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A high-linearity inverse-mode SiGe bicmos RF switch

A high-linearity inverse-mode SiGe BiCMOS RF switch

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bipolar/bicmos circuits and technology meeting

作者： Anuj Madan John Cressler Alvin Joseph School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA IBM Microelectronics Division Essex Junction VT USA

The utilization of inverse-mode operation of the SiGe HBT in a single-pole, single-throw RF switch designed for high-linearity and high-power handling applications is investigated for the first time. By swapping the base-emitter junction with base-collector junction for switching, record linearity performance is obtained for SiGe bicmos switches at X-band frequencies, while maintaining comparable insertion loss. An IIP3 of 35 dBm and P1dB of 20 dBm is obtained while consuming 29.7 mW of dc power in the ON state. The inverse-mode switch did not show any degradation up to an RF power level of 30 dBm. The reliability mechanisms in SiGe bicmos RF switches is understood to be junction damage in the series-diode switching element.

关键词： Switches Radio frequency Silicon germanium Junctions Insertion loss bicmos integrated circuits Switching circuits

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A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12µm SiGe bicmos process

A 91 to 110-GHz tapered constructive wave power amplifier in...

引用

bipolar/bicmos circuits and technology meeting

作者： Nader Kalantari James F. Buckwalter University of California San Diego La Jolla CA USA

A W-band, tapered constructive wave power amplifier (TCWPA) has been designed and fabricated in a 0.12 μm SiGe bicmos technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, OP 1dB is 4.9 dBm. At 97 GHz, P sat is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm 2 .

关键词： Linearity Gain Feedback circuits Silicon germanium Power transmission lines Resistors Power generation

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Application of on-wafer calibration techniques for advanced high-speed bicmos technology

Application of on-wafer calibration techniques for advanced ...

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bipolar/bicmos circuits and technology meeting

作者： A. Rumiantsev P. Sakalas F. Pourchon P. Chevalier N. Derrier M. Schroter CEDIC Dresden University of Technology Dresden Germany STMicroelectronics Crolles France ECE Department University of California San Diego CA USA

On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced bicmos process. We discuss the design of customized calibration standards addressing specifics of the silicon bicmos process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT's.

关键词： Calibration Impedance Impedance measurement Silicon Transistors Frequency measurement Microwave measurements

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A SiGe:C bicmos LNA for 94GHz band applications

A SiGe:C BiCMOS LNA for 94GHz band applications

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bipolar/bicmos circuits and technology meeting

作者： R. R. Severino T. Taris Y. Deval D. Belot J. B. Begueret IMS Laboratory University of Bordeaux 1 Talence France STMicroelectronics Grenoble France

A new low noise amplifier (LNA) dedicated to 94 GHz band has been implemented in a 130 nm bicmos technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08 dB maximum peak of power gain at 94.7 GHz and a 1 dB compression point at -14.9 dBm of input power. The noise figure is 8.6 dB and the power consumption is 13 mW.

关键词： Transmission line measurements bicmos integrated circuits Transistors Integrated circuit modeling Layout Impedance matching Millimeter wave technology

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A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe bicmos technology

A fully integrated Q-band bidirectional transceiver in 0.12-...

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bipolar/bicmos circuits and technology meeting

作者： Joohwa Kim James F. Buckwalter University of California San Diego La Jolla CA USA

A fully integrated Q-band (40~45 GHz) bidirectional transceiver is demonstrated in a 0.12-μm SiGe bicmos technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB bandwidth of 4 GHz. The OP1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is -5 dBm at 43 GHz. The chip consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm×0.8 mm including pads. To the author's knowledge, this work represents the first switchless millimeter-wave bidirectional transceiver in a CMOS or bicmos processes.

关键词： Gain Transceivers Noise Radio frequency Impedance matching bicmos integrated circuits Loss measurement

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A 25 GHz wide-tuning VCO RFIC implemented in 0.13 um SiGe bicmos technology

A 25 GHz wide-tuning VCO RFIC implemented in 0.13 um SiGe Bi...

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bipolar/bicmos circuits and technology meeting

作者： Vasanth Kakani Yuehai Jin Fa Foster Dai Department of Electrical & Computer Engineering Aubum University Auburn AL USA

This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on-chip transmission lines and hyper-abrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) bicmos technology. The VCO oscillation frequency is around 25GHz, targeting at the ultra wideband (UWB) and short range radar applications. The VCO phase noise was measured around -82.5dBc/Hz at 500 KHz frequency offset. It has a wide tuning range from 23.8GHz to 26.3GHz. The core of VCO circuit consumes 10mA current from a 2.2V power supply and occupies 0.56×0.205mm 2 area.

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Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 µm SiGe bicmos technology

Fully differential, 40 Gb/s regulated cascode transimpedance...

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bipolar/bicmos circuits and technology meeting

作者： S. Bashiri Amid C. Plett P. Schvan Department of Electronics Carleton University Ottawa ONT Canada Ciena Nortel Networks Ottawa ONT Canada

A broadband differential Transimpedance amplifier (TIA) has been designed and measured in 0.13μm bicmos technology. Regulated Cascode (RGC) configuration has been employed to reduce the effect of the large parasitic capacitor of the PIN diode. The added C PD , representing PIN diode parasitic capacitor, is 300fF. The TIA has 53.6 dBO differential transimpedance gain and 28GHz measured bandwidth. The total measured integrated input referred noise is 6.11μA rms . The TIA chip including the TIA and 3 stages of buffer consumes 110mW power from a 3V power supply. The active chip area is 330μm×210μm and the total chip area including the pads is 1050μm×530μm.

关键词： Noise Bandwidth Gain Current measurement bicmos integrated circuits CMOS integrated circuits Optical fiber amplifiers

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An investigation of electro-thermal instabilities in 150 GHz SiGe HBTs fabricated on SOI

An investigation of electro-thermal instabilities in 150 GHz...

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bipolar/bicmos circuits and technology meeting

作者： Partha S. Chakraborty Stephen J. Horst Kurt A. Moen Marco Bellini John D. Cressler School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

We investigate, for the first time, the electro-thermal stability of 150 GHz SiGe HBTs that were optimized for bulk-Si and then fabricated on SOI substrates to enable a direct comparison. AC, DC and pulsed measurements are used to characterize the devices and study the onset of electro-thermal instabilities. Implications of electro-thermal feedback induced instabilities resulting from self-heating are discussed, along with consequent electrical biasing constraints imposed on the device. Figures-of-merit are proposed as effective tools for comparing devices with strong self-heating effects. TCAD is used to predict the implications for performance scaling and bicmos technology development for SiGe on SOI platforms.

关键词： Silicon germanium Temperature measurement Performance evaluation Current measurement Force measurement bicmos integrated circuits

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Design and optimization of silicon JFET in 180nm RF/bicmos technology

Design and optimization of silicon JFET in 180nm RF/BiCMOS t...

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bipolar/bicmos circuits and technology meeting

作者： Yun Shi Robert M. Rassel Richard A. Phelps BethAnn Rainey Jim Dunn David Harame IBM Microelectronics Essex Junction VT USA

In this paper, we discuss a method to extrapolate intrinsic and extrinsic R on components for a JFET. The results provide the guideline to lower R on , hence to achieve competitive “R on vs. pinch off (V off )” benchmark. The optimization impacts on channel length scaling and process variation are discussed. Besides, an improved RESURF condition is achieved using one of the experimental conditions. The optimized JFET demonstrates the 50% lowered R on , low V off of -2.75V, and high BVd ss of 11V.

关键词： JFETs Doping Logic gates Optimization Junctions Radio frequency Electric breakdown

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Low-power 60GHz receiver front-end with a variable-gain LNA in SiGe bicmos technology

Low-power 60GHz receiver front-end with a variable-gain LNA ...

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bipolar/bicmos circuits and technology meeting

作者： Yaoming Sun Christoph J. Scheytt Circuit Design Department IHP Frankfurt Germany

This paper presents a fully differential low-power 60 GHz Front-End, which comprises a variable gain differential LNA and a low-power Gilbert mixer. The differential LNA features a current folded architecture to save power. Its gain can be tuned from zero to 17.3 dB. It is 15.3 dB for fully differential operation at 10 mW DC power. The measured 3 dB bandwidth extends from 57 to 64 GHz. Both input and output return losses are measured to be below -10 dB in the same frequency range. The mixer core is a Gilbert cell, which draws 1.44 mA from 3.3 V DC supply. Its voltage conversion gain is optimized to be 10 dB. This front-end is best suited for 60 GHz beam steering system where multiple front-ends are required.

关键词： Gain Mixers Receivers Inductors Gain measurement Frequency measurement bicmos integrated circuits

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