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Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

引用

Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Peng Cheng Aravind Appaswamy Marco Bellini John D. Cressler School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA

A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.

关键词： Hot carriers Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Charge carrier processes Impact ionization Stress bicmos integrated circuits Electric breakdown Degradation

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A 30 GS/s 4-bit binary weighted DAC in SiGebicmos technology

A 30 GS/s 4-bit binary weighted DAC in SiGeBiCMOS technology

引用

bipolar/bicmos circuits and technology meeting

作者： Halder, Samiran Gustat, Hans IHP Circuit Design Dept D-15236 Frankfurt Germany

ISBN: (纸本)9781424410187

This paper presents a 4-bit 30GS/s binary weighted DAC in 0.25 mu m bicmos technology. The binary weighting function was implemented in the load resistor instead of the current sources. This DAC showed 0.49 LSB and 0.57 LSB of INL and DNL respectively. 0.92pJ FOM was achieved with 3.5V of power supply at a conversion rate of 30GHz.

关键词： bipolar circuit high-speed logic current steering DAC unary weighted architecture resistive weighting

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Evaluation of SiGeCHBT varactor using different collector access and base-collector junction configuration in bicmos technologies

Evaluation of SiGeCHBT varactor using different collector ac...

引用

bipolar/bicmos circuits and technology meeting

作者： Morandini, Yvan Larchanche, Jean-Francois Gaquiere, Christophe STMicroelect 850 Rue Jean Monnet F-38926 Crolles France IEMN F-59652 Villeneuve Dascq France

ISBN: (纸本)9781424410187

This paper is focused on the evaluation of SiGeC HBT varactor in bicmos technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.

关键词： bicmos technology Varactors Quality factor

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On-chip mm-wave passives

On-chip mm-wave passives

引用

bipolar/bicmos circuits and technology meeting

作者： van Noort, Wibo D. Detcheverry, C. Rodriguez, A. Pijper, R. NXP Semicond POB 1279 Hopewell Jct NY 12533 USA NXP Semicond Crolles France NXP Semicond Res Eindhoven Netherlands

ISBN: (纸本)9781424410187

Waveguides and varactors are evaluated with their application in integrated SiGe mm-wave circuits in mind. Coplanar waveguides and hyperabrupt varactors show adequate performance when carefully designed. Waveguides with similar to 2dB/cm RF loss at 10 GHz and varactors with a tuning-range Q(min) product of 0.7 THz are demonstrated.

关键词： coplanar waveguides passives varactor varicap variable capacitor mm-wave W-band bicmos bipolar silicon

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Large signal modeling of high efficiency SiGeHBTs for power amplifier applications

Large signal modeling of high efficiency SiGeHBTs for power ...

引用

bipolar/bicmos circuits and technology meeting

作者： Malladi, Ramana M. McPartlin, Michael Joseph, Alvin Lafontaine, Hugues Doherty, Mark IBM Microelect Essex Jct VT 05452 USA SiGe Semicond Corp Methuen MA 01844 USA

ISBN: (纸本)9781424410187

Large-signal compact modeling of SiGe HBTs integrated into a new IBM bicmos technology geared towards high-efficiency Power Amplifiers is described. The technology exhibits a record 73% PAE at 5.75GHz in class AB operation. A scalable HiCUM model (High current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, f(T) characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.

关键词： large-signal Power amplifiers Silicon germanium bicmos technology Modeling

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Integration of a 5.5V BV_CEOSiGeHBT within a 200 GHz SiGebicmos process flow

Integration of a 5.5V BV<sub>CEO</sub>SiGeHBT within a 200 G...

引用

bipolar/bicmos circuits and technology meeting

作者： Preisler, E. J. Matine, N. Zheng, J. Cheskis, D. Hurwitz, P. Racanelli, M. Jazz Semicond Newport Beach CA 92660 USA

ISBN: (纸本)9781424410187

A novel bicmos integration scheme is described whereby high-performance, high breakdown-voltage SiGe HBTs can be integrated alongside ultra high performance, 200 GHz SiGe HBTs. The integration scheme is summarized and proof-of-concept data is shown to indicate the validity of the proposed scheme. It is shown that a 5.5V BVCEO HBT with peak F-T of 45 GHz can be manufactured on the same wafer as a 200 GHz HBT with zero or one additional masking layers.

关键词： silicon bipolar/bicmos process technology power devices

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On the feasibility of few-THz bipolar transistors

On the feasibility of few-THz bipolar transistors

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bipolar/bicmos circuits and technology meeting

作者： Rodwell, Mark Lind, E. Griffith, Z. Crook, A. M. Bank, S. R. Singisetti, U. Wistey, M. Burek, G. Gossard, A. C. Univ Calif Santa Barbara Dept ECE Santa Barbara CA 93106 USA Univ Texas Austin Dept ECE Austin TX 78712 USA Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA

ISBN: (纸本)9781424410187

We review the limits faced in scaling of InP-based bipolar transistors for increased device bandwidth. Emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth. Devices with 1-1.5 THz simultaneous f(tau) and f(max) are feasible;these will enable 75 monolithic amplifiers and medium-scale digital ICs at similar to 400-500 GHz clock rate.

关键词： bicmos technology

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Electrically programmable fuses for analog and mixed signal applications in silicon germanium bicmos technologies

Electrically programmable fuses for analog and mixed signal ...

引用

bipolar/bicmos circuits and technology meeting

作者： Gebreselasie, E. G. Voldman, S. H. He, Z. X. Coolbaugh, D. Rassel, R. M. Kirihata, T. Paganini, A. Cox, C. G. Mongeon, S. A. Onge, S. A. St. Dunn, J. S. Halbach, R. E. Lukaitis, J. M. IBM Microelect MS 972F1000 River St Essex Jct VT 05452 USA IBM Microelect Hopewell Jct NY 12533 USA

ISBN: (纸本)9781424410187

An electrically programmable fuse, known as "eFUSE," is used to provide passive device trimming and circuitry fine tuning for analog and mixed signal applications in Silicon Germanium bicmos technologies will be discussed. Timing analysis, pre and post-programming electrical characterization, and electro-migration failure analysis will be presented.

关键词： bicmos silicon germanium fuse networks electrically programmable fuses eFUSE

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A 0.35 μm SiGebicmos technology for power amplifier applications

A 0.35 μm SiGeBiCMOS technology for power amplifier applica...

引用

bipolar/bicmos circuits and technology meeting

作者： Joseph, Alvin Liu, Qizhi Hodge, Wade Gray, Peter Stein, Kenneth Previti-Kelly, Rose Lindgren, Peter Gebreselasie, Ephrem Voegeli, Ben Candra, Panglijen Hershberger, Doug Malladi, Ramana Wang, Ping-Chuan Watson, Kim He, Zhong-Xiang Dunn, Jim IBM Corp Semicond Res & Dev Ctr Syst & Technol Grp 1000 River Rd Essex Jct VT 05452 USA IBM Corp Semicond Res & Dev Ctr Syst & Technol Grp Waltham MA USA Green Mt Coffee Waterbury CT 05676 USA IBM Corp Syst & Technol Grp East Fishkill NY USA

ISBN: (纸本)9781424410187

In this paper we introduce, a state-of-the-art SiGe bicmos power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (f(T) - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 mu m lithography node with 3.3 V / 5.0 V dualgate CMOS technology and high-quality passives on a 50 *** substrate.

关键词： bicmos technology

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A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGebicmos technology

A 4-GHz band ultra-wideband voltage controlled oscillator IC...

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bipolar/bicmos circuits and technology meeting

作者： Kurachi, Satoshi Murata, Yusuke Ishikawa, Shohei Itoh, Nobuyuki Yonemura, Koji Yoshimasu, Toshihiko Waseda Univ Grad Sch Informat Prod & Syst Tokyo Japan Toshiba Co Ltd Semicond Co Tokyo Japan

ISBN: (纸本)9781424410187

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 mu m SiGe bicmos technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

关键词： silicon bipolar/bicmos process technology VCO wide tuning range resonant circuit

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