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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是291-300 订阅

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Collector Region Design and Optimization in Horizontal Current bipolar Transistor (HCBT)

Collector Region Design and Optimization in Horizontal Curre...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Suligoj, T. Koricic, M. Mochizuki, H. Morita, S. Shinomura, K. Imai, H. Univ Zagreb Dept Elect HR-10000 Zagreb Croatia Asahi Kasei Microdevices Co Miyazaki 882 Japan

ISBN: (纸本)9781424485796

Three different types of the n-collector region of Horizontal Current bipolar Transistor (HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic transistor. This implies a maximum BVCEO and an optimum f(T)BV(CEO) product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces R-C and increases f(T) comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.

关键词： bicmos integrated circuits bipolar transistors HF radio communication Horizontal Current bipolar Transistor

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A SiGe:C bicmos LNA for 94GHz band applications

A SiGe:C BiCMOS LNA for 94GHz band applications

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Severino, R. R. Taris, T. Deval, Y. Belot, D. Begueret, J. B. Univ Bordeaux IIMS Lab F-33405 Talence France ST Microelect Site Minatec F-38016 Grenoble France

ISBN: (纸本)9781424485796

A new low noise amplifier (LNA) dedicated to 94GHz band has been implemented in a 130nm bicmos technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08dB maximum peak of power gain at 94.7GHz and a 1dB compression point at -14.9dBm of input power. The noise figure is 8.6dB and the power consumption is 13mW.

关键词： millimeter-waves (mm-Waves) low noise amplifier (LNA) bipolar/bicmos integrated circuits 94GHz imaging

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Application of On-Wafer Calibration Techniques for Advanced High-Speed bicmos technology

Application of On-Wafer Calibration Techniques for Advanced ...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Rumiantsev, A. Sakalas, P. Pourchon, F. Chevalier, P. Derrier, N. Schroter, M. Cascade Microtech Dresden GmbH Suss Str 1 D-01561 Sacka Germany Tech Univ Dresden CEDIC D-01062 Dresden Germany State Sci Res Inst Ctr Phys Sci & Technol FRL Vilnius Lithuania STMicroelect F-38926 Crolles France Univ Calif San Diego ECE Dept La Jolla CA USA

ISBN: (纸本)9781424485796

On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced bicmos process. We discuss the design of customized calibration standards addressing specifics of the silicon bicmos process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT's.

关键词： Silicon-germanium HBT bicmos process technology calibration S-parameters RF circuits

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A 25 GHz Wide-tuning VCO RFIC Implemented in 0.13 um SiGe bicmos technology

A 25 GHz Wide-tuning VCO RFIC Implemented in 0.13 um SiGe Bi...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Kakani, Vasanth Jin, Yuehai Dai, Fa Foster Auburn Univ Dept Elect & Comp Engn Auburn AL 36849 USA

ISBN: (纸本)9781424485796

This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on-chip transmission lines and hyperabrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) bicmos technology. The VCO oscillation frequency is around 25GHz, targeting at the ultra wideband (UWB) and short range radar applications. The VCO phase noise was measured around -82.5dVc/Hz at 500 KHz frequency offset. It has a wide tuning range from 23.8GHz to 26.3GHz. The core of VCO circuit consumes 10mA current from a 2.2V power supply and occupies 0.56x0.205mm(2) area.

关键词： SiGe HBT bicmos voltage controlled oscillator (VCO) phase noise

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Antennas on Silicon for millimeterwave applications - Status and Trends

Antennas on Silicon for millimeterwave applications - Status...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Person, Ch. Lab STICC Telecom Bretagne CS 83818 F-29238 Brest 03 France

ISBN: (纸本)9781424485796

We discuss in this paper about the recent development of Antennas on Chip (AoC), especially in the context of emerging applications in the millimetre wave frequency range, like WLAN @ 60Ghz, automotive radars (76-81GHz) as well as imaging system (94Ghz),... Limitations due to the specific environment of such antennas integrated on Silicon are described and analysed first. Then, we focus on the different approaches which can be investigated for enhancing the performances of such highly integrated radiating modules, especially dedicated to future SiP (System in Package) and SoC (System on Chip) chips for RF microelectronic.

关键词： Antenna on Silicon CMOS and bicmos technology antenna modeling electromagnetic modeling System on Chip System in Package RF circuits millimeter wave applications

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An Investigation of Electro-thermal Instabilities in 150 GHz SiGe HBTs Fabricated on SOI

An Investigation of Electro-thermal Instabilities in 150 GHz...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Chakraborty, Partha S. Horst, Stephen J. Moen, Kurt A. Bellini, Marco Cressler, John D. Georgia Inst Technol Sch Elect & Comp Engn Atlanta GA 30332 USA

ISBN: (纸本)9781424485796

We investigate, for the first time, the electro-thermal stability of 150 GHz SiGe HBTs that were optimized for bulk-Si and then fabricated on SOI substrates to enable a direct comparison. AC, DC and pulsed measurements are used to characterize the devices and study the onset of electro-thermal instabilities. Implications of electro-thermal feedback induced instabilities resulting from self-heating are discussed, along with consequent electrical biasing constraints imposed on the device. Figures-of-merit are proposed as effective tools for comparing devices with strong self-heating effects. TCAD is used to predict the implications for performance scaling and bicmos technology development for SiGe on SOI platforms.

关键词： Silicon-on-insulator (SOI) Silicon-germanium bicmos Heterojunction bipolar transistors Electro-thermal effects Stability criteria

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A High-Linearity Inverse-Mode SiGe bicmos RF Switch

A High-Linearity Inverse-Mode SiGe BiCMOS RF Switch

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Madan, Anuj Cressler, John Joseph, Alvin Georgia Inst Technol Sch Elect & Comp Engn 777 Atlantic Dr NW Atlanta GA 30332 USA IBM Corp Div Microelect Essex Jct VT USA

ISBN: (纸本)9781424485796

The utilization of inverse-mode operation of the SiGe HBT in a single-pole, single-throw RF switch designed for high-linearity and high-power handling applications is investigated for the first time. By swapping the base-emitter junction with base-collector junction for switching, record linearity performance is obtained for SiGe bicmos switches at X-band frequencies, while maintaining comparable insertion loss. An IIP3 of 35 dBm and P1dB of 20 dBm is obtained while consuming 29.7 mW of dc power in the ON state. The inverse-mode switch did not show any degradation up to an RF power level of 30 dBm. The reliability mechanisms in SiGe bicmos RF switches is understood to be junction damage in the series-diode switching element.

关键词： SiGe bicmos process technology RF switch IIP3 P1dB X-band RF stress

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A Fully Integrated Q-band Bidirectional Transceiver in 0.12-μm SiGe bicmos technology

A Fully Integrated <i>Q</i>-band Bidirectional Transceiver i...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Kim, Joohwa Buckwalter, James F. Univ Calif San Diego La Jolla CA 92093 USA

ISBN: (纸本)9781424485796

A fully integrated Q-band (40 similar to 45 GHz) bidirectional transceiver is demonstrated in a 0.12-mu m SiGe bicmos technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB bandwidth of 4 GHz. The OP1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is -5 dBm at 43 GHz. The chip consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm x 0.8 mm including pads. To the author's knowledge, this work represents the first switchless millimeter-wave bidirectional transceiver in a CMOS or bicmos processes.

关键词： Noise figure

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Layout and Spacer Optimization for High-Frequency Low-Noise Performance in HBT's

Layout and Spacer Optimization for High-Frequency Low-Noise ...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Vanhoucke, T. Donkers, J. J. T. M. Hurkx, G. A. M. Magnee, P. H. C. van Dalen, R. Egbers, J. H. Klaassen, D. B. M. NXP TSMC Res Ctr Kapeldreef 75 B-3001 Louvain Belgium NXP Semicond Nijmegen NL-6534 AE Nijmegen Netherlands NXP TSMC Res Ctr NL-5656 AE Eindhoven Netherlands

ISBN: (纸本)9781424485796

In this work we study improvements of the high-frequency noise performance of HBT devices by means of layout and spacer optimization. Using an equivalent circuit, we identify the dominant noise sources and demonstrate that the reduction of the base-resistance induced thermal noise by means of dotted emitters in combination with lowering the edge contribution of the base-emitter capacitance (e. g. by emitter-base spacer optimization) translates into better noise performance.

关键词： Silicon bipolar/bicmos process technology bipolar modeling and simulation Noise

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Millimeter-wave Beamforming circuits in SiGe bicmos

Millimeter-wave Beamforming Circuits in SiGe BiCMOS

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Elkhouly, Mohamed Choi, Chang-Soon Glisic, Srdjan Scheytt, Christoph Ellinger, Frank IHP Microelect Technol Pk D-15236 Frankfurt Germany Tech Univ Dresden D-01069 Dresden Germany

ISBN: (纸本)9781424485796

Integrated millimeter-wave 2 bit and 3 bit phase shifters and 4 channel beamforming network are presented in this paper. The 2 bit phase shifter exhibits 4 degrees RMS phase error and a RMS gain error < 1 dB. In the 55-67 GHz range, the 3 bit phase shifter shows RMS phase error < 7 degrees and a RMS gain error < 1 dB. The 4 channel beamforming network consists of four 2 bit RF phase shifter and a fully differential passive power distribution network. Between the 4 channels, the beamforming network exhibits less than 4 degrees and 0.6 dB RMS phase and amplitude mismatch, respectively. The beamforming chip and the phase shifters are fabricated in SiGe bicmos technology. The 2 bit and 3 bit phase shifters draws 7 mA and 10 mA respectively from a 3.3 V supply. The circuits are well suited for highly integrated beamforming millimeter-wave transceivers.

关键词： RF phase shifter mm-wave phased array beamforming

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