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Introduction to the Special Issue on the 2003 IEEE bipolar/bicmos circuits and technology meeting

引用

IEEE JOURNAL OF SOLID-STATE circuits 2004年第10期39卷 1724-1726页

作者： El-Gamal, M McGill Univ Dept Elect & Comp Engn Montreal PQ H3A 2A7 Canada

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A 30 GS/s 4-Bit Binary Weighted DAC in SiGe bicmos technology

A 30 GS/s 4-Bit Binary Weighted DAC in SiGe BiCMOS Technolog...

引用

bipolar/bicmos circuits and technology meeting

作者： Samiran Halder Hans Gustat Circuit Design Department IHP Frankfurt Germany

ISBN: (纸本)9781424410187;1424410185

This paper presents a 4-bit 30 GS/S binary weighted DAC in 0.25 μm bicmos technology. The binary weighting function was implemented in the load resistor instead of the current sources. This DAC showed 0.49 LSB and 0.57 LSB of INL and DNL respectively. 0.92 pJ FOM was achieved with 3.5V of power supply at a conversion rate of 30 GHz.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Switches Sampling methods Resistors Signal synthesis Phase locked loops Laser radar Linearity

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Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC bicmos technology

Development of a self-aligned pnp HBT for a complementary th...

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bipolar/bicmos circuits and technology meeting

作者： J. Duvernay F. Brossard G. Borot L. Boissonnet B. Vandelle L. Rubaldo F. Deleglise G. Avenier P. Chevalier B. Rauber D. Dutartre A. Chantre STMicroelectronics Crolles France

This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full... 详细信息

ISBN: (纸本)9781424410187;1424410185

关键词： Heterojunction bipolar transistors bicmos integrated circuits Epitaxial growth Integrated circuit technology Silicon germanium Germanium silicon alloys Substrates Costs Fabrication CMOS technology

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Proceedings of The 2004 bipolar/bicmos circuits and technology meeting

Proceedings of The 2004 Bipolar/BiCMOS Circuits and Technolo...

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Proceedings of the 2004 IEEE bipolar/bicmos circuits and technology meeting

The proceedings contain 71 papers from the Proceedings of the 2004 bipolar/bicmos circuits and technology meeting. The topics discussed include: the future of complementary bipolar;current status of GaN heterojunction bipolar transistors;a novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics;optimization of LNA and PA circuits for a 1.8V bicmos Si Bluetooth transceiver;differential distributed amplifier and oscillator in SiGe bicmos using close-packed interleaved on-chip transmission lines;SiGe bipolar technology for automotive radar applications;and investigation of advanced SiGe heterojunction bipolar transistors at high power densities.

关键词： Heterojunction bipolar transistors

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A 10 Mbps SiGe bicmos Transceiver for Operation Down to Cryogenic Temperatures

A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryo...

引用

bipolar/bicmos circuits and technology meeting

作者： Steven Finn Jiahui Yuan Ram Krithivasan Laleh Najafizadeh Peng Cheng John D. Cressler Georgia Institute of Technology School of ECE Atlanta GA USA

ISBN: (纸本)9781424410187;1424410185

A 10 Mbps wire-line transceiver compatible with the RS-485 standard is implemented in SiGe bicmos technology. This general purpose SiGe bus transceiver represents the first demonstration of a wide temperature range (-180degC to +27degC) enabled, radiation tolerant as built, wire-line transceiver, and is intended for use in emerging space system avionics platforms. Robust functionality within specifications from -180degC to +27degC is demonstrated.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Transceivers Cryogenics Temperature Heterojunction bipolar transistors Voltage CMOS technology Space technology

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High speed junction diodes in bicmos technologies

High speed junction diodes in BiCMOS technologies

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bipolar/bicmos circuits and technology meeting

作者： Sameer Pendharkar Joe Trogolo Texas Instruments Inc. Dallas TX USA

ISBN: (纸本)9781424410187;1424410185

Implementation of a very fast high voltage junction diode in a bicmos technology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored charge compared to a conventional junction diode in a bicmos technology. Using the suggested diode structure, one can achieve the required isolation to the substrate as well as obtain the switching performance close to that of an ideal Schottky diode. It is also possible to integrate this fast switching diode structure into a LDMOS device to help improve the parasitic performance of the LDMOS and increase its switching speed.

关键词： bicmos integrated circuits Schottky diodes Switches Current control Low voltage Topology Voltage control Isolation technology Inductors Power conversion

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On the Feasibility of few-THz bipolar Transistors

On the Feasibility of few-THz Bipolar Transistors

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bipolar/bicmos circuits and technology meeting

作者： Mark Rodwell E. Lind Z. Griffith A. M. Crook S. R. Bank U. Singisetti M. Wistey G. Burek A.C. Gossard ECE and Materials Departments University of California Santa Barbara CA USA ECE Department University of Technology Austin TX USA

ISBN: (纸本)9781424410187;1424410185

We review the limits faced in seating of InP-based bipolar transistors for increased device bandwidth. Emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth. Devices with 1-1.5 THz simultaneous f tau , and f max are feasible; these will enable 750 GHz monolithic amplifiers and medium-scale digital ICs at ~400-500 GHz clock rate.

关键词： bipolar transistors Indium phosphide Bandwidth Silicon germanium Germanium silicon alloys Cutoff frequency Heterojunction bipolar transistors MOSFETs CMOS process bicmos integrated circuits

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Integration of a 5.5V BVCEO SiGe HBT within a 200 GHz SiGe bicmos process flow

Integration of a 5.5V BVCEO SiGe HBT within a 200 GHz SiGe B...

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bipolar/bicmos circuits and technology meeting

作者： E. J. Preisler N. Matine J. Zheng D. Cheskis P. Hurwitz M. Racanelli Jazz Semiconductor Newport Beach CA USA

A novel bicmos integration scheme is described whereby high-performance, high breakdown-voltage SiGe HBTs can be integrated alongside ultra high performance, 200 GHz SiGe HBTs. The integration scheme is summarized and proof-of-concept data is shown to indicate the validity of the proposed scheme. It is shown that a 5.5 V BV CEO HBT with peak F T of 45 GHz can be manufactured on the same wafer as a 200 GHz HBT with zero or one additional masking layers.

关键词： Heterojunction bipolar transistors Implants Silicon germanium Germanium silicon alloys bicmos integrated circuits Voltage Costs USA Councils Manufacturing processes Cutoff frequency

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Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in bicmos technologies

Evaluation of SiGeC HBT Varactor using different Collector a...

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bipolar/bicmos circuits and technology meeting

作者： Yvan Morandini Jean-Francois Larchanche Christophe Gaquiere IEMN Cite Scientifique Avenue Poincare Villeneuve d’Ascq Cedex France STMicroelectronics Crolles Cedex France

ISBN: (纸本)9781424410187;1424410185

This paper is focused on the evaluation of SiGeC HBT varactor in bicmos technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.

关键词： Heterojunction bipolar transistors Varactors bicmos integrated circuits Implants Silicon carbide Silicon germanium Germanium silicon alloys Capacitance Costs Q factor

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A 10V complementary SiGe bicmos foundry process for high-speed and high-voltage analog applications

A 10V complementary SiGe BiCMOS foundry process for high-spe...

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bipolar/bicmos circuits and technology meeting

作者： T. Tominari M. Miura H. Shimamoto M. Arai Y. Yoshida H. Sato T. Aoki H. Nonami S. Wada H. Hosoe K. Washio T. Hashimoto Micro Device Division Hitachi and Limited Tokyo Japan Central Research Laboratory Hitachi and Limited Japan Renesas Northern Japan Semiconductor Inc. Japan Hitachi ULSI Systems Company Limited Japan

A manufacturable 10V-BV cc /15GHz-f r complementary SiGe bicmos foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and control... 详细信息

ISBN: (纸本)9781424410187;1424410185

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Foundries Heterojunction bipolar transistors Driver circuits Circuit testing Voltage Design optimization Fabrication

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