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检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

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Burst-mode Optical Receiver ICs for Broadband Access Networks

Burst-mode Optical Receiver ICs for Broadband Access Network...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Nakamura, M. Nishihara, S. Ito, T. Kurosaki, T. Nogawa, M. Ohtomo, Y. NTT Corp NTT Photon Labs Atsugi Kanagawa 2430198 Japan NTT Corp NTT Microsyst Integrat Labs Atsugi Kanagawa 2430198 Japan

ISBN: (纸本)9781424485796

This paper provides an overview of burst-mode optical receiver ICs for broadband access networks. A passive optical network (PON) system is a cost-effective broadband access system whose use has been spreading worldwide. A key device in such a system is an optical receiver IC with a quick response and high sensitivity that realizes high efficiency in data transmission. This paper also reports burst-mode optical receiver ICs fabricated using 0.25-mu m SiGe bicmos technologies for a 10G-EPON system, which is a promising access network for a next generation PON system. It features fast gain and offset controls for burst-mode operation. The results show that SiGe bicmos can provide high performance and cost-effective receiver ICs for 10G-class PON systems.

关键词： bicmos analog integrated circuits Optical fiber communication Optical subscriber loops

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Fully Differential, 40 Gb/s Regulated Cascode Transimpedance Amplifier in 0.13 μm SiGe bicmos technology

Fully Differential, 40 Gb/s Regulated Cascode Transimpedance...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Amid, S. Bashiri Plett, C. Schvan, P. Carleton Univ Dept Elect Ottawa ON K1S 5B6 Canada Ciena Ottawa ON Canada

ISBN: (纸本)9781424485796

A broadband differential Transimpedance amplifier (TIA) has been designed and measured in 0.13 mu m bicmos technology. Regulated Cascode (RGC) configuration has been employed to reduce the effect of the large parasitic capacitor of the PIN diode. The added C-PD, representing PIN diode parasitic capacitor, is 300fF. The TIA has 53.6 dB Omega differential transimpedance gain and 28GHz measured bandwidth. The total measured integrated input referred noise is 6.11 mu A(rms). The TIA chip including the TIA and 3 stages of buffer consumes 110mW power from a 3V power supply. The active chip area is 330 mu mx210 mu m and the total chip area including the pads is 1050 mu mx530 mu m.

关键词： bicmos process technology Regulated Cascode (RGC) Transimpedance Amplifier Optical communication network

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A Comparison of npn vs. pnp SiGe HBT Oscillator Phase Noise Performance in a Complementary SiGe Platform

A Comparison of <i>npn</i> vs. <i>pnp</i> SiGe HBT Oscillato...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Horst, Stephen J. Chakraborty, Partha Saha, Prabir Cressler, John D. Gustat, Hans Heinemann, Bernd Fischer, Gerhard G. Knoll, Dieter Tillack, Bernd Georgia Tech Sch ECE 777 Atlantic Dr NW Atlanta GA 30332 USA IHP D-15236 Frankfurt Germany

ISBN: (纸本)9781424485796

A comparison of cross-coupled oscillator performance is presented for a high-speed, complementary SiGe (C-SiGe = npn + pnp) bicmos platform with matched npn and pnp performance. Results show with all factors held constant, the pnp-only VCO design holds an advantage in white FM phase noise over its npn counterpart at constant current;a counter-intuitive outcome if one only considers absolute base resistance. The reduced noise in the pnp-only VCO is shown to stem from the device's decreased beta compared to the npn, which reduces conversion of the thermal noise associated with the base resistance to the output node. Understanding this phase noise reduction effect has potential to influence oscillator device selection in any given technology family.

关键词： bicmos integrated circuits Ge-Si alloys SiGe SiGe HBT oscillator phase noise performance base resistance complementary SiGe platform cross-coupled oscillator performance heterojunction bipolar transistors high-speed complementary SiGe bicmos platform oscillator device selection phase noise phase noise reduction pnp-only VCO design semiconductor materials thermal noise white FM phase noise

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Frequency- and Amplitude-Tunable X-to-Ku Band SiGe Ring Oscillators for Multiband BIST Applications

Frequency- and Amplitude-Tunable X-to-Ku Band SiGe Ring Osci...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Shankar, Subramaniam Horst, Stephen Cressler, John D. Georgia Tech Sch Elect & Comp Engn Atlanta GA 30332 USA

ISBN: (纸本)9781424485796

An 8-17 GHz SiGe ring oscillator covering the X- and Ku-bands for built-in-self-test of multiband system-on-chip solutions is demonstrated. The oscillator features highly linear frequency control over the bandwidth, with 72% tuning range in a small form factor of 0.652 mm(2). To the author's knowledge, this is the widest tuning range/smallest form factor combination achieved by a ring oscillator that spans both X and Ku bands. A second ring oscillator with band selectivity and output power control is also presented, covering the 9-11 GHz and 17-21 GHz bands. This second oscillator features an ultra-small form factor of only 0.036 mm(2). Both oscillator designs are based on a 3.3 V supply and were implemented in a commercially-available 180 nm SiGe bicmos platform.

关键词： bicmos integrated circuits bicmos platform Ge-Si alloys SOC SiGe amplitude-tunable X-to-Ku band ring oscillators band selectivity built-in self test built-in-self-test frequency 17 GHz to 21 GHz frequency 8 GHz to 17 GHz frequency-tunable X-to-Ku band ring oscillators microwave integrated circuits microwave oscillators multiband BIST applications multiband system-on-chip solutions power control size 180 nm system-on-chip voltage 3.3 V

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Hyperabrupt-Junction Varactor for mmWave SiGe:C bicmos, Enabling 77GHz VCO/TX with 13-15GHz Tuning Range

Hyperabrupt-Junction Varactor for mmWave SiGe:C BiCMOS, Enab...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Trivedi, V. P. Kirchgessner, J. John, J. P. Welch, P. Morgan, D. Stewart, S. Peterman, R. Hammock, D. Nivison, J. Hartin, O. Shams, S. Lim, I-S. Li, H. Trotta, S. Salle, D. Huang, W. M. Freescale Semicond Inc 2100 E Elliot Rd Tempe AZ 85284 USA Freescale Halbleiter Deutschland GmbH D-81829 Munich Germany Freescale Semicond SAS F-31023 Toulouse France

ISBN: (纸本)9781424485796

A millimeter-wave hyperabrupt-junction varactor ( HAVAR) enabling 77GHz VCO/TX with 13-15GHz tuning range and better than -70dBc/Hz phase noise at 100kHz offset has been integrated in SiGe:C bicmos for automotive radar products. The HAVAR predominantly uses existing processes for low-cost integration and minimal process complexity. Optimization of TR-Q thru HAVAR width allows TR up to 2.7 and Q(min) up to 10.

关键词： varactor hyperabrupt junction millimeter wave technology SiGe bicmos VCO

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Fully-Integrated 1-Dimensional RF Coupled-Oscillator Network for Phase-Shifterless Phased Array Systems

Fully-Integrated 1-Dimensional RF Coupled-Oscillator Network...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Lopez, J. Lie, D. Y. C. Meadow, B. K. Cothern, J. Texas Tech Univ Dept Elect & Comp Engn Lubbock TX 79409 USA SPAWAR Syst Ctr San Diego CA 92152 USA

ISBN: (纸本)9781424485796

A fully-monolithic 3-element array of coupled voltage-controlled-oscillator (VCO) network was fabricated in a 0.18 mu m SiGe bicmos process for potential use in a Rx/Tx modules. A digitally controlled on-chip passive network was designed and used for controlling the coupling strength across the array VCO units. The operational bandwidth of this core network resides in the S-Band from 1.2GHz to 1.7GHz. The integrated VCO network can be injection-locked via an external RF source to achieve excellent phase noise performance. These characteristics make this coupled-VCO network a very attractive choice for possible use in phased-array radar applications. The chip's total power consumption is 30mW (12mA at 2.5V).

关键词： SiGe/bicmos LC VCO phased array coupled VCO phase-shifterless phased array injection locking non-linear dynamics

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The Future of Medical Electronics

The Future of Medical Electronics

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Vasanth, Karthik Texas Instruments Inc Dallas TX 75243 USA

ISBN: (纸本)9781424485796

Medical electronics have a very important role to play in improving the quality of health care in the form of diagnosis and therapy of illness. In addition it has an equally important role in the prevention of sickness. The success of such devices depends on the ability to measure and interpret the wide variety of signals linked to the underlying physical condition. For example, in ultrasound systems, the electronics needs to be able to analyze signal strength varying over 100dB in magnitude. This paper will cover some of the range of process and design challenges to meet these requirements. Future trends and directions are also discussed.

关键词： Silicon bipolar/bicmos process technology ultrasound implantable devices analog or digital circuits RF circuits

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A High Performance, Low Complexity 14V Complementary bicmos Process Built on Bulk Silicon

A High Performance, Low Complexity 14V Complementary BiCMOS ...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Thibeault, Todd Preisler, Edward Zheng, Jie Lao, Lynn Hurwitz, Paul Racanelli, Marco Jazz Semicond Inc Newport Beach CA 92660 USA

ISBN: (纸本)9781424485796

This paper details a new 14V Complementary bicmos ( Cbicmos) addition to the TowerJazz SBC35 family of bicmos technologies. The SBC35 family previously supported BV(ceo) values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics.

关键词： Complementary bicmos technology silicon VPNP SiGe NPN DSL driver application

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A 91 to 110-GHz Tapered Constructive Wave Power Amplifier in a 0.12μm SiGe bicmos Process

A 91 to 110-GHz Tapered Constructive Wave Power Amplifier in...

引用

bipolar/bicmos circuits and technology meeting (BCTM)

作者： Kalantari, Nader Buckwalter, James F. Univ Calif San Diego La Jolla CA 92093 USA

ISBN: (纸本)9781424485796

A W-band, tapered constructive wave power amplifier (TCWPA) has been designed and fabricated in a 0.12 mu m SiGe bicmos technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, O P(1dB) is 4.9 dBm. At 97 GHz, P(sat) is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm(2).

关键词： Power amplifiers

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Integrated Si-LDMOS Transistors for 11 GHz X-Band Power Amplifier Applications

Integrated Si-LDMOS Transistors for 11 GHz X-Band Power Ampl...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Sorge, R. Fischer, A. Mai, A. Schley, P. Schmidt, J. Wipf, Ch. Pliquett, R. Barth, R. IHP D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781424485796

The integration of RF NLDMOS transistors into a 0.13 mu m CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC bicmos platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

关键词： bicmos integrated circuits MOSFET power amplifier power amplifier semiconductor device fabrication

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