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Introduction to the Special Issue on the IEEE bipolar/bicmos circuits and technology meeting

IEEE JOURNAL OF SOLID-STATE circuits 2005年第10期40卷 1995-1996页

作者： Walkey, DJ Carleton Univ Dept Elect Ottawa ON K1S 5B6 Canada

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关键词： Special issues and sections bicmos integrated circuits Silicon germanium Germanium silicon alloys Optical amplifiers Breakdown voltage Optical transmitters Clocks Gain Integrated circuit modeling

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A Q-Band Phased-Array Front-End with Integrated Wilkinson Couplers for Linear Power Combining in SiGe bicmos

A Q-Band Phased-Array Front-End with Integrated Wilkinson Co...

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bipolar/bicmos circuits and technology meeting

作者： Koh, Kwang-Jin Rebeiz, Gabriel M. Univ Calif San Diego Dept Elect & Comp Engn San Diego CA 92103 USA

ISBN: (纸本)9781424427253

A 4-element phased-array front-end receiver based on 4-bit RF phase shifters is designed for 36-46 GHz satellite communications. The phased-array uses a corporate-feed approach with integrated Wilkinson combiners for linear coherent power combining. The measured loss in the Wilkinson coupler is 0.5-0.6 dB at 30-50 GHz. The phased-array shows 10.4 dB of average power gain, <= 1.2 dB of RMS gain error, <= 8.7 degrees of RMS phase error and an IIP3 of -13.5 dBm per channel for all 4-bit phase states at 38.5 GHz. The chip consumes 118 mA from a 5 V supply voltage. The overall chip size is 1.4x1.7 mm(2) and includes all the digital control circuits (address decoders, registers, etc.) for the array.

关键词： bicmos analog integrated circuit millimeter wave phased array phase shifter radar SiGe bicmos Wilkinson coupler

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High-voltage HBTs compatible with high-speed SiGebicmos technology

High-voltage HBTs compatible with high-speed SiGeBiCMOS tech...

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8th IEEE Topical meeting on Silicon Monolithic Integrated circuits in RF Systems (SiRF 2008)

作者： Geynet, B. Chevalier, P. Chouteau, S. Avenier, G. Schwartzmann, T. Gloria, D. Dambrine, G. Danneville, F. Chantre, A. STMicroelect 850 Rue JEan Monnet F-38926 Crolles France UMR CNRS 8520 IEMN DHS F-59652 Villeneuve Dascq France

This paper describes the integration of high-voltage HBTs in a high-speed SiGe bicmos technology. HBTs with BVCEO from 2V to 5V featuring an all-implanted collector and fully compatible with a 230-GHz f(T) bicmos tech... 详细信息

ISBN: (纸本)9781424418558

关键词： high-speed bicmos technology Heterojunction bipolar Transistor (HBT) Silicon Germanium (SiGe) breakdown voltages millimeter-wave

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Temperature stability and reliability aspects of 77 GHz voltage controlled oscillators in a SiGe:C bicmos technology

Temperature stability and reliability aspects of 77 GHz volt...

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8th IEEE Topical meeting on Silicon Monolithic Integrated circuits in RF Systems (SiRF 2008)

作者： Fischer, Gerhard G. Glisic, Srdjan IHP D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781424418558

The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125 degrees C we get a low oscillation frequency shift Delta f(osc) = -1.2 GHz/100K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.

关键词： bipolar/bicmos reliability SiGe VCO

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0.13m SiGe bicmos technology for mm-wave applications

0.13m SiGe BiCMOS technology for mm-wave applications

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2008 IEEE bipolar/bicmos circuits and technology meeting

作者： Avenier, G. Chevalier, P. Troillard, G. Vandelle, B. Brossard, F. Depoyan, L. Buczko, M. Boret, S. Montusclat, S. Margain, A. Pruvost, S. Nicolson, S.T. Yau, K.H.K. Gloria, D. Dutartre, D. Voinigescu, S.P. Chantre, A. STMicroelectronics 850 rue Jean Monnet 38926 Crolles Cedex France Edward S. Rogers Sr. Dept. of ECE University of Toronto Toronto ON M5S 3G4 Canada

ISBN: (纸本)9781424427260

This paper presents a complete 0.13m SiGe bicmos technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. ©2008 IEEE.

关键词： Timing circuits

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Proceedings of the 2005 bipolar/bicmos circuits and technology meeting, BCTM

Proceedings of the 2005 Bipolar/BiCMOS Circuits and Technolo...

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2005 IEEE bipolar/bicmos circuits and technology meeting, BCTM

The proceedings contain 64 papers from the Proceedings of the 2005 bipolar/bicmos circuits and technology meeting, BCTM. The topics discussed include: polar modulation and bipolar RF power devices;offset voltage of Schottky-collector silicon-on-glass VPNP's;usage of HBTs beyond BVceo;the effects of layout variation on the thermal characteristics of SiGe HBTs;high voltage semiconductor devices: status and trends;NOR/OR register based ECL circuits for maximum data rate;input non-quasi-static effect in SiGe HBTs and its impact on noise modeling;20 GHzbipolar RF RMS power detectors;identification analysis of a new BJT parametric mismatch phenomenon;and on the delay times in vertically scaled SiGe HBTs.

关键词： CMOS integrated circuits

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A 3-bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0.12m SiGe bicmos technology

A 3-bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0....

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2008 IEEE bipolar/bicmos circuits and technology meeting

作者： Yao, Yuan Dai, Foster Irwin, J. David Jaeger, Richard C. Department of Electrical and Computer Engineering Auburn University Auburn AL 36849-5201 United States

ISBN: (纸本)9781424427260

A 3-bit ADC for X-band applications that can work at a sampling rate of 11 GS/s is presented in this paper. Current comparators are used to achieve the high sampling rate of 11 GHz at X-band. A 3-bit current-steering DAC is also designed for testing the high-speed ADC. The ADC-DAC RFIC is implemented in a 0.12 μm SiGe technology and occupies a core area of 1.0 x 0.8 mm2. The ADC can operate with a FOM of 3.08 pJ/conversion-step, consuming 0.22 W power with a 2.2 V power supply. It demonstrates a good performance at X-band sampling rate with the lowest power supply voltage, lowest power consumption, smallest core area and best FOM reported so far. The ADC-DAC RFIC is tested in a 44-pin CLLC package and achieves a peak SFDR of 28 dBc and a peak ENOB of 2.7 bits at 11 GS/s sampling rate. ©2008 IEEE.

关键词： Digital to analog conversion

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Low cost, highly flexible complementary bipolar transistors compatible with 0.18 or 0.13μm CMOS technology

Low cost, highly flexible complementary bipolar transistors ...

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bipolar/bicmos circuits and technology meeting

作者： E. J. Preisler L. Lao J. Zheng P. Hurwitz M. Racanelli Jazz Semiconductor Newport Beach CA USA

ISBN: (纸本)9781424427253

Both NPN and PNP bipolar transistors are modularly integrated at low cost into standard 0.18 mum and 0.13 mum CMOS process flows. The bipolar modules are of low complexity and thus cost, using only 4 dedicated masks for the NPN and only 2 for the PNP devices. The resulting devices cover an extremely wide range of application space. Devices range from around 2 V BV CEO and 115 GHz F T to 12 V BV CEO and 12 GHz F T . Multiple device types can be co-integrated with the addition of simple implant masking steps.

关键词： CMOS integrated circuits Implants CMOS process Silicon germanium CMOS technology bicmos integrated circuits Logic gates

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A SiGe bicmos operational amplifier with 48dB of gain and 9GHz unity gain bandwidth

A SiGe BiCMOS operational amplifier with 48dB of gain and 9G...

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bipolar/bicmos circuits and technology meeting

作者： Adam Hart Sorin P. Voinigescu The Edward S. Rogers Sr. Department of ECE University of Toronto Toronto ONT Canada

ISBN: (纸本)9781424427253

In this paper, we presents the design and implementation of a bicmos operational amplifier topology that operates from a 2.5 V supply and achieves record gain-bandwidth performance. First, a fully-differential, single stage folded-cascode with tunable common-mode feedback is described. In order to improve the DC gain of this circuit, a second version is implemented with differential gain boosting and achieves 48 dB of gain while maintaining a unity gain bandwidth of 9 GHz.

关键词： Gain Bandwidth bicmos integrated circuits Boosting Transistors Voltage measurement Operational amplifiers

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Footprint design optimization in SiGe bicmos SOI technology

Footprint design optimization in SiGe BiCMOS SOI technology

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bipolar/bicmos circuits and technology meeting

作者： Tianbing Chen Jeff Babcock Yen Nguyen Wendy Greig Natasha Lavrovskaya Todd Thibeault Scott Ruby Steve Adler Tracey Krakowski Jonggook Kim Alexei Sadovnikov Advanced Process Technology Development National Semiconductor Corporation Santa Clara CA USA

ISBN: (纸本)9781424427253

Footprint design in SiGe bicmos SOI technology is described in this paper to improve device performance matrix. The safe operating area (SOA) for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) is significantly improved as the footprint area increases. The Early voltage for SiGe HBT on SOI at medium-high bias range also increases substantially with footprint area increase. Peak f T and noise figure improves slightly with footprint, and peak f MAX improves slightly then decreases significantly at very large footprint area. A generic tube-area-limited thermal resistance model for bicmos devices on SOI is also proposed.

关键词： Silicon germanium Heterojunction bipolar transistors Electron tubes Extraterrestrial measurements Electrical resistance measurement Thermal resistance Transistors

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