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Development of embedded three-dimensional 35-nF/mm² MIM capacitor and bicmos circuits characterization

IEEE JOURNAL OF SOLID-STATE circuits 2007年第9期42卷 1842-1850页

作者： Giraudin, Jean-Christophe Badets, Franck Blanc, Jean-Pierre Chataigner, Emmanuel Chappaz, Cedrick Regolini, Jorge Luis Delpech, Philippe STMicroelect F-38926 Crolles France

This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si(3)N(4), Al(2)O(3), Ta(2)O(5) and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al(2)O(3) deposited by ALD, high density of 35 nF/mm(2) is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in bicmos technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (WO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.

关键词： bicmos integrated circuits capacitors filters frequency synthesizers MIM devices phase-locked loops voltagecontrolled oscillators

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A 12-bit 65 MS/s pipeline A/D converter in 0.18 μm SiGebicmos

A 12-bit 65 MS/s pipeline A/D converter in 0.18 μm SiGeBiCM...

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bipolar/bicmos circuits and technology meeting

作者： Devarajan, Siddharth Gutmann, Ronald J. Rose, Kenneth Rensselaer Polytech Inst Ctr Integrated Elect Troy NY 12180 USA

ISBN: (纸本)9781424410187

This work discusses the benefits of a SiGe bicmos implementation over a CMOS implementation for pipeline A/Ds. While various circuit blocks in a pipeline A[D can benefit from the higher transconductance (g(m)), higher unity gain frequency (f(T)) and lower noise of SiGe HBTs, this work focuses on the most critical block in a pipeline A/D, the operational transconductance amplifier (OTA). An OTA employing an all NMOS pre-amplifier followed by a cascoded SiGe HBT stage with actively cascoded PMOS loads is designed. A prototype 12-bit pipeline A/D achieves a measured SNDR of 62.6 dB and a SFDR of 73.4 dB at 65 MS/s with a power dissipation of 325 mW and operates from dual 1.8 V and 3.3 V supplies.

关键词： pipeline A/D converter SiGebicmos operational transconductance amplifier (OTA)

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Design and scaling of W-Band SiGebicmos VCOs

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IEEE JOURNAL OF SOLID-STATE circuits 2007年第9期42卷 1821-1833页

作者： Nicolson, Sean T. Yau, Kenneth H. K. Chevalier, Pascal Chantre, Alain Sautreuil, Bernard Tang, Keith W. Voinigescu, Sorin P. Univ Toronto Dept Elect & Comp Engn Toronto ON M5G 3G4 Canada STMicroelect F-38926 Crolles France

This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe bicmos technology, with 1%,MOS and HBT varactors, and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise, it is shown that VCOs can be used to monitor the mm-wave noise performance of SiGe HBTs. Measurements show a 106 GHz VCO operating from 2.5 V with phase noise of - 101.3 dBc/Hz at I MHz offset, which delivers +2.5 dBm of differential output power at 25 degrees C, with operation verified up to 125 degrees C. A bicmos VCO with a differential MOS-HBT cascode output buffer using 130 nm MOSFETs delivers +10.5 dBm of output power at 87 GHz.

关键词： terins-Millimeter-wave integrated circuits phase noise process monitor SiGebicmos technology voltage-controlled oscillators W-band voltage-controlled oscillators.

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A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C bicmos technology

A novel isolation scheme featuring cavities in the collector...

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Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Choi, L. J. Van Huylenbroeck, S. Donkers, J. van Noort, W. D. Piontek, A. Sibaja-Hernandez, A. Meunier-Beillard, P. Neuilly, F. Kunnen, E. Leray, P. Vleugels, F. Venegas, R. Hijzen, E. Decoutere, S. IMEC Interuniv Microelect Ctr Kapeldreef 75 B-3001 Louvain Belgium

ISBN: (纸本)9780780397644

A novel isolation scheme is presented in this work, which uses oxide filled cavities in the collector to separate the extrinsic base and collector regions. When incorporated in our 0.13 mu m SiGe:C bicmos technology, a further improvement of the device RF performance is obtained, yielding devices with f(T)/f(max) values of 210/290GHz and 255/210GHz.

关键词： heterojunction bipolar transistor (HBT) Silicon-Germanium (SiGe) bicmos technology

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Development of embedded three-dimensional 35-nF/mm² MIM capacitor and bicmos circuits characterization

Development of embedded three-dimensional 35-nF/mm<SUP>2</SU...

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bipolar/bicmos circuits and technology meeting

作者： Giraudin, Jean-Christophe Badets, Franck Blanc, Jean-Pierre Chataigner, Emmanuel Chappaz, Cedrick Regolini, Jorge Luis Delpech, Philippe STMicroelect F-38926 Crolles France

关键词： bicmos integrated circuits capacitors filters frequency synthesizers MIM devices phase-locked loops voltagecontrolled oscillators

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A bicmos SiGe direct-conversion DBS satellite TV tuner with on-chip ADCs for SiP integration with a CMOS demodulator-on-host

A BiCMOS SiGe direct-conversion DBS satellite TV tuner with ...

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2007 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Maxim, A. Silicon Laboratories Inc. Austin TX

ISBN: (纸本)9781424410194

Partitioning a DBS satellite TV receiver in a front-end RF-to-digital tuner that includes the baseband ADC converters and a digital-only demodulator-on-host resulted in a low cost and a good isolation between the analog front-end and the digital back-end, having no Interface components and noise coupling issues. The two ICs were assembled together achieving a system-in-package. A direct-conversion bicmos tuner benefits from the low 1/f noise and high fT bipolar transistors resulting in a lower noise figure in comparison with CMOS implementations. The on-chip LNA noise was reduced by using a noise cancellation technique that rejects the noise contribution of the input devices, eliminating the need for an external LNA. The DC offset cancellation loop capacitors were Integrated on-chip by combining multiple offset loops with a Miller capacitance multiplication. The die area was significantly reduced by replacing the multi-oscillator solution used at present with a single high frequency Colpitts oscillator followed by a ratiometric frequency divider that generates the local oscillator signals for the entire satellite TV L-band. © 2007 IEEE.

关键词： Tuners

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A zero-second-IF SiGe bicmos satellite radio tuner using a single PLL for both RF and if LO generation and a replica ring-VCO calibrated if filter

A zero-second-IF SiGe BiCMOS satellite radio tuner using a s...

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2007 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Maxim, A. Gheorge, M. Turinici, C. Maxim Inc. Austin TX

ISBN: (纸本)9781424410194

A fully-integrated tuner for digital satellite audio radio applications using a second-zero-IF dual conversion architecture was realized in a 0.2μm SiGe bicmos technology. An autonomous RF-AGC and a channel decoder IC controlled IF-AGC were used to optimize the signal path gain for a wide range of input signal levels. A single PLL drives both RF and IF mixers, resulting in a smaller die area and lower power dissipation. Down-converting the signal to baseband further reduces tuner's power due to a lower required ADC sampling frequency and resolution. Providing a digital baseband I/Q output allows the implementation of the channel decode IC in a standard digital CMOS process, reducing the overall receiver cost. SDARS tuner performance includes: 5dB noise figure, 55dB image rejection, -100dBm input sensitivity, +15dBm IIP3 at min gain, 40/60dB RF/IF AGC range, 120mA current consumption from a 3.3V supply and 15mm 2 die area. © 2007 IEEE.

关键词： bicmos technology

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0.155-2.5Gbps SiGe bicmos burst-mode laser driver using a digital implementation of the automatic power control loop

0.155-2.5Gbps SiGe BiCMOS burst-mode laser driver using a di...

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2007 IEEE bipolar/bicmos circuits and technology meeting, BCTM

作者： Maxim, Adrian Maxim Inc. 8713 Cobblestone Austin TX 78735

ISBN: (纸本)9781424410194

A multi-standard laser driver for G-PON/E-PON applications supporting data rates up to 2.5Gbps was realized in a 0.2μm SiGe bicmos technology. A fast switching bias current generator that handles minimum burst on/off times of 576/96ns was achieved by building a scaled-down replica signal path. A low supply voltage operation was ensured using differential switches with resistor tail and a common-mode loop that sets the modulation dependent driving voltage swing and tail current values. A digital automatic power control loop was implemented to maintain a constant average optical power over temperature corners and transmitter lifetime, while allowing long burst-off times. The driver specifications include: 10 to 80mA modulation current range, 1 to 80mA bias current range, 155Mbps to 2.5Gbps data rate, pp deterministic jitter, 30mA current from a 3 to 3.6V supply and 2.5×2.7mm2 die area. © 2007 IEEE.

关键词： Semiconductor lasers

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Design and scaling of W-Band SiGebicmos VCOs

Design and scaling of W-Band SiGeBiCMOS VCOs

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bipolar/bicmos circuits and technology meeting

关键词： terins-Millimeter-wave integrated circuits phase noise process monitor SiGebicmos technology voltage-controlled oscillators W-band voltage-controlled oscillators.

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60 GHz receiver building blocks in SiGebicmos

60 GHz receiver building blocks in SiGeBiCMOS

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Topical meeting on Silicon Monolithic Integrated circuits in RF Systems

作者： Sun, Yaoming Herzel, Frank Borngraeber, Johannes Kraemer, Rolf IHP Technol Pk 25 D-15236 Frankfurt Germany

ISBN: (纸本)9780780397644

This paper presents two receiver building blocks for 60 GHz WLAN application in SiGe bicmos technology: a two-stage cascode LNA and a down-conversion mixer with single-ended input, differential output. The LNA has a measured gain of 20 dB. The input and output return losses are -15 dB and -9 dB. This LNA is optimized to have a third-order maximum-flat frequency response. Its 3 dB band-width is from 56 to 65 GHz. The receiver RF filter can be removed by using this LNA. The down-conversion mixer core is realized by using half a Gilbert cell. It has a measured conversion gain of 10.5 dB and it 1-dB compression point of -2 dBm. The simulated noise figures are 6 and 14 dB for the LNA and mixer, respectively.

关键词： LNA mixer 60 GHz SiGe bipolar/bicmos receiver WLAN

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