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bipolar/bicmos circuits and technology meeting

The following topics are dealt with:wireless transceivers and building blocks; terahertz transistors; SiGe complementary bicmos; data converters and oscillators ; large-signal bipolar modeling; power devices; DBS tuner and power amplifiers; data transceivers; thermal effects, modeling, and reliability; radar and wireless sensors; bipolar modeling and characterization; SiGe millimeter wave and high-voltage technologies ; millimeter wave designs ; ESD and reliability; and passive components.

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A 0.13 μm SiGe bicmos technology Featuring f_T/f_max of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS Technology Featuring f<i><sub>T</sub>...

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bipolar/bicmos circuits and technology meeting

作者： Ruecker, Holger Heinemann, Bernd Winkler, Wolfgang Barth, R. Borngraeber, J. Drews, J. Fischer, Gerhard G. Fox, Alexander Grabolla, Thomas Haak, U. Knoll, Dieter Korndoerfer, Falk Mai, Andreas Marschmeyer, Steffen Schley, P. Schmidt, D. Schmidt, J. Schubert, Markus Andreas Schulz, K. Tillack, Bernd Wolansky, D. Yamamoto, Yuji IHP D-15236 Frankfurt Oder Germany Silicon Radar D-15236 Frankfurt Oder Germany

A 0.13 mu m SiGe bicmos technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f(T) of 240 GHz, maximum oscillation frequencies f(max) of 330 GHz, and breakdown voltages BVCEO of 1.7 V along with high-voltage HBTs (f(T) = 50 GHz, f(max) = 130 GHz, BVCEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.

关键词： Heterojunction bipolar transistors millimeter wave bipolar integrated circuits millimeter wave devices silicon alloys silicon bipolar/bicmos process technology

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Design and Optimization of Silicon JFET in 180nm RF/bicmos technology

Design and Optimization of Silicon JFET in 180nm RF/BiCMOS T...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Shi, Yun Rassel, Robert M. Phelps, Richard A. Rainey, BethAnn Dunn, Jim Harame, David IBM Microelect Essex Jct VT 05452 USA

ISBN: (纸本)9781424485796

in this paper, we discuss a method to extrapolate intrinsic and extrinsic R-on components for a JFET. The results provide the guideline to lower R-on, hence to achieve competitive "R-on vs. pinch off (V-off)" benchmark. The optimization impacts on channel length scaling and process variation are discussed. Besides, an improved RESURF condition is achieved using one of the experimental conditions. The optimized JFET demonstrates the 50% lowered R-on, low V-off of -2.75V, and high BVdss of 11 V.

关键词： JFET R-on V-off avalanche breakdown

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A Low-Power 60GHz Receiver Front-End with a Variable-Gain LNA in SiGe bicmos technology

A Low-Power 60GHz Receiver Front-End with a Variable-Gain LN...

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bipolar/bicmos circuits and technology meeting (BCTM)

作者： Sun, Yaoming Scheytt, Christoph J. IHP Circuit Design Dept Frankfurt Oder Germany

ISBN: (纸本)9781424485796

This paper presents a fully differential low-power 60 GHz Front-End, which comprises a variable gain differential LNA and a low-power Gilbert mixer. The differential LNA features a current folded architecture to save power. Its gain can be tuned from zero to 17.3 dB. It is 15.3 dB for fully differential operation at 10 mW DC power. The measured 3 dB bandwidth extends from 57 to 64 GHz. Both input and output return losses are measured to be below -10 dB in the same frequency range. The mixer core is a Gilbert cell, which draws 1.44 mA from 3.3 V DC supply. Its voltage conversion gain is optimized to be 10 dB. This front-end is best suited for 60 GHz beam steering system where multiple front-ends are required.

关键词： 60 GHz LNA mixer low power receiver front-end Silicon bipolar/bicmos

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An X-Band Transformer-Coupled Varactor-Less Quadrature Current-Controlled Oscillator in 0.18 μm SiGe bicmos technology

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IEEE JOURNAL OF SOLID-STATE circuits 2010年第9期45卷 1669-1677页

作者： Geng, Xueyang Dai, Fa Foster Auburn Univ Dept Elect & Comp Engn Auburn AL 36849 USA

This paper presents a transformer-coupled varactorless quadrature current-controlled oscillator (QCCO) RFIC covering the entire X-Band from 8.7 GHz to 13.8 GHz. The QCCO incorporates a transformer-coupled technique that achieves frequency tuning by varying the bias currents in the primary and secondary windings. Fabricated in a 0.18 mu m SiGe bicmos technology, the prototype QCCO achieves a 45.3% wide tuning range. With two stacked octagonal transformers the QCCO core circuit occupies 0.4x0.5 mm(2) chip area and draws 8-18 mA current under a 1.8 V power supply. The measured phase noise for 11.02 GHz quadrature outputs is about -110 dBc/Hz at 10 MHz offset. The QCCO achieves a phase noise, power and area efficiency figure-of-merit of -191 dBc/Hz.

关键词： Current-controlled oscillator frequency synthesis QCCO quadrature oscillator SiGe transformer-coupled oscillator varactor-less VCO

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An X-Band Transformer-Coupled Varactor-Less Quadrature Current-Controlled Oscillator in 0.18 μm SiGe bicmos technology

An X-Band Transformer-Coupled Varactor-Less Quadrature Curre...

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bipolar/bicmos circuits and technology meeting

作者： Geng, Xueyang Dai, Fa Foster Auburn Univ Dept Elect & Comp Engn Auburn AL 36849 USA

关键词： Current-controlled oscillator frequency synthesis QCCO quadrature oscillator SiGe transformer-coupled oscillator varactor-less VCO

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Millimeter-wave beamforming circuits in SiGe bicmos

Millimeter-wave beamforming circuits in SiGe BiCMOS

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bipolar/bicmos circuits and technology meeting

作者： Mohamed Elkhouly Chang-Soon Choi Srdjan Glisic Christoph Scheytt Frank Ellinger Im Technologiepark Germany Dresden University of Technology Dresden Germany

Integrated millimeter-wave 2 bit and 3 bit phase shifters and 4 channel beamforming network are presented in this paper. The 2 bit phase shifter exhibits 4° RMS phase error and a RMS gain error

关键词： Phase shifters Radio frequency Array signal processing Phase measurement Semiconductor device measurement Silicon germanium bicmos integrated circuits

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A high performance, low complexity 14V Complementary bicmos process built on bulk silicon

A high performance, low complexity 14V Complementary BiCMOS ...

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bipolar/bicmos circuits and technology meeting

作者： Todd Thibeault Edward Preisler Jie Zheng Lynn Lao Paul Hurwitz Marco Racanelli Jazz Semiconductor Inc. Newport Beach CA USA

This paper details a new 14V Complementary bicmos (Cbicmos) addition to the TowerJazz SBC35 family of bicmos technologies. The SBC35 family previously supported BV ceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics.

关键词： Implants Silicon germanium Optimization Performance evaluation bicmos integrated circuits Silicon CMOS integrated circuits

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Si integrated photoreceivers

Si integrated photoreceivers

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bipolar/bicmos circuits and technology meeting

作者： Woo-Young Choi Myung-Jae Lee Jin-Sung Youn Department of Electrical and Electronic Engineering Yonsei University Seoul South Korea

This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and bicmos. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P + /N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.

关键词： Photodetectors CMOS integrated circuits Silicon CMOS technology bicmos integrated circuits Junctions Optical receivers

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Integrated Si-LDMOS transistors for 11 GHz X-Band power amplifier applications

Integrated Si-LDMOS transistors for 11 GHz X-Band power ampl...

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bipolar/bicmos circuits and technology meeting

作者： R. Sorge A. Fischer A. Mai P. Schley J. Schmidt Ch. Wipf R. Pliquett R. Barth IHP Frankfurt Germany

The integration of RF NLDMOS transistors into a 0.13 μm CMOS process for operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB gain and 0.25 W/mm power density and 22% power added efficiency at 1 dB output power compression is presented. The self aligned NLDMOS was modularly integrated into IHP's 130 nm SiGeC bicmos platform targeting 1 W X-Band power amplifiers for radar and satellite communication applications.

关键词： Logic gates Transistors Gain CMOS integrated circuits Power amplifiers bicmos integrated circuits Radio frequency

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