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bipolar/bicmos circuits and technology meeting

作者： J. Lopez D.Y.C. Lie B.K. Meadow J. Cothern Department of Electrical and Computer Engineering Texas Tech University Lubbock TX USA SPAWAR Systems Center San Diego CA USA

A fully-monolithic 3-element array of coupled voltage-controlled-oscillator (VCO) network was fabricated in a 0.18μm SiGe bicmos process for potential use in a Rx/Tx modules. A digitally controlled on-chip passive network was designed and used for controlling the coupling strength across the array VCO units. The operational bandwidth of this core network resides in the S-Band from 1.2GHz to 1.7GHz. The integrated VCO network can be injection-locked via an external RF source to achieve excellent phase noise performance. These characteristics make this coupled-VCO network a very attractive choice for possible use in phased-array radar applications. The chip's total power consumption is 30mW (12mA at 2.5V).

关键词： Voltage-controlled oscillators Arrays Couplings Tuning Phase noise Radio frequency bicmos integrated circuits

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Design optimization of adjustable triggering dual-polarity ESD protection structures

Design optimization of adjustable triggering dual-polarity E...

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bipolar/bicmos circuits and technology meeting

作者： Jian Liu L. Lin X. Wang Z. Shi S. Fan H. Tang A. Wang Y. Cheng B. Zhao Department of Electrical Engineering University of California Riverside CA USA Peking University China Freescale Semiconductor Inc. USA

We report design optimization of new low-triggering dual-directional SCR (LTdSCR) ESD protection structures in bicmos. Design optimization techniques to adjust ESD triggering voltage (V t1 ), as well as its impacts on ESD holding voltage (V h ) and ESD protection capability, are discussed. Measurements show very low and adjustable V t1 , low leakage (I leak ), low noise figure (NF), low ESD-induced parasitic capacitance (C ESD ) and fast ESD triggering time (t 1 ). High ESD protection to Si ratio of ESDV~7.49V/μm 2 is achieved.

关键词： Electrostatic discharge Thyristors Testing Design optimization Noise measurement bicmos integrated circuits

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Hyperabrupt-junction varactor for mmWave SiGe:C bicmos, enabling 77GHz VCO/TX with 13-15GHz tuning range

Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enab...

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bipolar/bicmos circuits and technology meeting

作者： V. P. Trivedi J. Kirchgessner J. P. John P. Welch D. Morgan S. Stewart R. Peterman D. Hammock J. Nivison O. Hartin S. Shams I.-S. Lim H. Li S. Trotta D. Salle W. M. Huang Freescale Semiconductor Inc. Tempe AZ USA Freescale Halbleiter Deutschland GmbH Munich Germany Freescale Semiconductor Inc. Toulouse France

A millimeter-wave hyperabrupt-junction varactor (HAVAR) enabling 77 GHz VCO/TX with 13-15 GHz tuning range and better than -70 dBc/Hz phase noise at 100 kHz offset has been integrated in SiGe:C bicmos for automotive radar products. The HAVAR predominantly uses existing processes for low-cost integration and minimal process complexity. Optimization of TR-Q thru HAVAR width allows TR up to 2.7 and Q min up to 10.

关键词： Varactors Junctions bicmos integrated circuits Voltage-controlled oscillators Implants Tuning Silicon germanium

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SiGe HBT amplifiers with high image rejection for quasi-millimeter-wave frequency range

SiGe HBT amplifiers with high image rejection for quasi-mill...

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Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Toru Masuda Nobuhiro Shiramizu Takahiro Nakamura Katsuyoshi Washio Central Research Laboratory Hitach Limited Kokubunji Tokyo Japan

ISBN: (纸本)9781424454563;9781424454587

24-GHz band amplifiers with a high image-rejection function have been designed and characterized using a 0.18-¿m SiGe bicmos technology. To achieve a higher image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region, an amplifier configuration with a notch-filter type feedback circuit has been proposed. A low noise amplifier (LNA) and a driver amplifier (DA) were developed to eliminate the image-frequency signal for super-heterodyne transceivers. The LNA obtained a 16.5-dB gain, 5.9-dB NF at 24 GHz and a more than 40-dB IRR at a frequency of 18.5 GHz. The power consumption was 8.4 mW with a 1.4-V power supply. The DA also achieved a 6.5-dB gain at 24 GHz and a 40-dB IRR at 16 GHz. Moreover, large-signal characteristics such as an OP1dB of +1.4 dBm and an OIP3 of +15 dBm were obtained for a power consumption of 15 mW with a 1.5-V power supply. The large-signal capability of the IRR was also experimentally confirmed.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Frequency Low-noise amplifiers Energy consumption Power supplies bicmos integrated circuits Feedback circuits Circuit noise

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2007 IEEE bipolar/bicmos circuits and technology meeting (BCTM) in Boston, September 30 to October 2, Dr. Tak H. Ning to Deliver Keynote Address

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IEEE Solid-State circuits Society Newsletter 2007年第3期12卷 33-33页

作者： Yih-Feng Chyan BCTM General Chair yfchyan@***

Dr. Tak H. Ning to Deliver Keynote Address BCTM 2007 will feature keynote speaker Tak H. Ning on the "Historical Development of Devices Based on bipolar Phenomena." The conference will offer two full days of technical papers, including a session on emerging technologies, and a short course on bipolar IC design.

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Introduction to the special issue on the IEEE bipolar/bicmos circuits and technology meeting

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IEEE JOURNAL OF SOLID-STATE circuits 2006年第9期41卷 2125-2126页

作者： Friedman, Daniel J. IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA

No abstract available

关键词： Special issues and sections bicmos integrated circuits Switches Driver circuits Power amplifiers Capacitors Sampling methods Marine technology Clocks Switching circuits

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0.13 μm SiGe bicmos technology Fully Dedicated to mm-Wave Applications

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IEEE JOURNAL OF SOLID-STATE circuits 2009年第9期44卷 2312-2321页

作者： Avenier, Gregory Diop, Malick Chevalier, Pascal Troillard, Germaine Loubet, Nicolas Bouvier, Julien Depoyan, Linda Derrier, Nicolas Buczko, Michel Leyris, Cedric Boret, Samuel Montusclat, Sebastien Margain, Alain Pruvost, Sebastien Nicolson, Sean T. Yau, Kenneth H. K. Revil, Nathalie Gloria, Daniel Dutartre, Didier Voinigescu, Sorin P. Chantre, Alain STMicroelectronics F-38926 Crolles France Univ Toronto Edward S Rogers Sr Dept Elect & Comp Engn Toronto ON M5S 3G4 Canada

This paper presents a complete 0.13 mu m SiGe bicmos technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f(T)/f(MAX)) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/mu m(2) high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.

关键词： bicmos integrated circuits technology heterojunction bipolar transistor (HBT) integrated circuit fabrication millimeter wave technology Silicon Germanium (SiGe)

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bicmos High-Performance ICs: From DC to mm-Wave

BiCMOS High-Performance ICs: From DC to mm-Wave

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bipolar/bicmos circuits and technology meeting

作者： Smolders, A. B. Gul, H. v.d. Heijden, E. Gamand, P. Geurts, M. NXP Semicond NL-6534 AE Nijmegen Netherlands

ISBN: (纸本)9781424448951

Progress with silicon and silicon germanium (SiGe) based bicmos technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art bicmos technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

关键词： Silicon bipolar/bicmos process technology RF circuits microwave circuits mm-wave circuits

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A Two-Channel, Ultra-Low-Power, SiGe bicmos Receiver Front-end for X-Band Phased Array Radars

A Two-Channel, Ultra-Low-Power, SiGe BiCMOS Receiver Front-e...

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bipolar/bicmos circuits and technology meeting

作者： Thrivikraman, Tushar K. Kuo, Wei-Min Lance Cressler, John D. Georgia Inst Technol Sch Elect & Comp Engn Atlanta GA 30332 USA

ISBN: (纸本)9781424448951

We present an ultra-low-power SiGe bicmos receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of de power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2 degrees, respectively. This design demonstrates possible applications of SiGe ROT technology for use in ultra-low-power radar systems.

关键词： SiGe bicmos integrated circuits Phased array radar Microwave receivers LNA phase-shifter

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Advanced Process Modules and Architectures for Half-Terahertz SiGe:C HBTs

Advanced Process Modules and Architectures for Half-Terahert...

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bipolar/bicmos circuits and technology meeting

作者： Decoutere, S. Van Huylenbroeck, S. Heinemann, B. Fox, A. Chevalier, P. Chantre, A. Meister, T. F. Aufinger, K. Schroeter, M. IMEC VZW Kapeldreef 75 B-3001 Louvain Belgium IHP Frankfurt Germany STMicroelect Crolles France Infineon Technol AG Munich Germany TUD Dresden Germany

ISBN: (纸本)9781424448951

The European project DOTFIVE Ill addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe bicmos towards 500 GHz F-max and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.

关键词： Silicon-Germanium bipolar transistors bicmos process technology Microwave technology Millimeter-wave technology

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