology meeting

作者： Xueyang Geng Desheng Ma Zhenqi Chen Fa Dai John D. Cressler Jeremy A. Yaeger Mohammad M. Mojarradi Alan Mantooth Benjamin J. Blalock Richard W. Berger Auburn University USA Georgia Institute of Technology USA Jet Propulsion Laboratory USA University of Arkansas USA University of Tennessee Knoxville USA BAE Systems Avionics USA

High speed channel (HSC) resistive sensor interface is an analog sampling channel designed for measuring the resistance variations with data rate at 5 kHz. It measures the external resistance variation and digitizes the received signal using a 12-bit analog to digital converter (ADC). The HSC includes a Wheatstone bridge with programmable configurations, a high voltage cap stack sampler, a 6 th order Butterworth switching capacitor filter, and a continuous time variable gain amplifier (VGA). An 8-bit voltage mode calibration digital to analog converter (DAC) is used to calibrate the common mode voltage level. An 8-bit current mode stimulus DAC is used to provide the current source to the Wheatstone bridge through a high voltage current mirror. With radiation hardening by design (RHBD), the HSC is implemented in a 0.5 μm SiGe bicmos technology for applications in aerospace environment under extreme temperature, radiation, pressure and vibration.

关键词： Bridge circuits Temperature measurement Capacitors Silicon germanium Active filters Resistors Mirrors

来源：评论

学校读者我要写书评

暂无评论

Introduction to the 2006 bipolar/bicmos circuits and technology meeting

引用

IEEE JOURNAL OF SOLID-STATE circuits 2007年第9期42卷 1819-1820页

作者： Veenstra, Hugo Philips Res Labs NL-5656 AE Eindhoven Netherlands

No abstract available

关键词： bicmos integrated circuits Power amplifiers Voltage-controlled oscillators Power generation Protection Optical amplifiers Silicon germanium Germanium silicon alloys MIM capacitors Paper technology

来源：评论

学校读者我要写书评

暂无评论

2008 IEEE bipolar/bicmos circuits and technology meeting BCTM

引用

IEEE Microwave Magazine 2008年第4期9卷 117-117页

Describes the above-named upcoming conference event. May include topics to be covered or calls for papers.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Proceedings of the 2007 IEEE bipolar/bicmos circuits and technology meeting

Proceedings of the 2007 IEEE BIPOLAR/BiCMOS Circuits and Tec...

引用

2007 IEEE bipolar/bicmos circuits and technology meeting, BCTM

ISBN: (纸本)9781424410194

The proceedings contain 56 papers. The topics discussed include: a zero-second-IF SiGe bicmos satellite radio tuner using a single PLL for both and IF LO generation and a replica ring-VCO calibrated IF Filter;high speed junction diodes in bicmos technologies;new electrothermal modeling tools for automotive powers circuits design optimization;analysis of electrothermal effects in bipolar current mirrors;electrothermal effects in bipolar differential pairs;physics-based scalable modeling of GaAs HBTs;high accuracy temperature bipolar modeling for demanding bandgap application;new method for oxide capacitance extraction;integration of a 5.5V BVceo SiGe HBT within a 200 GHz SiGe bicmos process flow;impact of layout and process on RF and analog performances of 3D Damascene MIM capacitors;and electrically programmable fuses for analog and mixed signal applications in silicon germanium bicmos technologies.

关键词： bicmos technology

来源：评论

学校读者我要写书评

暂无评论

TCAD Assisted Reflection on Parameter Extraction for Compact Modeling

TCAD Assisted Reflection on Parameter Extraction for Compact...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Steigerwald, Jake Humphries, Paul Analog Devices Inc Wilmington MA 01887 USA

ISBN: (纸本)9781424485796

Base resistance extraction for small geometry, self aligned bipolar transistors has become more problematic as the other resistances and capacitances effecting the input impedance have become more significant and distributed. Following an introduction to Analog Devices' XFCB3 process, this paper will review a combination of measured results, TCAD simulations and Spice analysis of hybrid-pi equivalent circuits which were used to better understand the base resistance extraction issues.

关键词： Silicon bipolar/bicmos process technology bipolar modeling and simulation device physics

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 25 26 27 28 29 30 31 32 33 34 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：