检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是411-420 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A mixed signal wide-band bicmos frequency synthesizer for DVB application

A mixed signal wide-band BiCMOS frequency synthesizer for DV...

引用

bipolar/bicmos circuits and technology meeting

作者： Peng Yu Jun Yan Yin Shi Fa Foster Dai Suzhou-CAS Semiconductors Integrated Technology Research Center Suzhou Jiangsu China Department of Electrical Computer Engineering Aubum University Auburn AL USA

ISBN: (纸本)9781424427253

This paper presents a bicmos frequency synthesizer covering frequency range from 500 MHz to 2175 MHz which is fully compatible with DVB-S application. The frequency synthesizer consists of monolithic VCOs, utilizing on-chip symmetric inductor, high speed CML divider built with high performance BJT, and can achieve -80 dBc/Hz, -100 dBc/Hz, -123 dBc/Hz phase noise at 1 KHz, 100 KHz and 1 MHz carrier frequency offset, respectively. The 4 VCOs, which can be tuned from 2 GHz to 4.3 GHz with 20 % tuning range each and a maxim KVCO of 200 MHz/V, is divided by two or four to synthesis the desired DVB-S L-band (0.95-2.15 GHz) or other UHF-band frequency. Measure results show that this design works well over a temperature variation from 0degC to 85degC. The design is implemented with a 0.35 mum SiGe bicmos technology.

关键词： Voltage-controlled oscillators Noise Phase locked loops Phase noise Frequency synthesizers Temperature measurement Phase frequency detector

来源：评论

学校读者我要写书评

暂无评论

A 4–40MHz continuous-time LPF with on chip automatic tuning for a direct conversion DBS Tuner

A 4–40MHz continuous-time LPF with on chip automatic tuning...

引用

bipolar/bicmos circuits and technology meeting

作者： Bei Chen Fangxiong Chen Heping Ma Yin Shi Fa Foster Dai Suzhou-CAS Semiconductors Integrated Technology Research Center Suzhou China Department of Electrical and Computer Engineering Aubum University Auburn AL USA

ISBN: (纸本)9781424427253

A continuous-time 7 th -order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in a 0.35 um SiGe bicmos technology. The filterpsilas -3dB cutoff frequency f 0 can be programmed from 4 MHz to 40 MHz. Measurement results show that the filter has 0 dB passband gain, 30 nV/Hz frac12 input referred noise, -3 dBVrms passband IIP3, 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f 0 =20 MHz) from 5 V supply, and occupy an area of 0.5 mm 2 .

关键词： Tuning Satellite broadcasting Tuners Topology Frequency response Cutoff frequency bicmos integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Proceedings of the 2005 bipolar/bicmos circuits and technology meeting

Proceedings of the 2005 BIPOLAR/BiCMOS Circuits and Technolo...

引用

bipolar/bicmos circuits and technology meeting

Presents the front cover or splash screen of the proceedings.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Q-band phased-array front-end with integrated Wilkinson couplers for linear power combining in SiGe bicmos

A Q-band phased-array front-end with integrated Wilkinson co...

引用

bipolar/bicmos circuits and technology meeting

作者： Kwang-Jin Koh Gabriel M. Rebeiz Department of Electrical and Computer Engineering University of California San Diego CA USA

ISBN: (纸本)9781424427253

A 4-element phased-array front-end receiver based on 4-bit RF phase shifters is designed for 36-46 GHz satellite communications. The phased-array uses a corporate-feed approach with integrated Wilkinson combiners for linear coherent power combining. The measured loss in the Wilkinson coupler is 0.5-0.6 dB at 30-50 GHz. The phased-array shows 10.4 dB of average power gain, les1.2 dB of RMS gain error, les8.7deg of RMS phase error and an IIP3 of -13.5 dBm per channel for all 4-bit phase states at 38.5 GHz. The chip consumes 118 mA from a 5 V supply voltage. The overall chip size is 1.4times1.7 mm 2 and includes all the digital control circuits (address decoders, registers, etc.) for the array.

关键词： Arrays Phase shifters Couplers Gain Radio frequency Impedance Semiconductor device measurement

来源：评论

学校读者我要写书评

暂无评论

A 5GHz low power receiver front-end RFIC with one tail current implemented in SiGe bicmos technology

A 5GHz low power receiver front-end RFIC with one tail curre...

引用

bipolar/bicmos circuits and technology meeting

作者： Yuehai Jin Fa Foster Dai Department of Electrical and Computer Engineering Aubum University Auburn AL USA

ISBN: (纸本)9781424427253

This paper presents a novel RF receiver front-end using only one shared tail current for low power application. The 5 GHz receiver front-end RFIC includes a voltage controlled oscillator (VCO), a double balanced mixer and a low noise amplifier (LNA) in a cascoded topology. The receiver RFIC was implemented in a 0.5 m SiGe bicmos technology. The VCO oscillation frequency is around 5 GHz, targeting at the WLAN 802.11a application. The VCO phase noise was measured around -105 dBc/Hz at 1 MHz frequency offset. Intermediate frequency (IF) output is centered at frequency of 600 MHz using a low-IF architecture and the conversion gain is measured more than 15 dB. The 1 dB gain compression point and sensitivity of the frontend is measured greater than -14 dBm and smaller than - 60 dBm respectively. The front-end core consumes 3.3 mA current from a 3.3 V power supply and occupies 1.4 mm 2 area.

关键词： Mixers Voltage-controlled oscillators Topology Radio frequency Receivers Oscillators Frequency measurement

来源：评论

学校读者我要写书评

暂无评论

A 3-Bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0.12μm SiGe bicmos technology

A 3-Bit 2.2V 3.08pJ/conversion-step 11GS/s flash ADC in a 0....

引用

bipolar/bicmos circuits and technology meeting

作者： Yuan Yao Foster Dai J. David Irwin Richard C. Jaeger Department of Electrical and Computer Engineering Aubum University Auburn AL USA

ISBN: (纸本)9781424427253

A 3-bit ADC for X-band applications that can work at a sampling rate of 11 GS/s is presented in this paper. Current comparators are used to achieve the high sampling rate of 11 GHz at X-band. A 3-bit current-steering DAC is also designed for testing the high-speed ADC. The ADC-DAC RFIC is implemented in a 0.12 mum SiGe technology and occupies a core area of 1.0 x 0.8 mm 2 . The ADC can operate with a FOM of 3.08 pJ/conversion-step, consuming 0.22 W power with a 2.2 V power supply. It demonstrates a good performance at X-band sampling rate with the lowest power supply voltage, lowest power consumption, smallest core area and best FOM reported so far. The ADC-DAC RFIC is tested in a 44-pin CLLC package and achieves a peak SFDR of 28 dBc and a peak ENOB of 2.7 bits at 11 GS/s sampling rate.

关键词： Power supplies Power demand Silicon germanium Radiofrequency integrated circuits Decoding Quantization Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

Characterization and modeling of emitter-base leakage in high speed SiGe NPNs

Characterization and modeling of emitter-base leakage in hig...

引用

bipolar/bicmos circuits and technology meeting

作者： M. Dahlstrom R.A. Camillo-Castillo IBM Microelectronics Essex Junction VT USA IBM Microelectronics Division VT USA

ISBN: (纸本)9781424427253

Leakage through the base is a common yield detractor in SiGe NPNs. The defects are commonly referred to as dasiapipespsila and are manifested as a current path between emitter and collector independent of base bias. In this article we discuss pipes which have been observed due to retarded base growth. Advanced light/thermally induced voltage alterations (LIVA) and cross section transmission electron microscopy (XTEM) were used to identify these defects, which resulted in leakage paths through the base to the collector. The pipes were found to have resistances ranging 100-200 kOmega, and could be modeled as junction field-effect transistors (JFETs) in which the pipes serve as the channel and the base as the gate electrode. technology computer-aided design (TCAD) was utilized to model the pipes and provide insight into their behavior. In particular, the higher CE leakage currents of NPNs containing a selective collector implant are explained by changes in the conduction band resulting from the SIC implant. This correlates with observed NPN yield trends.

关键词： Implants Silicon carbide Silicon germanium Leakage current Imaging bicmos integrated circuits Logic gates

来源：评论

学校读者我要写书评

暂无评论

High-Voltage HBTs Compatible with High-Speed SiGe bicmos technology

High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Tec...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： B. Geynet P. Chevalier S. Chouteau G. Avenier T. Schwartzmann D. Gloria G. Dambrine F. Danneville A. Chantre IEMN-DHS UMR CNRS 8520 Villeneuve d'Ascq France STMicroelectronics Crolles France

This paper describes the integration of high-voltage HBTs in a high-speed SiGe bicmos technology. HBTs with BV CEO from 2 V to 5 V featuring an all-implanted collector and fully compatible with a 230-GHz f T bicmos ... 详细信息

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Silicon carbide Heterojunction bipolar transistors CMOS technology Millimeter wave communication Millimeter wave technology Millimeter wave radar Millimeter wave transistors

来源：评论

学校读者我要写书评

暂无评论

Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C bicmos technology

Temperature Stability and Reliability Aspects of 77 GHz Volt...

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Gerhard G. Fischer Srdjan Glisic IHP Frankfurt Germany

The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltaf osc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.

关键词： Stability Voltage-controlled oscillators bicmos integrated circuits Temperature distribution bipolar transistors Heterojunction bipolar transistors MOS devices Varactors Power generation Frequency

来源：评论

学校读者我要写书评

暂无评论

Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Peng Cheng Aravind Appaswamy Marco Bellini John D. Cressler School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.

关键词： Hot carriers Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Charge carrier processes Impact ionization Stress bicmos integrated circuits Electric breakdown Degradation

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 38 39 40 41 42 43 44 45 46 47 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：