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A 40 GS/s 4 bit SiGe bicmos Flash ADC

A 40 GS/s 4 bit SiGe BiCMOS Flash ADC

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Du, Xuan-Quang Groezing, Markus Buck, Matthias Berroth, Manfred Univ Stuttgart Inst Elect & Opt Commun Engn INT Stuttgart Germany

ISBN: (纸本)9781509063833

This paper presents the design and experimental test of a 40 GS/s 4 bit single-core flash ADC in a 0.13 mu m SiGe bicmos technology. The ADC exploits a traveling-wave concept and integrates a new low-complexity Pseudo-XOR gray encoder that makes use of folded-cascode differential logic. Up to a sampling rate of 39.04 GS/s the ADC provides a measured ENOB of more than 3 bits and a SFDR of more than 24.8 dBc within the frequency band from DC to 20 GHz. At 40.32 GS/s the frequency band for a minimum effective resolution of 3 bits is 12 GHz and at 42.24 GS/s it is about 5.3 GHz.

关键词： Flash analog-to-digital converter (ADC) SiGe bicmos Pseudo-XOR gray encoder data scrambling field programmable gate array (FPGA) mm-wave data conversion

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0.13-μm SiGe bicmos technology with More-than-Moore Modules

0.13-μm SiGe BiCMOS Technology with More-than-Moore Modules

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Kaynak, M. Wietstruck, M. Goeritz, A. Wipf, S. Tolunay Inac, M. Cetindogan, B. Wipf, C. Kaynak, C. Baristiran Woehrmann, M. Voges, S. Braun, T. IHP Technol Pk 25 D-15236 Frankfurt Oder Germany Sabanci Univ TR-34956 Istanbul Turkey Berlin Tech Univ HFT4 Einsteinufer 25 D-10587 Berlin Germany Fraunhofer Inst Reliabil & Microintegrat Berlin Berlin Germany

ISBN: (纸本)9781509063833

This paper presents three different technology modules, integrated into a 0.13-mu m SiGe bicmos process;namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The bicmos process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.

关键词： bicmos mm-wave More-than-Moore RF-MEMS microfluidic heterogeneous integration

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A 28 GHz Transceiver Chip for 5G Beamforming Data Links in SiGe bicmos

A 28 GHz Transceiver Chip for 5G Beamforming Data Links in S...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Kibaroglu, Kerim Sayginer, Mustafa Rebeiz, Gabriel M. Univ Calif San Diego La Jolla CA 92093 USA

ISBN: (纸本)9781509063833

This paper presents a 28-32 GHz transceiver chip architecture in SiGe bicmos to meet the requirements of 5G phased-array communication links. An asymmetric design is employed for the transmit and receive paths to deliver an output P1dB of 8 dBm in TX mode and to achieve an input P1dB of 0 dBm in RX mode. The chip can operate with an external LO at 10-16 GHz and 20-28 GHz with the use of an on-chip doubler option. All switches on RF, LO and IF paths are implemented using SiGe HBTs for low loss and wideband operation. An on-chip elliptic filter is implemented in the TX path to reject the upconverted image and LO leakage to meet spectral mask requirements. The chip was tested in the TX mode with an 802.11ad MCS-10 waveform and achieves 3.9% EVM at 3 Gbps physical rate.

关键词： 5G communication link 28 GHz upconverter downconverter active mixer transmit receive phased array beamforming SiGe bicmos MIMO

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Fully-differential, DC-coupled, Self-biased, Monolithically-integrated Optical Receiver in 0.25 μm Photonic bicmos technology for Multi-channel Fiber Links

Fully-differential, DC-coupled, Self-biased, Monolithically-...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Gudyriev, Sergiy Scheytt, J. Christoph Yan, Lei Meuer, Christian Zimmermann, Lars Univ Paderborn Paderborn Germany Sicoya Berlin Germany IHP Microelect Frankfurt Germany

ISBN: (纸本)9781509063833

A fully-differential receiver structure for fiber links is presented, in which the photodiode (PD) is DC-coupled to the transimpedance amplifier (TIA) and biased through the feedback resistors. The biasing voltage is defined by the internal structure of the input stage. Different options are suggested that allow to adjust PD biasing. Multiple architecture variants are proposed, that were implemented in 0.25 mu m SiGe bicmos technology. Initial measurement results are reported, proving the feasibility of the concept. A 25Gbps hybrid receiver designed to comply with a specific standard is also presented, featuring large horizontal eye opening of 800mV, OMA of -15dBm at BER of 10(-6) and power dissipation of 330mW from a single 3.3V power supply.

关键词： optical receiver transimpedance amplifier silicon photonics optical communications

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A 100 Gbit/s 2V_pp Power Multiplexer in SiGe bicmos technology for Directly Driving a Monolithically Integrated Plasmonic MZM in a Silicon Photonics Transmitter

A 100 Gbit/s 2V<sub>pp</sub> Power Multiplexer in SiGe BiCMO...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Uhl, Christopher Hettrich, Horst Moeller, Michael Saarland Univ Chair Elect & Circuits Saarbrucken Germany MICRAM Microelect GmbH Bochum Germany

ISBN: (纸本)9781509063833

An 8:1 multiplexer with a power output stage (PMUX) in SiGe bicmos technology for directly driving a plasmonic Mach-Zehnder modulator (MZM) with a 2V(pp) differential voltage swing at a data rate of 100 Gbit/s is presented. The PMUX is intended to be monolithically integrated with an ultra-short MZM on a single chip in a novel silicon photonic process. Through this integration, the bandwidth and output voltage swing could be improved compared to an external MZM load that requires far end termination. Furthermore, the direct driving by the PMUX eliminates the traditional driver amplifier, whereby power can be saved and the signal quality can be improved. Electrical measurements of the MUX show clear eye openings at 100 Gbit/s up to a 2.0V(pp) differential output voltage swing at an external 50 Omega oscilloscope load. The inherent high-speed capability of the PMUX is demonstrated at the speed limit of the available measurement equipment at 140 Gbit/s, where the PMUX still achieves 1.2V(pp) differential voltage swing, which is a record for SiGe bipolar technology.

关键词： Plasmons Clocks Modulation Voltage measurement Photonics Switching circuits Silicon germanium

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60 GHz Concurrent Dual-Polarization RX Front-End in SiGe with Antenna-IC Co-Integration

60 GHz Concurrent Dual-Polarization RX Front-End in SiGe wit...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Liu, Yao Natarajan, Arun Oregon State Univ Sch EECS Corvallis OR 97331 USA

ISBN: (纸本)9781509063833

Achieving a wideband, efficient, scalable and low-cost interface between IC and antennas is critical for mm-wave transceivers in silicon. This paper presents an antenna-IC co-integration approach to achieve dual-polarization transmission and reception using on-chip dual-pol feeds that aperture-couple through a slot in the on-chip ground to a patch antenna on the back side of the IC. The proposed wafer-scale compatible approach is demonstrated with a 60GHz prototype that includes a dual-pol 60 GHz receiver frontend (RXFE) implemented in the TowerJazz SBC18H3 SiGe technology. The RXFE includes a cross-pol cancellation path (with variable gain and phase shift) to cancel cross-polarization leakage signal to enable concurrent dual-pol operation. The antenna co-integration approach achieves similar to 50% and 2.7 dBi simulated efficiency and gain, with measured dual-pol reception and similar to 30 dB cross-pol leakage cancellation. Extensive ground-plane reuse leads to the 60GHz dual-pol RXFE and antenna feed and slot structures occupying 1.8mm similar to 1.8mm of die area.

关键词： On-chip antenna Aperture-coupled antenna co-integration mm-wave CMOS bicmos transceivers LCP dual-polarization 60 GHz receiver

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A Multimode 5-6 GHz SiGe bicmos PA Design Powers Emerging Wireless LAN Radio Standards

A Multimode 5-6 GHz SiGe BiCMOS PA Design Powers Emerging Wi...

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IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Huang, Chun-Wen Paul Christainsen, Kenny Lam, Lui Chen, Andrew Doherty, Mark McPartlin, Mike Vaillancourt, Bill Skyworks Solut Inc Andover MA 01810 USA

ISBN: (纸本)9781509063833

A multimode 5-6 GHz SiGe bicmos PA IC that powers the emerging Wireless LAN applications is presented. The design can be realized in a 1.35 x 0.7 active area as a standalone power amplifier (PA) or the transmit (Tx) chain of a Front-end IC. The design features multiple modes with low DEVM supporting 1024 QAM data rates and >20 dB accurate power controls. The linearity is well scaled with supply voltage from 2.8V to 5.5 V and insensitive to modulation bandwidths and duty cycles. With a 5 V supply, the PA has 32 dB gain and meets -41 dB DEVM for 1024 QAM, up to 20 dBm Pout and -35 dB DEVM for 256 QAM 802.11ac up to 21 dBm Pout. The design has also support a low power mode having 3 dB less linear power, with reduced current. With DPD, the low linearity mode can achieve similar linear power as the high linearity mode with 40 mA current reduction. The diverse features of the PA IC simplify front-end circuit designs of emerging high throughput radio standards.

关键词： WLAN 802.11ac/ax front-end design WLAN PA linear PA design

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A K-Band Low-Noise bipolar Class-C VCO For 5G Backhaul Systems in 55nm bicmos technology

A K-Band Low-Noise Bipolar Class-C VCO For 5G Backhaul Syste...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Lacaita, Niccolo Bassi, Matteo Mazzanti, Andrea Svelto, Francesco Univ Pavia Dept Elect Comp & Biomed Engn Pavia Italy

ISBN: (纸本)9781509063833

The development of 5G communication systems is underway. When employing 64 QAM, very low phase noise levels are required to limit EVM - i.e. less than -117dBc/Hz at 1MHz offset from f=20GHz. In this paper, the challenges of achieving such a low phase noise are discussed in detail. The choice between CMOS vs BJT devices is investigated and the impact of the base resistance intrinsic in BJT-based VCOs is addressed. BJT-based VCO shows similar to 2dB better phase noise when compared to CMOS-based VCO and low supply is employed. When higher supply is leveraged, BJT-based VCO advantage is kept, while CMOS-based VCO is not able to reach the targeted tuning range due to thick-oxide devices parasitics. To further minimize phase noise, emphasis is on the minimization of L/Q inductor versus quality factor ratio. Prototypes in a 55nm bicmos technology were operated at 2.5V supply with the largest amplitude allowed by reliability constraints. Measurements show a phase noise as low as -119dBc/Hz at 1MHz from a 20GHz carrier offset with a tuning range (TR) of 19% and FoM=-187dBc/Hz. Power consumption is 56mW. To the best of authors' knowledge, the presented VCO shows the lowest reported phase noise among state-of-the-art bicmos VCOs with TR>10%.

关键词： 5G mm-Wave E-Band VCO Phase Noise

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2012 IEEE bipolar/bicmos circuits and technology meeting, BCTM 2012

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BC...

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2012 IEEE bipolar/bicmos circuits and technology meeting, BCTM 2012

ISBN: (纸本)9781467330206

The proceedings contain 43 papers. The topics discussed include: dynamic electrothermal analysis of bipolar devices and circuits relying on multi-port positive fraction foster representation;characterization of mutual heating inside a SiGe ring oscillator;modeling collector current noise PSD of SiGe HBTs including self-heating and non-quasi-static effects;temperature and geometry dependence of the electrothermal instability of bipolar transistors;impact of the emitter stored charge on RF noise of junction bipolar transistors;examination of horizontal current bipolar transistor (HCBT) with double and single polysilicon region;design and analysis of new silicided nano crystal dots field programmable ESD protection structures in bicmos;and characteristics of GaAs spike doped collectors.

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A Low-Power 120-GHz Integrated Sixport Receiver Front-End with Digital Adjustable Gain in a 130-nm bicmos technology

A Low-Power 120-GHz Integrated Sixport Receiver Front-End wi...

引用

IEEE bipolar/bicmos circuits and technology meeting (BCTM)

作者： Voelkel, Matthias Hirsch, Hartmut Dietz, Marco Weigel, Robert Hagelauer, Amelie Kissinger, Dietmar FAU Erlangen Nurnberg Inst Elect Engn Cauerstr 9 D-91058 Erlangen Germany IHP Technol Pk 25 D-15236 Frankfurt Oder Germany Tech Univ Berlin Einsteinufer 17 D-10587 Berlin Germany

ISBN: (纸本)9781509063833

In this paper a 120 GHz monolithic low-power sixport receiver front-end including two variable gain amplifiers, a passive sixport network, four detectors and a digital serial interface (SPI) is presented. The measurement principle is based on the additive superposition of two incident millimeter-wave signals, whereas the superposition must be fulfilled under special conditions. After power detection, the quadrature components can be extracted. The proposed measurement system is well suited for industrial radar applications, as well as for biomedical applications and it is further more well suited for communication systems. The receiver has been designed using a 0.13 mu m SiGe bicmos process from IHP (SG13G2). The whole integrated circuit has a size of 1560 mu m x 900 mu m and only consumes 102.3 mW from a 3.3V supply. The receiver exhibits a 1 dB compression point of -13 dBm at the center frequency. The bandwidth is 15.5 GHz and covers the lower part of the D-Band. The gain of the input amplifier can be adjusted from 3 to 16 dB by a digital interface. The maximum power consumption of the VGA is 46.2 mW.

关键词： industrial radar communication receiver interferometer phase measurement sixport low power SiGe BiC-MOS millimeter-wave

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