A manufacturable 10V-BVce/15GHz-f(T) complementary SiGe bicmos foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controlla...
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ISBN:
(纸本)9781424410187
A manufacturable 10V-BVce/15GHz-f(T) complementary SiGe bicmos foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620GHz center dot V.
Power performance, linearity, and reliability are investigated for aggressive V-C bias (i.e., under strong base-current reversal and pinch-in) on cascode SiGe HBTs, in order to determine the influence of avalanche eff...
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ISBN:
(纸本)9781424410187
Power performance, linearity, and reliability are investigated for aggressive V-C bias (i.e., under strong base-current reversal and pinch-in) on cascode SiGe HBTs, in order to determine the influence of avalanche effects on PA performance and reliability. Moderate gain and linearity degradation are associated with excessive V-C bias (pinch-in), and dynamic stress at high V-C shows behavior similar to mixed-mode (simultaneous high J(E) + high V-CB) stress. No significant degradation to PA performance was observed during dynamic stress.
This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) bicmostechnology. The receiver achieves a gain of 11 dB, an operational bandwi...
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ISBN:
(纸本)9781424410187
This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) bicmostechnology. The receiver achieves a gain of 11 dB, an operational bandwidth from 8.0 to 10.7 GHz, an average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP3) of-13 dBm, while only dissipating 33 mW of power. The receiver also provides 32 distinct phase states from 0 to 360 degrees, with an rms phase error < 9 degrees. This level of circuit performance and integration capability demonstrates the benefits of SiGe bicmostechnology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.
Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes undamping for frequencies up tofu. An active negative resistance can also be realized base...
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ISBN:
(纸本)9781424410187
Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes undamping for frequencies up tofu. An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25 mu m SiGe:C bicmostechnology, achieves a measured frequency tuning range from 53.2 to 57.6GHz and a phase noise of -100 dBc/Hz at 1MHz from the carrier.
This paper describes the development of a thin-SOI pup SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full...
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ISBN:
(纸本)9781424410187
This paper describes the development of a thin-SOI pup SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130nm thin-SOI complementary SiGeC bicmostechnology are reported.
Implementation of a very fast high voltage junction diode in a bicmostechnology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored ch...
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ISBN:
(纸本)9781424410187
Implementation of a very fast high voltage junction diode in a bicmostechnology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored charge compared to a conventional junction diode in a bicmostechnology. Using the suggested diode structure, one can achieve the required isolation to the substrate as well as obtain the switching performance close to that of an ideal Schottky diode. It is also possible to integrate this fast switching diode structure into a LDMOS device to help improve the parasitic performance of the LDMOS and increase its switching speed.
A 10 Mbps wire-line transceiver compatible with the RS-485 standard is implemented in SiGe bicmostechnology. This general purpose SiGe bus transceiver represents the first demonstration of a wide temperature range (-...
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ISBN:
(纸本)9781424410187
A 10 Mbps wire-line transceiver compatible with the RS-485 standard is implemented in SiGe bicmostechnology. This general purpose SiGe bus transceiver represents the first demonstration of a wide temperature range (-180 degrees C to +27 degrees C enabled, radiation tolerant as built, wire-line transceiver, and is intended for use in emerging space system avionics platforms. Robust functionality within specifications from -180 degrees C to +27 degrees C is demonstrated.
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