检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

970 篇 会议
134 篇 期刊文献

馆藏范围

1,104 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

660 篇 工学
- 493 篇 电气工程
- 244 篇 电子科学与技术（可...
- 95 篇 计算机科学与技术...
- 86 篇 信息与通信工程
- 85 篇 材料科学与工程（可...
- 29 篇 软件工程
- 16 篇 控制科学与工程
- 14 篇 仪器科学与技术
- 11 篇 化学工程与技术
- 7 篇 冶金工程
- 6 篇 光学工程
- 5 篇 动力工程及工程热...
- 4 篇 建筑学
- 2 篇 力学（可授工学、理...
- 2 篇 轻工技术与工程
- 1 篇 机械工程
- 1 篇 土木工程
- 1 篇 测绘科学与技术
- 1 篇 航空宇航科学与技...
136 篇 理学
- 117 篇 物理学
- 23 篇 数学
- 12 篇 化学
- 4 篇 统计学（可授理学、...
- 1 篇 系统科学
35 篇 管理学
- 34 篇 管理科学与工程(可...
- 6 篇 工商管理
6 篇 经济学
- 6 篇 应用经济学
1 篇 法学
- 1 篇 社会学
1 篇 医学
- 1 篇 临床医学

主题

501 篇 bicmos integrate...
209 篇 silicon germaniu...
168 篇 heterojunction b...
150 篇 cmos technology
137 篇 germanium silico...
100 篇 bipolar transist...
92 篇 radio frequency
86 篇 cmos integrated ...
75 篇 cmos process
59 篇 implants
58 篇 voltage
53 篇 bicmos
48 篇 isolation techno...
40 篇 silicon
38 篇 sige
35 篇 bicmos technolog...
34 篇 power amplifiers
34 篇 mos devices
33 篇 gain
33 篇 capacitance

机构

31 篇 ihp
29 篇 stmicroelectroni...
10 篇 stmicroelect f-3...
10 篇 school of electr...
9 篇 ibm thomas j. wa...
9 篇 imec leuven
9 篇 auburn univ dept...
8 篇 ihp d-15236 fran...
8 篇 texas instrument...
7 篇 philips research...
7 篇 georgia inst tec...
7 篇 ibm corp thomas ...
6 篇 microelectronics...
6 篇 stmicroelectroni...
6 篇 ihp technol pk 2...
6 篇 central research...
6 篇 ibm microelectro...
5 篇 stmicroelectroni...
5 篇 texas tech univ ...
5 篇 nxp semicond res...

作者

22 篇 cressler john d.
21 篇 p. chevalier
20 篇 b. heinemann
19 篇 d. knoll
18 篇 r. barth
17 篇 a. chantre
16 篇 b. tillack
13 篇 h. rucker
13 篇 chevalier p.
13 篇 w. winkler
13 篇 p. schley
12 篇 g. avenier
12 篇 t. yamazaki
11 篇 d. harame
10 篇 s. marschmeyer
10 篇 john d. cressler
10 篇 dai fa foster
10 篇 j. dunn
10 篇 a. fox
10 篇 s. decoutere

语言

1,104 篇 英文

检索条件"任意字段=Bipolar/BiCMOS Circuits and Technology Meeting"

共 1104 条记录，以下是461-470 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

On-chip mm-Wave passives

On-chip mm-Wave passives

引用

bipolar/bicmos circuits and technology meeting

作者： Wibo D. van Noort C. Detchevery A. Rodriguez R. Pijper NXP semiconductors Hopewell Junction NY USA NXP semiconductors Crolles France NXP Semiconductors research Eindhoven The Netherlands

Waveguides and varactors are evaluated with their application in integrated SiGe mm-wave circuits in mind. Coplanar waveguides and hyperabrupt varactors show adequate performance when carefully designed. Waveguides wi... 详细信息

ISBN: (纸本)9781424410187;1424410185

关键词： Dielectric substrates Varactors Q factor Dielectric losses Coplanar waveguides Radio frequency Thin film inductors bicmos integrated circuits Parasitic capacitance Conductivity

来源：评论

学校读者我要写书评

暂无评论

Impact of layout and process on RF and analog performances of 3D damascene MIM capacitors

Impact of layout and process on RF and analog performances o...

引用

bipolar/bicmos circuits and technology meeting

作者： S. Cremer N. Segura P. Joubin M. Marin M. Thomas C. Richard S. Boret D. Benoit S. Bruyere STMicroelectronics Crolles France

ISBN: (纸本)9781424410187;1424410185

RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si 3 N 4 dielectric in the copper back-end of a 0.13 μm bicmos technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.

关键词： Radio frequency MIM capacitors Capacitance Electrodes Space technology bicmos integrated circuits CMOS technology Dielectric materials MIM devices Copper

来源：评论

学校读者我要写书评

暂无评论

Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications

Large Signal Modeling of High Efficiency SiGe HBTs for Power...

引用

bipolar/bicmos circuits and technology meeting

作者： Ramana M. Malladi Michael McPartlin Alvin Joseph Hugues Lafontaine Mark Doherty IBM Microelectronics Essex Junction VT USA SiGe Semiconductor Corporation Methuen MA USA

ISBN: (纸本)9781424410187;1424410185

Large-signal compact modeling of SiGe HBTs integrated into a new IBM bicmos technology geared towards high-efficiency power amplifiers is described. The technology exhibits a record 73% PAE at 5.75 GHz in class AB operation. A scalable HiCUM model (high current model) is developed to accurately model the DC, small-signal and large-signal characteristics. Results of DC, f T characteristics, output power, PAE and AM-PM performance of the device are discussed in detail.

关键词： Silicon germanium Germanium silicon alloys High power amplifiers Capacitance bicmos integrated circuits Semiconductor optical amplifiers Power amplifiers Radio frequency Doping profiles Microelectronics

来源：评论

学校读者我要写书评

暂无评论

PNP SiGe: C HBT Optimization in a Low-Cost Cbicmos Process

PNP SiGe: C HBT Optimization in a Low-Cost CBiCMOS Process

引用

bipolar/bicmos circuits and technology meeting

作者： D. Knoll B. Heinemann Y. Yamamoto H.E. Wulf D. Schmidt IHP Frankfurt Germany

ISBN: (纸本)9781424410187;1424410185

We present results of pnp transistor optimization in a low-cost, complementary SiGe:C bicmos process. A particular goal was to provide well matched parameters of pnp and npn devices. A high pnp transistor current gain of 100 was reached without compromising the LF noise behavior. Two types of pnp transistors are presented showing BV CEO values of 3.3 V and 4.5 V, respectively, a (BV CEO times f T ) product in excess of 260 VGHz, f max values up to 105 GHz, and a minimum noise figure of 1.2 dB at 5 GHz. These pnp data fit well to the data of the medium-voltage npn transistors also available in this Cbicmos process.

关键词： Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Low-frequency noise Medium voltage Noise figure Radio frequency Implants bicmos integrated circuits Circuit noise

来源：评论

学校读者我要写书评

暂无评论

A Monolithic 5-Bit SiGe bicmos Receiver for X-Band Phased-Array Radar Systems

A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Ar...

引用

bipolar/bicmos circuits and technology meeting

作者： Jonathan P. Comeau Matt A. Morton Wei-Min Lance Kuo Tushar Thrivikraman Joel M. Andrews Curtis Grens John D. Cressler John Papapolymerou Mark Mitchell School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA Georgia Tech Research Institute Georgia Institute of Technology Atlanta GA USA

ISBN: (纸本)9781424410187;1424410185

This work presents a 5-bit receiver for X-band phased-array radar applications based on a commercially-available silicon-germanium (SiGe) bicmos technology. The receiver achieves a gain of 11 dB, an operational bandwidth from 8.0 to 10.7 GHz, an average noise figure of 4.1 dB, and an input-referred third-order intercept point (IIP 3 ) of-13 dBm, while only dissipating 33 mW of power. The receiver also provides 32 distinct phase states from 0 to 360deg, with an rms phase error < 9deg. This level of circuit performance and integration capability demonstrates the benefits of SiGe bicmos technology for emerging radar applications, making it an excellent candidate for integrated X-band phased-array radar transmit/receive modules.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Switches Radar applications Heterojunction bipolar transistors Integrated circuit technology Phase shifters CMOS technology USA Councils

来源：评论

学校读者我要写书评

暂无评论

A 0.35 μm SiGe bicmos technology for power amplifier applications

A 0.35 μm SiGe BiCMOS technology for power amplifier applic...

引用

bipolar/bicmos circuits and technology meeting

作者： Alvin Joseph Qizhi Liu Wade Hodge Peter Gray Kenneth Stein Rose Previti-Kelly Peter Lindgren Ephrem Gebreselasie Ben Voegeli Panglijen Candra Doug Hershberger Ramana Malladi Ping-Chuan Wang Kim Watson Zhong-Xiang He Jim Dunn Systems and Technology Group IBM Semiconductor Research and Development Center Essex Junction VT USA Systems and Technology Group IBM Semiconductor Research and Development Center Waltham MA USA Green Mountain Coffee Waterbury VT USA IBM Systems and Technology Group East Fishkill NY USA

ISBN: (纸本)9781424410187;1424410185

In this paper we introduce, a state-of-the-art SiGe bicmos power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (f T - BV ceo ) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.

关键词： Silicon germanium Germanium silicon alloys bicmos integrated circuits Power amplifiers Inductance Packaging CMOS technology Costs Thermal management Gallium arsenide

来源：评论

学校读者我要写书评

暂无评论

Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium bicmos Technologies

Electrically Programmable Fuses for Analog and Mixed Signal ...

引用

bipolar/bicmos circuits and technology meeting

作者： E.G. Gebreselasie S.H. Voldman Z. X. He D. Coolbaugh R.M. Rassel T. Kirihata A. Paganini C.G. Cox S.A. Mongeon S.A. St. Onge J.S. Dunn R.E. Halbach J.M. Lukaitis IBM Microelectronics Essex Junction USA IBM Microelectronics Hopewell Junction USA IBM Microelectronics USA

ISBN: (纸本)9781424410187;1424410185

An electrically programmable fuse, known as "eFUSE," is used to provide passive device trimming and circuitry fine tuning for analog and mixed signal applications in silicon germanium bicmos technologies will be discussed. Timing analysis, pre-and post-programming electrical characterization, and electro-migration failure analysis will be presented.

关键词： Fuses Silicon germanium Germanium silicon alloys bicmos integrated circuits Laser tuning Silicides Microelectronics USA Councils Circuit optimization Failure analysis

来源：评论

学校读者我要写书评

暂无评论

A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe bicmos technology

A 4-GHz band ultra-wideband voltage controlled oscillator IC...

引用

bipolar/bicmos circuits and technology meeting

作者： Satoshi Kurachi Yusuke Murata Shohei Ishikawa Nobuyuki Itoh Koji Yonemura Toshihiko Yoshimasu Production and Systems Waseda University Semiconductor Company Toshiba Corporation

ISBN: (纸本)9781424410187;1424410185

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.3S μm SiGe bicmos technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequency of 4.37 GHz.

关键词： bicmos integrated circuits Ultra wideband technology Voltage-controlled oscillators Silicon germanium Germanium silicon alloys RLC circuits Voltage control Frequency Circuit optimization MOS devices

来源：评论

学校读者我要写书评

暂无评论

A 12-bit 65 MS/s pipeline A/D converter in 0.18 μm SiGe bicmos

A 12-bit 65 MS/s pipeline A/D converter in 0.18 μm SiGe BiC...

引用

bipolar/bicmos circuits and technology meeting

作者： Siddharth Devarajan Ronald J. Gutmann Kenneth Rose Center for Integrated Electronics Rensselaer Polytechnic Institute Troy NY USA

ISBN: (纸本)9781424410187;1424410185

This work discusses the benefits of a SiGe bicmos implementation over a CMOS implementation for pipeline A/Ds. While various circuit blocks in a pipeline A/D can benefit from the higher transconductance (g m ), higher unity gain frequency (f T ) and lower noise of SiGe HBTs, this work focuses on the most critical block in a pipeline A/D, the operational transconductance amplifier (OTA). An OTA employing an all NMOS pre-amplifier followed by a cascoded SiGe HBT stage with actively cascoded PMOS loads is designed. A prototype 12-bit pipeline A/D achieves a measured SNDR of 62.6 dB and a SFDR of 73.4 dB at 65 MS/s with a power dissipation of 325 mW and operates from dual 1.8 V and 3.3 V supplies.

关键词： Pipelines Silicon germanium Germanium silicon alloys bicmos integrated circuits Transconductance Frequency Circuit noise Low-noise amplifiers Operational amplifiers MOS devices

来源：评论

学校读者我要写书评

暂无评论

Varactorless, tuneable LC-VCO for microwave frequencies in a 0.25 μm SiGe bicmos technology

Varactorless, tuneable LC-VCO for microwave frequencies in a...

引用

bipolar/bicmos circuits and technology meeting

作者： H. Veenstra E.v.d. Heijden Philips Research Eindhoven Netherlands NXP Semiconductors Research Eindhoven Netherlands

ISBN: (纸本)9781424410187;1424410185

Many LC-VCOs use a cross-coupled differential pair as active negative resistance. The cross-coupled differential pair realizes un damping for frequencies up to f cross . An active negative resistance can also be realized based on a capacitively loaded emitter follower. Such a topology enables higher oscillation frequencies, and is therefore more suited for microwave frequencies. Moreover, by realizing the capacitive load from the input capacitance of a second, resistively loaded emitter follower, the negative resistance and output signal buffering functions can be combined. The varactor typically dominates the losses of the LC-tank at microwave frequencies. This paper demonstrates an LC-VCO based on a capacitively loaded emitter follower, with frequency tuning realized via the collector-base capacitance of the first emitter followers connected to the inductor. No additional varactor is required. The oscillator, implemented in a 0.25μm SiGe:C bicmos technology, achieves a measured frequency tuning range from 53.2 to 57.6 GHz and a phase noise of -100 dBc/Hzat 1 MHz from the carrier.

关键词： Microwave frequencies Silicon germanium Germanium silicon alloys bicmos integrated circuits Microwave technology Capacitance Varactors Tuning Damping Topology

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共111页 << < 43 44 45 46 47 48 49 50 51 52 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：